Works (18)

Updated: April 11th, 2023 10:13

2015 journal article

Band alignment at AlN/Si (111) and (001) interfaces

JOURNAL OF APPLIED PHYSICS, 118(4).

By: S. King, R. Nemanich & R. Davis

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Cleaning of pyrolytic hexagonal boron nitride surfaces

SURFACE AND INTERFACE ANALYSIS, 47(7), 798–803.

By: S. King, R. Nemanich & R. Davis

author keywords: boron nitride; surface cleaning; XPS; 2D materials; h-BN
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

By: S. King, S. Tanaka, R. Davis & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5).

By: S. King, R. Davis, R. Carter, T. Schneider & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2015 journal article

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 252(2), 391–396.

By: S. King, R. Nemanich & R. Davis

author keywords: scandium; silicon carbide; Schottky barrier; XPS
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(5).

By: S. King, R. Davis & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2014 journal article

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(6).

By: S. King, R. Davis & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2014 journal article

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

APPLIED PHYSICS LETTERS, 105(8).

By: S. King, R. Nemanich & R. Davis

Source: Web Of Science
Added: August 6, 2018

2008 journal article

Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces

SURFACE SCIENCE, 602(2), 405–415.

By: S. King, R. Davis & R. Nemanich

author keywords: silicon carbide; gallium; indium; temperature programmed desorption; kinetics
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Chemical vapor cleaning of 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454.

By: S. King, R. Kern, M. Benjamin, J. Barnak*, R. Nemanich & R. Davis

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(7), 2648–2651.

By: S. King, R. Nemanich & R. Davis

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37.

By: S. King, R. Davis, C. Ronning & R. Nemanich

author keywords: GaN; SiC; valence band; discontinuity; gallium nitride; silicon carbide; x-ray photoelectron spectroscopy; ultra-violet photoelectron spectroscopy
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces

JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490.

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1910–1917.

By: S. King, R. Nemanich & R. Davis

Source: Web Of Science
Added: August 6, 2018

1999 journal article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593.

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Cleaning of AlN and GaN surfaces

JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260.

By: S. King, J. Barnak, M. Bremser, K. Tracy, C. Ronning, R. Davis, R. Nemanich

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090.

Source: Web Of Science
Added: August 6, 2018

1998 journal article

X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces

JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048.

By: S. King, C. Ronning, R. Davis, R. Busby n & R. Nemanich

Source: Web Of Science
Added: August 6, 2018