Sean W. King

Works (18)

Updated: July 5th, 2023 16:03

2015 article

Band alignment at AlN/Si (111) and (001) interfaces

King, S. W., Nemanich, R. J., & Davis, R. F. (2015, July 28). Journal of Applied Physics.

By: S. King n, R. Nemanich n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2015 article

Cleaning of pyrolytic hexagonal boron nitride surfaces

King, S. W., Nemanich, R. J., & Davis, R. F. (2015, May 26). Surface and Interface Analysis.

By: S. King n, R. Nemanich n & R. Davis n

author keywords: boron nitride; surface cleaning; XPS; 2D materials; h-BN
topics (OpenAlex): Graphene research and applications; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2015 article

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

King, S. W., Tanaka, S., Davis, R. F., & Nemanich, R. J. (2015, May 21). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: S. King n, S. Tanaka  n, R. Davis n & R. Nemanich n

topics (OpenAlex): Graphene research and applications; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2015 article

Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces

King, S. W., Davis, R. F., Carter, R. J., Schneider, T. P., & Nemanich, R. J. (2015, July 20). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: S. King n, R. Davis n, R. Carter n, T. Schneider n & R. Nemanich n

topics (OpenAlex): Semiconductor materials and devices; Plasma Diagnostics and Applications; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2014 article

Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces

King, S. W., Davis, R. F., & Nemanich, R. J. (2014, July 31). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: S. King n, R. Davis n & R. Nemanich n

topics (OpenAlex): Plasma Diagnostics and Applications; ZnO doping and properties; Gas Sensing Nanomaterials and Sensors
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
13. Climate Action (Web of Science)
Source: Web Of Science
Added: August 6, 2018

2014 article

Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces

King, S. W., Davis, R. F., & Nemanich, R. J. (2014, September 16). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: S. King n, R. Davis n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2014 article

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

King, S. W., Nemanich, R. J., & Davis, R. F. (2014, October 16). Physica Status Solidi (b).

By: S. King n, R. Nemanich n & R. Davis n

author keywords: scandium; silicon carbide; Schottky barrier; XPS
topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and interfaces; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2014 article

Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)

King, S. W., Nemanich, R. J., & Davis, R. F. (2014, August 25). Applied Physics Letters.

By: S. King n, R. Nemanich n & R. Davis n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 article

Kinetics of Ga and In desorption from (7×7) Si(111) and (3×3) 6H-SiC(0001) surfaces

King, S. W., Davis, R. F., & Nemanich, R. J. (2007, November 9). Surface Science.

By: S. King n, R. Davis n & R. Nemanich n

author keywords: silicon carbide; gallium; indium; temperature programmed desorption; kinetics
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1999 article

Chemical Vapor Cleaning of 6H‐SiC Surfaces

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999, September 1). Journal of The Electrochemical Society.

By: S. King*, R. Kern*, M. Benjamin n, J. Barnak, R. Nemanich n & R. Davis*

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Advanced ceramic materials synthesis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1999 article

Dry Ex Situ Cleaning Processes for  ( 0001 ) Si 6H‐SiC Surfaces

King, S. W., Nemanich, R. J., & Davis, R. F. (1999, July 1). Journal of The Electrochemical Society.

By: S. King n, R. Nemanich n & R. Davis n

topics (OpenAlex): Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies; Copper Interconnects and Reliability
Source: Web Of Science
Added: August 6, 2018

1999 article

Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999, December 1). Journal of Electronic Materials.

By: S. King n, R. Davis n, C. Ronning* & R. Nemanich n

author keywords: GaN; SiC; valence band; discontinuity; gallium nitride; silicon carbide; x-ray photoelectron spectroscopy; ultra-violet photoelectron spectroscopy
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1999 article

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999, October 15). Journal of Applied Physics.

By: S. King n, R. Davis n, C. Ronning*, M. Benjamin n & R. Nemanich n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1999 article

Wet Chemical Processing of (0001)Si 6H‐SiC Hydrophobic and Hydrophilic Surfaces

King, S. W., Nemanich, R. J., & Davisa, R. F. (1999, May 1). Journal of The Electrochemical Society.

By: S. King n, R. Nemanich n & R. Davisa n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Advanced ceramic materials synthesis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1999 article

X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999, November 15). Journal of Applied Physics.

By: S. King n, E. Carlson n, R. Therrien n, J. Christman n, R. Nemanich n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Photocathodes and Microchannel Plates
Source: Web Of Science
Added: August 6, 2018

1998 article

Cleaning of AlN and GaN surfaces

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998, November 1). Journal of Applied Physics.

By: S. King n, J. Barnak n, M. Bremser n, K. Tracy n, C. Ronning n, R. Davis n, R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Plasma Diagnostics and Applications; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1998 article

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998, August 15). Journal of Applied Physics.

By: S. King n, C. Ronning n, R. Davis n, M. Benjamin n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1998 article

X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces

King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998, December 1). Journal of Applied Physics.

By: S. King n, C. Ronning n, R. Davis n, R. Busby n & R. Nemanich n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Electron and X-Ray Spectroscopy Techniques; Semiconductor materials and interfaces
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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