Sean W. King

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Band alignment at AlN/Si (111) and (001) interfaces. JOURNAL OF APPLIED PHYSICS, 118(4). https://doi.org/10.1063/1.4927515

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Cleaning of pyrolytic hexagonal boron nitride surfaces. SURFACE AND INTERFACE ANALYSIS, 47(7), 798–803. https://doi.org/10.1002/sia.5781

King, S. W., Tanaka, S., Davis, R. F., & Nemanich, R. J. (2015). Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5). https://doi.org/10.1116/1.4921526

King, S. W., Davis, R. F., Carter, R. J., Schneider, T. P., & Nemanich, R. J. (2015). Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 33(5). https://doi.org/10.1116/1.4926733

King, S. W., Nemanich, R. J., & Davis, R. F. (2015). Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 252(2), 391–396. https://doi.org/10.1002/pssb.201451340

King, S. W., Davis, R. F., & Nemanich, R. J. (2014). Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(5). https://doi.org/10.1116/1.4891650

King, S. W., Davis, R. F., & Nemanich, R. J. (2014). Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(6). https://doi.org/10.1116/1.4894816

King, S. W., Nemanich, R. J., & Davis, R. F. (2014). Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001). APPLIED PHYSICS LETTERS, 105(8). https://doi.org/10.1063/1.4894010

King, S. W., Davis, R. F., & Nemanich, R. J. (2008). Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces. SURFACE SCIENCE, 602(2), 405–415. https://doi.org/10.1016/j.susc.2007.10.034

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Dry ex situ cleaning processes for (0001)(Si) 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(7), 2648–2651. https://doi.org/10.1149/1.1391986

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999). Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface. JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37. https://doi.org/10.1007/s11664-999-0145-4

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999). Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces. JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490. https://doi.org/10.1063/1.371391

King, S. W., Nemanich, R. J., & Davis, R. F. (1999). Wet chemical processing of (0001)(Si) 6H-SiC hydrophobic and hydrophilic surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1910–1917. https://doi.org/10.1149/1.1391864

King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. (1999). X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms. JOURNAL OF APPLIED PHYSICS, 86(10), 5584–5593. https://doi.org/10.1063/1.371564

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998). Cleaning of AlN and GaN surfaces. JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260. https://doi.org/10.1063/1.368814

King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998). Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090. https://doi.org/10.1063/1.368355

King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998). X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces. JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048. https://doi.org/10.1063/1.368879