2000 journal article
Effect of Ar+ ion beam in the process of plasma surface modification of PET films
JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683.
1998 journal article
Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714.
Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal
Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495.
Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy
Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173.
Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O
Koh, K., Niimi, H., & Lucovsky, G. (1998, January). SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528.
Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C
Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206.
Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing
Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210.
1997 journal article
Plasma-assisted formation of low defect density SiC-SiO2 interfaces
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.
Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation
Niimi, H., Koh, K., & Lucovsky, G. (1997, May). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368.