Kwangil Koh

Hyun, J., Barletta, P., Koh, K., Yoo, S., Oh, J., Aspnes, D. E., & Cuomo, J. J. (2000). Effect of Ar+ ion beam in the process of plasma surface modification of PET films. JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683. https://doi.org/10.1002/1097-4628(20000822)77:8<1679::AID-APP4>3.0.CO;2-F

Koh, K., Niimi, H., Lucovsky, G., & Green, M. L. (1998). Controlled nitrogen incorporation at Si-SiO2 interfaces by remote plasma-assisted processing. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37(2), 709–714. https://doi.org/10.1143/JJAP.37.709

Lucovsky, G., Koh, K., Chaflin, B., & Hinds, B. (1998, January). Interfacial sub-oxide regions at Si-SiO2 interfaces: minimization by post-oxidation rapid thermal anneal. APPLIED SURFACE SCIENCE, Vol. 123, pp. 490–495. https://doi.org/10.1016/S0169-4332(97)00528-X

Lucovsky, G., Niimi, H., Koh, K., & Green, M. L. (1998, February). Monolayer nitrogen atom incorporation at buried Si-SiO2 interfaces: Preparation by remote plasma oxidation/nitridation and characterization by on-line auger electron spectroscopy. SURFACE REVIEW AND LETTERS, Vol. 5, pp. 167–173. https://doi.org/10.1142/S0218625X98000323

Koh, K., Niimi, H., & Lucovsky, G. (1998, January). Plasma-engineered Si-SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O. SURFACE & COATINGS TECHNOLOGY, Vol. 98, pp. 1524–1528. https://doi.org/10.1016/S0257-8972(97)00392-7

Cohen, J. A., & Koh, K. (1997). Compact rings having a finite simple group of units. JOURNAL OF PURE AND APPLIED ALGEBRA, 119(1), 13–26. https://doi.org/10.1016/S0022-4049(96)00128-4

Lucovsky, G., Banerjee, A., Niimi, H., Koh, K., Hinds, B., Meyer, C., … Kurz, H. (1997, June). Elimination of sub-oxide transition regions at Si-SiO2 interfaces by rapid thermal annealing at 900 degrees C. APPLIED SURFACE SCIENCE, Vol. 117, pp. 202–206. https://doi.org/10.1016/S0169-4332(97)80079-7

Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. (1997, June). Minimization of sub-oxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing. MICROELECTRONIC ENGINEERING, Vol. 36, pp. 207–210. https://doi.org/10.1016/s0167-9317(97)00049-x

Golz, A., Lucovsky, G., Koh, K., Wolfe, D., Niimi, H., & Kurz, H. (1997). Plasma-assisted formation of low defect density SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

Niimi, H., Koh, K., & Lucovsky, G. (1997, May). Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 364–368. https://doi.org/10.1016/S0168-583X(96)00958-5