2024 article
FET Junction Temperature Monitoring Using Novel On-Chip Solution
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2475–2482.
2023 conference paper
Analysis and Characterization of Four-quadrant Switches based Commutation Cell
2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.
Contributors: R. Narwal n , S. Rawat n, A. Kanale n, T. Cheng n, n, S. Bhattacharya n , B. Baliga n, D. Hopkins n
Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
2023 journal article
Power Conversion Systems Enabled by SiC BiDFET Device
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.
Contributors: S. Bhattacharya n , R. Narwal n , S. Shah*, B. Baliga n, *, A. Kanale n, K. Han*, D. Hopkins n , T. Cheng n
2023 journal article
The BiDFET Device and Its Impact on Converters
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.
Contributors: B. Baliga n, D. Hopkins n , S. Bhattacharya n , *, T. Cheng n, R. Narwal n , A. Kanale n, S. Shah, K. Han*
2022 article proceedings
Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems
Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Contributors: A. Kanale n, T. Cheng n, R. Narwal n , n, B. Baliga n, S. Bhattacharya n , D. Hopkins n
Event: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
2022 journal article
Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255.
2022 journal article
Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications
IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.
2022 journal article
Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts
IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241.
2021 journal article
2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.
2021 article
3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry
SOUTHEASTCON 2021, pp. 555–558.
2021 journal article
650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.
2021 conference paper
Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.
Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021
2021 article
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.
Contributors: S. Shah n, R. Narwal n , S. Bhattacharya n , A. Kanale n, T. Cheng n, U. Mehrotra n, n, B. Baliga n, D. Hopkins n
2021 journal article
Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.
2021 conference paper
Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.
Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
2020 journal article
2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.
2020 article
2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
2020 journal article
Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.
2020 journal article
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.
2020 journal article
Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.
2019 journal article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V
IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.
2019 article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)
Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.
2019 journal article
Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.
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