Aditi Agarwal

FET Junction Temperature Monitoring Using Novel On-Chip Solution

Narwal, R., Agarwal, A., Cheng, T.-H., Baliga, B. J., Bhattacharya, S., & Hopkins, D. C. (2024, February 25). 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2475–2482.

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.

Power Conversion Systems Enabled by SiC BiDFET Device

Bhattacharya, S., Narwal, R., Shah, S. S., Baliga, B. J., Agarwal, A., Kanale, A., … Cheng, T.-H. (2023, March 1). IEEE Power Electronics Magazine, Vol. 10, pp. 39–43.

The BiDFET Device and Its Impact on Converters

Baliga, B. J., Hopkins, D., Bhattacharya, S., Agarwal, A., Cheng, T.-H., Narwal, R., … Han, K. (2023, March 1). IEEE Power Electronics Magazine, Vol. 10, pp. 20–27.

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

Agarwal, A., & Baliga, B. J. (2022, January 1). IEEE Journal of the Electron Devices Society.

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

Kanale, A., Agarwal, A., Baliga, B. J., & Bhattacharya, S. (2022, April 12). IEEE Transactions on Power Electronics, Vol. 9.

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

Agarwal, A., & Baliga, B. J. (2022, February 18). IEEE Transactions on Electron Devices.

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

Agarwal, A., & Baliga, B. J. (2021, January 1). IEEE Journal of the Electron Devices Society.

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE™ Technology in a 4-inch Wafer Commercial Foundry

Agarwal, A., Baliga, B. J., Francois, M. M. A., Maxwell, E., Berliner, N., & Papageorge, M. (2021, March 10).

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

Agarwal, A., Han, K., & Baliga, B. J. (2021, April 1). IEEE Transactions on Electron Devices.

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). Presented at the 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA.

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

Shah, S. S., Narwal, R., Bhattacharya, S., Kanale, A., Cheng, T.-H., Mehrotra, U., … Hopkins, D. C. (2021, October 10). 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

Agarwal, A., & Baliga, B. J. (2021, August 16). IEEE Transactions on Electron Devices.

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Presented at the 2021 IEEE Applied Power Electronics Conference and Exposition (APEC).

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

Agarwal, A., Han, K., & Baliga, B. J. (2020, January 1). IEEE Journal of the Electron Devices Society.

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

Agarwal, A., Han, K., & Baliga, B. J. (2020, September 23).

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

Agarwal, A., Kanale, A., & Baliga, B. J. (2020, August 18). IEEE Transactions on Power Electronics.

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

Agarwal, A., Han, K., & Baliga, B. J. (2020, November 25). IEEE Journal of the Electron Devices Society.

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

Agarwal, A., Han, K., & Baliga, B. J. (2020, July 14). IEEE Transactions on Electron Devices.

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

Agarwal, A., Han, K., & Baliga, B. J. (2019, September 18). IEEE Electron Device Letters.

Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V” [Nov 19 1792-1795]

Agarwal, A., Han, K., & Baliga, B. J. (2019, December 4). IEEE Electron Device Letters.

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

Agarwal, A., Han, K., & Baliga, B. J. (2019, March 29). IEEE Electron Device Letters.