Aditi Agarwal

College of Engineering

Works (22)

Updated: November 27th, 2023 08:05

2023 conference paper

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.

By: R. Narwal n, S. Rawat n, A. Kanale n, T. Cheng n, A. Agarwal n, S. Bhattacharya n, B. Baliga n, D. Hopkins n

Contributors: R. Narwal n, S. Rawat n, A. Kanale n, T. Cheng n, A. Agarwal n, S. Bhattacharya n, B. Baliga n, D. Hopkins n

Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Commutation cell; four quadrant switch; SiC Bidirectional FET; BiDFET; characterization; switching loss; dead time; overlap time; commutation scheme; matrix converter
UN Sustainable Development Goal Categories
Sources: Web Of Science, Crossref, NC State University Libraries, ORCID
Added: July 3, 2023

2023 journal article

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

By: S. Bhattacharya n, R. Narwal n, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n, T. Cheng n

Contributors: S. Bhattacharya n, R. Narwal n, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n, T. Cheng n

author keywords: Motor drives; Silicon carbide; Power supplies; PIN photodiodes; Switches; Packaging; Transformers
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 7, 2023

2023 journal article

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

By: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

Contributors: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

author keywords: Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 7, 2023

2022 article proceedings

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

By: A. Kanale n, T. Cheng n, R. Narwal n, A. Agarwal n, B. Baliga n, S. Bhattacharya n, D. Hopkins n

Contributors: A. Kanale n, T. Cheng n, R. Narwal n, A. Agarwal n, B. Baliga n, S. Bhattacharya n, D. Hopkins n

Event: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

author keywords: Bidirectional; Silicon Carbide; Half-Bridge Module; H-Bridge; BiDFET
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries, ORCID
Added: June 15, 2023

2022 journal article

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255.

By: A. Agarwal n & B. Baliga n

author keywords: 4H-SiC; accumulation; capacitance; cell optimization; gate charge; inversion; ion-implant straggle; on-resistance; silicon carbide; short-channel effect; transconductance
Source: Web Of Science
Added: March 28, 2022

2022 journal article

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.

By: A. Kanale n, A. Agarwal n, B. Baliga n & S. Bhattacharya n

author keywords: MOSFET; Silicon carbide; Schottky diodes; Capacitance; Voltage measurement; Logic gates; Capacitance measurement; 4H-SiC; CSI; current switch; monolithic; reverse-blocking
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID, NC State University Libraries
Added: May 25, 2022

2022 journal article

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241.

By: A. Agarwal n & B. Baliga n

author keywords: 4H-SiC; accumulation mode; C-GD; figures of merit (FOMs); inversion mode; Junction Barrier Schottky Field-Effect Transistor (JBSFET); Q(GD); R-ON,R-SP; temperature dependence
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: March 28, 2022

2021 journal article

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

By: A. Agarwal n & B. Baliga n

author keywords: 4H-SiC; accumulation-channel; analytical models; JBSFET; cell topology; linear; hexagonal; octagonal; figure-of-merit; numerical simulations; silicon carbide
Source: Web Of Science
Added: April 12, 2021

2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021, pp. 555–558.

By: A. Agarwal n, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

author keywords: 4H-SiC; Wide Band Gap Semiconductor Device Fabrication; Foundry; Power MOSFET; ACCUFET; INVFET
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 13, 2021

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-silicon carbide (SiC); cell design; hexagonal; inversion; junction barrier Schottky field effect transistor (JBSFET); linear; MOSFET; octagonal
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: May 24, 2021

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal n, A. Kanale n & B. Baliga n

author keywords: 650 V; 4H-SiC; 10Vgate drive; gate-drain charge; gate oxide; high-frequency figures-of-merit; power MOSFETs; reverse-transfer capacitance; short-circuit withstand time; Si CoolMOS; specific ON-resistance; switching loss
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: December 14, 2020

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; inversion; JBSFET; cell topology; linear; hexagonal; octagonal; gate oxide thickness
Source: Web Of Science
Added: March 22, 2021

2021 conference paper

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.

Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021

author keywords: Silicon Carbide; Bidirectional Switch; Switching Performance; Common-Source; Common-Drain
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries, Crossref
Added: May 10, 2022

2021 article

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

By: S. Shah n, R. Narwal n, S. Bhattacharya n, A. Kanale n, T. Cheng n, U. Mehrotra n, A. Agarwal n, B. Baliga n, D. Hopkins n

Contributors: S. Shah n, R. Narwal n, S. Bhattacharya n, A. Kanale n, T. Cheng n, U. Mehrotra n, A. Agarwal n, B. Baliga n, D. Hopkins n

author keywords: Bidirectional isolated AC-DC conversion; solar energy; PV grid integration; dual active bridge; AC/DC DAB; SiC bidirectional FET; BiDFET; four quadrant power switch
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 5, 2022

2021 journal article

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.

By: A. Agarwal n & B. Baliga n

author keywords: 2.3 kV devices; 4H-SiC; C-gd; planar-gate MOSFET; Q(gd); R-ON; silicon carbide; thin gate oxide
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: October 4, 2021

2021 conference paper

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.

By: A. Kanale n, T. Cheng n, S. Shah n, K. Han n, A. Agarwal n, B. Baliga n, D. Hopkins n, S. Bhattacharya n

Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Silicon Carbide; Monolithic; Bidirectional; Four-Quadrant; Integrated; JBS Diode
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: September 4, 2021

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; 2.3 kV devices; accumulation channel; C-gd; planar-gate MOSFET; Q(gd); R-on,R-sp; silicon carbide; split-gate
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: June 22, 2020

2020 article

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Junction Barrier Schottky (JBS) rectifier; 4H-SiC; Schottky barrier; Ni Schottky contact; Ti Schottky contact; leakage current knee voltage; on-resistance
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 23, 2021

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal n, K. Han n & B. Jayant Baliga n

author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Foundries; Insulated gate bipolar transistors; Object recognition
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: February 3, 2020

2020 journal article

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; accumulation; cell topology; hexagonal; linear; MOSFET; octagonal; silicon carbide (SiC); square
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 14, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Logic gates; MOSFET; Voltage measurement; Capacitance; Silicon carbide; Electric fields; Silicon; 4H-SiC; 600 V; Cgd; gate oxide; inversion channel; planar-gate MOSFET; Qgd; Ron; sp; silicon carbide
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: December 2, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; 600 V; cell topologies; C-gd; hexagonal layout; linear layout; octagonal layout; planar MOSFET; Q(gd); R-on,R-sp; silicon carbide; square layout
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: June 4, 2019

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