Aditi Agarwal

College of Engineering

Works (13)

2021 journal article

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: April 12, 2021

2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021.

By: A. Agarwal, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

Source: Web Of Science
Added: September 13, 2021

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: May 24, 2021

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal, A. Kanale & B. Baliga

Source: Web Of Science
Added: December 14, 2020

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: March 22, 2021

2021 journal article

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: October 4, 2021

2021 article

Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

By: A. Kanale, T. Cheng, S. Shah, K. Han, A. Agarwal, B. Baliga, D. Hopkins, S. Bhattacharya

Source: Web Of Science
Added: September 20, 2021

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 22, 2020

2020 article

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: August 23, 2021

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal, K. Han & B. Jayant Baliga

Source: Web Of Science
Added: February 3, 2020

2020 journal article

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: September 14, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: December 2, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 4, 2019