Aditi Agarwal

College of Engineering

Works (16)

2022 journal article

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: March 28, 2022

2022 journal article

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

IEEE TRANSACTIONS ON ELECTRON DEVICES.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: March 28, 2022

2021 journal article

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: April 12, 2021

2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021.

By: A. Agarwal, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

Source: Web Of Science
Added: September 13, 2021

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: May 24, 2021

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal, A. Kanale & B. Baliga

Source: Web Of Science
Added: December 14, 2020

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: March 22, 2021

2021 article

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA).

Source: Web Of Science
Added: May 10, 2022

2021 journal article

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES.

By: A. Agarwal & B. Baliga

Source: Web Of Science
Added: October 4, 2021

2021 article

Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

By: A. Kanale, T. Cheng, S. Shah, K. Han, A. Agarwal, B. Baliga, D. Hopkins, S. Bhattacharya

Source: Web Of Science
Added: September 20, 2021

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 22, 2020

2020 article

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: August 23, 2021

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal, K. Han & B. Jayant Baliga

Source: Web Of Science
Added: February 3, 2020

2020 journal article

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: September 14, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: December 2, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 4, 2019