Aditi Agarwal

College of Engineering

Works (4)

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 22, 2020

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal, K. Han & B. Jayant Baliga

Source: Web Of Science
Added: February 3, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: December 2, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 4, 2019