Aditi Agarwal

Narwal, R., Rawat, S., Kanale, A., Cheng, T.-H., Agarwal, A., Bhattacharya, S., … Hopkins, D. C. (2023). Analysis and Characterization of Four-quadrant Switches based Commutation Cell. 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216. https://doi.org/10.1109/APEC43580.2023.10131312

Bhattacharya, S., Narwal, R., Shah, S. S., Baliga, B. J., Agarwal, A., Kanale, A., … Cheng, T.-H. (2023). Power Conversion Systems Enabled by SiC BiDFET Device. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43. https://doi.org/10.1109/MPEL.2023.3237060

Baliga, B. J., Hopkins, D., Bhattacharya, S., Agarwal, A., Cheng, T.-H., Narwal, R., … Han, K. (2023). The BiDFET Device and Its Impact on Converters. IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27. https://doi.org/10.1109/MPEL.2023.3237059

Kanale, A., Cheng, T.-H., Narwal, R., Agarwal, A., Baliga, B. J., Bhattacharya, S., & Hopkins, D. C. (2022). Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems. Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE). https://doi.org/10.1109/ECCE50734.2022.9947715

Agarwal, A., & Baliga, B. J. (2022). Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255. https://doi.org/10.1109/JEDS.2022.3152489

Kanale, A., Agarwal, A., Baliga, B. J., & Bhattacharya, S. (2022). Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications. IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116. https://doi.org/10.1109/TPEL.2022.3166933

Agarwal, A., & Baliga, B. J. (2022). Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts. IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241. https://doi.org/10.1109/TED.2022.3148058

Agarwal, A., & Baliga, B. J. (2021). 2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333. https://doi.org/10.1109/JEDS.2021.3058662

Agarwal, A., Baliga, J., Francois, M. M. A., Maxwell, E., Berliner, N., & Papageorge, M. (2021). 3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry. SOUTHEASTCON 2021, pp. 555–558. https://doi.org/10.1109/SOUTHEASTCON45413.2021.9401931

Agarwal, A., Han, K., & Baliga, B. J. (2021). 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400. https://doi.org/10.1109/TED.2021.3067921

Agarwal, A., Kanale, A., & Baliga, B. J. (2021). Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices. IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345. https://doi.org/10.1109/TPEL.2020.3017215

Agarwal, A., Han, K., & Baliga, B. J. (2021). Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88. https://doi.org/10.1109/JEDS.2020.3040353

Kanale, A., Narasimhan, S., Cheng, T.-H., Agarwal, A., Shah, S. S., Baliga, B. J., … Hopkins, D. C. (2021). Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117. https://doi.org/10.1109/WiPDA49284.2021.9645130

Shah, S. S., Narwal, R., Bhattacharya, S., Kanale, A., Cheng, T.-H., Mehrotra, U., … Hopkins, D. C. (2021). Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications. 2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575. https://doi.org/10.1109/ECCE47101.2021.9595533

Agarwal, A., & Baliga, B. J. (2021). Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness. IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033. https://doi.org/10.1109/TED.2021.3102473

Kanale, A., Cheng, T.-H., Shah, S. S., Han, K., Agarwal, A., Baliga, B. J., … Bhattacharya, S. (2021). Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274. https://doi.org/10.1109/APEC42165.2021.9487410

Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504. https://doi.org/10.1109/JEDS.2020.2991355

Agarwal, A., Han, K., & Baliga, B. J. (2020). 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle. 2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA). https://doi.org/10.1109/WiPDAAsia49671.2020.9360272

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195. https://doi.org/10.1109/LED.2019.2956966

Agarwal, A., Han, K., & Baliga, B. J. (2020). Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678. https://doi.org/10.1109/TED.2020.3005632

Agarwal, A., Han, K., & Baliga, B. J. (2019). 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V. IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795. https://doi.org/10.1109/LED.2019.2942259

Agarwal, A., Han, K., & Baliga, B. J. (2019). Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs. IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776. https://doi.org/10.1109/LED.2019.2908078