@article{kolli_rawat_das_kokkonda_vignesh_khan_bhatta_bhattacharya_ricketts_pavlidis_et al._2025, title={RF Integrated Gate Driver for Ultra-fast Switching of 10 kV SiC MOSFETs}, DOI={10.1109/ecce58356.2025.11259634}, abstractNote={Silicon carbide (SiC) devices enable higher voltage operation, reducing current and drive requirements, thereby lowering system costs. However, their rapid $dv/dt$ and $di/dt$ transitions generate electromagnetic interference (EMI) through coupling capacitance at power/signal interfaces, wire loops, and PCB traces. Extensive interconnections for EMI/RFI shielding, such as separate grounds, exacerbate EMI in noisy environments. Conventional galvanically isolated power supplies produce coupling current spikes during high $dv/dt$ switching, triggering gate driver protection and accelerating failure at higher switching frequencies. This study proposes an RF-based approach to suppress coupling capacitance, enabling elevated switching frequencies while ensuring reliability. An RF-based isolated power supply, designed and built for a 10 kV SiC MOSFET, achieves an ultra-low coupling capacitance of 1.85 pF and supports higher $dv/dt$ transitions compared to traditional power supplies. Experimental results from Double Pulse Tests and Buck-Boost converter operation on the 10 kV SiC MOSFET validate the design, demonstrating enhanced performance under faster switching conditions.}, author={Kolli, Nithin and Rawat, Shubham and Das, Partha Pratim and Kokkonda, Raj Kumar and Vignesh, Kumar R C and Khan, Shahid Ali and Bhatta, Ayush and Bhattacharya, Subhashish and Ricketts, David and Pavlidis, Spyridon and et al.}, year={2025}, month={Oct} }