Arunesh Goswami

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

JOURNAL OF APPLIED PHYSICS, 116(16).

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

SOLID-STATE ELECTRONICS, 80, 23–27.

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).