2014 journal article
Modeling of the Gate Leakage Current in AlGaN/GaN HFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.
2014 journal article
Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors
JOURNAL OF APPLIED PHYSICS, 116(16).
2012 conference paper
Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design
2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).
2012 journal article
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
SOLID-STATE ELECTRONICS, 80, 23–27.
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