Works (4)

Updated: July 5th, 2023 15:44

2014 journal article

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.

By: A. Goswami n, R. Trew n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: AlGaN/GaN heterojunction field effect transistors (HFETs); gate leakage; HEMTs; semiconductor device reliability
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

JOURNAL OF APPLIED PHYSICS, 116(16).

By: A. Goswami n, R. Trew n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

SOLID-STATE ELECTRONICS, 80, 23–27.

By: A. Goswami*, R. Trew* & G. Bilbro*

author keywords: AlGaN/GaN HFET reliability; Gate leakage; HEMTs; Semiconductor device modeling
Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew n, D. Hou n, R. Schimizzi n, A. Goswami n & G. Bilbro n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: NC State University Libraries
Added: August 6, 2018