2014 journal article
Modeling of the gate leakage current in AlGaN/GaN HFETs
IEEE Transactions on Electron Devices, 61(4), 1014–1021.
By: A. Goswami, R. Trew & G. Bilbro
Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors
Journal of Applied Physics, 116(16).
2013 journal article
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
Solid-State Electronics, 80, 23–27.
2012 conference paper
Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design
2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).
By: R. Trew, D. Hou, R. Schimizzi, A. Goswami & G. Bilbro