Works (4)
2014 article
Modeling of the Gate Leakage Current in AlGaN/GaN HFETs
Goswami, A., Trew, R. J., & Bilbro, G. L. (2014, February 7). IEEE Transactions on Electron Devices.
2014 article
Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors
Goswami, A., Trew, R. J., & Bilbro, G. L. (2014, October 28). Journal of Applied Physics.
2012 article
Large-signal FET models and a new AlGaN/GaN HFET model for power amplifier design
Trew, R. J., Hou, D., Schimizzi, R., Goswami, A., & Bilbro, G. L. (2012, November 1).
2012 article
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
Goswami, A., Trew, R. J., & Bilbro, G. L. (2012, November 28). Solid-State Electronics.