Works (4)
Updated: July 5th, 2023 15:44
2014 journal article
Modeling of the Gate Leakage Current in AlGaN/GaN HFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.
author keywords: AlGaN/GaN heterojunction field effect transistors (HFETs); gate leakage; HEMTs; semiconductor device reliability
Source: Web Of Science
Added: August 6, 2018
2014 journal article
Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors
JOURNAL OF APPLIED PHYSICS, 116(16).
Source: Web Of Science
Added: August 6, 2018
2012 conference paper
Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design
2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).
Source: NC State University Libraries
Added: August 6, 2018
2012 journal article
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
SOLID-STATE ELECTRONICS, 80, 23–27.
author keywords: AlGaN/GaN HFET reliability; Gate leakage; HEMTs; Semiconductor device modeling
Source: Web Of Science
Added: August 6, 2018