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Arunesh Goswami

Works (4)

Updated: July 5th, 2023 15:44

2014 journal article

Modeling of the Gate Leakage Current in AlGaN/GaN HFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(4), 1014–1021.

By: A. Goswamiⁿ, R. Trewⁿ & G. Bilbroⁿ

author keywords: AlGaN/GaN heterojunction field effect transistors (HFETs); gate leakage; HEMTs; semiconductor device reliability

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies

10.1109/ted.2014.2302797

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Source: Web Of Science

Added: August 6, 2018

2014 journal article

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

JOURNAL OF APPLIED PHYSICS, 116(16).

By: A. Goswamiⁿ, R. Trewⁿ & G. Bilbroⁿ

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Ga2O3 and related materials

10.1063/1.4900581

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Source: Web Of Science

Added: August 6, 2018

2013 journal article

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

SOLID-STATE ELECTRONICS, 80, 23–27.

By: A. Goswamiⁿ, R. Trewⁿ & G. Bilbroⁿ

author keywords: AlGaN/GaN HFET reliability; Gate leakage; HEMTs; Semiconductor device modeling

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices

10.1016/j.sse.2012.10.005

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Source: Web Of Science

Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trewⁿ, D. Houⁿ, R. Schimizziⁿ, A. Goswamiⁿ & G. Bilbroⁿ

topics (OpenAlex): GaN-based semiconductor devices and materials; Radio Frequency Integrated Circuit Design; Silicon Carbide Semiconductor Technologies

10.1109/icwits.2012.6417696

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Source: NC State University Libraries

Added: August 6, 2018

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