2014 journal article

Modeling of the gate leakage current in AlGaN/GaN HFETs

IEEE Transactions on Electron Devices, 61(4), 1014–1021.

By: A. Goswami, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

Journal of Applied Physics, 116(16).

By: A. Goswami, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Solid-State Electronics, 80, 23–27.

By: A. Goswami, R. Trew & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew, D. Hou, R. Schimizzi, A. Goswami & G. Bilbro

Source: NC State University Libraries
Added: August 6, 2018