Aadhithya Mukund Hosalli

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

OPTICS LETTERS, 39(6), 1501–1504.

Strain-balanced InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS, 105(3).

Gallium nitride nanowires by maskless hot phosphoric wet etching

APPLIED PHYSICS LETTERS, 103(8).

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

APPLIED PHYSICS LETTERS, 103(18).