Angus I. Kingon

Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

JOURNAL OF APPLIED PHYSICS, 113(20).

Scaling Issues in Ferroelectric Barium Strontium Titanate Tunable Planar Capacitors

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 59(2), 198–204.

Tunable ferroelectric microwave bandpass filters optimised for system-level integration

IET MICROWAVES ANTENNAS & PROPAGATION, 5(10), 1234–1241.

The Valley of Death as Context for Role Theory in Product Innovation

JOURNAL OF PRODUCT INNOVATION MANAGEMENT, 27(3), 402–417.

Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 18(2), 287–295.

The Impact of Metallization Thickness and Geometry for X-Band Tunable Microwave Filters

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 56(5), 906–911.

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

APPLIED PHYSICS LETTERS, 92(9).

High Q (Ba, Sr) TiO3 interdigitated capacitors fabricated on low cost polycrystalline alumina substrates with copper metallization

Ceramic Engineering and Science Proceedings, 26(5), 125–132.

High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

Applied Physics Letters, 92(11), 112912.

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

Journal of Applied Physics, 104(2).

A new test facility for efficient evaluation of MEMS contact materials

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 17(9), 1788–1795.

Analysis of interface states in LaSixOy metal-insulator-semiconductor structures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A), 6480–6488.

Effects of adhesion layers on the ferroelectric properties of lead zirconium titanate thin films deposited on silicon nitride coated silicon substrates

THIN SOLID FILMS, 516(18), 6052–6057.

Effects of annealing on the electrical properties of highly resistive float zone p-type silicon

Vankova, V., & Kingon, A. I. (2007, December 15). PHYSICA B-CONDENSED MATTER, Vol. 401, pp. 155–158.

High temperature stability of lanthanum silicate dielectric on Si (001)

APPLIED PHYSICS LETTERS, 90(10).

Investigating thin film stresses in stacked silicon dioxide/silicon nitride structures and quantifying their effects on frequency response

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 17(5), 1042–1051.

Lead zirconate titanate thin film capacitors on electroless nickel coated copper foils for embedded passive applications

THIN SOLID FILMS, 515(18), 7331–7336.

Low dielectric loss BaNd2Ti5O14 thick films prepared by an electrophoretic deposition technique

Applied Physics Letters, 90(5).

Multiscale analysis of liquid lubrication trends from industrial machines to micro-electrical-mechanical systems

LANGMUIR, 23(18), 9253–9257.

Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device

Washington, DC: U.S. Patent and Trademark Office.

Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip

Washington, DC: U.S. Patent and Trademark Office.

Thickness dependence of submicron thick Pb(Zr0.3Ti0.7)O-3 films on piezoelectric properties

CERAMICS INTERNATIONAL, 34(8), 1909–1915.

Discrete Barium Strontium Titanate (BST) thin-film interdigital varactors on alumina: Design, fabrication, characterization, and applications

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, pp. 552–555.

Dynamics of ferroelectric domain growth in the field of atomic force microscope

Journal of Applied Physics, 99(10).

Electrical properties of lead zirconate titanate thin films with a ZrO2 buffer layer on an electroless Ni-coated Cu foil

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 89(11), 3426–3430.

Electrophoretic deposition of lead zirconate titanate films on metal foils for embedded components

Journal of the American Ceramic Society, 89(2), 575–581.

Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil

Applied Physics Letters, 88(26).

Ferroelectric thin films: Review of materials, properties, and applications

[Review of ]. Journal of Applied Physics, 100(5), 051606.

Ferroelectric thin films: Review of materials, properties, and applications (vol 100, art no 051606, 2006)

Journal of Applied Physics, Vol. 100.

Flexible thin film temperature and strain sensor array utilizing a novel sensing concept

SENSORS AND ACTUATORS A-PHYSICAL, 135(2), 593–597.

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

Microstructural studies of PZT thick films on Cu foils

ACTA MATERIALIA, 54(12), 3211–3220.

Noise characteristics of an oscillator with a barium strontium titanate (BST) varactor

IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION, 153(1), 96–102.

Perovskites: Is the ultimate memory in sight?

Kingon, A. (2006, April). NATURE MATERIALS, Vol. 5, pp. 251–252.

Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

Washington, DC: U.S. Patent and Trademark Office.

Social networks key to harnessing nanoscience knowledge explosion

Research Technology Management, 49(3), 2–4.

Structures including perovskite dielectric layers and variable oxygen concentration gradient layers

Washington, DC: U.S. Patent and Trademark Office.

Thin film dielectrics for capacitors and methods of making thereof

Washington, DC: U.S. Patent and Trademark Office.

Voltage controlled GaN on Si HFET power oscillator using thin?film ferroelectric varactor tuning

Proceedings of the 36th European Microwave Conference, (EuMW2006), Manchester, UK, 87–90.

Work function engineering using lanthanum oxide interfacial layers

APPLIED PHYSICS LETTERS, 89(23).

A tunable combline bandpass filter using Barium Strontium Titanate interdigital varactors on an alumina substrate

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4, pp. 595–598.

A voltage controlled oscillator using Barium strontium titanate (BST) thin film varactor

RAWCON: 2004 IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS, pp. 91–94.

An electronically tunable microstrip bandpass filter using thin-film barium-strontium-titanate (BST) varactors

Nath, J., Ghosh, D., Maria, J. P., Kingon, A. I., Fathelbab, W., Franzon, P. D., & Steer, M. B. (2005, September). IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol. 53, pp. 2707–2712.

Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors

REVIEW OF SCIENTIFIC INSTRUMENTS, 76(2).

Copper compatible barium titanate thin films for embedded passives

JOURNAL OF ELECTROCERAMICS, 14(2), 95–102.

Direct studies of domain switching dynamics in thin film ferroelectric capacitors

APPLIED PHYSICS LETTERS, 87(8).

Investigation of the electrical and optical properties of iridium oxide by reflectance FTIR spectroscopy and density functional theory calculations

Chemical Physics, 313(38355), 25–31.

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

JOURNAL OF APPLIED PHYSICS, 98(2).

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications

NATURE MATERIALS, 4(3), 233–237.

Low loss tungsten-based electrode technology for microwave frequency BST varactors

JOURNAL OF ELECTROCERAMICS, 14(1), 75–81.

Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer

Washington, DC: U.S. Patent and Trademark Office.

Multi-layer conductor-dielectric oxide structure

Washington, DC: U.S. Patent and Trademark Office.

Nanoscience and technology: Firms take first steps

Research Technology Management, 48(3), 07-.

Strategies and tactics for external corporate venturing

RESEARCH-TECHNOLOGY MANAGEMENT, 48(2), 49–59.

Tunable high-quality-factor interdigitated (Ba, Sr)TiO3 capacitors fabricated on low-cost substrates with copper metallization

THIN SOLID FILMS, 496(2), 669–673.

Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil

JOURNAL OF MATERIALS RESEARCH, 19(10), 2841–2848.

Corporate responses nanoscience and nanotechnology

Research Technology Management, 47(3), 08-.

Domain growth kinetics in lithium niobate single crystals studied by piezoresponse force microscopy

APPLIED PHYSICS LETTERS, 86(1).

Investigation of the mechanism of polarization switching in ferroelectric capacitors by three- dimensional piezoresponse force microscopy

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 80(1), 99–103.

Lanthanum oxide-based dielectrics for integrated circuit capacitors

Washington, DC: U.S. Patent and Trademark Office.

Microwave properties of BST thin film interdigital capacitors on low cost alumina substrates

Proceedings of the 34th European Microwave Conference (EuMc), Amsterdam, 1497–1500. London: Horizon House.

The design and characterization of a novel piezoelectric transducer-based linear motor

IEEE-ASME TRANSACTIONS ON MECHATRONICS, 9(2), 392–398.

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

JOURNAL OF APPLIED PHYSICS, 95(4), 1958–1962.

Evaluation of intrinsic and extrinsic contributions to the piezoelectric properties of Pb(Zr1-xTX)O-3 thin films as a function of composition

JOURNAL OF APPLIED PHYSICS, 93(9), 5568–5575.

Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors

Washington, DC: U.S. Patent and Trademark Office.

Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

APPLIED PHYSICS LETTERS, 83(4), 728–730.

Multi-layer conductor-dielectric oxide structure

Washington, DC: U.S. Patent and Trademark Office.

Piezoelectric resonating structures for microelectronic cooling

Smart Materials & Structures, 12(2), 181–187.

Spatial inhomogeneity of imprint and switching behavior in ferroelectric capacitors

APPLIED PHYSICS LETTERS, 82(18), 3071–3073.

Voltage-controlled RF filters employing thin-film barium-strontium-titanate tunable capacitors

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 51(2), 462–467.

Crystallization in SiO2-metal oxide alloys

JOURNAL OF MATERIALS RESEARCH, 17(7), 1571–1579.

Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films

JOURNAL OF APPLIED PHYSICS, 92(5), 2734–2739.

Orientation effects in chemical solution derived Pb(Zr-0.3,Ti-0.7)O-3 thin films on ferroelectric properties

THIN SOLID FILMS, 416(1-2), 264–270.

Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials

Rodriguez, B. J., Gruverman, A., Kingon, A. I., & Nemanich, R. J. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 252–258.

Piezoresponse force microscopy for polarity imaging of GaN

APPLIED PHYSICS LETTERS, 80(22), 4166–4168.

Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures

JOURNAL OF APPLIED PHYSICS, 92(1), 82–86.

Temperature and thickness dependent permittivity of (Ba,Sr)TiO3 thin films

APPLIED PHYSICS LETTERS, 81(2), 340–342.

Tunable barium strontium titanate thin film capacitors for RF and microwave applications

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 12(1), 3–5.

Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy

APPLIED PHYSICS LETTERS, 78(18), 2751–2753.

Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)(1-x/4)O-3 thin films for low-voltage operation

Thin Solid Films, 394(1-2), 131–135.

Contribution of dielectric and metallic losses in RF/microwave tunable varactors using (Ba,Sr)TiO3 thin films

Integrated Ferroelectrics, 39(1-4), 1343–1352.

Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes

JOURNAL OF MATERIALS RESEARCH, 16(4), 1185–1189.

Electrical properties of Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films with various iridium-based top electrodes

Integrated Ferroelectrics, 33(1-4), 155–164.

Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD

Integrated Ferroelectrics, 35(1-4), 1881–1888.

High temperature stability in lanthanum and zirconia-based gate dielectrics

JOURNAL OF APPLIED PHYSICS, 90(7), 3476–3482.

Lead zirconate titanate thin films on base-metal foils: an approach for embedded high-permittivity passive components

Journal of the American Ceramic Society, 84(10), 2436–2438.

Load characterization of high displacement piezoelectric actuators with various end conditions

SENSORS AND ACTUATORS A-PHYSICAL, 94(1-2), 19–24.

Metalorganic chemical vapor deposition Pb(Zr,Ti)O-3 and selected lower electrode structures as a pathway to integrated piezoelectric microelectromechanical systems

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 19, pp. 1833–1840.

O-18 study of the oxidation of reactively sputtered Ti1-xAlxN barrier

JOURNAL OF MATERIALS RESEARCH, 16(9), 2591–2599.

Recovery characteristics of hydrogen-damaged (Pb,La)(Zr,Ti)O-3 capacitors with Pt and IrO2 top electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(7), F137–F139.

Structure and stability of La2O3/SiO2 layers on Si(001)

APPLIED PHYSICS LETTERS, 79(1), 102–104.

Study of TaSiN diffusion barrier

Integrated Ferroelectrics, 38(1-4), 865–872.

The low-voltage-switching behavior of sol-gel-derived Pb(Zr,Ti)O-3 thin film capacitors

Integrated Ferroelectrics, 39(1-4), 963–972.

Thick electrodes for high frequency high Q tunable ferroelectric thin film varactors

Integrated Ferroelectrics, 39(1-4), 1271–1280.

Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O-3 thin films

APPLIED PHYSICS LETTERS, 78(19), 2885–2887.

Alternative dielectrics to silicon dioxide for memory and logic devices

[Review of ]. NATURE, 406(6799), 1032–1038.

Grain boundaries in barium strontium titanate thin films: Structure, chemistry and influence on electronic properties

INTERFACE SCIENCE, 8(2-3), 209–221.

Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties

APPLIED PHYSICS LETTERS, 76(4), 496–498.

Narrow resonance profiling study of the oxidation of reactively sputtered Ti1-xAlxN thin films

Hugon, M. C., Desvignes, J. M., Agius, B., Vickridge, I. C., Kim, D. J., & Kingon, A. I. (2000, March). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 161, pp. 578–583.

Oxidation resistance of TaSiN diffusion barriers

Integrated Ferroelectrics, 31(1-4), 315–322.

Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes

JOURNAL OF APPLIED PHYSICS, 88(11), 6690–6695.

Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy

JOURNAL OF APPLIED PHYSICS, 87(11), 8031–8034.

Thermally induced voltage offsets in Pb(Zr,Ti)O-3 thin films

APPLIED PHYSICS LETTERS, 77(19), 3036–3038.

Accommodation of nonstoichiometry in (100) fiber-textured (BaxSr1-x)Ti1-yO3+z thin films grown by chemical vapor deposition

APPLIED PHYSICS LETTERS, 74(17), 2432–2434.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

JOURNAL OF MATERIALS RESEARCH, 14(11), 4395–4401.

Device physics - Memories are made of ...

Kingon, A. (1999, October 14). NATURE, Vol. 401, pp. 658–659.

Ferroelectric films and devices

[Review of ]. Current Opinion in Solid State and Materials Science, 4(1), 39–44.

Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 16(1-2), 57–63.

Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 86(8), 4565–4575.

Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Integrated Ferroelectrics, 26(1-4), 955–970.

Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films

JOURNAL OF MATERIALS RESEARCH, 14(4), 1371–1377.

Influences on imprint failure of SrBi2Ta2O9 thin film capacitors

Integrated Ferroelectrics, 25(1-4), 691–701.

Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients

INTEGRATED FERROELECTRICS, Vol. 24, pp. 139–146.

Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer

Maiwa, H., Christman, J. A., Kim, S. H., Kim, D. J., Maria, J. P., Chen, B., … Kingon, A. I. (1999, September). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 38, pp. 5402–5405.

Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

JOURNAL OF MATERIALS RESEARCH, 14(6), 2476–2483.

Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors

APPLIED PHYSICS LETTERS, 74(8), 1162–1164.

The effect of RuO2/Pt hybrid bottom electrode structure on the leakage and fatigue properties of chemical solution derived Pb(ZrxTi1-x)O-3 thin films

JOURNAL OF MATERIALS RESEARCH, 14(3), 1018–1025.

Dielectric properties and microstructure of thin BST films

Journal of the Korean Physical Society, 32 pt.4(suppl.), 1591–1594.

Electrical properties of (Ba, Sr)TiO3 thin films prepared by liquid delivery MOCVD

Journal of the Korean Physical Society, 32 pt.4(suppl.), 1652–1656.

Ir and Ru bottom electrodes for (Ba, Sr) TiO3 thin films deposited by liquid delivery source chemical vapor deposition

THIN SOLID FILMS, 323(1-2), 285–290.

Isolation techniques and electrical characterization of single grain boundaries of Bi2Sr2CaCu2O2 high-temperature superconductor

PHYSICA C, 295(3-4), 225–234.

Modulated-structure of PZT/PT ferroelectric thin films for non-volatile random access memories

Washington, DC: U.S. Patent and Trademark Office.

Piezoelectric measurements with atomic force microscopy

APPLIED PHYSICS LETTERS, 73(26), 3851–3853.

Preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films

Fujimura, N., Thomas, D. T., Streiffer, S. K., & Kingon, A. J. (1998, September). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, Vol. 37, pp. 5185–5188.

Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals

Integrated Ferroelectrics, 22(1-4), 603–614.

Thermally induced imprint properties of chemical solution derived PLZT thin films

Integrated Ferroelectrics, 22(1-4), 653–662.

Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories

JOURNAL OF APPLIED PHYSICS, 82(5), 2359–2364.