Works (15)

Updated: July 5th, 2023 15:38

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quiñones-García n ...

Sources: Web Of Science, NC State University Libraries, ORCID
Added: June 20, 2022

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

By: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Contributors: P. Bagheri n, J. Kim n, S. Washiyama n, P. Reddy*, A. Klump n, R. Kirste*, S. Mita*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 23, 2021

2021 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: November 6, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy n, S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

Contributors: P. Bagheri n, P. Reddy n, S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Contributors: S. Washiyama n, K. Mirrielees n, P. Bagheri n, J. Baker n, J. Kim n, Q. Guo n, R. Kirste*, Y. Guan n ...

Sources: Web Of Science, NC State University Libraries, ORCID
Added: March 29, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

By: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

Contributors: J. Kim n, P. Bagheri n, S. Washiyama n, A. Klump n, R. Kirste*, S. Mita*, P. Reddy*, R. Collazo n, Z. Sitar n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 26, 2021

2019 journal article

Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

ACS PHOTONICS, 6(5), 1139–1145.

By: K. Kelley n, E. Runnerstrom n, E. Sachet n, C. Shelton n, E. Grimley n, A. Klump n, J. LeBeau n, Z. Sitar n ...

author keywords: nanophotonics; CdO; infrared; thin film; epsilon-near-zero; plasmonics
Source: Web Of Science
Added: June 17, 2019

2018 journal article

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

By: A. Klump n, C. Zhou n, F. Stevie n, R. Collazo n & Z. Sitar n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP), 2018-January, 1–2.

By: B. Sarkar n, P. Reddy*, A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n, Z. Sitar n

Contributors: B. Sarkar n, P. Reddy*, A. Klump n, R. Rounds n, M. Breckenridge n, B. Haidet n, S. Mita, R. Kirste, R. Collazo n, Z. Sitar n

Sources: NC State University Libraries, NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

By: R. Rounds n, B. Sarkar n, D. Alden n, Q. Guo n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2018 journal article

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

By: R. Rounds n, B. Sarkar n, A. Klump n, C. Hartmann*, T. Nagashima*, R. Kirste n, A. Franke n, M. Bickermann* ...

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

By: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

Contributors: B. Sarkar n, S. Mita n, P. Reddy n, A. Klump n, F. Kaess n, J. Tweedie n, I. Bryan n, Z. Bryan n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

By: F. Kaess n, S. Mita n, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

Contributors: F. Kaess n, S. Mita n, J. Xie n, P. Reddy n, A. Klump n, L. Hernandez-Balderrama n, S. Washiyama n, A. Franke n ...

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

By: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n ...

Contributors: P. Reddy n, M. Hoffmann n, F. Kaess n, Z. Bryan n, I. Bryan n, M. Bobea n, A. Klump n, J. Tweedie n ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

JOURNAL OF APPLIED PHYSICS, 120(23).

By: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann* ...

Contributors: F. Kaess n, P. Reddy n, D. Alden n, A. Klump n, L. Hernandez-Balderrama n, A. Franke n, R. Kirste*, A. Hoffmann*, R. Collazo n, Z. Sitar n

Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

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