Andrew J. Klump

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

ACS PHOTONICS, 6(5), 1139–1145.

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 120(10).

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

JOURNAL OF APPLIED PHYSICS, 120(18).

The effect of illumination power density on carbon defect configuration in silicon doped GaN

JOURNAL OF APPLIED PHYSICS, 120(23).