Andrew J. Klump

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.

A pathway to highly conducting Ge-doped AlGaN

Bagheri, P., Kim, J. H., Washiyama, S., Reddy, P., Klump, A., Kirste, R., … Sitar, Z. (2021, November 22). Journal of Applied Physics, Vol. 11.

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). Semiconductor Science and Technology, Vol. 1.

On the Ge shallow-to-deep level transition in Al-rich AlGaN

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021, August 3). Journal of Applied Physics, Vol. 8.

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Washiyama, S., Mirrielees, K. J., Bagheri, P., Baker, J. N., Kim, J.-H., Guo, Q., … Sitar, Z. (2021, January 25). Applied Physics Letters, Vol. 118.

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

Kim, J. H., Bagheri, P., Washiyama, S., Klump, A., Kirste, R., Mita, S., … Sitar, Z. (2021, July 12). Applied Physics Letters, Vol. 7.

Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

Kelley, K. P., Runnerstrom, E. L., Sachet, E., Shelton, C. T., Grimley, E. D., Klump, A., … Maria, J.-P. (2019, April 18). ACS Photonics.

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Klump, A., Zhou, C., Stevie, F. A., Collazo, R., & Sitar, Z. (2018, January 22). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Vol. 36.

On contacts to III-nitride deep-UV emitters

Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018, February 1). 2018 3rd International Conference on Microwave and Photonics (ICMAP), pp. 1–2.

The influence of point defects on the thermal conductivity of AlN crystals

Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018, May 11). Journal of Applied Physics, Vol. 123.

Thermal conductivity of single-crystalline AlN

Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., … Collazo, R. (2018, June 11). Applied Physics Express, Vol. 11.

High free carrier concentration in p-GaN grown on AlN substrates

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). Applied Physics Letters, Vol. 111, p. 032109.

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Kaess, F., Mita, S., Xie, J., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., … Sitar, Z. (2016, September 8). Journal of Applied Physics, Vol. 120, p. 105701.

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., … Sitar, Z. (2016, November 14). Journal of Applied Physics, Vol. 120, p. 185704.

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Kaess, F., Reddy, P., Alden, D., Klump, A., Hernandez-Balderrama, L. H., Franke, A., … al. (2016, December 19). Journal of Applied Physics, Vol. 120, p. 235705.