Works (15)

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste ...

Sources: Web Of Science, ORCID
Added: November 6, 2021

2021 journal article

A pathway to highly conducting Ge-doped AlGaN

JOURNAL OF APPLIED PHYSICS, 130(20).

Sources: Web Of Science, ORCID
Added: November 23, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

APPLIED PHYSICS LETTERS, 118(4).

By: S. Washiyama, K. Mirrielees, P. Bagheri, J. Baker, J. Kim, Q. Guo, R. Kirste, Y. Guan ...

Sources: Web Of Science, ORCID
Added: March 29, 2021

2021 journal article

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

APPLIED PHYSICS LETTERS, 119(2).

Sources: Web Of Science, ORCID
Added: July 26, 2021

2019 journal article

Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials

ACS PHOTONICS, 6(5), 1139–1145.

By: K. Kelley, E. Runnerstrom, E. Sachet, C. Shelton, E. Grimley, A. Klump, J. LeBeau, Z. Sitar ...

Source: Web Of Science
Added: June 17, 2019

2018 journal article

Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 36(3).

By: A. Klump, C. Zhou, F. Stevie, R. Collazo & Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

By: B. Sarkar, P. Reddy, A. Klump, R. Rounds n, M. Breckenridge, B. Haidet n, S. Mita*, R. Kirste*, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

Journal of Applied Physics, 123(18).

By: R. Rounds n, B. Sarkar, D. Alden n, Q. Guo, A. Klump, C. Hartmann*, T. Nagashima*, R. Kirste ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Thermal conductivity of single-crystalline AIN

Applied Physics Express, 11(7).

By: R. Rounds n, B. Sarkar, A. Klump, C. Hartmann*, T. Nagashima*, R. Kirste, A. Franke n, M. Bickermann* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics, 120(10), 105701.

By: F. Kaess, S. Mita, J. Xie, P. Reddy, A. Klump, L. Hernandez-Balderrama, S. Washiyama, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

Journal of Applied Physics, 120(18), 185704.

By: P. Reddy, M. Hoffmann, F. Kaess, Z. Bryan, I. Bryan, M. Bobea, A. Klump, J. Tweedie* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

The effect of illumination power density on carbon defect configuration in silicon doped GaN

Journal of Applied Physics, 120(23), 235705.

By: F. Kaess, P. Reddy, D. Alden, A. Klump, L. Hernandez-Balderrama n, A. Franke, R. Kirste*, A. Hoffmann* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018