2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
2022 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
2021 journal article
A pathway to highly conducting Ge-doped AlGaN
JOURNAL OF APPLIED PHYSICS, 130(20).
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
2021 journal article
Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping
APPLIED PHYSICS LETTERS, 118(4).
2021 journal article
Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
APPLIED PHYSICS LETTERS, 119(2).
2019 journal article
Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials
ACS PHOTONICS, 6(5), 1139–1145.
2018 journal article
Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 36(3).
2018 conference paper
On Contacts to III-nitride deep-UV emitters
2018 3rd International Conference on Microwave and Photonics (ICMAP).
2018 journal article
The influence of point defects on the thermal conductivity of AlN crystals
JOURNAL OF APPLIED PHYSICS, 123(18).
2018 journal article
Thermal conductivity of single-crystalline AIN
APPLIED PHYSICS EXPRESS, 11(7).
2017 journal article
High free carrier concentration in p-GaN grown on AlN substrates
APPLIED PHYSICS LETTERS, 111(3).
2016 journal article
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
JOURNAL OF APPLIED PHYSICS, 120(10).
2016 journal article
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
JOURNAL OF APPLIED PHYSICS, 120(18).
2016 journal article
The effect of illumination power density on carbon defect configuration in silicon doped GaN
JOURNAL OF APPLIED PHYSICS, 120(23).