@article{gao_huang_krishnaswami_richmond_agarwal_2008, title={Comparison of static and switching characteristics of 1200 V 4H-SiCBJT and 1200 V Si-IGBT}, volume={44}, ISSN={["1939-9367"]}, DOI={10.1109/TIA.2008.921408}, abstractNote={In this paper, static and switching characteristics of a 1200 V 4H-silicon carbide (SiC) bipolar junction transistor (BJT) at a bus voltage of 600 V are reported for the first time. Comparison was made between the SiC BJT and a 1200 V Si insulated gate bipolar transistor (IGBT). The experimental data show that the SiC BJT has much smaller conduction and switching losses than the Si IGBT. The SiC BJT also shows an extremely large reverse bias safe operation area, and no second breakdown was observed. This removes one of the most unattractive aspects of the BJT. The results prove that, unlike Si BJTs, BJTs in 4H-SiC are good competitors for Si IGBTs.}, number={3}, journal={IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS}, author={Gao, Yan and Huang, Alex Q. and Krishnaswami, Sumi and Richmond, Jim and Agarwal, Anant K.}, year={2008}, pages={887–893} }
 @article{gao_huang_agarwal_zhang_2008, title={Theoretical and experimental analyses of safe operating area (SOA) of 1200-V 4H-SiC BJT}, volume={55}, ISSN={["1557-9646"]}, DOI={10.1109/TED.2008.926682}, abstractNote={The safe operating area (SOA) of 1200-V SiC bipolar junction transistor (BJT) is investigated by experiments and simulations. The SiC BJT is free of the second breakdown even under the turn-off power density of 3.7 MW/cm2. The theoretical boundary of reverse-biased SOA caused by the false turn-on is obtained by simulations. The short-circuit capability of the 1200-V SiC BJT is also investigated theoretically and experimentally. Self-heating is considered by the nonisothermal simulation, and 1800-K maximum local temperature is the simulated critical temperature of device failure. The surface condition is very critical for short-circuit capability. From simulations, when the interface trap density increases, the critical temperature decreases. This is believed to be the reason why the experimental results show much shorter short-circuit withstand time than the simulation showed.}, number={8}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Gao, Yan and Huang, Alex Q. and Agarwal, Anant K. and Zhang, Qingchun}, year={2008}, month={Aug}, pages={1887–1893} }
 @article{agarwal_wang_2007, title={AN EXPERIMENTAL STUDY ON SECURITY PROTOCOLS IN WLANS}, ISSN={["1860-4862"]}, DOI={10.1007/978-0-387-33112-6_12}, journal={WIRELESS NETWORK SECURITY}, publisher={New York: Springer}, author={Agarwal, Avesh Kumar and Wang, Wenye}, year={2007}, pages={295–322} }
 @inproceedings{zhao_wang_huang_agarwal_2007, title={Comparisons of SiC MOSFET and Si IGBT based motor drive systems}, ISBN={9781424412600}, DOI={10.1109/07ias.2007.51}, abstractNote={With the rapid development of silicon carbide (SiC) material quality, SiC power devices are gaining tremendous attentions in power electronics. In this paper, a SiC device based motor drive system is performed to provide a quantitative estimate of the system improvement. Two 60 kW motor drive systems based on SiC MOSFET/Schottky diode and Si IGBTs are designed. The power losses of the two inverters with sinusoidal pulse width modulation (SPWM) control are calculated analytically. By comparing the efficiencies, sizes and temperatures of the two designed systems, SiC device shows the superior advantages of smaller loss, better efficiency and smaller size in the same motor drive application.}, booktitle={Conference record of the 2007 IEEE Industry Applications Conference forty-second IAS annual meeting}, publisher={New York:  IEEE}, author={Zhao, T. F. and Wang, J. and Huang, A. Q. and Agarwal, A.}, year={2007}, pages={331–335} }
 @article{agarwal_wang_2007, title={On the impact of quality of protection in wireless local area networks with IP mobility}, volume={12}, ISSN={["1572-8153"]}, DOI={10.1007/s11036-006-0009-6}, number={1}, journal={MOBILE NETWORKS & APPLICATIONS}, author={Agarwal, Avesh K. and Wang, Wenye}, year={2007}, month={Feb}, pages={93–110} }
 @article{wang_liang_agarwal_2005, title={Integration of authentication and mobility management in third generation and WLAN data networks}, volume={5}, ISSN={["1530-8677"]}, DOI={10.1002/wcm.335}, abstractNote={Abstract}, number={6}, journal={WIRELESS COMMUNICATIONS & MOBILE COMPUTING}, author={Wang, WY and Liang, W and Agarwal, AK}, year={2005}, month={Sep}, pages={665–678} }
 @article{beaman_agarwal_kononchuk_koveshnikov_bondarenko_rozgonyi_1997, title={Gettering of iron in silicon-on-insulator wafers}, volume={71}, ISSN={["1077-3118"]}, DOI={10.1063/1.119741}, abstractNote={Gettering of Fe in silicon-on-insulator material has been investigated on both the bonded and separation by implantation of oxygen (SIMOX) platforms. Reduction of electrically active iron in intentionally contaminated and annealed wafers has been measured by deep level transient spectroscopy. These data, coupled with structural characterization techniques, such as transmission electron microscopy and preferential chemical etching, provide evidence that structural postimplantation damage below the buried oxide (BOX) in SIMOX wafers is an effective site for gettering of iron with the iron gettering efficiency varying with the SIMOX processing. Gettering was not observed in bonded wafers, and the lower BOX interface did not provide any iron gettering in either bonded or SIMOX wafers.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Beaman, KL and Agarwal, A and Kononchuk, O and Koveshnikov, S and Bondarenko, I and Rozgonyi, GA}, year={1997}, month={Aug}, pages={1107–1109} }
 @inproceedings{agarwal_wang, title={Measuring performance impact of security protocols in wireless local area networks}, booktitle={2nd International Conference on Broadband Networks (Broadnets 2005)}, author={Agarwal, A. K. and Wang, W. Y.}, pages={625-} }