Abdennaceur Karoui

A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon

JOURNAL OF APPLIED PHYSICS, 108(3).

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS, 84(11), 1889–1891.

Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104.

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263.

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling

JOURNAL OF APPLIED PHYSICS, 96(6), 3264–3271.

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313.

Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777.

Integrated AlN/diamond heat spreaders for silicon device processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1974–1982.

Role of nitrogen related complexes in the formation of defects in silicon

APPLIED PHYSICS LETTERS, 80(12), 2114–2116.