Works (11)

Updated: July 5th, 2023 16:00

2010 journal article

A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon

JOURNAL OF APPLIED PHYSICS, 108(3).

By: F. Karoui n & A. Karoui*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment

JOURNAL OF APPLIED PHYSICS, 97(8).

By: N. Stoddard n, G. Duscher n, A. Karoui n, F. Stevie n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers

APPLIED PHYSICS LETTERS, 84(11), 1889–1891.

By: A. Kvit n, A. Karoui n, G. Duscher n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99–104.

By: F. Karoui n, A. Karoui n, G. Rozgonyi n, M. Hourai & K. Sueoka*

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

JOURNAL OF APPLIED PHYSICS, 96(6), 3255–3263.

By: A. Karoui n, F. Karoui n, G. Rozgonyi n & D. Yang*

co-author countries: China 🇨🇳 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling

JOURNAL OF APPLIED PHYSICS, 96(6), 3264–3271.

By: A. Karoui n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 journal article

In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon

ELECTROCHEMICAL AND SOLID STATE LETTERS, 6(11), G134–G136.

By: N. Stoddard n, A. Karoui n, G. Duscher n, A. Kvit n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2003 article

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. (2003, April). MICROELECTRONIC ENGINEERING, Vol. 66, pp. 305–313.

By: G. Rozgonyi*, A. Karoui*, A. Kvit* & G. Duscher*

author keywords: Czochralski silicon wafers; nitrogen doping
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(12), G771–G777.

By: A. Karoui n, F. Karoui n, G. Rozgonyi n, M. Hourai & K. Sueoka

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Integrated AlN/diamond heat spreaders for silicon device processing

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 20(6), 1974–1982.

By: S. Yoganand n, K. Jagannadham n, A. Karoui n & H. Wang*

co-author countries: United States of America 🇺🇸

Contributors: S. Yoganand n, K. Jagannadham n, A. Karoui n & H. Wang*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Role of nitrogen related complexes in the formation of defects in silicon

APPLIED PHYSICS LETTERS, 80(12), 2114–2116.

By: A. Karoui n, F. Karoui n, A. Kvit n, G. Rozgonyi n & D. Yang*

co-author countries: China 🇨🇳 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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