Anthony L. Rice

Sputtered ferroelectric aluminum scandium boron nitride (Al1−x−yBxScyN)/n-GaN heterostructures

Skidmore, C., Nordlander, J., Hayden, J., Rice, A., Collazo, R., Sitar, Z., & Maria, J.-P. (2025, July 2). Journal of Applied Physics, Vol. 138.

The role of surface kinetics on composition and quality of AlGaN

Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., … Sitar, Z. (2016, July 2). Journal of Crystal Growth, Vol. 451, pp. 65–71.

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. (2015, December 30). Journal of Crystal Growth, Vol. 438, pp. 81–89.

Surface preparation of non‐polar single‐crystalline AlN substrates

Bryan, I., Akouala, C. R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., … Sitar, Z. (2014, January 22). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 11, pp. 454–457.

Comparative study of etching high crystalline quality AlN and GaN

Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., … Sitar, Z. (2013, January 4). Journal of Crystal Growth, Vol. 366, pp. 20–25.

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Neuschl, B., Thonke, K., Feneberg, M., Goldhahn, R., Wunderer, T., Yang, Z., … Sitar, Z. (2013, September 16). Applied Physics Letters, Vol. 103.

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., … Sitar, Z. (2013, February 11). Applied Physics Letters, Vol. 102.

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., … Sitar, Z. (2013, March 28). Journal of Applied Physics, Vol. 113.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., … Collazo, R. (2012, December 4). Journal of Electronic Materials, Vol. 42, pp. 815–819.

Schottky barrier and interface chemistry for Ni contacted to Al_0.8Ga_0.2N grown on c‐oriented AlN single crystal substrates

Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J., Akouala, R. C., & Sitar, Z. (2012, January 26). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 9, pp. 584–587.

265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., … Sitar, Z. (2011, January 1). 2011 Conference on Lasers and Electro-Optics (CLEO).

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., … Sitar, Z. (2011, January 1). Journal of The Electrochemical Society, Vol. 158, pp. H530–535.

On the strain in n-type GaN

Xie, J., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., … Sitar, Z. (2011, October 3). Applied Physics Letters, Vol. 99.

Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2011, May 9). Physica Status Solidi. C, Conferences and Critical Reviews/Physica Status Solidi. C, Current Topics in Solid State Physics, Vol. 8.

Sharp bound and free exciton lines from homoepitaxial AlN

Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., … Goldhahn, R. (2011, May 26). Physica Status Solidi (a), Vol. 208, pp. 1520–1522.

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

Craft, H. S., Rice, A. L., Collazo, R., Sitar, Z., & Maria, J.-P. (2011, February 21). Applied Physics Letters, Vol. 98.

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

The effect of N-polar GaN domains as Ohmic contacts

Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. (2010, September 20). Applied Physics Letters, Vol. 97.

X-ray characterization of composition and relaxation of AlxGa1−xN(≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Tweedie, J., Collazo, R., Rice, A., Xie, J., Mita, S., Dalmau, R., & Sitar, Z. (2010, August 15). Journal of Applied Physics, Vol. 108.

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2009, December 8). Physica Status Solidi (a), Vol. 207, pp. 45–48.

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2009, September 18). Journal of Crystal Growth, Vol. 312, pp. 1321–1324.

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. (2008, July 1). Journal of Applied Physics, Vol. 104.

Simultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping

Collazo, R., Mita, S., Rice, A., Dalmau, R. F., & Sitar, Z. (2007, November 19). Applied Physics Letters, Vol. 91.

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.