Works (24)

2016 | journal article

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

Journal of Crystal Growth, 438, 81–89.

By: I. Bryan, Z. Bryan, S. Mita, A. Rice, J. Tweedie, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2016 | journal article

The role of surface kinetics on composition and quality of AlGaN

Journal of Crystal Growth, 451, 65–71.

By: I. Bryan, Z. Bryan, S. Mita, A. Rice, L. Hussey, C. Shelton, J. Tweedie, J. Maria, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2014 | conference paper

Surface preparation of non-polar single-crystalline AlN substrates

In Physica status solidi c: current topics in solid state physics, vol 11, no 3-4 (Vol. 11, pp. 454–457).

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Comparative study of etching high crystalline quality AlN and GaN

Journal of Crystal Growth, 366, 20–25.

By: W. Guo, J. Xie, C. Akouala, S. Mita, A. Rice, J. Tweedie, I. Bryan, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied Physics Letters, 103(12).

By: B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N. Johnson, J. Xie ...

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Fermi level control of point defects during growth of Mg-doped GaN

Journal of Electronic Materials, 42(5), 815–819.

By: Z. Bryan, M. Hoffmann, J. Tweedie, R. Kirste, G. Callsen, I. Bryan, A. Rice, M. Bobea ...

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Applied Physics Letters, 102(6).

By: I. Bryan, A. Rice, L. Hussey, Z. Bryan, M. Bobea, S. Mita, J. Xie, R. Kirste, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2013 | journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

Journal of Applied Physics, 113(12).

By: M. Bobea, J. Tweedie, I. Bryan, Z. Bryan, A. Rice, R. Dalmau, J. Xie, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2012 | conference paper

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 584–587).

By: J. Tweedie, R. Collazo, A. Rice, S. Mita, J. Xie, R. Akouala, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

In 2011 Conference on Lasers and Electro-Optics (CLEO).

By: R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, B. Moody, R. Schlesser ...

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates

Journal of the Electrochemical Society, 158(5), H530–535.

By: R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke ...

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

On the strain in n-type GaN

Applied Physics Letters, 99(14).

By: J. Xie, S. Mita, L. Hussey, A. Rice, J. Tweedie, J. LeBeau, R. Collazo, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | conference paper

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).

By: R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Sharp bound and free exciton lines from homoepitaxial AlN

Physica Status Solidi. A, Applications and Materials Science, 208(7), 1520–1522.

By: M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, Z. Sitar, R. Dalmau, J. Xie, S. Mita, R. Goldhahn

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

Applied Physics Letters, 98(8).

Source: NC State University Libraries
Added: August 6, 2018

2011 | journal article

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9).

By: R. Kirste, R. Collazo, G. Callsen, M. Wagner, T. Kure, J. Reparaz, S. Mita, J. Xie ...

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

In Physica Status Solidi. A, Applications and Materials Science (Vol. 207, pp. 45–48).

By: R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | conference paper

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

In Journal of Crystal Growth (Vol. 312, pp. 1321–1324).

By: A. Rice, R. Collazo, J. Tweedie, J. Xie, S. Mita & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4).

By: A. Rice, R. Collazo, J. Tweedie, R. Dalmau, S. Mita, J. Xie, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

Journal of Applied Physics, 108(4).

By: J. Tweedie, R. Collazo, A. Rice, J. Xie, S. Mita, R. Dalmau, Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2010 | journal article

The effect of N-polar GaN domains as Ohmic contacts

Applied Physics Letters, 97(12).

By: J. Xie, S. Mita, R. Collazo, A. Rice, J. Tweedie & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2008 | journal article

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

Journal of Applied Physics, 104(1).

Source: NC State University Libraries
Added: August 6, 2018

2007 | journal article

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

Applied Physics Letters, 91(21).

Source: NC State University Libraries
Added: August 6, 2018

| conference paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. In Quantum sensing and nanophotonic devices x (Vol. 8631).

Source: NC State University Libraries
Added: August 6, 2018