Works (24)

Updated: July 5th, 2023 15:54

2016 journal article

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

JOURNAL OF CRYSTAL GROWTH, 438, 81–89.

By: I. Bryan n, Z. Bryan n, S. Mita*, A. Rice n, J. Tweedie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 journal article

The role of surface kinetics on composition and quality of AlGaN

JOURNAL OF CRYSTAL GROWTH, 451, 65–71.

By: I. Bryan n, Z. Bryan n, S. Mita*, A. Rice n, L. Hussey n, C. Shelton n, J. Tweedie*, J. Maria n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Growth models; Surface kinetics; Metalorganic chemical vapor deposition; Nitrides
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

By: I. Bryan n, C. Akouala n, J. Tweedie n, Z. Bryan n, A. Rice n, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: aluminum nitride; aluminum hydroxides; X-ray photoelectron spectroscopy; surface preparation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

By: W. Guo n, J. Xie*, C. Akouala n, S. Mita*, A. Rice n, J. Tweedie n, I. Bryan n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Etching; Surfaces; Nitrides; Semiconducting III-V materials; Light emitting diodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied Physics Letters, 103(12).

By: B. Neuschl*, K. Thonke*, M. Feneberg*, R. Goldhahn*, T. Wunderer*, Z. Yang*, N. Johnson*, J. Xie* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

By: Z. Bryan n, M. Hoffmann n, J. Tweedie n, R. Kirste n, G. Callsen*, I. Bryan n, A. Rice n, M. Bobea n ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: Mg; GaN; UV excitation; Photoluminescence; Metal-organic chemical vapordeposition (MOCVD)
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

By: I. Bryan n, A. Rice n, L. Hussey n, Z. Bryan n, M. Bobea n, S. Mita*, J. Xie*, R. Kirste n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

By: M. Bobea n, J. Tweedie n, I. Bryan n, Z. Bryan n, A. Rice n, R. Dalmau*, J. Xie*, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587.

By: J. Tweedie n, R. Collazo n, A. Rice n, S. Mita, J. Xie, R. Akouala n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Schottky barrier; AlN; AlGaN; XPS
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 conference paper

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, B. Moody*, R. Schlesser* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2011 journal article

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535.

By: R. Dalmau*, B. Moody*, R. Schlesser*, S. Mita*, J. Xie*, M. Feneberg*, B. Neuschl*, K. Thonke* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

By: J. Xie*, S. Mita*, L. Hussey n, A. Rice n, J. Tweedie n, J. LeBeau n, R. Collazo n, Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: dislocation climb; elemental semiconductors; Fermi level; gallium compounds; germanium; III-V semiconductors; MOCVD; semiconductor doping; semiconductor epitaxial layers; tensile strength; transmission electron microscopy; vacancies (crystal); vapour phase epitaxial growth; wide band gap semiconductors; X-ray diffraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n, C. Wetzel, A. Khan

co-author countries: United States of America 🇺🇸
author keywords: aluminium nitride; aluminium gallium nitride; n-type doping; UV light emitting diodes
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Sharp bound and free exciton lines from homoepitaxial AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522.

By: M. Feneberg*, B. Neuschl*, K. Thonke*, R. Collazo n, A. Rice n, Z. Sitar n, R. Dalmau*, J. Xie*, S. Mita*, R. Goldhahn*

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: aluminum nitride; donors; excitons; photoluminescence
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

APPLIED PHYSICS LETTERS, 98(8).

By: H. Craft n, A. Rice n, R. Collazo n, Z. Sitar n & J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

By: R. Kirste*, R. Collazo n, G. Callsen*, M. Wagner*, T. Kure*, J. Sebastian Reparaz, S. Mita*, J. Xie* ...

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2010 article

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48.

By: R. Collazo n, S. Mita*, J. Xie*, A. Rice n, J. Tweedie n, R. Dalmau*, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 article

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

By: A. Rice n, R. Collazo n, J. Tweedie n, J. Xie*, S. Mita* & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: Low-pressure metalorganic vapor phase epitaxy; Organometallic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; Semiconducting ternary compounds
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

By: A. Rice n, R. Collazo n, J. Tweedie n, R. Dalmau*, S. Mita*, J. Xie*, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2010 journal article

The effect of N-polar GaN domains as Ohmic contacts

APPLIED PHYSICS LETTERS, 97(12).

By: J. Xie*, S. Mita*, R. Collazo n, A. Rice n, J. Tweedie n & Z. Sitar n

co-author countries: United States of America 🇺🇸
author keywords: adsorption; contact resistance; elemental semiconductors; gallium compounds; Hall effect; III-V semiconductors; MOCVD; ohmic contacts; secondary ion mass spectra; semiconductor doping; silicon; wide band gap semiconductors
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 108(4).

By: J. Tweedie n, R. Collazo n, A. Rice n, J. Xie*, S. Mita*, R. Dalmau*, Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

By: S. Mita n, R. Collazo n, A. Rice n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

By: R. Collazo n, S. Mita n, A. Rice n, R. Dalmau n & Z. Sitar n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

conference paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.

Source: NC State University Libraries
Added: August 6, 2018

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