Anthony L. Rice

Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides

JOURNAL OF CRYSTAL GROWTH, 438, 81–89.

The role of surface kinetics on composition and quality of AlGaN

JOURNAL OF CRYSTAL GROWTH, 451, 65–71.

Surface preparation of non-polar single-crystalline AlN substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 454–457.

Comparative study of etching high crystalline quality AlN and GaN

JOURNAL OF CRYSTAL GROWTH, 366, 20–25.

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied Physics Letters, 103(12).

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 815–819.

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 102(6).

X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN

JOURNAL OF APPLIED PHYSICS, 113(12).

Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 584–587.

265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization

2011 Conference on Lasers and Electro-Optics (CLEO).

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158(5), H530–H535.

On the strain in n-type GaN

APPLIED PHYSICS LETTERS, 99(14).

Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Sharp bound and free exciton lines from homoepitaxial AlN

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(7), 1520–1522.

Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN

APPLIED PHYSICS LETTERS, 98(8).

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

Journal of Applied Physics, 110(9), 093503.

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. (2010, January). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 207, pp. 45–48.

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE

Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010, April 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 1321–1324.

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

Journal of Applied Physics, 108(4), 043510.

The effect of N-polar GaN domains as Ohmic contacts

APPLIED PHYSICS LETTERS, 97(12).

X-ray characterization of composition and relaxation of Al(x)Ga(1-x)N(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 108(4).

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

JOURNAL OF APPLIED PHYSICS, 104(1).

Simultaneous growth of a GaN p/n lateral polarity junction by polar selective doping

APPLIED PHYSICS LETTERS, 91(21).

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., … Sitar, Z. Quantum sensing and nanophotonic devices x, 8631.