Ahmed M. Emara

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

APPLIED PHYSICS LETTERS, 92(10).

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

APPLIED PHYSICS LETTERS, 90(15).

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).