Ayse Merve Ozbek

Works (3)

Updated: July 5th, 2023 15:47

2011 journal article

Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363.

By: A. Ozbek n & B. Baliga  n

author keywords: Breakdown voltage; edge termination; gallium nitride (GaN); Schottky diode
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302.

By: A. Ozbek n & B. Baliga  n

author keywords: Breakdown voltage; edge termination; GaN; Schottky diode
Source: Web Of Science
Added: August 6, 2018

2011 personal communication

Tunneling coefficient for GaN Schottky barrier diodes

Ozbek, A. M., & Baliga, B. J. (2011, August).

By: A. Ozbek n & B. Baliga  n

author keywords: Tunneling coefficient; GaN; Leakage current; Schottky barrier; Defects
Source: Web Of Science
Added: August 6, 2018

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