Ayse Merve Ozbek

Planar nearly ideal edge-termination technique for GaN devices

IEEE Electron Device Letters, 32(3), 300–302.

Tunneling coefficient for GaN Schottky barrier diodes

finite-zone argon implant edge termination for high-voltage GaN Schottky rectifiers

IEEE Electron Device Letters, 32(10), 1361–1363.