2011 journal article
Planar nearly ideal edge-termination technique for GaN devices
IEEE Electron Device Letters, 32(3), 300–302.
2011 personal communication
Tunneling coefficient for GaN Schottky barrier diodes
2011 journal article
finite-zone argon implant edge termination for high-voltage GaN Schottky rectifiers
IEEE Electron Device Letters, 32(10), 1361–1363.