2011 journal article

Planar nearly ideal edge-termination technique for GaN devices

IEEE Electron Device Letters, 32(3), 300–302.

By: A. Ozbek & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2011 personal communication

Tunneling coefficient for GaN Schottky barrier diodes

By: A. Ozbek & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

finite-zone argon implant edge termination for high-voltage GaN Schottky rectifiers

IEEE Electron Device Letters, 32(10), 1361–1363.

By: A. Ozbek & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018