Ajit Kanale

College of Engineering

Works (20)

Updated: April 27th, 2024 05:01

2024 journal article

Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 39(3), 2896–2911.

author keywords: 10 kV SiC JBS diodes; 3-level neutral point clamped (3L-NPC); medium-voltage (MV); RC snubber; series-connection; solid state transformers (SSTs); voltage balancing
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 9, 2023

2023 conference paper

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.

By: R. Narwal n, S. Rawat n, A. Kanale n, T. Cheng n, A. Agarwal n, S. Bhattacharya n, B. Baliga n, D. Hopkins n

Contributors: R. Narwal n, S. Rawat n, A. Kanale n, T. Cheng n, A. Agarwal n, S. Bhattacharya n, B. Baliga n, D. Hopkins n

Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Commutation cell; four quadrant switch; SiC Bidirectional FET; BiDFET; characterization; switching loss; dead time; overlap time; commutation scheme; matrix converter
UN Sustainable Development Goal Categories
Sources: Web Of Science, Crossref, NC State University Libraries, ORCID
Added: July 3, 2023

2023 journal article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

IEEE ACCESS, 11, 89277–89289.

By: S. Narasimhan n, A. Kanale*, S. Bhattacharya n & J. Baliga n

author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source (CS); common-drain (CD); current source inverter (CSI); current switch; medium-voltage (MV); reverse-voltage blocking (RVB) switch; wide-bandgap devices; GaN; SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 8, 2023

2023 journal article

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

By: S. Bhattacharya n, R. Narwal n, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n, T. Cheng n

Contributors: S. Bhattacharya n, R. Narwal n, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n, T. Cheng n

author keywords: Motor drives; Silicon carbide; Power supplies; PIN photodiodes; Switches; Packaging; Transformers
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 7, 2023

2023 journal article

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

By: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

Contributors: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

author keywords: Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: March 7, 2023

2022 article proceedings

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

By: A. Kanale n, T. Cheng n, R. Narwal n, A. Agarwal n, B. Baliga n, S. Bhattacharya n, D. Hopkins n

Contributors: A. Kanale n, T. Cheng n, R. Narwal n, A. Agarwal n, B. Baliga n, S. Bhattacharya n, D. Hopkins n

Event: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

author keywords: Bidirectional; Silicon Carbide; Half-Bridge Module; H-Bridge; BiDFET
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries, ORCID
Added: June 15, 2023

2022 journal article

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.

By: A. Kanale n, A. Agarwal n, B. Baliga n & S. Bhattacharya n

author keywords: MOSFET; Silicon carbide; Schottky diodes; Capacitance; Voltage measurement; Logic gates; Capacitance measurement; 4H-SiC; CSI; current switch; monolithic; reverse-blocking
UN Sustainable Development Goal Categories
Sources: Web Of Science, ORCID, NC State University Libraries
Added: May 25, 2022

2021 journal article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.

By: A. Kanale n & B. Baliga n

author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Topology; Switching loss; Switches; Power MOSFET; programmable control; robustness; short-circuit currents; silicon carbide
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: October 19, 2020

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal n, A. Kanale n & B. Baliga n

author keywords: 650 V; 4H-SiC; 10Vgate drive; gate-drain charge; gate oxide; high-frequency figures-of-merit; power MOSFETs; reverse-transfer capacitance; short-circuit withstand time; Si CoolMOS; specific ON-resistance; switching loss
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: December 14, 2020

2021 article

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.

By: A. Kanale n & B. Baliga n

author keywords: BaSIC topology; Silicon Carbide; Power MOSFET; Short-circuit; Robustness
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: September 20, 2021

2021 conference paper

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.

Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021

author keywords: Silicon Carbide; Bidirectional Switch; Switching Performance; Common-Source; Common-Drain
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries, Crossref
Added: May 10, 2022

2021 journal article

Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.

By: A. Kanale n & B. Baliga n

author keywords: MOSFET; Silicon carbide; Silicon; Stress; Logic gates; Topology; Temperature measurement; Baliga Short-Circuit Improvement Concept (BaSIC) topology; depletion-mode MOSFET (DMM); power MOSFET; semiconductor device reliability; short-circuit (SC) currents
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: December 20, 2021

2021 article

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.

By: A. Kanale n & B. Baliga n

author keywords: BaSIC; Short-circuit; Silicon Carbide; Power MOSFET; Parallel; Current Scaling; Composite MOSFETs
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: May 10, 2022

2021 article

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

By: S. Shah n, R. Narwal n, S. Bhattacharya n, A. Kanale n, T. Cheng n, U. Mehrotra n, A. Agarwal n, B. Baliga n, D. Hopkins n

Contributors: S. Shah n, R. Narwal n, S. Bhattacharya n, A. Kanale n, T. Cheng n, U. Mehrotra n, A. Agarwal n, B. Baliga n, D. Hopkins n

author keywords: Bidirectional isolated AC-DC conversion; solar energy; PV grid integration; dual active bridge; AC/DC DAB; SiC bidirectional FET; BiDFET; four quadrant power switch
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries, ORCID
Added: July 5, 2022

2021 article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.

By: S. Narasimhan n, A. Kanale n, S. Bhattacharya n & J. Baliga n

author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source; common-drain; current switch; medium-voltage; reverse-voltage blocking switch; wide-band gap devices; CSI; CS; CD; GaN; SiC
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: May 10, 2022

2021 journal article

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

By: A. Kanale n & B. Baliga n

author keywords: Silicon; MOSFET; Silicon carbide; Logic gates; Topology; Resistance; Inverters; BaSIC; EMM; power MOSFETs; short circuit capability; silicon carbide; topology
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: April 19, 2021

2021 conference paper

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.

By: A. Kanale n, T. Cheng n, S. Shah n, K. Han n, A. Agarwal n, B. Baliga n, D. Hopkins n, S. Bhattacharya n

Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Silicon Carbide; Monolithic; Bidirectional; Four-Quadrant; Integrated; JBS Diode
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: September 4, 2021

2021 journal article

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

By: A. Kanale n & B. Baliga n

author keywords: Power MOSFET; robustness; short-circuit currents; optimization
TL;DR: The theoretical analysis provided in this paper provides valuable design guidelines for manufacturers of Si GSS-DMM devices to achieve optimum performance for use in the BaSIC(DMM) topology. (via Semantic Scholar)
Source: Web Of Science
Added: May 24, 2021

2020 article

Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

By: A. Kanale n & B. Baliga n

author keywords: Gallium Nitride; BaSIC topology; power device; short-circuit; robustness; Sense voltage
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 23, 2021

2020 journal article

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

By: A. Kanale n & B. Baliga n

author keywords: Fault detection; insulated gate bipolar transistor (IGBT); power MOSFET; power semiconductor switches; robustness
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 17, 2020

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