Ajit Kanale
College of Engineering
Works (18)
Updated: September 19th, 2023 05:01
2023 conference paper
Analysis and Characterization of Four-quadrant Switches based Commutation Cell
2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 209–216.
Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
author keywords: Commutation cell; four quadrant switch; SiC Bidirectional FET; BiDFET; characterization; switching loss; dead time; overlap time; commutation scheme; matrix converter
Sources: Web Of Science, Crossref, ORCID
Added: July 3, 2023
2023 journal article
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application
IEEE ACCESS, 11, 89277–89289.
author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source (CS); common-drain (CD); current source inverter (CSI); current switch; medium-voltage (MV); reverse-voltage blocking (RVB) switch; wide-bandgap devices; GaN; SiC
ieeexplore.ieee.org (publisher PDF)
Sources: Web Of Science, ORCID
Added: August 8, 2023
2023 journal article
Power Conversion Systems Enabled by SiC BiDFET Device
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.
author keywords: Motor drives; Silicon carbide; Power supplies; PIN photodiodes; Switches; Packaging; Transformers
Sources: Web Of Science, ORCID
Added: March 7, 2023
2023 journal article
The BiDFET Device and Its Impact on Converters
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.
author keywords: Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters
Sources: Web Of Science, ORCID
Added: March 7, 2023
2022 journal article
Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications
IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.
author keywords: MOSFET; Silicon carbide; Schottky diodes; Capacitance; Voltage measurement; Logic gates; Capacitance measurement; 4H-SiC; CSI; current switch; monolithic; reverse-blocking
Sources: Web Of Science, ORCID
Added: May 25, 2022
2021 journal article
A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.
author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Topology; Switching loss; Switches; Power MOSFET; programmable control; robustness; short-circuit currents; silicon carbide
Source: Web Of Science
Added: October 19, 2020
2021 journal article
Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.
author keywords: 650 V; 4H-SiC; 10Vgate drive; gate-drain charge; gate oxide; high-frequency figures-of-merit; power MOSFETs; reverse-transfer capacitance; short-circuit withstand time; Si CoolMOS; specific ON-resistance; switching loss
Source: Web Of Science
Added: December 14, 2020
2021 article
Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.
author keywords: BaSIC topology; Silicon Carbide; Power MOSFET; Short-circuit; Robustness
Source: Web Of Science
Added: September 20, 2021
2021 conference paper
Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.
Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021
author keywords: Silicon Carbide; Bidirectional Switch; Switching Performance; Common-Source; Common-Drain
Sources: Web Of Science, ORCID, Crossref
Added: May 10, 2022
2021 journal article
Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.
author keywords: MOSFET; Silicon carbide; Silicon; Stress; Logic gates; Topology; Temperature measurement; Baliga Short-Circuit Improvement Concept (BaSIC) topology; depletion-mode MOSFET (DMM); power MOSFET; semiconductor device reliability; short-circuit (SC) currents
Source: Web Of Science
Added: December 20, 2021
2021 article
Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.
author keywords: BaSIC; Short-circuit; Silicon Carbide; Power MOSFET; Parallel; Current Scaling; Composite MOSFETs
Source: Web Of Science
Added: May 10, 2022
2021 article
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.
author keywords: Bidirectional isolated AC-DC conversion; solar energy; PV grid integration; dual active bridge; AC/DC DAB; SiC bidirectional FET; BiDFET; four quadrant power switch
Sources: Web Of Science, ORCID
Added: July 5, 2022
2021 article
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.
author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source; common-drain; current switch; medium-voltage; reverse-voltage blocking switch; wide-band gap devices; CSI; CS; CD; GaN; SiC
Sources: Web Of Science, ORCID
Added: May 10, 2022
2021 journal article
Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.
author keywords: Silicon; MOSFET; Silicon carbide; Logic gates; Topology; Resistance; Inverters; BaSIC; EMM; power MOSFETs; short circuit capability; silicon carbide; topology
Source: Web Of Science
Added: April 19, 2021
2021 conference paper
Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.
Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
author keywords: Silicon Carbide; Monolithic; Bidirectional; Four-Quadrant; Integrated; JBS Diode
Sources: Web Of Science, Crossref, ORCID
Added: September 4, 2021
2021 journal article
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement
IEEE ACCESS, 9, 70039–70047.
author keywords: Power MOSFET; robustness; short-circuit currents; optimization
Source: Web Of Science
Added: May 24, 2021
2020 article
Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
author keywords: Gallium Nitride; BaSIC topology; power device; short-circuit; robustness; Sense voltage
Source: Web Of Science
Added: August 23, 2021
2020 journal article
Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter
IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.
author keywords: Fault detection; insulated gate bipolar transistor (IGBT); power MOSFET; power semiconductor switches; robustness
Source: Web Of Science
Added: August 17, 2020
