Ajit Kanale

College of Engineering

2021 journal article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: October 19, 2020

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal, A. Kanale & B. Baliga

Source: Web Of Science
Added: December 14, 2020

2021 journal article

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: April 19, 2021

2020 journal article

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: August 17, 2020