Ajit Kanale

College of Engineering

Works (14)

2022 journal article

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS.

By: A. Kanale, A. Agarwal, B. Baliga & S. Bhattacharya

Source: Web Of Science
Added: June 13, 2022

2021 journal article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: October 19, 2020

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

By: A. Agarwal, A. Kanale & B. Baliga

Source: Web Of Science
Added: December 14, 2020

2021 article

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: September 20, 2021

2021 article

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA).

Source: Web Of Science
Added: May 10, 2022

2021 journal article

Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: December 20, 2021

2021 article

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA).

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: May 10, 2022

2021 article

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

Source: Web Of Science
Added: July 5, 2022

2021 article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA).

Source: Web Of Science
Added: May 10, 2022

2021 journal article

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: April 19, 2021

2021 article

Switching Characteristics of a 1.2 kV, 50 m Omega SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021).

By: A. Kanale, T. Cheng, S. Shah, K. Han, A. Agarwal, B. Baliga, D. Hopkins, S. Bhattacharya

Source: Web Of Science
Added: September 20, 2021

2021 journal article

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: May 24, 2021

2020 article

Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: August 23, 2021

2020 journal article

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: August 17, 2020