2024 article
Deconvolution of the biexciton structure of monolayer MoSe<sub>2</sub> in spectroscopic ellipsometric data: a comparison of maximum-entropy methods
Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2024, June 18). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 6.
2023 journal article
Noise reduction and peak detection in x-ray diffraction data by linear and nonlinear methods
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 41(4).
2022 article
Classical Model of Surface Enhanced Infrared Absorption (SEIRA) Spectroscopy
Gao, Y., Aspnes, D. E., & Franzen, S. (2022, January 10). JOURNAL OF PHYSICAL CHEMISTRY A, Vol. 1.
2022 journal article
Decoding 'Maximum Entropy' Deconvolution
ENTROPY, 24(9).
2022 article
Detection of the Biexciton of Monolayer WS2 in Ellipsometric Data: A Maximum-Entropy Success
Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022, October 17). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 10.
2022 journal article
Eliminating noise from spectra by linear and nonlinear methods
THIN SOLID FILMS, 761.
2022 journal article
Eliminating white noise in spectra: A generalized maximum-entropy approach
JOURNAL OF APPLIED PHYSICS, 132(7).
2022 article
Reducing or eliminating noise in ellipsometric spectra
Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022, August 4). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 8.
2021 journal article
Maximum-entropy revisited: Optimal filtering of spectra
JOURNAL OF APPLIED PHYSICS, 129(22).
2020 journal article
Classical Correlation Model of Resonance Raman Spectroscopy
JOURNAL OF PHYSICAL CHEMISTRY A, 124(44), 9177–9186.
2020 journal article
Critical Test of the Interaction of Surface Plasmon Resonances with Molecular Vibrational Transitions
JOURNAL OF PHYSICAL CHEMISTRY A, 124(9), 1744–1753.
2020 journal article
External removal of endpoint-discontinuity artifacts in the reciprocal-space analysis of spectra
CURRENT APPLIED PHYSICS, 20(1), 232–236.
2020 journal article
Quantitative assessment of linear noise-reduction filters for spectroscopy
OPTICS EXPRESS, 28(26), 38917–38933.
2019 journal article
Combined interpolation, scale change, and noise reduction in spectral analysis
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5).
2019 journal article
Dielectric Functions and Critical Points of GaAsSb Alloys
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 74(6), 595–599.
2019 journal article
Linear and nonlinear filtering of spectra
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5).
2016 journal article
Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides
APPLIED PHYSICS LETTERS, 109(9).
2015 article
Bond Models in Linear and Nonlinear Optics
ULTRAFAST NONLINEAR IMAGING AND SPECTROSCOPY III, Vol. 9584.
2015 journal article
Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films
SCIENTIFIC REPORTS, 5.
2015 article
Manuel Cardona Castro obituary
Rowe, J., Aspnes, D., Pinczuk, A., & Yu, P. Y. (2015, February). PHYSICS TODAY, Vol. 68, pp. 58–58.
2014 journal article
Dielectric functions and interband transitions of InxAl1 (-) P-x alloys
CURRENT APPLIED PHYSICS, 14(9), 1273–1276.
2014 journal article
Parameterization of the dielectric functions of InGaSb alloys
CURRENT APPLIED PHYSICS, 14(5), 768–771.
2014 article
Spectroscopic ellipsometry - Past, present, and future
Aspnes, D. E. (2014, November 28). THIN SOLID FILMS, Vol. 571, pp. 334–344.
2013 article
Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model
Hwang, S. Y., Kim, T. J., Byun, J. S., Barange, N. S., Diware, M. S., Kim, Y. D., … Song, J. D. (2013, November 29). THIN SOLID FILMS, Vol. 547, pp. 276–279.
2013 article
Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information
Aspnes, D. E., & Choi, S. G. (2014, November 28). THIN SOLID FILMS, Vol. 571, pp. 506–508.
2013 journal article
Interband transitions and dielectric functions of InGaSb alloys
APPLIED PHYSICS LETTERS, 102(10).
2013 journal article
Shallow acceptor complexes in p-type ZnO
APPLIED PHYSICS LETTERS, 102(15).
2013 journal article
Spectroscopic ellipsometry-A perspective
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(5).
2012 journal article
Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60(10), 1685–1689.
2012 journal article
Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(4).
2011 journal article
Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistent GW calculations
PHYSICAL REVIEW B, 83(23).
2011 conference paper
Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry
Presented at the PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors.
Event: PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors
2011 article
Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment
Gokce, B., Gundogdu, K., Adles, E. J., & Aspnes, D. E. (2011, May). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1237–1243.
2011 journal article
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Applied Physics Letters, 98(2), 021904.
2011 journal article
Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si
Applied Physics Letters, 98(12), 121912.
2011 article
Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol. 1399.
2011 article
Plasmonics and effective-medium theories
Aspnes, D. E. (2011, February 28). THIN SOLID FILMS, Vol. 519, pp. 2571–2574.
2011 article
Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry
Ghong, T. H., Han, S.-H., Chung, J.-M., Byun, J. S., Kim, Y. D., & Aspnes, D. E. (2011, May). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1426–1428.
2010 article
Bond models in linear and nonlinear optics
Aspnes, D. E. (2010, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247, pp. 1873–1880.
2010 article
Chemical-etch-assisted growth of epitaxial zinc oxide
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 689–692.
2010 journal article
Dielectric functions and interband transitions of In1-xAlxSb alloys
APPLIED PHYSICS LETTERS, 97(11).
2010 journal article
Ellipsometric study of single-crystal gamma-InSe from 1.5 to 9.2 eV
APPLIED PHYSICS LETTERS, 96(18).
2010 journal article
Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si
Proceedings of the National Academy of Sciences, 107(41), 17503–17508.
2010 journal article
Nondestructive analysis of coated periodic nanostructures from optical data
OPTICS LETTERS, 35(5), 733–735.
2010 journal article
Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 28(4), 583–589.
2009 journal article
Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition
Applied Physics Letters, 94(25), 253112.
2009 journal article
Follow the light: Ellipsometry and polarimetry
PHYSICS TODAY, 62(5), 70–71.
2009 journal article
Interband transitions of InAsxSb1-x alloy films
APPLIED PHYSICS LETTERS, 95(11).
2009 journal article
Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films
OPTICS LETTERS, 34(18), 2867–2869.
2008 article
Analysis of interface layers by spectroscopic ellipsometry
Kim, T. J., Yoon, J. J., Kim, Y. D., Aspnes, D. E., Klein, M. V., Ko, D.-S., … Coleman, J. J. (2008, November 30). APPLIED SURFACE SCIENCE, Vol. 255, pp. 640–642.
2008 journal article
Application of the anisotropic bond model to second-harmonic generation from amorphous media
PHYSICAL REVIEW B, 77(16).
2008 journal article
Dependence of plasmon polaritons on the thickness of indium tin oxide thin films
Journal of Applied Physics, 103(9), 093108.
2008 journal article
Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 884–887.
2008 journal article
Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry
Physica Status Solidi (c), 5(5), 1312–1315.
2008 journal article
Model dielectric functions for AlxGa1-xAs alloys of arbitrary compositions
JOURNAL OF APPLIED PHYSICS, 104(1).
2008 patent
Normal incidence rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2008 journal article
Optical properties of InxAl1-xAs alloy films
APPLIED PHYSICS LETTERS, 92(15).
2008 journal article
Overlayer effects in the critical-point analysis of ellipsometric spectra: Application to InxGa1-xAs alloys
JOURNAL OF APPLIED PHYSICS, 103(7).
2008 journal article
The anisotropic bond model of nonlinear optics
Physica Status Solidi (a), 205(4), 728–731.
2008 journal article
The nearly aligned rotating-monoplate compensator
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 739–742.
2008 journal article
Thickness inhomogenities in the organometallic chemical vapor deposition of GaP
APPLIED PHYSICS LETTERS, 93(20).
2007 journal article
Analytic determination of n, k, and d of an absorbing film from polarimetric data in the thin-film limit
JOURNAL OF APPLIED PHYSICS, 101(3).
2007 journal article
Dielectric functions and electronic structure of InAsxP1-x films on InP
APPLIED PHYSICS LETTERS, 91(4).
2007 journal article
Effect of overlayers on critical-point parameters in the analysis of ellipsometric spectra
APPLIED PHYSICS LETTERS, 91(12).
2007 article
Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)SI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1448–1452.
2007 journal article
Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry
JOURNAL OF APPLIED PHYSICS, 102(6).
2007 patent
Normal incidence rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2006 journal article
Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry
Journal of the Korean Physical Society, 48(6), 1601–1605.
2006 article
Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3
Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595.
2006 journal article
Systematic approach for analyzing reflectance-difference spectra: Application to silicon-dielectric interfaces
APPLIED PHYSICS LETTERS, 88(20).
2006 journal article
Toward n kappa d spectroscopy: Analytic solution of the three-phase model of polarimetry in the thin-film limit
APPLIED PHYSICS LETTERS, 88(20).
2005 article
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra
MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.
2005 journal article
Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV
JOURNAL OF APPLIED PHYSICS, 98(10).
2005 journal article
Dipole-radiation model for terahertz radiation from semiconductors
APPLIED PHYSICS LETTERS, 86(21).
2005 article
Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 23, pp. 1149–1153.
2005 review
Real-time diagnostics for metalorganic vapor phase epitaxy
[Review of ]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 242(13), 2551–2560.
2005 journal article
Relative bulk and interface contributions to optical second-harmonic generation in silicon
PHYSICAL REVIEW B, 72(20).
2004 article
Biplate artifacts in rotating-compensator ellipsometers
Ebert, K., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 779–783.
2004 patent
Broadband spectroscopic rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2004 journal article
Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model
PHYSICAL REVIEW B, 70(16).
2004 article
Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system
Mori, T., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 33–38.
2004 article
Expanding horizons: new developments in ellipsometry and polarimetry
Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 3–13.
2004 article
Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition
Flock, K., Kim, S. J., Asar, M., Kim, I. K., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 639–644.
2004 article
Optical anisotropy relevant to rotating-compensator polarimeters: application to the monoplate retarder
Asar, M., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 50–53.
2004 journal article
Optical properties of Cd1-xMgxTe (x=0.00, 0.23, 0.31, and 0.43) alloy films
APPLIED PHYSICS LETTERS, 84(5), 693–695.
2004 journal article
Optimizing precision of rotating-analyzer and rotating-compensator-ellipsometers
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 21(3), 403–410.
2004 article
Parametric modeling of the dielectric functions of Cd1-xMgxTe alloy films
Ihn, Y. S., Kim, T. J., Ghong, T. H., Kim, Y. D., Aspnes, D. E., & Kossut, J. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 222–227.
2004 article
Real-time characterization of GaSb homo- and heteroepitaxy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2233–2239.
2004 journal article
Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system
APPLIED PHYSICS LETTERS, 85(6), 946–948.
2003 article
Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1798–1803.
2003 patent
Broadband spectroscopic rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2003 journal article
Dielectric functions of Cd1-xMgxTe alloy films by uusing spectroscopic ellipsometry
Journal of the Korean Physical Society, 43(4), 634–637.
2003 journal article
Dielectric functions of InxGa1-xAs alloys
PHYSICAL REVIEW B, 68(11).
2003 journal article
Optical properties of InGaAs alloy films in the E-2 region by spectroscopic ellipsometry
Journal of the Korean Physical Society, 42(2003 Feb), S242–245.
2003 article
Simplified bond-hyperpolarizability model of second- and fourth-harmonic generation: application to Si-SiO2 interfaces
Aspnes, D. E., Hansen, J. K., Peng, H. J., Powell, G. D., & Wang, J. F. T. (2003, December). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 240, pp. 509–517.
2003 journal article
Study of the dielectric function of ZnS by spectroscopic ellipsometry
Journal of the Korean Physical Society, 42(2003 Feb), S238–241.
2002 patent
Broadband spectroscopic rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2002 journal article
Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV
APPLIED PHYSICS LETTERS, 81(4), 628–630.
2002 journal article
Pseudodielectric functions of InGaAs alloy films grown on InP
APPLIED PHYSICS LETTERS, 81(13), 2367–2369.
2002 journal article
Simplified bond-hyperpolarizability model of second harmonic generation
PHYSICAL REVIEW B, 65(20).
2002 article
Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705.
2002 patent
Thin film optical measurement system and method with calibrating ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2001 journal article
Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy
Journal of the Korean Physical Society, 39(3), 462–465.
2001 patent
Broadband spectroscopic rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2001 journal article
Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space
JOURNAL OF APPLIED PHYSICS, 89(12), 8183–8192.
2001 patent
Ellipsometer and polarimeter with zero-order plate compensator
Washington, DC: U.S. Patent and Trademark Office.
2001 journal article
Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 184(1), 79–87.
2001 journal article
Investigation of noise in a spectrometer system using a short-arc source
REVIEW OF SCIENTIFIC INSTRUMENTS, 72(8), 3477–3479.
2001 article
Linear and nonlinear optical spectroscopy of surfaces and interfaces
Aspnes, D. E. (2001, December 16). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 188, pp. 1353–1360.
2001 journal article
Nondestructive measurement of a glass transition temperature at spin-cast semicrystalline polymer surfaces
MACROMOLECULES, 34(8), 2395–2397.
2001 journal article
Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV
APPLIED PHYSICS LETTERS, 78(18), 2715–2717.
2001 journal article
Spectroscopic ellipsometric study of the dielectric function of ZnSe and its overlayer
Journal of the Korean Physical Society, 39(2001 Dec), S372–375.
2001 journal article
Spectroscopic ellipsometry study of InGaAs alloy films grown on InP
Journal of the Korean Physical Society, 39(2001 Dec), S389–392.
2001 patent
Thin film optical measurement system and method with calibrating ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2000 patent
Broadband spectroscopic rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
2000 article
Characterization of Al(x)Ga(1-x)N-compound layers by reflectance difference spectroscopy
Rossow, U., & Aspnes, D. E. (2000, January). PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol. 177, pp. 157–163.
2000 article
Coherence effects and time dependences of the optical response of surfaces and interfaces of optically absorbing materials
Aspnes, D. E., Mantese, L., Bell, K. A., & Rossow, U. (2000, July). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 709–715.
2000 journal article
Dielectric function and bowing parameter of Zn1-xMgxSe and Zn1-xBexSe alloys
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 37(6), 1012–1016.
2000 journal article
Dielectric function of epitaxial ZnSe films
APPLIED PHYSICS LETTERS, 77(21), 3364–3366.
2000 journal article
Effect of Ar+ ion beam in the process of plasma surface modification of PET films
JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683.
2000 article
High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si
Yoo, S. D., Aspnes, D. E., Lastras-Martinez, L. F., Ruf, T., Konuma, M., & Cardona, M. (2000, July). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 117–125.
2000 article
In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy
Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 22–27.
2000 journal article
Isotopic effects on the dielectric response of Si around the E-1 gap
PHYSICAL REVIEW B, 61(19), 12946–12951.
2000 patent
Method of reducing noise generated by arc lamps in optical systems employing slits
Washington, DC: U.S. Patent and Trademark Office.
2000 article
Optical characterization of wide bandgap semiconductors
Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 98–106.
2000 journal article
Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys
JOURNAL OF APPLIED PHYSICS, 87(3), 1287–1290.
2000 article
Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036.
2000 journal article
Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry
SURFACE SCIENCE, 464(1), L703–L707.
2000 article
Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1184–1189.
2000 article
Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor
Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, January). JOURNAL OF ELECTRONIC MATERIALS, Vol. 29, pp. 106–111.
2000 article
Surface-induced optical anisotropy of Si and Ge
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2229–2231.
2000 journal article
Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys
JOURNAL OF APPLIED PHYSICS, 88(2), 878–882.
1999 article
Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 17, pp. 1652–1656.
1999 patent
Broadband spectroscopic rotating compensator ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
1999 article
Comment on "Ab initio calculation of excitonic effects in the optical spectra of semiconductors"
Cardona, M., Lastras-Martinez, L. F., & Aspnes, D. E. (1999, November 8). PHYSICAL REVIEW LETTERS, Vol. 83, pp. 3970–3970.
1999 journal article
Dielectric function of Cd0.57Mg0.43Te alloy film studied by ellipsometry
Journal of the Korean Physical Society, 34(1999 June), S496–498.
1999 article
High-resolution spectroscopy with reciprocal-space analysis
Aspnes, D. E., & Yoo, S. D. (1999, September). PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 215, pp. 715–723.
1999 journal article
Photon-induced localization in optically absorbing materials
PHYSICS LETTERS A, 253(1-2), 93–97.
1999 journal article
Proximal electromagnetic shear forces
Journal of Microscopy, 196(1), 59–60.
1999 journal article
Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).
1999 patent
Thin film optical measurement system and method with calibrating ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
1998 article
Analysis of optical spectra by Fourier methods
Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 143–148.
1998 article
Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 16, pp. 1654–1657.
1998 article
Analytic representations of the dielectric functions of materials for device and structural modeling
Leng, J., Opsal, J., Chu, H., Senko, M., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 132–136.
1998 article
Broadband spectral operation of a rotating-compensator ellipsometer
Opsal, J., Fanton, J., Chen, J., Leng, J., Wei, L., Uhrich, C., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 58–61.
1998 article
Interpretation of critical point energy shifts in crystalline Si by near-surface localization of excited electronic states
Mantese, L., Bell, K. A., Rossow, U., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 557–560.
1998 article
Lineshapes of surface induced optical anisotropy spectra measured by RDS/RAS
Rossow, U., Mantese, L., & Aspnes, D. E. (1998, January). APPLIED SURFACE SCIENCE, Vol. 123, pp. 237–242.
1998 journal article
Many-body and correlation effects in surface and interface spectra of optically absorbing materials
Physica Status Solidi. A, Applications and Materials Science, 170(2), 199–210.
1998 article
Optical approaches for controlling epitaxial growth
Aspnes, D. E., & Dietz, N. (1998, June). APPLIED SURFACE SCIENCE, Vol. 130, pp. 367–376.
1998 article
Optical characterization of GaAs/AlAs short period superlattices
Woo, D. H., Han, I. K., Choi, W. J., Lee, S., Kim, H. J., Lee, J. I., … Woo, J. C. (1998, August). MICROELECTRONIC ENGINEERING, Vol. 43-4, pp. 265–270.
1998 article
Photon-induced localization and final-state correlation effects in optically absorbing materials
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2367–2372.
1998 article
Reflectance difference spectroscopy spectra of clean (3 x 2), (2 x 1), and c(2 x 2) 3C-SiC(001) surfaces: New evidence for surface state contributions to optical anisotropy spectra
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2355–2357.
1998 article
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.
1998 article
Systematic differences among nominal reference dielectric function spectra for crystalline Si as determined by spectroscopic ellipsometry
Bell, K. A., Mantese, L., Rossow, U., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 161–166.
1998 patent
Thin film optical measurement system and method with calibrating ellipsometer
Washington, DC: U.S. Patent and Trademark Office.
1998 journal article
Trends in residual stress for GaN/AlN/6H-SiC heterostructures
APPLIED PHYSICS LETTERS, 73(19), 2808–2810.
1997 journal article
Above bandgap dielectric function of epitaxial ZnSe layers
Journal of the Korean Physical Society, 31(4), L553–555.
1997 journal article
Ellipsometric studies of Cd1-xMgxTe (0<=x<=0.5) alloys
APPLIED PHYSICS LETTERS, 71(2), 249–251.
1997 article
Evidence of near-surface localization of excited electronic states in crystalline Si
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1196–1200.
1997 article
Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates
Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201.
1997 conference paper
Low pH chemical etch route for smooth H-terminated Si(100) and study of subsequent chemical stability
Environmental, safety, and health issues in IC production: Symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 447), 191–196. Pittsburgh, PA: Materials Research Society.
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
1997 journal article
Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity
SOLID STATE COMMUNICATIONS, 101(2), 85–92.
1997 journal article
Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.
1997 journal article
Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs
APPLIED PHYSICS LETTERS, 70(5), 610–612.
1997 journal article
Spectroscopic ellipsometric study of Zn(1-x)Mn(x)Te films grown on GaAs
Journal of the Korean Physical Society, 31(1), 202–205.
1997 journal article
Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al(0.5)Ga(0.5)As alloy
Journal of the Korean Physical Society, 30(suppl.), 108–112.
1997 article
Surface and interface effects on ellipsometric spectra of crystalline Si
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 15, pp. 1205–1211.
1997 journal article
Variation of GaN valence bands with biaxial stress and quantification of residual stress
APPLIED PHYSICS LETTERS, 70(15), 2001–2003.
1996 conference paper
In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency
III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.
1996 conference paper
Multilevel approaches toward monitoring and control of semiconductor epitaxy
Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448), 451–462.
1996 conference paper
Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters
III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.
1994 patent
Extraction of spatially varying dielectric function from ellipsometric data
Washington, DC: U.S. Patent and Trademark Office.
1993 journal article
Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements
Journal of the Optical Society of America A, 10(5), 974.
1992 patent
Ellipsometric control of material growth
Washington, DC: U.S. Patent and Trademark Office.
1992 journal article
Growth of AlxGa1−xAs parabolic quantum wells by real‐time feedback control of composition
Applied Physics Letters, 60(10), 1244–1246.
1990 patent
Optical control of deposition of crystal monolayers
Washington, DC: U.S. Patent and Trademark Office.
1985 patent
Cylindrical grating monochromator for synchrotron radiation
Washington, DC: U.S. Patent and Trademark Office.
1983 journal article
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
Physical Review B, 27(2), 985–1009.
1983 patent
Method of preparing semiconductor surfaces
Washington, DC: U.S. Patent and Trademark Office.
1982 journal article
Local‐field effects and effective‐medium theory: A microscopic perspective
American Journal of Physics, 50(8), 704–709.
1982 patent
Method for optical monitoring in materials fabrication
Washington, DC: U.S. Patent and Trademark Office.
1982 patent
Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
Washington, DC: U.S. Patent and Trademark Office.
1982 journal article
Optical properties of thin films
Thin Solid Films, 89(3), 249–262.
1976 patent
Measurement of thin films by polarized light
Washington, DC: U.S. Patent and Trademark Office.
1975 journal article
High Precision Scanning Ellipsometer
Applied Optics, 14(1), 220.
1966 journal article
Electric-Field Effects on Optical Absorption near Thresholds in Solids
Physical Review, 147(2), 554–566.
Updated: July 2nd, 2019 17:28
1992 - present
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