David E Aspnes

The case for denoising/smoothing X-ray photoelectron spectroscopy data by Fourier analysis

Journal of Vacuum Science & Technology A.

Deconvolution of the biexciton structure of monolayer MoSe₂ in spectroscopic ellipsometric data: a comparison of maximum-entropy methods

Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2024, June 18). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 6.

Noise reduction and peak detection in x-ray diffraction data by linear and nonlinear methods

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 41(4).

Classical Model of Surface Enhanced Infrared Absorption (SEIRA) Spectroscopy

Gao, Y., Aspnes, D. E., & Franzen, S. (2022, January 10). JOURNAL OF PHYSICAL CHEMISTRY A, Vol. 1.

Decoding 'Maximum Entropy' Deconvolution

ENTROPY, 24(9).

Detection of the Biexciton of Monolayer WS2 in Ellipsometric Data: A Maximum-Entropy Success

Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022, October 17). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 10.

Eliminating noise from spectra by linear and nonlinear methods

THIN SOLID FILMS, 761.

Eliminating white noise in spectra: A generalized maximum-entropy approach

JOURNAL OF APPLIED PHYSICS, 132(7).

Reducing or eliminating noise in ellipsometric spectra

Le, L. V., Kim, T. J., Kim, Y. D., & Aspnes, D. E. (2022, August 4). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 8.

Maximum-entropy revisited: Optimal filtering of spectra

JOURNAL OF APPLIED PHYSICS, 129(22).

Classical Correlation Model of Resonance Raman Spectroscopy

JOURNAL OF PHYSICAL CHEMISTRY A, 124(44), 9177–9186.

Critical Test of the Interaction of Surface Plasmon Resonances with Molecular Vibrational Transitions

JOURNAL OF PHYSICAL CHEMISTRY A, 124(9), 1744–1753.

External removal of endpoint-discontinuity artifacts in the reciprocal-space analysis of spectra

CURRENT APPLIED PHYSICS, 20(1), 232–236.

Quantitative assessment of linear noise-reduction filters for spectroscopy

OPTICS EXPRESS, 28(26), 38917–38933.

Combined interpolation, scale change, and noise reduction in spectral analysis

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5).

Dielectric Functions and Critical Points of GaAsSb Alloys

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 74(6), 595–599.

Linear and nonlinear filtering of spectra

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 37(5).

Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

APPLIED PHYSICS LETTERS, 109(9).

Bond Models in Linear and Nonlinear Optics

ULTRAFAST NONLINEAR IMAGING AND SPECTROSCOPY III, Vol. 9584.

Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films

SCIENTIFIC REPORTS, 5.

Manuel Cardona Castro obituary

Rowe, J., Aspnes, D., Pinczuk, A., & Yu, P. Y. (2015, February). PHYSICS TODAY, Vol. 68, pp. 58–58.

Combined direct- and reciprocal-space approach for converting spectra to energy scales with negligible loss of information

Aspnes, D. E., & Choi, S. G. (2014, November 28). THIN SOLID FILMS, Vol. 571, pp. 506–508.

Dielectric functions and interband transitions of InxAl1 (-) P-x alloys

CURRENT APPLIED PHYSICS, 14(9), 1273–1276.

Parameterization of the dielectric functions of InGaSb alloys

CURRENT APPLIED PHYSICS, 14(5), 768–771.

Spectroscopic ellipsometry - Past, present, and future

Aspnes, D. E. (2014, November 28). THIN SOLID FILMS, Vol. 571, pp. 334–344.

Analytic representation of the dielectric functions of InAsxSb1-x alloys in the parametric model

Hwang, S. Y., Kim, T. J., Byun, J. S., Barange, N. S., Diware, M. S., Kim, Y. D., … Song, J. D. (2013, November 29). THIN SOLID FILMS, Vol. 547, pp. 276–279.

Interband transitions and dielectric functions of InGaSb alloys

APPLIED PHYSICS LETTERS, 102(10).

Shallow acceptor complexes in p-type ZnO

APPLIED PHYSICS LETTERS, 102(15).

Spectroscopic ellipsometry-A perspective

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 31(5).

Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60(10), 1685–1689.

Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(4).

Above-band-gap dielectric functions of ZnGeAs2: Ellipsometric measurements and quasiparticle self-consistent GW calculations

PHYSICAL REVIEW B, 83(23).

Analysis of surface roughness of critical-dimension structures using spectroscopic ellipsometry

Presented at the PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors.

Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment

Gokce, B., Gundogdu, K., Adles, E. J., & Aspnes, D. E. (2011, May). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1237–1243.

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Applied Physics Letters, 98(2), 021904.

Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

Applied Physics Letters, 98(12), 121912.

Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol. 1399.

Plasmonics and effective-medium theories

Aspnes, D. E. (2011, February 28). THIN SOLID FILMS, Vol. 519, pp. 2571–2574.

Roughness Analysis of the Critical Dimension by Using Spectroscopic Ellipsometry

Ghong, T. H., Han, S.-H., Chung, J.-M., Byun, J. S., Kim, Y. D., & Aspnes, D. E. (2011, May). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1426–1428.

Bond models in linear and nonlinear optics

Aspnes, D. E. (2010, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 247, pp. 1873–1880.

Chemical-etch-assisted growth of epitaxial zinc oxide

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 689–692.

Dielectric functions and interband transitions of In1-xAlxSb alloys

APPLIED PHYSICS LETTERS, 97(11).

Ellipsometric study of single-crystal gamma-InSe from 1.5 to 9.2 eV

APPLIED PHYSICS LETTERS, 96(18).

Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

Proceedings of the National Academy of Sciences, 107(41), 17503–17508.

Nondestructive analysis of coated periodic nanostructures from optical data

OPTICS LETTERS, 35(5), 733–735.

Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 28(4), 583–589.

Analytical solution of thickness variations in selective area growth by organometallic chemical vapor deposition

Applied Physics Letters, 94(25), 253112.

Follow the light: Ellipsometry and polarimetry

PHYSICS TODAY, 62(5), 70–71.

Interband transitions of InAsxSb1-x alloy films

APPLIED PHYSICS LETTERS, 95(11).

Plasmonic phenomena in indium tin oxide and ITO-Au hybrid films

OPTICS LETTERS, 34(18), 2867–2869.

Analysis of interface layers by spectroscopic ellipsometry

Kim, T. J., Yoon, J. J., Kim, Y. D., Aspnes, D. E., Klein, M. V., Ko, D.-S., … Coleman, J. J. (2008, November 30). APPLIED SURFACE SCIENCE, Vol. 255, pp. 640–642.

Application of the anisotropic bond model to second-harmonic generation from amorphous media

PHYSICAL REVIEW B, 77(16).

Dependence of plasmon polaritons on the thickness of indium tin oxide thin films

Journal of Applied Physics, 103(9), 093108.

Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 884–887.

Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real-time spectroscopic polarimetry

Physica Status Solidi (c), 5(5), 1312–1315.

Model dielectric functions for AlxGa1-xAs alloys of arbitrary compositions

JOURNAL OF APPLIED PHYSICS, 104(1).

Normal incidence rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Optical properties of InxAl1-xAs alloy films

APPLIED PHYSICS LETTERS, 92(15).

Overlayer effects in the critical-point analysis of ellipsometric spectra: Application to InxGa1-xAs alloys

JOURNAL OF APPLIED PHYSICS, 103(7).

The anisotropic bond model of nonlinear optics

Physica Status Solidi (a), 205(4), 728–731.

The nearly aligned rotating-monoplate compensator

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 739–742.

Thickness inhomogenities in the organometallic chemical vapor deposition of GaP

APPLIED PHYSICS LETTERS, 93(20).

Analytic determination of n, k, and d of an absorbing film from polarimetric data in the thin-film limit

JOURNAL OF APPLIED PHYSICS, 101(3).

Dielectric functions and electronic structure of InAsxP1-x films on InP

APPLIED PHYSICS LETTERS, 91(4).

Effect of overlayers on critical-point parameters in the analysis of ellipsometric spectra

APPLIED PHYSICS LETTERS, 91(12).

Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)SI

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 25, pp. 1448–1452.

Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry

JOURNAL OF APPLIED PHYSICS, 102(6).

Normal incidence rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry

Journal of the Korean Physical Society, 48(6), 1601–1605.

Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3

Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luening, J. (2006, November). RADIATION PHYSICS AND CHEMISTRY, Vol. 75, pp. 1591–1595.

Systematic approach for analyzing reflectance-difference spectra: Application to silicon-dielectric interfaces

APPLIED PHYSICS LETTERS, 88(20).

Toward n kappa d spectroscopy: Analytic solution of the three-phase model of polarimetry in the thin-film limit

APPLIED PHYSICS LETTERS, 88(20).

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.

Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV

JOURNAL OF APPLIED PHYSICS, 98(10).

Dipole-radiation model for terahertz radiation from semiconductors

APPLIED PHYSICS LETTERS, 86(21).

Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 23, pp. 1149–1153.

Real-time diagnostics for metalorganic vapor phase epitaxy

[Review of ]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 242(13), 2551–2560.

Relative bulk and interface contributions to optical second-harmonic generation in silicon

PHYSICAL REVIEW B, 72(20).

Biplate artifacts in rotating-compensator ellipsometers

Ebert, K., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 779–783.

Broadband spectroscopic rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Calculation of bulk third-harmonic generation from crystalline Si with the simplified bond hyperpolarizability model

PHYSICAL REVIEW B, 70(16).

Comparison of the capabilities of rotating-analyzer and rotating-compensator ellipsometers by measurements on a single system

Mori, T., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 33–38.

Expanding horizons: new developments in ellipsometry and polarimetry

Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 3–13.

Integrated rotating-compensator polarimeter for real-time measurements and analysis of organometallic chemical vapor deposition

Flock, K., Kim, S. J., Asar, M., Kim, I. K., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 639–644.

Optical anisotropy relevant to rotating-compensator polarimeters: application to the monoplate retarder

Asar, M., & Aspnes, D. E. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 50–53.

Optical properties of Cd1-xMgxTe (x=0.00, 0.23, 0.31, and 0.43) alloy films

APPLIED PHYSICS LETTERS, 84(5), 693–695.

Optimizing precision of rotating-analyzer and rotating-compensator-ellipsometers

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 21(3), 403–410.

Parametric modeling of the dielectric functions of Cd1-xMgxTe alloy films

Ihn, Y. S., Kim, T. J., Ghong, T. H., Kim, Y. D., Aspnes, D. E., & Kossut, J. (2004, May 1). THIN SOLID FILMS, Vol. 455, pp. 222–227.

Real-time characterization of GaSb homo- and heteroepitaxy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2233–2239.

Spectroscopic ellipsometric analysis of interfaces: Comparison of alloy and effective-medium-approximation approaches to a CdMgTe multilayer system

APPLIED PHYSICS LETTERS, 85(6), 946–948.

Application of the simplified bond-hyperpolarizability model to fourth-harmonic generation

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1798–1803.

Broadband spectroscopic rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Dielectric functions of Cd1-xMgxTe alloy films by uusing spectroscopic ellipsometry

Journal of the Korean Physical Society, 43(4), 634–637.

Dielectric functions of InxGa1-xAs alloys

PHYSICAL REVIEW B, 68(11).

Optical properties of InGaAs alloy films in the E-2 region by spectroscopic ellipsometry

Journal of the Korean Physical Society, 42(2003 Feb), S242–245.

Simplified bond-hyperpolarizability model of second- and fourth-harmonic generation: application to Si-SiO2 interfaces

Aspnes, D. E., Hansen, J. K., Peng, H. J., Powell, G. D., & Wang, J. F. T. (2003, December). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 240, pp. 509–517.

Study of the dielectric function of ZnS by spectroscopic ellipsometry

Journal of the Korean Physical Society, 42(2003 Feb), S238–241.

Broadband spectroscopic rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV

APPLIED PHYSICS LETTERS, 81(4), 628–630.

Pseudodielectric functions of InGaAs alloy films grown on InP

APPLIED PHYSICS LETTERS, 81(13), 2367–2369.

Simplified bond-hyperpolarizability model of second harmonic generation

PHYSICAL REVIEW B, 65(20).

Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 1699–1705.

Thin film optical measurement system and method with calibrating ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Above bandgap optical properties of ZnS and ZnS1-xTex alloys grown by using hot-wall epitaxy

Journal of the Korean Physical Society, 39(3), 462–465.

Broadband spectroscopic rotating compensator ellipsometer

Washington, DC: U.S. Patent and Trademark Office.

Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space

JOURNAL OF APPLIED PHYSICS, 89(12), 8183–8192.

Ellipsometer and polarimeter with zero-order plate compensator

Washington, DC: U.S. Patent and Trademark Office.

Investigation and control of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 184(1), 79–87.

Investigation of noise in a spectrometer system using a short-arc source

REVIEW OF SCIENTIFIC INSTRUMENTS, 72(8), 3477–3479.

Linear and nonlinear optical spectroscopy of surfaces and interfaces