Works (109)

Updated: March 2nd, 2024 10:08

2022 journal article

Improved LED output power and external quantum efficiency using InGaN templates

APPLIED PHYSICS LETTERS, 120(8).

By: M. Abdelhamid n, E. Routh n, B. Hagar n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 4, 2022

2022 journal article

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

By: B. Hagar n, M. Abdelhamid n, E. Routh n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2022

2021 journal article

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

By: E. Routh n, M. Abdelhamid n, P. Colter n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: February 21, 2022

2021 journal article

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

SUPERLATTICES AND MICROSTRUCTURES, 160.

By: M. Abdelhamid n, E. Routh n, A. Shaker n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Green LEDs; Relaxed InGaN templates; MOCVD; InGaN quantum wells
Sources: Web Of Science, ORCID
Added: November 15, 2021

2021 journal article

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3).

By: M. Abdelhamid*, E. Routh* & S. Bedair*

author keywords: InGaN; multiple quantum wells; MOCVD
Sources: Web Of Science, ORCID
Added: March 8, 2021

2021 journal article

Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon

JOM, 73(1), 293–298.

By: K. Khafagy n, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
Source: Web Of Science
Added: November 9, 2020

2020 journal article

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).

By: E. Routh n, M. Abdelhamid n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: September 7, 2020

2020 article

Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates

TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064.

By: K. Khafagy n, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
author keywords: Threading dislocations; III-Nitride relaxation; V-pits defects; Thermodynamics modeling
Source: Web Of Science
Added: August 23, 2021

2020 journal article

Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 215.

By: B. Hagar n, I. Sayed n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Solar cells; Intermetallic bonding; Wafer bonding technology; Mechanical stacking
Source: Web Of Science
Added: October 26, 2020

2020 journal article

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

By: T. Eldred n, M. Abdelhamid n, J. Reynolds n, N. El-Masry n, J. LeBeau n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: April 6, 2020

2019 journal article

Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 242, 104–110.

By: S. Salah*, T. Hatem*, E. Khalil* & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
author keywords: Embedded void approach; Crystal plasticity; Finite element method; GaN-on-Si technology
Source: Web Of Science
Added: May 13, 2019

2019 journal article

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

By: M. Abdelhamid n, J. Reynolds n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: InGaN relaxation; Metal Organic Chemical Vapor Deposition (MOCVD); InGaN semibulk; Multiple quantum wells (MQWs); High resolution X-ray diffraction (HRXRD); Nitrides
Source: Web Of Science
Added: June 24, 2019

2019 journal article

Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities

MRS ADVANCES, 4(13), 755–760.

By: K. Khafagy*, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
Source: Web Of Science
Added: May 20, 2019

2019 journal article

Quantum Well Solar Cells: Principles, Recent Progress, and Potential

IEEE JOURNAL OF PHOTOVOLTAICS, 9(2), 402–423.

By: I. Sayed n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: III-V; bandgap engineering; GaAs; GaN; InGaAsP; InGaP; multi-junction solar cells; quantum wells (QWs); solar cells
Source: Web Of Science
Added: March 11, 2019

2018 journal article

Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch

APPLIED PHYSICS LETTERS, 112(4).

By: K. Khafagy*, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2018 article

Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic

ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, pp. 453–461.

By: K. Khafagy*, T. Hatem* & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
author keywords: Crystal plasticity; Solar cells; Multi-junction photovoltaic
Source: Web Of Science
Added: January 14, 2019

2018 review

Tunnel Junctions for III-V Multijunction Solar Cells Review

[Review of ]. CRYSTALS, 8(12).

By: P. Colter n, B. Hagar n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: tunnel junction; solar cell; efficiency
Source: Web Of Science
Added: January 21, 2019

2017 journal article

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

APPLIED PHYSICS LETTERS, 111(8).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2017 journal article

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

By: N. El-Masry n, J. Zavada n, J. Reynolds n, C. Reynolds n, Z. Liu n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

2016 conference paper

Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2)

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2320–2322.

By: S. Bedair n, J. Harmon n, C. Carlin n, I. Sayed n & P. Colter n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: experimental and modeling results

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2366–2370.

By: I. Sayed n, B. Hagar n, C. Carlin n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2016 article

High Performance Tunnel Junction with Resistance to Thermal Annealing

12TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-12), Vol. 1766.

By: S. Bedair n, C. Carlin n, J. Harmon n, I. Sayed n & P. Colter n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2016 journal article

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

APPLIED PHYSICS LETTERS, 108(20).

By: S. Bedair n, J. Harmon n, C. Carlin n, I. Sayed n & P. Colter n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2016 conference paper

InGaP-based quantum well solar cells

2016 ieee 43rd photovoltaic specialists conference (pvsc), 147–150.

By: I. Sayed n, B. Hagar n, C. Carlin n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

JOURNAL OF APPLIED PHYSICS, 119(9).

By: I. Hashem n, C. Carlin n, B. Hagar n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2016 journal article

Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65-1.82 eV)

IEEE JOURNAL OF PHOTOVOLTAICS, 6(4), 997–1003.

By: I. Sayed n, C. Carlin n, B. Hagar n, P. Colter n & S. Bedair n

co-author countries: Egypt 🇪🇬 United States of America 🇺🇸
author keywords: GaAs; GaInP; multijunction solar cells (MJSCs); quantum wells (QWs); III-V semiconductors
Source: Web Of Science
Added: August 6, 2018

2015 journal article

Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications

JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166.

By: D. Van Den Broeck n, D. Bharrat n, Z. Liu n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: InGaN; metal organic chemical vapor deposition (MOCVD); relaxation; semibulk
Source: Web Of Science
Added: August 6, 2018

2015 conference paper

Tunable GaInP solar cell lattice matched to GaAs

2015 ieee 42nd photovoltaic specialist conference (pvsc).

By: I. Sayed n, C. Carlin n, B. Hagar n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells

IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619.

By: G. Bradshaw n, J. Samberg n, C. Carlin n, P. Colter n, K. Edmondson*, W. Hong*, C. Fetzer*, N. Karam*, S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: InGaAs/GaAsP multiple quantum wells; multijunction solar cell; tunneling; III-V tandem solar cells
Source: Web Of Science
Added: August 6, 2018

2014 chapter

Molecular Interactions on InxGa1−xN

In G. Shaw III, B. Prorok, L. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114).

By: L. Bain n, A. Hosalli n, S. Bedair n, T. Paskova n & A. Ivanisevic n

co-author countries: United States of America 🇺🇸

Ed(s): G. Shaw, B. Prorok, L. Starman & C. Furlong

Event: Annual Conference on Experimental and Applied Mechanics at Lombard, IL on June 3-5, 2013

Source: Crossref
Added: November 7, 2020

2014 journal article

Strain-balanced InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS, 105(3).

By: D. Broeck n, D. Bharrat n, A. Hosalli n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces

ACS Applied Materials & Interfaces, 5(15), 7236–7243.

By: L. Bain n, S. Jewett*, A. Mukund, S. Bedair*, T. Paskova* & A. Ivanisevic*

co-author countries: United States of America 🇺🇸
author keywords: III-V semiconductor; indium gallium nitride; X-ray photoelectron spectroscopy; surface gradient; amino acid; atomic force microscopy
MeSH headings : Adsorption; Amino Acids / chemistry; Arginine / chemistry; Biocompatible Materials / chemistry; Gallium / chemistry; Humans; Indium / chemistry; Microscopy, Atomic Force / methods; Oxides / chemistry; Photochemistry / methods; Photoelectron Spectroscopy / methods; Semiconductors; Spectrophotometry, Ultraviolet / methods; Spectroscopy, Near-Infrared / methods; Static Electricity; Surface Properties
Sources: Crossref, Web Of Science
Added: August 6, 2018

2013 journal article

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

By: G. Bradshaw n, C. Carlin n, J. Samberg n, N. El-Masry n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: III-V multijunction solar cells; multiple quantum wells; thermionic emission; tunneling
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements

2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267.

By: G. Bradshaw n, C. Carlin n, J. Samberg n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

APPLIED PHYSICS LETTERS, 103(10).

By: J. Samberg n, C. Carlin n, G. Bradshaw n, P. Colter n, J. Harmon n, J. Allen n, J. Hauser n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Gallium nitride nanowires by maskless hot phosphoric wet etching

APPLIED PHYSICS LETTERS, 103(8).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%)

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917.

By: J. Samberg n, C. Carlin n, G. Bradshaw n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Superlattice; strain-balanced; tunneling; InGaAs; GaAsP; photovoltaic
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

By: J. Samberg n, H. Alipour n, G. Bradshaw n, C. Carlin n, P. Colter n, J. LeBeau n, N. El-Masry n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

By: A. Hosalli n, D. Van Den Broeck n, D. Bharrat n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

2013 journal article

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536.

By: C. Carlin n, G. Bradshaw n, J. Samberg n, P. Colter n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Indium Gallium Arsenide; quantum wells; tunneling
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier

2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085.

By: J. Hauser n, Z. Carlin n, J. Harmon n, G. Bradshaw n, J. Samberg n, P. Colter n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

By: P. Frajtag n, N. Nepal n, T. Paskova n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: Crystal structure; Metalorganic vapor phase epitaxy; InGaN; Nitrides
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

APPLIED PHYSICS LETTERS, 103(18).

By: A. Roberts*, A. Mohanta*, H. Everitt*, J. Leach*, D. Broeck n, A. Hosalli n, T. Paskova n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

By: J. Samberg n, G. Bradshaw n, C. Carlin n, P. Colter n, K. Edmondson, W. Hong, C. Fetzer, N. Karam, N. El-Masry n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2012 article

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

By: P. Frajtag n, A. Hosalli n, J. Samberg n, P. Colter n, T. Paskova n, N. El-Masry n, S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Defects; Etching; GaN nanowires; X-ray diffraction; Lateral overgrowth; Nitrides
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Planar defects in thin films of InGaN

Microscopy and Microanalysis, 18(S2), 1486–1487.

By: Z. Liliental-Weber*, K. Yu*, D. Zakharov* & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2011 journal article

Embedded voids approach for low defect density in epitaxial GaN films

APPLIED PHYSICS LETTERS, 98(2).

By: P. Frajtag n, N. El-Masry n, N. Nepal n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32.

By: P. Frajtag n, J. Samberg n, N. El-Masry n, N. Nepal n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: Nanostructures; Line defects; Volume defects; Etching; Metalorganic chemical vapor deposition; Nitrides
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

Applied Physics Letters, 98(14), 143104.

By: P. Frajtag n, A. Hosalli n, G. Bradshaw n, N. Nepal n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: February 24, 2020

2011 article

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: N. Nepal n, P. Frajtag n, J. Zavada n, N. El-Masry n, S. Bedair n, C. Wetzel, A. Khan

co-author countries: United States of America 🇺🇸
author keywords: GaN; sidewall epitaxy; semi-polar plane; sidewall LEDs
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888.

By: P. Colter n, C. Carlin n, J. Samberg n, G. Bradshaw n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: quantum size effects; strain balanced superlattices; tunneling
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Strain relaxation in InxGa1-xN/GaN quantum well structures

Physica Status Solidi (c), 8(7-8), 2034–2037.

By: A. Emar n, E. Berkman n, J. Zavada n, N. El-Masry n & S. Bedair n

co-author countries: China 🇨🇳 Egypt 🇪🇬 United States of America 🇺🇸
author keywords: InGaN; strain relaxation; GaN-LED
Source: Crossref
Added: February 24, 2020

2011 journal article

Structural defects and cathodoluminescence of InxGa1-xN layers

Physica Status Solidi (c), 8(7-8), 2248–2250.

By: Z. Liliental-Weber*, D. Ogletree*, K. Yu*, M. Hawkridge*, J. Domagala*, J. Bak-Misiuk*, A. Berman*, A. Emara n, S. Bedair n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: nitride semiconductors; strained and relaxed InGaN; TEM; stacking faults; cathodoluminescence
Source: Crossref
Added: August 28, 2020

2010 conference paper

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

By: M. Luen n, N. Nepal n, P. Frajtag n, J. Zavada n, E. Brown*, U. Hommerich*, S. Bedair n, N. El Masry n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Modeling of tunnel junctions for high efficiency solar cells

APPLIED PHYSICS LETTERS, 97(4).

By: J. Hauser n, Z. Carlin n & S. Bedair n

co-author countries: United States of America 🇺🇸
author keywords: aluminium compounds; conduction bands; gallium arsenide; gallium compounds; indium compounds; semiconductor diodes; semiconductor heterojunctions; solar cells; tunnelling
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

APPLIED PHYSICS LETTERS, 94(13).

By: N. Nepal n, M. Luen n, J. Zavada n, S. Bedair n, P. Frajtag n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: ferromagnetic materials; gallium compounds; Hall effect; III-V semiconductors; magnetic multilayers; magnetic thin films; magnetisation; manganese compounds; paramagnetism; p-n heterojunctions; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Spontaneous stratification of InGaN layers and its influence on optical properties

Physica Status Solidi (c), 6(S2), S433–S436.

By: Z. Liliental-Weber, K. Yu*, M. Hawkridge*, S. Bedair n, A. Berman n, A. Emara n, J. Domagala*, J. Bak-Misiuk*

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2009 journal article

Structural perfection of InGaN layers and its relation to photoluminescence

Physica Status Solidi (c), 6(12), 2626–2631.

By: Z. Liliental-Weber*, K. Yu*, M. Hawkridge*, S. Bedair n, A. Berman n, A. Emara n, D. Khanal*, J. Wu*, J. Domagala*, J. Bak-Misiuk*

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2008 journal article

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

APPLIED PHYSICS LETTERS, 92(10).

By: E. Berkman n, N. El-Masry n, A. Emara n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys

APPLIED PHYSICS LETTERS, 91(22).

By: N. Nepal n, S. Bedair n, N. El-Masry n, D. Lee*, A. Steckl* & J. Zavada*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Correlation between photoluminescence and magnetic properties of GaMnN films

APPLIED PHYSICS LETTERS, 91(24).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

APPLIED PHYSICS LETTERS, 90(15).

By: P. Barletta n, E. Berkman n, B. Moody n, N. El-Masry n, A. Emara n, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2007 patent

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

APPLIED PHYSICS LETTERS, 86(10).

By: M. Reed n, F. Arkun n, E. Berkman n, N. Elmasry n, J. Zavada*, M. Luen n, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Five-nanometer thick silicon on insulator layer

JOURNAL OF APPLIED PHYSICS, 98(10).

By: N. Elmasry n, M. Hunter n, A. ElNaggar n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Magnetic properties of Mn-doped GaN andp-i-n junctions

Physica Status Solidi (c), 2(7), 2403–2406.

By: M. Reed n, M. Reed, M. Luen n, E. Berkman n, F. Arkun n, S. Bedair n, J. Zavada*, N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: February 24, 2020

2005 patent

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface

APPLIED PHYSICS LETTERS, 85(17), 3809–3811.

By: F. Arkun n, M. Reed n, E. Berkman n, N. El-Masry n, J. Zavada*, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

Applied Physics Letters, 84(5), 672–674.

By: D. Xiao n, K. Kim n, S. Bedair n & J. Zavada*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref
Added: August 6, 2018

2004 article

Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194.

By: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler*

co-author countries: United States of America 🇺🇸

Contributors: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2004 patent

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Washington, DC: U.S. Patent and Trademark Office.

By: Z. Zhang, V. Misra, S. Bedair & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

By: B. Moody n, P. Barletta n, N. El-Masry n, J. Roberts n, M. Aumer n, S. LeBoeuf n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

APPLIED PHYSICS LETTERS, 80(17), 3099–3101.

By: M. Aumer n, S. LeBoeuf n, B. Moody n, S. Bedair n, K. Nam*, J. Lin*, H. Jiang*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.

By: Z. Liliental-Weber, M. Benamara*, J. Washburn*, J. Domagala*, J. Bak-Misiuk*, E. Piner n, J. Roberts n, S. Bedair n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: InGaN; strained layer; relaxed layer; planar defects; TEM; x-rays
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

By: M. Reed n, N. El-Masry n, H. Stadelmaier n, M. Ritums n, M. Reed n, C. Parker n, J. Roberts n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

By: M. Reed n, M. Ritums n, H. Stadelmaier n, M. Reed n, C. Parker n, S. Bedair n, N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: magnetic; semiconductors; Ga-Mn-N
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

By: N. El-Masry n, M. Behbehani n, S. LeBoeuf n, M. Aumer n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

APPLIED PHYSICS LETTERS, 79(23), 3803–3805.

By: M. Aumer n, S. LeBoeuf n, B. Moody n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

By: D. Alexson n, L. Bergman n, R. Nemanich n, M. Dutta*, M. Stroscio*, C. Parker n, S. Bedair n, N. El-Masry n, F. Adar

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed n, N. El-Masry n, C. Parker n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

By: M. Aumer n, S. LeBoeuf n, S. Bedair n, M. Smith*, J. Lin* & H. Jiang*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

By: M. Hunter n, M. Reed n, N. El-Masry n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.

By: S. LeBoeuf n, M. Aumer n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

MATERIALS LETTERS, 42(1-2), 121–129.

By: S. Liu n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: MnSb; ferromagnetic thin films; GaAs substrate; Mn-prelayer; pulsed laser deposition
Source: Web Of Science
Added: August 6, 2018

2000 journal article

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

By: M. Reed n, S. Liu n, J. Roberts n, H. Stadelmaier n, S. Bedair n & N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: MnSb; multilayers; planar Hall effect; GaAs; ferromagnetic
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n & N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

High optical quality AlInGaN by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(21), 3315–3317.

By: M. Aumer n, S. LeBoeuf n, F. McIntosh n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins*, A. Paul*, C. Parker n, J. Roberts n, S. Bedair n, E. Piner n, N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n, N. El-Masry n, L. Robins*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

By: M. Behbehani n, E. Piner n, S. Liu n, N. El-Masry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Phase separation in InGaN grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 72(1), 40–42.

By: N. El-Masry n, E. Piner n, S. Liu n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

By: E. Piner n, M. Behbehani n, N. ElMasry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

By: F. McIntosh*, E. Piner, J. Roberts*, M. Behbehani*, M. Aumer*, N. ElMasry, S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. ElMasry n

co-author countries: United States of America 🇺🇸
author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

By: E. Piner n, M. Behbehani n, N. ElMasry n, J. Roberts n, F. McIntosh n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1992 journal article

CRITERION FOR SUPPRESSING WAFER BOW IN HETEROSTRUCTURES BY SELECTIVE EPITAXY

MATERIALS LETTERS, 14(1), 58–62.

By: N. Elmasry, S. Hussien, A. Fahmy*, N. Karam & S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1990 journal article

A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS

JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857.

By: S. Hussien n, A. Fahmy n, N. Elmasry n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

patent

Gradient lens fabrication

Reeber, R. R., Chu, W. K., & Bedair, S. M. Washington, DC: U.S. Patent and Trademark Office.

By: R. Reeber, W. Chu & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

journal article

Indium-based nitride compounds

Bedair, S. M. Semiconductors and Semimetals, 50(1998), 127–166.

By: S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

Source: NC State University Libraries
Added: August 6, 2018

patent

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.

By: N. ElMasry, S. Bedair, M. Reed & H. Stadelmaier

Source: NC State University Libraries
Added: August 6, 2018

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