Salah M A. Bedair

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 125(8).

Improved LED output power and external quantum efficiency using InGaN templates

APPLIED PHYSICS LETTERS, 120(8).

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

APPLIED PHYSICS LETTERS, 121(5).

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology

P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology. APPLIED PHYSICS LETTERS, 119(12).

Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates

SUPERLATTICES AND MICROSTRUCTURES, 160.

The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 36(3).

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN

Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN. APPLIED PHYSICS LETTERS, 117(5).

Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates

TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064.

Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 215.

Observing relaxation in device quality InGaN templates by TEM techniques

APPLIED PHYSICS LETTERS, 116(10).

Thermodynamics Models for V-pit Nucleation and Growth in III-Nitride on Silicon

JOM, 73(1), 293–298.

Embedded void approach effects on intrinsic stresses in laterally grown GaN-on-Si substrate

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 242, 104–110.

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1-xN (0 < x < 0.16) templates for controlled emissions from MQW. JOURNAL OF CRYSTAL GROWTH, 520, 18–26.

Modelling of III-Nitride Epitaxial Layers Grown on Silicon Substrates with Low Dislocation-Densities

MRS ADVANCES, 4(13), 755–760.

Quantum Well Solar Cells: Principles, Recent Progress, and Potential

IEEE JOURNAL OF PHOTOVOLTAICS, 9(2), 402–423.

Impact of embedded voids on thin-films with high thermal expansion coefficients mismatch

APPLIED PHYSICS LETTERS, 112(4).

Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic

ENERGY TECHNOLOGY 2018: CARBON DIOXIDE MANAGEMENT AND OTHER TECHNOLOGIES, pp. 453–461.

Tunnel Junctions for III-V Multijunction Solar Cells Review

[Review of ]. CRYSTALS, 8(12).

100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

APPLIED PHYSICS LETTERS, 111(8).

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

Annealed high band gap tunnel junctions with peak current densities above 800 A/cm(2)

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2320–2322.

Extending the absorption threshold of InGaP solar cells to 1.60 eV using quantum wells: experimental and modeling results

2016 ieee 43rd photovoltaic specialists conference (pvsc), 2366–2370.

High Performance Tunnel Junction with Resistance to Thermal Annealing

12TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-12), Vol. 1766.

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

APPLIED PHYSICS LETTERS, 108(20).

InGaP-based quantum well solar cells

2016 ieee 43rd photovoltaic specialists conference (pvsc), 147–150.

InGaP-based quantum well solar cells: Growth, structural design, and photovoltaic properties

JOURNAL OF APPLIED PHYSICS, 119(9).

Strain-Balanced InGaAsP/GaInP Multiple Quantum Well Solar Cells With a Tunable Bandgap (1.65-1.82 eV)

IEEE JOURNAL OF PHOTOVOLTAICS, 6(4), 997–1003.

Growth and Characterization of High-Quality, Relaxed In (y) Ga1-y N Templates for Optoelectronic Applications

JOURNAL OF ELECTRONIC MATERIALS, 44(11), 4161–4166.

Tunable GaInP solar cell lattice matched to GaAs

2015 ieee 42nd photovoltaic specialist conference (pvsc).

GaInP/GaAs Tandem Solar Cells With InGaAs/GaAsP Multiple Quantum Wells

IEEE JOURNAL OF PHOTOVOLTAICS, 4(2), 614–619.

Strain-balanced InGaN/GaN multiple quantum wells

APPLIED PHYSICS LETTERS, 105(3).

Biomolecular Gradients via Semiconductor Gradients: Characterization of Amino Acid Adsorption to InxGa1–xN Surfaces

ACS Applied Materials & Interfaces, 5(15), 7236–7243.

Determination of carrier recombination lifetime in InGaAs quantum wells from external quantum efficiency measurements

2013 ieee 39th photovoltaic specialists conference (pvsc), 264–267.

Effect of GaAs interfacial layer on the performance of high bandgap tunnel junctions for multijunction solar cells

APPLIED PHYSICS LETTERS, 103(10).

Gallium nitride nanowires by maskless hot phosphoric wet etching

APPLIED PHYSICS LETTERS, 103(8).

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

APPLIED PHYSICS LETTERS, 103(7).

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

Minority Carrier Transport and Their Lifetime in InGaAs/GaAsP Multiple Quantum Well Structures

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(8), 2532–2536.

Modeling an InGaP/AlGaAs tunnel junction containing an AlAs diffusion barrier

2013 ieee 39th photovoltaic specialists conference (pvsc), 2082–2085.

Molecular Interactions on InxGa1−xN

In G. Shaw III, B. Prorok, L. Starman, & C. Furlong (Eds.), MEMS and Nanotechnology (pp. 109–114).

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

JOURNAL OF CRYSTAL GROWTH, 367, 88–93.

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

APPLIED PHYSICS LETTERS, 103(18).

Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures

2013 ieee 39th photovoltaic specialists conference (pvsc), 1737–1740.

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE JOURNAL OF PHOTOVOLTAICS, 3(1), 278–283.

Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (similar to 80%)

JOURNAL OF ELECTRONIC MATERIALS, 42(5), 912–917.

Planar defects in thin films of InGaN

Microscopy and Microanalysis, 18(S2), 1486–1487.

Embedded voids approach for low defect density in epitaxial GaN films

APPLIED PHYSICS LETTERS, 98(2).

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

JOURNAL OF CRYSTAL GROWTH, 322(1), 27–32.

Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires

Applied Physics Letters, 98(14), 143104.

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. (2012, August 1). JOURNAL OF CRYSTAL GROWTH, Vol. 352, pp. 203–208.

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208(12), 2884–2888.

Strain relaxation in InxGa1-xN/GaN quantum well structures

Physica Status Solidi (c), 8(7-8), 2034–2037.

Structural defects and cathodoluminescence of InxGa1-xN layers

Physica Status Solidi (c), 8(7-8), 2248–2250.

Modeling of tunnel junctions for high efficiency solar cells

APPLIED PHYSICS LETTERS, 97(4).

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

APPLIED PHYSICS LETTERS, 94(13).

Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion

Novel materials and devices for spintronics, 1183, 45–50.

Spontaneous stratification of InGaN layers and its influence on optical properties

Physica Status Solidi (c), 6(S2), S433–S436.

Structural perfection of InGaN layers and its relation to photoluminescence

Physica Status Solidi (c), 6(12), 2626–2631.

Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range

APPLIED PHYSICS LETTERS, 92(10).

Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys

APPLIED PHYSICS LETTERS, 91(22).

Correlation between photoluminescence and magnetic properties of GaMnN films

APPLIED PHYSICS LETTERS, 91(24).

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

APPLIED PHYSICS LETTERS, 90(15).

Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature

APPLIED PHYSICS LETTERS, 90(25).

Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

APPLIED PHYSICS LETTERS, 86(10).

Five-nanometer thick silicon on insulator layer

JOURNAL OF APPLIED PHYSICS, 98(10).

Magnetic properties of Mn-doped GaN andp-i-n junctions

Physica Status Solidi (c), 2(7), 2403–2406.

Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein

Washington, DC: U.S. Patent and Trademark Office.

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface

APPLIED PHYSICS LETTERS, 85(17), 3809–3811.

Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures

Applied Physics Letters, 84(5), 672–674.

Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194.

Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates

Washington, DC: U.S. Patent and Trademark Office.

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

APPLIED PHYSICS LETTERS, 80(17), 3099–3101.

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

APPLIED PHYSICS LETTERS, 79(23), 3803–3805.

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

MATERIALS LETTERS, 42(1-2), 121–129.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

High optical quality AlInGaN by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(21), 3315–3317.

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition

APPLIED PHYSICS LETTERS, 75(15), 2202–2204.

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

Phase separation in InGaN grown by metalorganic chemical vapor deposition

APPLIED PHYSICS LETTERS, 72(1), 40–42.

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

CRITERION FOR SUPPRESSING WAFER BOW IN HETEROSTRUCTURES BY SELECTIVE EPITAXY

MATERIALS LETTERS, 14(1), 58–62.

A CRITERION FOR THE SUPPRESSION OF PLASTIC-DEFORMATION IN LASER-ASSISTED CHEMICAL VAPOR-DEPOSITION OF GAAS

JOURNAL OF APPLIED PHYSICS, 67(8), 3853–3857.

Gradient lens fabrication

Reeber, R. R., Chu, W. K., & Bedair, S. M. Washington, DC: U.S. Patent and Trademark Office.

Indium-based nitride compounds

Bedair, S. M. Semiconductors and Semimetals, 50(1998), 127–166.

Strain relaxation in InxGa1-xN/GaN quantum well structures

Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

ElMasry, N. A., Bedair, S. M., Reed, M. L., & Stadelmaier, H. Washington, DC: U.S. Patent and Trademark Office.