Works (13)
Updated: July 5th, 2023 15:46
2019 journal article
Oxygen and silicon point defects in Al0.65Ga0.35N
PHYSICAL REVIEW MATERIALS, 3(5).
Sources: Web Of Science, NC State University Libraries
Added: June 17, 2019
2018 journal article
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
APPLIED PHYSICS LETTERS, 112(6).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2018 journal article
On compensation in Si-doped AlN
APPLIED PHYSICS LETTERS, 112(15).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2015 journal article
Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics
Nature Materials, 14(4), 414–420.
TL;DR:
This work shows that CdO:Dy is a model system for intrinsic and extrinsic manipulation of defects affecting electrical, optical and thermal properties, that oxide conductors are ideal candidates for plasmonic devices and that the defect engineering approach for property optimization is generally applicable to other conducting metal oxides.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018
2014 journal article
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
APPLIED PHYSICS LETTERS, 105(22).
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2014 journal article
Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO
PHYSICAL REVIEW B, 90(12).
Source: Web Of Science
Added: August 6, 2018
2014 journal article
Smooth cubic commensurate oxides on gallium nitride
JOURNAL OF APPLIED PHYSICS, 115(6).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2014 journal article
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
APPLIED PHYSICS LETTERS, 104(20).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2013 journal article
Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation
JOURNAL OF APPLIED PHYSICS, 113(20).
Source: Web Of Science
Added: August 6, 2018
2013 journal article
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
APPLIED PHYSICS LETTERS, 103(16).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2012 journal article
On the origin of the 265 nm absorption band in AlN bulk crystals
APPLIED PHYSICS LETTERS, 100(19).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2011 journal article
Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions
NATURE COMMUNICATIONS, 2.
TL;DR:
This work presents a general synthesis methodology, involving systematic control of the chemical boundary conditions in situ, by which the crystal habit, and thus growth mode, can be actively engineered, and establishes the capability for layer-by-layer deposition in systems that otherwise default to island formation and grainy morphology.
(via Semantic Scholar)
www.nature.com (publisher PDF)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
conference paper
On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates
Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.
Source: NC State University Libraries
Added: August 6, 2018
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