Benjamin Erik Gaddy

Oxygen and silicon point defects in Al0.65Ga0.35N

PHYSICAL REVIEW MATERIALS, 3(5).

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics

Nature Materials, 14(4), 414–420.

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO

PHYSICAL REVIEW B, 90(12).

Smooth cubic commensurate oxides on gallium nitride

JOURNAL OF APPLIED PHYSICS, 115(6).

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

APPLIED PHYSICS LETTERS, 104(20).

Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

JOURNAL OF APPLIED PHYSICS, 113(20).

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

APPLIED PHYSICS LETTERS, 103(16).

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100(19).

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

NATURE COMMUNICATIONS, 2.

On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.