Works (13)

Updated: July 5th, 2023 15:46

2019 journal article

Oxygen and silicon point defects in Al0.65Ga0.35N

PHYSICAL REVIEW MATERIALS, 3(5).

By: J. Harris n, B. Gaddy n, R. Collazo n , Z. Sitar n & D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 17, 2019

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy* , B. Gaddy n, B. Sarkar n, M. Breckenridge  n, Q. Guo n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

On compensation in Si-doped AlN

APPLIED PHYSICS LETTERS, 112(15).

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy* , R. Collazo n , Z. Sitar n, D. Irving n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics

Nature Materials, 14(4), 414–420.

By: E. Sachet n, C. Shelton n, J. Harris n, B. Gaddy n, D. Irving n, S. Curtarolo *, B. Donovan *, P. Hopkins * ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2014 journal article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

APPLIED PHYSICS LETTERS, 105(22).

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO

PHYSICAL REVIEW B, 90(12).

By: B. Gaddy n, E. Paisley n, J. Maria n & D. Irving n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Smooth cubic commensurate oxides on gallium nitride

JOURNAL OF APPLIED PHYSICS, 115(6).

By: E. Paisley n, B. Gaddy n, J. LeBeau n, C. Shelton n, M. Biegalski*, H. Christen*, M. Losego n, S. Mita n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

APPLIED PHYSICS LETTERS, 104(20).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, J. Xie*, R. Dalmau *, B. Moody *, Y. Kumagai *, T. Nagashima* ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

JOURNAL OF APPLIED PHYSICS, 113(20).

By: B. Gaddy n, A. Kingon* & D. Irving n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

APPLIED PHYSICS LETTERS, 103(16).

By: B. Gaddy n, Z. Bryan n, I. Bryan n, R. Kirste n, J. Xie*, R. Dalmau *, B. Moody *, Y. Kumagai * ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

On the origin of the 265 nm absorption band in AlN bulk crystals

APPLIED PHYSICS LETTERS, 100(19).

By: R. Collazo n , J. Xie*, B. Gaddy n, Z. Bryan n, R. Kirste n, M. Hoffmann n, R. Dalmau *, B. Moody * ...

co-author countries: Japan 🇯🇵 United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

NATURE COMMUNICATIONS, 2.

By: E. Paisley n, M. Losego n, B. Gaddy n, J. Tweedie n, R. Collazo n , Z. Sitar n, D. Irving n, J. Maria n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

conference paper

On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.

By: D. Alden, Z. Bryan, B. Gaddy, I. Bryan, G. Callsen, A. Koukitu, Y. Kumagai, A. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

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