Benjamin Erik Gaddy

Works (13)

Updated: July 5th, 2023 15:46

2019 article

Oxygen and silicon point defects in Al0.65Ga0.35N

Harris, J. S., Gaddy, B. E., Collazo, R., Sitar, Z., & Irving, D. L. (2019, May 20). Physical Review Materials, Vol. 3.

By: J. Harris n, B. Gaddy n, R. Collazo n , Z. Sitar n & D. Irving n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: June 17, 2019

2018 article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018, February 5). Applied Physics Letters, Vol. 112, p. 062102.

By: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy* , B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

Contributors: I. Bryan n, Z. Bryan n, S. Washiyama n, P. Reddy* , B. Gaddy n, B. Sarkar n, M. Breckenridge n, Q. Guo n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2018 article

On compensation in Si-doped AlN

Harris, J. S., Baker, J. N., Gaddy, B. E., Bryan, I., Bryan, Z., Mirrielees, K. J., … Irving, D. L. (2018, April 9). Applied Physics Letters, Vol. 112.

By: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy* , R. Collazo n , Z. Sitar n, D. Irving n

Contributors: J. Harris n, J. Baker n, B. Gaddy n, I. Bryan n, Z. Bryan n, K. Mirrielees n, P. Reddy* , R. Collazo n , Z. Sitar n, D. Irving n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2015 journal article

Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics

Nature Materials, 14(4), 414–420.

By: E. Sachet n, C. Shelton n, J. Harris n, B. Gaddy n, D. Irving n, S. Curtarolo *, B. Donovan *, P. Hopkins * ...

topics (OpenAlex): Plasmonic and Surface Plasmon Research; ZnO doping and properties; Nanowire Synthesis and Applications
TL;DR: This work shows that CdO:Dy is a model system for intrinsic and extrinsic manipulation of defects affecting electrical, optical and thermal properties, that oxide conductors are ideal candidates for plasmonic devices and that the defect engineering approach for property optimization is generally applicable to other conducting metal oxides. (via Semantic Scholar)
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Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

2014 article

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., … Collazo, R. (2014, December 1). Applied Physics Letters, Vol. 105, p. 222101.

By: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

Contributors: Z. Bryan n, I. Bryan n, B. Gaddy n, P. Reddy n , L. Hussey n, M. Bobea n, W. Guo n, M. Hoffmann n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018

2014 article

Overcoming the polarization catastrophe in the rocksalt oxides MgO and CaO

Gaddy, B. E., Paisley, E. A., Maria, J.-P., & Irving, D. L. (2014, September 3). Physical Review B.

By: B. Gaddy n, E. Paisley n, J. Maria n & D. Irving n

topics (OpenAlex): Electronic and Structural Properties of Oxides; ZnO doping and properties; Magnetic and transport properties of perovskites and related materials
Source: Web Of Science
Added: August 6, 2018

2014 article

Smooth cubic commensurate oxides on gallium nitride

Paisley, E. A., Gaddy, B. E., LeBeau, J. M., Shelton, C. T., Biegalski, M. D., Christen, H. M., … Maria, J.-P. (2014, February 11). Journal of Applied Physics, Vol. 115.

By: E. Paisley n, B. Gaddy n, J. LeBeau n, C. Shelton n, M. Biegalski*, H. Christen *, M. Losego n, S. Mita n ...

topics (OpenAlex): Semiconductor materials and devices; ZnO doping and properties; GaN-based semiconductor devices and materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2014 article

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J., Dalmau, R., Moody, B., … Irving, D. L. (2014, May 19). Applied Physics Letters, Vol. 104.

By: B. Gaddy n, Z. Bryan n, I. Bryan n, J. Xie  n, R. Dalmau  n, B. Moody  n, Y. Kumagai  n, T. Nagashima n ...

topics (OpenAlex): Ga2O3 and related materials; GaN-based semiconductor devices and materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2013 article

Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

Gaddy, B. E., Kingon, A. I., & Irving, D. L. (2013, May 28). Journal of Applied Physics.

By: B. Gaddy n, A. Kingon* & D. Irving n

topics (OpenAlex): Metal and Thin Film Mechanics; Force Microscopy Techniques and Applications; Molecular Junctions and Nanostructures
Source: Web Of Science
Added: August 6, 2018

2013 article

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J., Dalmau, R., … Irving, D. L. (2013, October 14). Applied Physics Letters, Vol. 103.

By: B. Gaddy n, Z. Bryan n, I. Bryan n, R. Kirste n, J. Xie *, R. Dalmau *, B. Moody *, Y. Kumagai * ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 article

On the origin of the 265 nm absorption band in AlN bulk crystals

Collazo, R., Xie, J., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., … Sitar, Z. (2012, May 7). Applied Physics Letters, Vol. 100.

By: R. Collazo n , J. Xie *, B. Gaddy n, Z. Bryan n, R. Kirste n, M. Hoffmann n, R. Dalmau *, B. Moody * ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 article

Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Paisley, E. A., Losego, M. D., Gaddy, B. E., Tweedie, J. S., Collazo, R., Sitar, Z., … Maria, J.-P. (2011, September 6). Nature Communications, Vol. 2.

By: E. Paisley n, M. Losego n, B. Gaddy n, J. Tweedie n, R. Collazo n , Z. Sitar n, D. Irving n, J. Maria n

topics (OpenAlex): Electronic and Structural Properties of Oxides; Semiconductor materials and devices; ZnO doping and properties
TL;DR: This work presents a general synthesis methodology, involving systematic control of the chemical boundary conditions in situ, by which the crystal habit, and thus growth mode, can be actively engineered, and establishes the capability for layer-by-layer deposition in systems that otherwise default to island formation and grainy morphology. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

conference paper

On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates

Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., … Collazo, R. Wide bandgap semiconductor materials and devices 17, 72(5), 31–40.

By: D. Alden, Z. Bryan, B. Gaddy, I. Bryan, G. Callsen, A. Koukitu, Y. Kumagai, A. Hoffmann ...

Source: NC State University Libraries
Added: August 6, 2018

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