Baxter F Moody

AlGaN based UVC LEDs on AlN with reflective contacts

Kirste, R., Loveless, J., Almeter, J., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, March 19). (Vol. 3). Vol. 3.

Pathway to >60% Efficiency in AlGaN‐Based Ultraviolet‐C Light‐Emitting Diodes

Loveless, J., Almeter, J., Kirste, R., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, October 28). Physica Status Solidi (a).

Anderson transition in compositionally graded p-AlGaN

Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.

High p-conductivity in AlGaN enabled by polarization field engineering

Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.

Weak localization and dimensional crossover in compositionally graded AlxGa1−xN

Al-Tawhid, A., Shafe, A.-A., Bagheri, P., Guan, Y., Reddy, P., Mita, S., … Ahadi, K. (2021, February 22). Applied Physics Letters, Vol. 118, p. 082101.