Works (4)

Updated: May 22nd, 2023 08:38

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

Sources: Web Of Science, ORCID
Added: April 19, 2023

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy, W. Mecouch, M. Breckenridge n, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya, S. Stein, W. Mecouch, M. Breckenridge, S. Rathkanthiwar, S. Mita, B. Moody, P. Reddy ...

author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

Weak localization and dimensional crossover in compositionally graded AlxGa1-xN

APPLIED PHYSICS LETTERS, 118(8).

Sources: Web Of Science, ORCID
Added: February 25, 2021