Bilal Gokce

Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation

Journal of the Korean Physical Society, 60(10), 1685–1689.

Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 30(4).

Back-reflection second-harmonic generation of (111)Si: Theory and experiment

Journal of the Korean Physical Society, 58(5), 1237–1243.

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Applied Physics Letters, 98(2).

Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

Applied Physics Letters, 98(12).

Measurement and control of in-plane surface chemistry during oxidation of H-terminated (111)Si

Physics of semiconductors: 30th international conference on the physics of semiconductors, 1399.

Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

Proceedings of the National Academy of Sciences of the United States of America, 107(41), 17503–17508.