Bilal Gokce

Works (7)

Updated: July 5th, 2023 15:48

2012 journal article

Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 60(10), 1685–1689.

By: B. Gokce n, K. Gundogdu n  & D. Aspnes* 

author keywords: Oxidation; Silicon; Second harmonic generation
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2012 journal article

Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 30(4).

By: B. Gokce, D. Dougherty & K. Gundogdu 

Source: NC State University Libraries
Added: August 6, 2018

2011 article

Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment

Gokce, B., Gundogdu, K., Adles, E. J., & Aspnes, D. E. (2011, May). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1237–1243.

By: B. Gokce*, K. Gundogdu* , E. Adles & D. Aspnes n 

author keywords: Second-harmonic generation; (111)Si; Anisotropic bond model
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Applied Physics Letters, 98(2).

By: B. Gokce, D. Aspnes , G. Lucovsky & K. Gundogdu 

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

Applied Physics Letters, 98(12).

By: B. Gokce, D. Aspnes  & K. Gundogdu 

Source: NC State University Libraries
Added: August 6, 2018

2011 article

Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol. 1399.

By: B. Gokce n, E. Adles n, D. Aspnes n  & K. Gundogdu n 

author keywords: Silicon; nonlinear optics; oxidation; second-harmonic generation
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2010 journal article

Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si

Proceedings of the National Academy of Sciences, 107(41), 17503–17508.

By: B. Gokce n, E. Adles  n, D. Aspnes n  & K. Gundogdu n 

author keywords: silicon; hyperpolarizability; ellipsometry; metrology; optical
MeSH headings : Anisotropy; Chemistry / methods; Hydrogen / chemistry; Models, Chemical; Molecular Conformation; Nonlinear Dynamics; Oxidation-Reduction; Silicon / chemistry
TL;DR: This work demonstrates both control and measurement of the oxidation of H-terminated (111) Si by externally applying uniaxial strain, and measurement by second-harmonic generation (SHG) together with the anisotropic-bond model of nonlinear optics. (via Semantic Scholar)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

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