2012 journal article
Control of the oxidation kinetics of H-terminated (111)Si by using the carrier concentration and the strain: a second-harmonic-generation investigation
Journal of the Korean Physical Society, 60(10), 1685–1689.
2012 journal article
Effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 30(4).
2011 conference paper
Back-reflection second-harmonic generation of (111)Si: Theory and experiment
Journal of the Korean Physical Society, 58(5), 1237–1243.
2011 journal article
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Applied Physics Letters, 98(2).
2011 journal article
Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si
Applied Physics Letters, 98(12).
2011 conference paper
Measurement and control of in-plane surface chemistry during oxidation of H-terminated (111)Si
Physics of semiconductors: 30th international conference on the physics of semiconductors, 1399.
2010 journal article
Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si
Proceedings of the National Academy of Sciences, 107(41), 17503–17508.