Works (168)

Updated: April 4th, 2024 18:38

2023 conference paper

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.

Contributors: R. Narwal n, S. Rawat n, A. Kanale n, T. Cheng n, A. Agarwal n, S. Bhattacharya n, B. Baliga n, D. Hopkins n

Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Commutation cell; four quadrant switch; SiC Bidirectional FET; BiDFET; characterization; switching loss; dead time; overlap time; commutation scheme; matrix converter
Sources: Web Of Science, Crossref, ORCID
Added: July 3, 2023

2023 article

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC.

Contributors: R. Narwal n, S. Bhattacharya n, B. Baliga n & D. Hopkins n

author keywords: Bidirectional switches; four-quadrant switches; current source inverter; interleaved buck converter; modulation; commutation; SiC bidirectional FET; BiDFET; CSI; CSC
Sources: Web Of Science, ORCID
Added: October 10, 2023

2023 journal article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

IEEE ACCESS, 11, 89277–89289.

author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source (CS); common-drain (CD); current source inverter (CSI); current switch; medium-voltage (MV); reverse-voltage blocking (RVB) switch; wide-bandgap devices; GaN; SiC
Sources: Web Of Science, ORCID
Added: August 8, 2023

2023 journal article

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

Contributors: S. Bhattacharya n, R. Narwal n, S. Shah*, B. Baliga n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n, T. Cheng n

author keywords: Motor drives; Silicon carbide; Power supplies; PIN photodiodes; Switches; Packaging; Transformers
Sources: Web Of Science, ORCID
Added: March 7, 2023

2023 journal article

Silicon Carbide Power Devices: Progress and Future Outlook

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 11(3), 2400–2411.

author keywords: 4H-silicon carbide (SiC); Baliga short-circuit improvement concept (BaSIC) topology; Baliga's figure-of-merit (BFOM); bidirectional field effect transistor (BiDFET); JBSFET; junction-barrier-Schottky (JBS) diode; monolithic reverse blocking transistor (MRBT); MOSFET; planar-gate; short-circuit (SC) capability; trench-gate
Source: Web Of Science
Added: July 31, 2023

2023 journal article

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

Contributors: B. Baliga n, D. Hopkins n, S. Bhattacharya n, A. Agarwal*, T. Cheng n, R. Narwal n, A. Kanale n, S. Shah, K. Han*

author keywords: Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters
Sources: Web Of Science, ORCID
Added: March 7, 2023

2023 book

The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor

(2nd ed.). Amsterdam: Elsevier.

By: B. Baliga

Source: NC State University Libraries
Added: November 13, 2023

2022 article proceedings

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

Contributors: A. Kanale n, T. Cheng n, R. Narwal n, A. Agarwal n, B. Baliga n, S. Bhattacharya n, D. Hopkins n

Event: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)

author keywords: Bidirectional; Silicon Carbide; Half-Bridge Module; H-Bridge; BiDFET
Sources: Web Of Science, Crossref, ORCID
Added: June 15, 2023

2022 journal article

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255.

By: A. Agarwal n & B. Baliga n

author keywords: 4H-SiC; accumulation; capacitance; cell optimization; gate charge; inversion; ion-implant straggle; on-resistance; silicon carbide; short-channel effect; transconductance
Source: Web Of Science
Added: March 28, 2022

2022 article

Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs

2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

By: A. Kumar n, S. Bhattacharya n & J. Baliga n

author keywords: SiC MOSFET; reverse recovery; dead-time; medium voltage; JBSFET; integrated diode
Sources: Web Of Science, ORCID
Added: November 20, 2023

2022 journal article

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.

By: A. Kanale n, A. Agarwal n, B. Baliga n & S. Bhattacharya n

author keywords: MOSFET; Silicon carbide; Schottky diodes; Capacitance; Voltage measurement; Logic gates; Capacitance measurement; 4H-SiC; CSI; current switch; monolithic; reverse-blocking
Sources: Web Of Science, ORCID
Added: May 25, 2022

2022 journal article

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241.

author keywords: 4H-SiC; accumulation mode; C-GD; figures of merit (FOMs); inversion mode; Junction Barrier Schottky Field-Effect Transistor (JBSFET); Q(GD); R-ON,R-SP; temperature dependence
Source: Web Of Science
Added: March 28, 2022

2021 journal article

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

By: A. Agarwal n & B. Baliga n

author keywords: 4H-SiC; accumulation-channel; analytical models; JBSFET; cell topology; linear; hexagonal; octagonal; figure-of-merit; numerical simulations; silicon carbide
Source: Web Of Science
Added: April 12, 2021

2021 article

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021, pp. 555–558.

By: A. Agarwal n, J. Baliga, M. Francois, E. Maxwell, N. Berliner & M. Papageorge

author keywords: 4H-SiC; Wide Band Gap Semiconductor Device Fabrication; Foundry; Power MOSFET; ACCUFET; INVFET
Source: Web Of Science
Added: September 13, 2021

2021 journal article

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-silicon carbide (SiC); cell design; hexagonal; inversion; junction barrier Schottky field effect transistor (JBSFET); linear; MOSFET; octagonal
Source: Web Of Science
Added: May 24, 2021

2021 journal article

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.

author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Topology; Switching loss; Switches; Power MOSFET; programmable control; robustness; short-circuit currents; silicon carbide
Source: Web Of Science
Added: October 19, 2020

2021 journal article

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

author keywords: 650 V; 4H-SiC; 10Vgate drive; gate-drain charge; gate oxide; high-frequency figures-of-merit; power MOSFETs; reverse-transfer capacitance; short-circuit withstand time; Si CoolMOS; specific ON-resistance; switching loss
Source: Web Of Science
Added: December 14, 2020

2021 journal article

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; inversion; JBSFET; cell topology; linear; hexagonal; octagonal; gate oxide thickness
Source: Web Of Science
Added: March 22, 2021

2021 article

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.

author keywords: BaSIC topology; Silicon Carbide; Power MOSFET; Short-circuit; Robustness
Source: Web Of Science
Added: September 20, 2021

2021 conference paper

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.

Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021

author keywords: Silicon Carbide; Bidirectional Switch; Switching Performance; Common-Source; Common-Drain
Sources: Web Of Science, ORCID, Crossref
Added: May 10, 2022

2021 journal article

Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.

author keywords: MOSFET; Silicon carbide; Silicon; Stress; Logic gates; Topology; Temperature measurement; Baliga Short-Circuit Improvement Concept (BaSIC) topology; depletion-mode MOSFET (DMM); power MOSFET; semiconductor device reliability; short-circuit (SC) currents
Source: Web Of Science
Added: December 20, 2021

2021 article

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.

author keywords: BaSIC; Short-circuit; Silicon Carbide; Power MOSFET; Parallel; Current Scaling; Composite MOSFETs
Source: Web Of Science
Added: May 10, 2022

2021 article

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282.

By: A. Kumar n, R. Kokkonda n, S. Bhattacharya n, J. Baliga n & V. Veliadis n

author keywords: Silicon Carbide; SiC MOSFETs; Short Circuit; Medium Voltage; Robustness
Sources: Web Of Science, ORCID
Added: July 5, 2022

2021 article

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

Contributors: S. Shah n, R. Narwal n, S. Bhattacharya n, A. Kanale n, T. Cheng n, U. Mehrotra n, A. Agarwal n, B. Baliga n, D. Hopkins n

author keywords: Bidirectional isolated AC-DC conversion; solar energy; PV grid integration; dual active bridge; AC/DC DAB; SiC bidirectional FET; BiDFET; four quadrant power switch
Sources: Web Of Science, ORCID
Added: July 5, 2022

2021 article

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

By: A. Kumar n, S. Bhattacharya n, J. Baliga n & V. Veliadis n

author keywords: SiC MOSFET; medium voltage; 3.3-kV; high-speed motor drive; 2.3 kV drive; NPC
Sources: Web Of Science, ORCID
Added: September 20, 2021

2021 journal article

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.

author keywords: 2.3 kV devices; 4H-SiC; C-gd; planar-gate MOSFET; Q(gd); R-ON; silicon carbide; thin gate oxide
Source: Web Of Science
Added: October 4, 2021

2021 article

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

By: A. Kumar n, S. Bhattacharya n, J. Baliga n & V. Veliadis n

author keywords: SiC MOSFET; medium voltage; PWM-CSI; reverse blocking; current switch
Sources: Web Of Science, ORCID
Added: September 20, 2021

2021 article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.

By: S. Narasimhan n, A. Kanale n, S. Bhattacharya n & J. Baliga n

author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source; common-drain; current switch; medium-voltage; reverse-voltage blocking switch; wide-band gap devices; CSI; CS; CD; GaN; SiC
Sources: Web Of Science, ORCID
Added: May 10, 2022

2021 journal article

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

author keywords: Silicon; MOSFET; Silicon carbide; Logic gates; Topology; Resistance; Inverters; BaSIC; EMM; power MOSFETs; short circuit capability; silicon carbide; topology
Source: Web Of Science
Added: April 19, 2021

2021 conference paper

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.

Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

author keywords: Silicon Carbide; Monolithic; Bidirectional; Four-Quadrant; Integrated; JBS Diode
Sources: Web Of Science, Crossref, ORCID
Added: September 4, 2021

2021 journal article

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

author keywords: Power MOSFET; robustness; short-circuit currents; optimization
Source: Web Of Science
Added: May 24, 2021

2020 journal article

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.

By: K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; SenseFET; monolithically integrated; sensing resistor; sensing voltage
Source: Web Of Science
Added: April 6, 2020

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

author keywords: 4H-SiC; 2.3 kV devices; accumulation channel; C-gd; planar-gate MOSFET; Q(gd); R-on,R-sp; silicon carbide; split-gate
Source: Web Of Science
Added: June 22, 2020

2020 article

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

author keywords: Junction Barrier Schottky (JBS) rectifier; 4H-SiC; Schottky barrier; Ni Schottky contact; Ti Schottky contact; leakage current knee voltage; on-resistance
Source: Web Of Science
Added: August 23, 2021

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal*, K. Han* & B. Jayant Baliga

author keywords: MOSFET; Silicon carbide; Logic gates; Silicon; Foundries; Insulated gate bipolar transistors; Object recognition
Source: Web Of Science
Added: February 3, 2020

2020 article

Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

author keywords: Gallium Nitride; BaSIC topology; power device; short-circuit; robustness; Sense voltage
Source: Web Of Science
Added: August 23, 2021

2020 journal article

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.

By: A. Agarwal n, K. Han n & B. Baliga n

author keywords: 4H-SiC; accumulation; cell topology; hexagonal; linear; MOSFET; octagonal; silicon carbide (SiC); square
Source: Web Of Science
Added: September 14, 2020

2020 journal article

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

author keywords: Fault detection; insulated gate bipolar transistor (IGBT); power MOSFET; power semiconductor switches; robustness
Source: Web Of Science
Added: August 17, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

author keywords: Logic gates; MOSFET; Voltage measurement; Capacitance; Silicon carbide; Electric fields; Silicon; 4H-SiC; 600 V; Cgd; gate oxide; inversion channel; planar-gate MOSFET; Qgd; Ron; sp; silicon carbide
Source: Web Of Science
Added: December 2, 2019

2019 journal article

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.

By: K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; cell design; octagonal; OCTFET; split-gate; C-gd; Q(gd); HF-FOMs
Source: Web Of Science
Added: July 22, 2019

2019 journal article

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.

By: K. Han n & B. Baliga n

author keywords: 4H-SiC; cell; C-gd; C-iss; hexagonal; HF-FOMs; linear; MOSFET; octagonal; Q(gd); silicon carbide (SiC); square
Source: Web Of Science
Added: June 17, 2019

2019 journal article

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.

By: K. Han n & B. Baliga n

author keywords: 4H-SiC; accumulation; body diode; inversion; MOSFET; silicon carbide; third quadrant
Source: Web Of Science
Added: September 16, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

author keywords: 4H-SiC; 600 V; cell topologies; C-gd; hexagonal layout; linear layout; octagonal layout; planar MOSFET; Q(gd); R-on,R-sp; silicon carbide; square layout
Source: Web Of Science
Added: June 4, 2019

2019 journal article

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.

By: K. Han n & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; cell; ALL; octagonal; C-gd; Q(gd); HF-FOMs
Source: Web Of Science
Added: February 18, 2019

2018 journal article

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251.

By: K. Han n, B. Baliga n & W. Sung*

author keywords: Silicon carbide; 4H-SiC; MOSFET; split gate; buffered gate; C-gd; Q(gd); HF-FOMs
Source: Web Of Science
Added: August 6, 2018

2018 article

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

By: Y. Jiang n, W. Sung*, J. Baliga n, S. Wang n, B. Lee n & A. Huang n

author keywords: Silicon carbide; high voltage; Schottky barrier height; high-temperature electrical performance
Source: Web Of Science
Added: August 6, 2018

2018 conference paper

Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2018-March, 2737–2742.

By: A. Kumar n, S. Parashar n, J. Baliga n & S. Bhattacharya n

Contributors: A. Kumar n, S. Parashar n, J. Baliga n & S. Bhattacharya n

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(4), 1647–1652.

By: W. Sung* & B. Baliga n

author keywords: 4H-Silicon Carbide (4H-SiC); edge termination; floating field ring (FFR); guard ring; JTE; junction termination extension (JTE); silicon carbide
Source: Web Of Science
Added: August 6, 2018

2017 conference paper

Applications and characterization of four quadrant GaN switch

2017 ieee energy conversion congress and exposition (ecce), 2017-January, 1967–1974.

By: U. Raheja n, G. Gohil n, K. Han n, S. Acharya n, B. Baliga n, S. Battacharya n, M. Labreque*, P. Smith*, R. Lal*

Contributors: U. Raheja n, G. Gohil n, K. Han n, S. Acharya n, B. Baliga n, S. Battacharya n, M. Labreque*, P. Smith*, R. Lal*

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212.

By: W. Sung* & B. Baliga n

author keywords: 4H-SiC; JBS diode; JBSFET; MOSFET; ohmic contact; power converter; schottky; silicon carbide
Source: Web Of Science
Added: August 6, 2018

2017 journal article

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB JOURNAL, 31(1), 346–355.

By: S. Cai n, J. Bodle n, P. Mathieu n, A. Amos n, M. Hamouda n, S. Bernacki n, G. McCarty n, E. Loboa n

author keywords: polycystin-1; intraflagellar protein-88; siRNA knockdown; signal transduction; calcium oscillations
MeSH headings : Adipose Tissue / cytology; Biomarkers; Calcium / metabolism; Cell Survival; Cells, Cultured; Cilia / physiology; Electric Stimulation; Gene Expression Regulation / physiology; Humans; Osteogenesis / physiology; RNA Interference; RNA, Small Interfering; Stem Cells / physiology
Source: Web Of Science
Added: August 6, 2018

2017 journal article

Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation

IEEE Electron Device Letters, 38(10), 1437–1440.

By: K. Han n, B. Baliga n & W. Sung*

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612.

By: W. Sung* & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; edge termination; junction termination extension; floating field rings
Source: Web Of Science
Added: August 6, 2018

2016 journal article

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.

author keywords: 4H-SiC; bevel termination; dicing; edge termination; high voltage; junction termination extension (JTE); silicon carbide
Source: Web Of Science
Added: August 6, 2018

2016 journal article

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme

IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608.

By: W. Sung* & B. Baliga n

author keywords: Silicon carbide; 4H-SiC; MOSFET; JBS diode; JBSFET; Schottky contact; ohmic contact
Source: Web Of Science
Added: August 6, 2018

2016 conference paper

SIC power devices: From conception to social impact (invited paper)

2016 46th european solid-state device research conference (essderc), 192–197.

By: B. Baliga n

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices

IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596.

author keywords: Edge termination; bevel dicing; junction termination extension (JTE); PiN diode; 4H-SiC
Source: Web Of Science
Added: August 6, 2018

2015 conference paper

Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications

2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015, 4151–4158.

By: K. Vechalapu n, A. Tripathi n, K. Mainali, B. Baliga n & S. Bhattacharya n

Contributors: K. Vechalapu n, A. Tripathi n, K. Mainali, B. Baliga n & S. Bhattacharya n

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

By: W. Sung n, A. Huang n, B. Baliga n, I. Ji n, H. Ke n & D. Hopkins n

Event: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2014 conference paper

Zero voltage switching characterization of 12 kV SiC N-IGBTs

Proceedings of the international symposium on power semiconductor, 350–353.

By: A. Kadavelugu n, S. Bhattcharya n, B. Baliga n, S. Ryu*, D. Grider* & J. Palmour*

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Analytical Modeling of IGBTs: Challenges and Solutions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 535–543.

By: B. Baliga n

author keywords: Blocking; insulated-gate bipolar transistor (IGBT); modeling; ON state; safe operating area; silicon carbide; switching
Source: Web Of Science
Added: August 6, 2018

2013 review

Gallium nitride devices for power electronic applications

[Review of ]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Source: Web Of Science
Added: August 6, 2018

2013 conference paper

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.

By: X. Huang n, G. Wang n, Y. Li n, A. Huang n & B. Baliga n

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension

Proceedings of the international symposium on power semiconductor, 179–182.

By: X. Huang n, B. Baliga n, A. Huang n, A. Suvorov, C. Capell*, L. Cheng*, A. Agarwal*

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.

author keywords: High voltage; JFET; normally on; silicon carbide; 4H-SiC
Source: Web Of Science
Added: August 6, 2018

2012 article

A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.

By: W. Sung n, B. Baliga n & A. Huang n

author keywords: 4H-SiC; fault isolation device; power distribution system; field controlled diode; field controlled thyristor; gating technique; cascode circuit; short circuit safe operating area
Source: Web Of Science
Added: August 6, 2018

2012 journal article

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.

author keywords: Edge termination; fault interruption device (FID); positive bevel; reverse blocking; symmetric blocking; 4H-SiC
Source: Web Of Science
Added: August 6, 2018

2011 journal article

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.

By: W. Sung n, E. Van Brunt n, B. Baliga n & A. Huang n

author keywords: Edge termination; junction termination extension (JTE); PiN diode; 4H-SiC
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363.

By: A. Ozbek n & B. Baliga n

author keywords: Breakdown voltage; edge termination; gallium nitride (GaN); Schottky diode
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302.

By: A. Ozbek n & B. Baliga n

author keywords: Breakdown voltage; edge termination; GaN; Schottky diode
Source: Web Of Science
Added: August 6, 2018

2011 personal communication

Tunneling coefficient for GaN Schottky barrier diodes

Ozbek, A. M., & Baliga, B. J. (2011, August).

By: A. Ozbek n & B. Baliga n

author keywords: Tunneling coefficient; GaN; Leakage current; Schottky barrier; Defects
Source: Web Of Science
Added: August 6, 2018

2010 conference paper

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Proceedings of the international symposium on power semiconductor, 217–220.

By: W. Sung, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 book

Advanced power rectifier concepts

By: B. Baliga*

Source: NC State University Libraries
Added: August 6, 2018

2009 article

Design and investigation of frequency capability of 15kV 4H-SiC IGBT

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274.

Source: Web Of Science
Added: August 6, 2018

2009 article

FREEDM System: Role of Power Electronics and Power Semiconductors in Developing an Energy Internet

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 9–12.

By: A. Huang n & J. Baliga n

Source: Web Of Science
Added: August 6, 2018

2009 article

RBSOA Study of High Voltage SiC Bipolar Devices

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 263–266.

Source: Web Of Science
Added: August 6, 2018

2009 journal article

Smart Grid Technologies

IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23.

By: J. Wang n, A. Huang n, W. Sung n, Y. Liu n & B. Baliga

Source: Web Of Science
Added: August 6, 2018

2008 book

Fundamentals of power semiconductor devices

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of forming power semiconductor devices having T-shaped gate electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

The future of power semiconductor device technology

PROCEEDINGS OF THE IEEE, 89(6), 822–832.

By: B. Baliga n

author keywords: insulated gate bipolar transistors; MOSFETs; power electronics; power integrated circuits; power rectifiers; power semi-conductor devices; Schottky diodes; silicon carbide; smart power technology; thyristors
Source: Web Of Science
Added: August 6, 2018

2000 patent

Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Current saturation control in silicon emitter switched thyristors

SOLID-STATE ELECTRONICS, 44(1), 133–142.

By: S. Sawant n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

2000 patent

Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Silicon planar ACCUFET: improved power MOSFET structure

ELECTRONICS LETTERS, 36(10), 913–915.

By: M. Bobde n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

SOLID-STATE ELECTRONICS, 43(10), 1901–1908.

By: S. Sawant n, S. Sridhar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Analysis and optimization of the planar 6H-SiC ACCUFET

SOLID-STATE ELECTRONICS, 43(2), 213–220.

By: P. Shenoy n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor

SOLID-STATE ELECTRONICS, 43(2), 395–402.

By: N. Thapar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1999 article

High-temperature operation of SiC planar ACCUFET

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 35, pp. 1458–1462.

By: R. Chilukuri n, P. Shenoy n & B. Baliga n

author keywords: ACCUFET; breakdown voltage; silicon carbide; specific on-resistance
Source: Web Of Science
Added: August 6, 2018

1999 patent

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Modeling the [dV/dt] of the IGBT during inductive turn off

IEEE TRANSACTIONS ON POWER ELECTRONICS, 14(4), 601–606.

By: A. Ramamurthy*, S. Sawant* & B. Baliga*

author keywords: insulated gate bipolar transistors; power semiconductor devices; semiconductor device modeling; semiconductor switches
Source: Web Of Science
Added: August 6, 2018

1999 patent

Power semiconductor devices having improved high frequency switching and breakdown characteristics

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

Power semiconductor devices having trench-based gate electrodes and field plates

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

Semiconductor switching devices having buried gate electrodes and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

SiC promises higher power MOS devices

Electronic Design, 47(24), 27.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC

SOLID-STATE ELECTRONICS, 43(2), 199–211.

By: R. Raghunathan* & B. Baliga*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

SOLID-STATE ELECTRONICS, 43(1), 1–9.

By: S. Mahalingam n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

An experimental evaluation of the on-state performance of trench IGBT designs

SOLID-STATE ELECTRONICS, 42(5), 771–776.

By: N. Thapar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Analysis and suppression of latch-up during IGBT mode of DG-BRT operation

SOLID-STATE ELECTRONICS, 42(3), 393–399.

By: T. Yamazaki n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

SOLID-STATE ELECTRONICS, 42(11), 1975–1979.

By: N. Thapar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 book

Cryogenic operation of silicon power devices

By: R. Singh n & B. Baliga n

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155–1161.

By: V. Nagapudi n, R. Sunkavalli n & B. Baliga n

author keywords: dielectric isolation; lateral IGBT; power IC's
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Improved DC-EST structure with diode diverter

ELECTRONICS LETTERS, 34(13), 1358–1360.

By: S. Sawant n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Lateral N-channel inversion mode 4H-SiC MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230.

By: S. Sridevan n & B. Baliga n

author keywords: inversion layer; mobility; MOSFET; silicon carbide
Source: Web Of Science
Added: August 6, 2018

1998 journal article

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73.

By: R. Raghunathan n & B. Baliga n

author keywords: breakdown; electric field; silicon carbide; Schottky rectifiers
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Reverse blocking lateral MOS-gated switches for AC power control applications

SOLID-STATE ELECTRONICS, 42(4), 573–579.

By: M. Mehrotra n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

APPLIED PHYSICS LETTERS, 72(24), 3196–3198.

By: R. Raghunathan n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1998 patent

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: S. Sridevan, P. McLarty & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Static-induction transistors having heterojunction gates and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: N. Thapar, P. Shenoy & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

The dV/dt capability of MOS-gated thyristors

IEEE TRANSACTIONS ON POWER ELECTRONICS, 13(4), 660–666.

By: P. Venkataraghavan n & B. Baliga n

author keywords: MOS gate; switching; thyristors
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Analysis of on-state carrier distribution in the DI-LIGBT

SOLID-STATE ELECTRONICS, 41(5), 733–738.

By: R. Sunkavalli* & B. Baliga*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Current saturation mechanism and FBOSA of the SIMEST

SOLID-STATE ELECTRONICS, 41(4), 561–566.

By: S. Sridhar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1997 patent

Depleted base transistor with high forward voltage blocking capability

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & N. Thapar

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2011–2016.

By: R. Sunkavalli n, B. Baliga n & A. Tamba n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes

ELECTRONICS LETTERS, 33(12), 1086–1087.

By: P. Shenoy n & B. Baliga n

author keywords: polysilicon; semiconductor diodes; silicon carbide
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137.

By: D. Alok n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1997 patent

Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Output characteristics of the dual channel EST

SOLID-STATE ELECTRONICS, 41(8), 1133–1138.

By: S. Sridhar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

SIMFCT: A MOS-gated FCT with high voltage-current saturation

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021.

By: S. Sridhar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1997 patent

Schottky barrier rectifiers and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

SiC device edge termination using finite area argon implantation

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017.

By: D. Alok n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

The accumulation channel driven bipolar transistor (ACBT)

IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180.

By: N. Thapar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1997 patent

Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1996 patent

Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Silicon carbide switching device with rectifying-gate

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Emitter switched thyristor without parasitic thyristor latch-up susceptibility

Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

MOS gated thyristor having on-state current saturation capability

Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1993 journal article

COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES

IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(3), 645–655.

By: M. Bhatnagar n & B. Baliga n

Source: Web Of Science
Added: August 6, 2018

1993 patent

Silicon carbide power MOSFET with floating field ring and floating field plate

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1991 patent

Integrated circuit power device with automatic removal of defective devices and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

book

Advanced power MOSFET concepts

Baliga, B. J. New York: Springer.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Asymmetrical field controlled thyristor

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Base resistance controlled thyristor with integrated single-polarity gate control

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Base resistance controlled thyristor with single-polarity turn-on and turn-off control

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Bidirectional AC switching device with MOS-gated turn-on and turn-off control

Mehrotra, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Mehrotra & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Dual-channel emitter switched thyristor with trench gate

Shekar, M. S., Baliga, B. J., & Korec, J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar, B. Baliga & J. Korec

Source: NC State University Libraries
Added: August 6, 2018

patent

Electric field-controlled semiconductor device

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Emitter switched thyristor with buried dielectric layer

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Field-controlled bipolar transistor

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Gate modulated bipolar transistor

Baliga, B. J., Houston, D. E., & Krishna, S. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga, D. Houston & S. Krishna

Source: NC State University Libraries
Added: August 6, 2018

patent

Gated base controlled thyristor

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

High voltage silicon carbide MESFETs and methods of fabricating same

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

chapter

How the super-transistor works

Baliga, B. J. In The solid-state century: The past, present, and future of the transistor (pp. 34–41). New York: Scientific American, Inc.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Integrated circuit power device with external disabling of defective devices and method of fabricating same

Baliga, B. J., & Venkatraman, P. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & P. Venkatraman

Source: NC State University Libraries
Added: August 6, 2018

patent

Integrated circuit power device with transient responsive current limiting means

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Integrated multicelled semiconductor switching device for high current applications

Nandakumar, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Nandakumar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Latch-up resistant bipolar transistor with trench IGFET and buried collector

Baliga, B. J., & Korec, J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & J. Korec

Source: NC State University Libraries
Added: August 6, 2018

patent

MOS gated thyristor with remote turn-off electrode

Shekar, M. S., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Merged P-I-N/Schottky power rectifier having extended P-I-N junction

Tu, S.-H. L., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: S. Tu & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method for forming a p-n junction in silicon carbide

Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga, D. Alok & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Method for forming an oxide-filled trench in silicon carbide

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of fabricating high voltage silicon carbide MESFETs

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of fabricating silicon carbide field effect transistor

Baliga, B. J., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of forming trenches in monocrystalline silicon carbide

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)

Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.

By: W. Sung, K. Han & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

chapter

Power devices

Baliga, B. J. In Modern semiconductor device physics (pp. 183–252). New York: Wiley.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Schottky barrier rectifier including schottky barrier regions of differing barrier heights

Tu, S.-H. L., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: S. Tu & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Schottky barrier rectifier with MOS trench

Mehrotra, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Mehrotra & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Self-protection against breakover turn-on failure in thyristors through selective base lifetime control

Temple, V. A. K., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: V. Temple & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

book

Silicon RF power MOSFETS

Baliga, B. J. Singapore; Hackensack, NJ: World Scientific.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Silicon carbide field effect device

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Silicon carbide field effect transistor

Baliga, B. J., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Trench gate lateral MOSFET

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Unit cell arrangement for emitter switched thyristor with base resistance control

Shekar, M. S., Nandakumar, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar, M. Nandakumar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

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