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2024 article
FET Junction Temperature Monitoring Using Novel On-Chip Solution
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2475–2482.
2024 journal article
Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter
IEEE TRANSACTIONS ON POWER ELECTRONICS, 39(3), 2896–2911.
2023 conference paper
Analysis and Characterization of Four-quadrant Switches based Commutation Cell
2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.
Contributors: R. Narwal n , S. Rawat n, A. Kanale n, T. Cheng n, A. Agarwal n, S. Bhattacharya n , n, D. Hopkins n
Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
2023 article
Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches
2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC.
Contributors: R. Narwal n , S. Bhattacharya n , n & D. Hopkins n
2023 journal article
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application
IEEE ACCESS, 11, 89277–89289.
2023 journal article
Power Conversion Systems Enabled by SiC BiDFET Device
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.
Contributors: S. Bhattacharya n , R. Narwal n , S. Shah*, n, A. Agarwal*, A. Kanale n, K. Han*, D. Hopkins n , T. Cheng n
2023 journal article
Silicon Carbide Power Devices: Progress and Future Outlook
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 11(3), 2400–2411.
2023 journal article
The BiDFET Device and Its Impact on Converters
IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.
Contributors: D. Hopkins n , S. Bhattacharya n , A. Agarwal*, T. Cheng n, R. Narwal n , A. Kanale n, S. Shah, K. Han* n,
2023 book
The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor
(2nd ed.). Amsterdam: Elsevier.
2022 article proceedings
Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems
Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Contributors: A. Kanale n, T. Cheng n, R. Narwal n , A. Agarwal n, n, S. Bhattacharya n , D. Hopkins n
Event: 2022 IEEE Energy Conversion Congress and Exposition (ECCE)
2022 journal article
Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255.
2022 article
Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs
2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).
2022 journal article
Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications
IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.
2022 journal article
Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts
IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241.
2021 journal article
2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.
2021 article
3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry
SOUTHEASTCON 2021, pp. 555–558.
2021 journal article
650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.
2021 journal article
A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.
2021 journal article
Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.
2021 article
Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.
2021 conference paper
Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.
Event: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) at Redondo Beach, CA, USA on November 7-11, 2021
2021 article
Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.
2021 article
High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282.
2021 article
Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications
2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.
Contributors: S. Shah*, R. Narwal* , S. Bhattacharya* , A. Kanale*, T. Cheng*, U. Mehrotra*, A. Agarwal*, *, D. Hopkins*
2021 article
Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.
2021 journal article
Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness
IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.
2021 article
Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.
2021 article
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.
2021 conference paper
Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.
Event: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
2021 journal article
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement
IEEE ACCESS, 9, 70039–70047.
2020 journal article
1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor
IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.
2020 journal article
2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.
2020 article
2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
2020 article
Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).
2020 journal article
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.
2020 journal article
Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies
IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.
2021 journal article
Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.
2020 journal article
Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter
IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.
2020 journal article
Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology
IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.
2019 journal article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V
IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.
2019 article
600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)
Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.
2019 journal article
Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET
IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.
2019 journal article
Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.
2019 journal article
Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.
2019 journal article
Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.
2019 journal article
The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.
2018 conference paper
Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2018-March, 2737–2742.
Contributors: A. Kumar n, S. Parashar n, J. Baliga n & S. Bhattacharya n
2017 journal article
A Comparative Study 4500-V Edge Termination Techniques for SiC Devices
IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(4), 1647–1652.
2018 journal article
A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results
IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251.
2017 conference paper
Applications and characterization of four quadrant GaN switch
2017 ieee energy conversion congress and exposition (ecce), 2017-January, 1967–1974.
Contributors: U. Raheja n, G. Gohil n, K. Han n, S. Acharya n , n, S. Battacharya, M. Labreque*, P. Smith *, R. Lal*
2017 article
Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height
Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.
2017 journal article
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212.
2017 journal article
Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation
IEEE Electron Device Letters, 38(10), 1437–1440.
2016 journal article
A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612.
2016 journal article
Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices
IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.
2016 journal article
Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608.
2016 journal article
Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells
FASEB JOURNAL, 31(1), 346–355.
2016 conference paper
SIC power devices: From conception to social impact (invited paper)
2016 46th european solid-state device research conference (essderc), 192–197.
2015 journal article
Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices
IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596.
2015 conference paper
Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications
2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015, 4151–4158.
Contributors: K. Vechalapu n, A. Tripathi n, K. Mainali n, n & S. Bhattacharya n
2015 conference paper
The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.
Event: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
2014 conference paper
Zero voltage switching characterization of 12 kV SiC N-IGBTs
Proceedings of the international symposium on power semiconductor, 350–353.
2013 review
Gallium nitride devices for power electronic applications
[Review of ]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).
2013 conference paper
Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection
2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.
2013 conference paper
SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension
Proceedings of the international symposium on power semiconductor, 179–182.
2012 journal article
A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.
2012 article
A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.
2012 journal article
Analytical Modeling of IGBTs: Challenges and Solutions
IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 535–543.
2012 journal article
Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices
IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.
2011 journal article
A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension
IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.
2011 journal article
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363.
2011 journal article
Planar Nearly Ideal Edge-Termination Technique for GaN Devices
IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302.
2011 personal communication
Tunneling coefficient for GaN Schottky barrier diodes
Ozbek, A. M., & Baliga, B. J. (2011, August).
2010 conference paper
A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop
Proceedings of the international symposium on power semiconductor, 217–220.
2009 book
Advanced power rectifier concepts
2009 article
Design and investigation of frequency capability of 15kV 4H-SiC IGBT
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274.
2009 article
FREEDM System: Role of Power Electronics and Power Semiconductors in Developing an Energy Internet
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 9–12.
2009 article
RBSOA Study of High Voltage SiC Bipolar Devices
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 263–266.
2009 journal article
Smart Grid Technologies
IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23.
2008 book
Fundamentals of power semiconductor devices
2001 patent
Methods of forming power semiconductor devices having T-shaped gate electrodes
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
Washington, DC: U.S. Patent and Trademark Office.
2001 journal article
The future of power semiconductor device technology
PROCEEDINGS OF THE IEEE, 89(6), 822–832.
2000 patent
Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
Washington, DC: U.S. Patent and Trademark Office.
2000 journal article
Current saturation control in silicon emitter switched thyristors
SOLID-STATE ELECTRONICS, 44(1), 133–142.
2000 patent
Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages
Washington, DC: U.S. Patent and Trademark Office.
2000 journal article
Silicon planar ACCUFET: improved power MOSFET structure
ELECTRONICS LETTERS, 36(10), 913–915.
1999 journal article
An experimental analysis of the dual gate emitter switched thyristor (DG-EST)
SOLID-STATE ELECTRONICS, 43(10), 1901–1908.
1999 journal article
Analysis and optimization of the planar 6H-SiC ACCUFET
SOLID-STATE ELECTRONICS, 43(2), 213–220.
1999 journal article
Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor
SOLID-STATE ELECTRONICS, 43(2), 395–402.
1999 article
High-temperature operation of SiC planar ACCUFET
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 35, pp. 1458–1462.
1999 patent
Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
Washington, DC: U.S. Patent and Trademark Office.
1999 journal article
Modeling the [dV/dt] of the IGBT during inductive turn off
IEEE TRANSACTIONS ON POWER ELECTRONICS, 14(4), 601–606.
1999 patent
Power semiconductor devices having improved high frequency switching and breakdown characteristics
Washington, DC: U.S. Patent and Trademark Office.
1999 patent
Power semiconductor devices having trench-based gate electrodes and field plates
Washington, DC: U.S. Patent and Trademark Office.
1999 patent
Semiconductor switching devices having buried gate electrodes and methods of forming same
Washington, DC: U.S. Patent and Trademark Office.
1999 journal article
SiC promises higher power MOS devices
Electronic Design, 47(24), 27.
1999 journal article
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
SOLID-STATE ELECTRONICS, 43(2), 199–211.
1999 journal article
The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier
SOLID-STATE ELECTRONICS, 43(1), 1–9.
1998 journal article
An experimental evaluation of the on-state performance of trench IGBT designs
SOLID-STATE ELECTRONICS, 42(5), 771–776.
1998 journal article
Analysis and suppression of latch-up during IGBT mode of DG-BRT operation
SOLID-STATE ELECTRONICS, 42(3), 393–399.
1998 journal article
Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices
SOLID-STATE ELECTRONICS, 42(11), 1975–1979.
1998 book
Cryogenic operation of silicon power devices
1998 journal article
Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT
IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155–1161.
1998 journal article
Improved DC-EST structure with diode diverter
ELECTRONICS LETTERS, 34(13), 1358–1360.
1998 journal article
Lateral N-channel inversion mode 4H-SiC MOSFET's
IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230.
1998 journal article
P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73.
1998 journal article
Reverse blocking lateral MOS-gated switches for AC power control applications
SOLID-STATE ELECTRONICS, 42(4), 573–579.
1998 journal article
Role of defects in producing negative temperature dependence of breakdown voltage in SiC
APPLIED PHYSICS LETTERS, 72(24), 3196–3198.
1998 patent
Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
Washington, DC: U.S. Patent and Trademark Office.
1998 patent
Static-induction transistors having heterojunction gates and methods of forming same
Washington, DC: U.S. Patent and Trademark Office.
1998 journal article
The dV/dt capability of MOS-gated thyristors
IEEE TRANSACTIONS ON POWER ELECTRONICS, 13(4), 660–666.
1997 journal article
Analysis of on-state carrier distribution in the DI-LIGBT
SOLID-STATE ELECTRONICS, 41(5), 733–738.
1997 journal article
Current saturation mechanism and FBOSA of the SIMEST
SOLID-STATE ELECTRONICS, 41(4), 561–566.
1997 patent
Depleted base transistor with high forward voltage blocking capability
Washington, DC: U.S. Patent and Trademark Office.
1997 journal article
Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2011–2016.
1997 journal article
High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes
ELECTRONICS LETTERS, 33(12), 1086–1087.
1997 journal article
Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137.
1997 patent
Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Washington, DC: U.S. Patent and Trademark Office.
1997 patent
Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
Washington, DC: U.S. Patent and Trademark Office.
1997 journal article
Output characteristics of the dual channel EST
SOLID-STATE ELECTRONICS, 41(8), 1133–1138.
1997 journal article
SIMFCT: A MOS-gated FCT with high voltage-current saturation
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2017–2021.
1997 patent
Schottky barrier rectifiers and methods of forming same
Washington, DC: U.S. Patent and Trademark Office.
1997 journal article
SiC device edge termination using finite area argon implantation
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017.
1997 journal article
The accumulation channel driven bipolar transistor (ACBT)
IEEE ELECTRON DEVICE LETTERS, 18(5), 178–180.
1997 patent
Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
Washington, DC: U.S. Patent and Trademark Office.
1996 patent
Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
Washington, DC: U.S. Patent and Trademark Office.
1995 patent
Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up
Washington, DC: U.S. Patent and Trademark Office.
1995 patent
Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same
Washington, DC: U.S. Patent and Trademark Office.
1995 patent
Silicon carbide switching device with rectifying-gate
Washington, DC: U.S. Patent and Trademark Office.
1994 patent
Emitter switched thyristor without parasitic thyristor latch-up susceptibility
Washington, DC: U.S. Patent and Trademark Office.
1994 patent
MOS gated thyristor having on-state current saturation capability
Washington, DC: U.S. Patent and Trademark Office.
1993 journal article
COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES
IEEE TRANSACTIONS ON ELECTRON DEVICES, 40(3), 645–655.
1993 patent
Silicon carbide power MOSFET with floating field ring and floating field plate
Washington, DC: U.S. Patent and Trademark Office.
1991 patent
Integrated circuit power device with automatic removal of defective devices and method of fabricating same
Washington, DC: U.S. Patent and Trademark Office.
book
Advanced power MOSFET concepts
Baliga, B. J. New York: Springer.
patent
Asymmetrical field controlled thyristor
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Base resistance controlled thyristor with integrated single-polarity gate control
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Base resistance controlled thyristor with single-polarity turn-on and turn-off control
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Bidirectional AC switching device with MOS-gated turn-on and turn-off control
Mehrotra, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Dual-channel emitter switched thyristor with trench gate
Shekar, M. S., Baliga, B. J., & Korec, J. Washington, DC: U.S. Patent and Trademark Office.
patent
Electric field-controlled semiconductor device
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Emitter switched thyristor with buried dielectric layer
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Field-controlled bipolar transistor
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Gate modulated bipolar transistor
Baliga, B. J., Houston, D. E., & Krishna, S. Washington, DC: U.S. Patent and Trademark Office.
patent
Gated base controlled thyristor
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
High voltage silicon carbide MESFETs and methods of fabricating same
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
chapter
How the super-transistor works
Baliga, B. J. In The solid-state century: The past, present, and future of the transistor (pp. 34–41). New York: Scientific American, Inc.
patent
Integrated circuit power device with external disabling of defective devices and method of fabricating same
Baliga, B. J., & Venkatraman, P. Washington, DC: U.S. Patent and Trademark Office.
patent
Integrated circuit power device with transient responsive current limiting means
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Integrated multicelled semiconductor switching device for high current applications
Nandakumar, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Latch-up resistant bipolar transistor with trench IGFET and buried collector
Baliga, B. J., & Korec, J. Washington, DC: U.S. Patent and Trademark Office.
patent
MOS gated thyristor with remote turn-off electrode
Shekar, M. S., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Merged P-I-N/Schottky power rectifier having extended P-I-N junction
Tu, S.-H. L., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Method for forming a p-n junction in silicon carbide
Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.
patent
Method for forming an oxide-filled trench in silicon carbide
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Method of fabricating high voltage silicon carbide MESFETs
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Method of fabricating silicon carbide field effect transistor
Baliga, B. J., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.
patent
Method of forming trenches in monocrystalline silicon carbide
Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.
conference paper
Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)
Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.
chapter
Power devices
Baliga, B. J. In Modern semiconductor device physics (pp. 183–252). New York: Wiley.
patent
Schottky barrier rectifier including schottky barrier regions of differing barrier heights
Tu, S.-H. L., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Schottky barrier rectifier with MOS trench
Mehrotra, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
Temple, V. A. K., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
book
Silicon RF power MOSFETS
Baliga, B. J. Singapore; Hackensack, NJ: World Scientific.
patent
Silicon carbide field effect device
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Silicon carbide field effect transistor
Baliga, B. J., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.
patent
Trench gate lateral MOSFET
Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Unit cell arrangement for emitter switched thyristor with base resistance control
Shekar, M. S., Nandakumar, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.
patent
Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.
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