Works (134)

2020 journal article

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.

By: K. Han & B. Baliga

Source: Web Of Science
Added: April 6, 2020

2020 journal article

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 22, 2020

2020 article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

By: A. Agarwal, K. Han & B. Jayant Baliga

Source: Web Of Science
Added: February 3, 2020

2020 journal article

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

By: A. Kanale & B. Baliga

Source: Web Of Science
Added: August 17, 2020

2019 journal article

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: December 2, 2019

2019 journal article

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.

By: K. Han & B. Baliga

Source: Web Of Science
Added: July 22, 2019

2019 journal article

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.

By: K. Han & B. Baliga

Source: Web Of Science
Added: June 17, 2019

2019 journal article

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.

By: K. Han & B. Baliga

Source: Web Of Science
Added: September 16, 2019

2019 journal article

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

By: A. Agarwal, K. Han & B. Baliga

Source: Web Of Science
Added: June 4, 2019

2019 journal article

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.

By: K. Han & B. Baliga

Source: NC State University Libraries
Added: February 18, 2019

2018 journal article

A novel 1.2 kV 4H-SiC buffered-gate (BG) MOSFET: Analysis and experimental results

IEEE Electron Device Letters, 39(2), 248–251.

By: K. Han, B. Baliga & W. Sung

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height

Journal of Electronic Materials, 47(2), 927–931.

By: Y. Jiang, W. Sung, J. Baliga, S. Wang, B. Lee & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2018 conference paper

Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs

Thirty-third annual ieee applied power electronics conference and exposition (apec 2018), 2737–2742.

Source: NC State University Libraries
Added: August 6, 2018

2017 journal article

A comparative study 4500-V edge termination techniques for SiC devices

IEEE Transactions on Electron Devices, 64(4), 1647–1652.

By: W. Sung & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2017 conference paper

Applications and characterization of four quadrant GaN switch

2017 ieee energy conversion congress and exposition (ecce), 1967–1974.

By: U. Raheja, G. Gohil, K. Han, S. Acharya, B. Baliga, S. Battacharya, M. Labreque, P. Smith, R. Lal

Source: NC State University Libraries
Added: August 6, 2018

2017 journal article

On developing one-chip integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

IEEE Transactions on Industrial Electronics, 64(10), 8206–8212.

By: W. Sung & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2017 journal article

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB Journal, 31(1), 346–355.

By: S. Cai, J. Bodle, P. Mathieu, A. Amos, M. Hamouda, S. Bernacki, G. McCarty, E. Loboa

Source: NC State University Libraries
Added: August 6, 2018

2017 journal article

Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation

IEEE Electron Device Letters, 38(10), 1437–1440.

By: K. Han, B. Baliga & W. Sung

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

A Near Ideal edge termination technique for 4500V 4H-SiC devices: The hybrid junction termination extension

IEEE Electron Device Letters, 37(12), 1609–1612.

By: W. Sung & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Area-efficient bevel-edge termination techniques for SiC high-voltage devices

IEEE Transactions on Electron Devices, 63(4), 1630–1636.

By: W. Sung, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Monolithically integrated 4H-SiC MOSFET and JBS diode (JBSFET) using a single Ohmic/Schottky process scheme

IEEE Electron Device Letters, 37(12), 1605–1608.

By: W. Sung & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

SIC power devices: From conception to social impact (invited paper)

2016 46th european solid-state device research conference (essderc), 192–197.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Bevel junction termination extension-A new edge termination technique for 4H-SiC high-voltage devices

IEEE Electron Device Letters, 36(6), 594–596.

By: W. Sung, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications

2015 ieee energy conversion congress and exposition (ecce), 4151–4158.

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

Proceedings of the international symposium on power semiconductor, 257–260.

By: W. Sung, A. Huang, B. Baliga, I. Ji, H. Ke & D. Hopkins

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

Zero voltage switching characterization of 12 kV SiC N-IGBTs

Proceedings of the international symposium on power semiconductor, 350–353.

By: A. Kadavelugu, S. Bhattcharya, B. Baliga, S. Ryu, D. Grider & J. Palmour

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Analytical modeling of IGBTs: Challenges and solutions

IEEE Transactions on Electron Devices, 60(2), 535–543.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2013 review

Gallium nitride devices for power electronic applications

[Review of ]. Semiconductor Science and Technology, 28(7).

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.

By: X. Huang, G. Wang, Y. Li, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension

Proceedings of the international symposium on power semiconductor, 179–182.

By: X. Huang, B. Baliga, A. Huang, A. Suvorov, C. Capell, L. Cheng, A. Agarwal

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

A Comparative study of gate structures for 9.4-kV4H-SiC normally on vertical JFETs

IEEE Transactions on Electron Devices, 59(9), 2417–2423.

By: W. Sung, E. Van Brunt, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

A Novel 4H-SiC fault isolation device with improved trade-off between on-state voltage drop and short circuit SOA

Silicon carbide and related materials 2011, pts 1 and 2, 717-720, 1045–1048.

By: W. Sung, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Orthogonal positive-bevel termination for chip-size SiC reverse blocking devices

IEEE Electron Device Letters, 33(11), 1592–1594.

By: X. Huang, E. Van Brunt, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

A new edge termination technique for high-voltage devices in 4H-SiC-multiple-floating-zone junction termination extension

IEEE Electron Device Letters, 32(7), 880–882.

By: W. Sung, E. Van Brunt, B. Baliga & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Planar nearly ideal edge-termination technique for GaN devices

IEEE Electron Device Letters, 32(3), 300–302.

By: A. Ozbek & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2011 personal communication

Tunneling coefficient for GaN Schottky barrier diodes

By: A. Ozbek & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

finite-zone argon implant edge termination for high-voltage GaN Schottky rectifiers

IEEE Electron Device Letters, 32(10), 1361–1363.

By: A. Ozbek & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Proceedings of the international symposium on power semiconductor, 217–220.

By: W. Sung, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 book

Advanced power rectifier concepts

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

Design and investigation of frequency capability of 15kV 4H-SiC IGBT

Proceedings of the international symposium on power semiconductor, 271–274.

By: W. Sung, J. Wang, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

FREEDM system: Role of power electronics and power semiconductors in developing an energy internet

Proceedings of the international symposium on power semiconductor, 9–12.

By: A. Huang & J. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 conference paper

RBSOA Study of High Voltage SiC Bipolar Devices

Proceedings of the international symposium on power semiconductor, 263–266.

By: J. Wang, A. Huang & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Smart grid technologies

IEEE Industrial Electronics Magazine, 3(2), 16–23.

Source: NC State University Libraries
Added: August 6, 2018

2008 book

Fundamentals of power semiconductor devices

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of forming power semiconductor devices having T-shaped gate electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

The future of power semiconductor device technology

Proceedings of the IEEE, 89(6), 822–832.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Current saturation control in silicon emitter switched thyristors

Solid-State Electronics, 44(1), 133–142.

By: S. Sawant & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2000 patent

Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Silicon planar ACCUFET: improved power MOSFET structure

Electronics Letters, 36(10), 913–915.

By: M. Bobde & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

Solid-State Electronics, 43(10), 1901–1908.

By: S. Sawant, S. Sridhar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Analysis and optimization of the planar 6H-SiC ACCUFET

Solid-State Electronics, 43(2), 213–220.

By: P. Shenoy & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor

Solid-State Electronics, 43(2), 395–402.

By: N. Thapar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

High-temperature operation of SiC planar ACCUFET

IEEE Transactions on Industry Applications, 35(6), 1458–1462.

By: R. Chilukuri, P. Shenoy & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Modeling the [dV/dt] of the IGBT during inductive turn off

IEEE Transactions on Power Electronics, 14(4), 601–606.

By: A. Ramamurthy, S. Sawant & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

Power semiconductor devices having improved high frequency switching and breakdown characteristics

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

Power semiconductor devices having trench-based gate electrodes and field plates

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 patent

Semiconductor switching devices having buried gate electrodes and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

SiC promises higher power MOS devices

Electronic Design, 47(24), 27.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Temperature dependence of hole impact ionization coefficientsin 4H and 6H-SiC

Solid-State Electronics, 43(2), 199–211.

By: R. Raghunathan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

Solid-State Electronics, 43(1), 1–9.

By: S. Mahalingam & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

An experimental evaluation of the on-state performance of trench IGBT designs

Solid-State Electronics, 42(5), 771–776.

By: N. Thapar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Analysis and suppression of latch-up during IGBT mode of DG-BRT operation

Solid-State Electronics, 42(3), 393–399.

By: T. Yamazaki & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

Solid-State Electronics, 42(11), 1975–1979.

By: N. Thapar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 book

Cryogenic operation of silicon power devices

By: R. Singh & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

IEEE Transactions on Electron Devices, 45(5), 1155–1161.

By: V. Nagapudi, R. Sunkavalli & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Improved DC-EST structure with diode diverter

Electronics Letters, 34(13), 1358–1360.

By: S. Sawant & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Lateral N-channel inversion mode 4H-SiC MOSFET's

IEEE Electron Device Letters, 19(7), 228–230.

By: S. Sridevan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

IEEE Electron Device Letters, 19(3), 71–73.

By: R. Raghunathan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Reverse blocking lateral MOS-gated switches for AC power control applications

Solid-State Electronics, 42(4), 573–579.

By: M. Mehrotra & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

Applied Physics Letters, 72(24), 3196–3198.

By: R. Raghunathan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: S. Sridevan, P. McLarty & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Static-induction transistors having heterojunction gates and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: N. Thapar, P. Shenoy & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

The dV/dt capability of MOS-gated thyristors

IEEE Transactions on Power Electronics, 13(4), 660–666.

By: P. Venkataraghavan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Analysis of on-state carrier distribution in the di-ligbt

Solid-State Electronics, 41(5), 733–738.

By: R. Sunkavalli & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Current saturation mechanism and FBSOA of the simest

Solid-State Electronics, 41(4), 561–566.

By: S. Sridhar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Depleted base transistor with high forward voltage blocking capability

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & N. Thapar

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes

IEEE Transactions on Electron Devices, 44(11), 2011–2016.

By: R. Sunkavalli, B. Baliga & A. Tamba

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes

Electronics Letters, 33(12), 1086–1087.

By: P. Shenoy & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation

Journal of the Electrochemical Society, 144(3), 1135–1137.

By: D. Alok & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Output characteristics of the dual channel EST

Solid-State Electronics, 41(8), 1133–1138.

By: S. Sridhar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

SIC device edge termination using finite area argon implantation

IEEE Transactions on Electron Devices, 44(6), 1013–1017.

By: D. Alok & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

SIMFCT: A MOS-gated FCT with high voltage-current saturation

IEEE Transactions on Electron Devices, 44(11), 2017–2021.

By: S. Sridhar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Schottky barrier rectifiers and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The accumulation channel driven bipolar transistor (acbt)

IEEE Electron Device Letters, 18(5), 178–180.

By: N. Thapar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1996 patent

Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Multifunctional semiconductor switching device having gate-controlled regenerative and non-regenerative conduction modes, and method of operating same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Silicon carbide switching device with rectifying-gate

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Emitter switched thyristor without parasitic thyristor latch-up susceptibility

Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

MOS gated thyristor having on-state current saturation capability

Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1993 journal article

Comparison of 6h-sic, 3c-sic, and si for power devices

IEEE Transactions on Electron Devices, 40(3), 645–655.

By: M. Bhatnagar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1993 patent

Silicon carbide power MOSFET with floating field ring and floating field plate

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1991 patent

Integrated circuit power device with automatic removal of defective devices and method of fabricating same

Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

book

Advanced power MOSFET concepts

Baliga, B. J. New York: Springer.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Asymmetrical field controlled thyristor

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Base resistance controlled thyristor with integrated single-polarity gate control

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Base resistance controlled thyristor with single-polarity turn-on and turn-off control

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Bidirectional AC switching device with MOS-gated turn-on and turn-off control

Mehrotra, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Mehrotra & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Dual-channel emitter switched thyristor with trench gate

Shekar, M. S., Baliga, B. J., & Korec, J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar, B. Baliga & J. Korec

Source: NC State University Libraries
Added: August 6, 2018

patent

Electric field-controlled semiconductor device

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Emitter switched thyristor with buried dielectric layer

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Field-controlled bipolar transistor

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Gate modulated bipolar transistor

Baliga, B. J., Houston, D. E., & Krishna, S. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga, D. Houston & S. Krishna

Source: NC State University Libraries
Added: August 6, 2018

patent

Gated base controlled thyristor

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

High voltage silicon carbide MESFETs and methods of fabricating same

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

chapter

How the super-transistor works

Baliga, B. J. In The solid-state century: The past, present, and future of the transistor (pp. 34–41). New York: Scientific American, Inc.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Integrated circuit power device with external disabling of defective devices and method of fabricating same

Baliga, B. J., & Venkatraman, P. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & P. Venkatraman

Source: NC State University Libraries
Added: August 6, 2018

patent

Integrated circuit power device with transient responsive current limiting means

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Integrated multicelled semiconductor switching device for high current applications

Nandakumar, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Nandakumar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Latch-up resistant bipolar transistor with trench IGFET and buried collector

Baliga, B. J., & Korec, J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & J. Korec

Source: NC State University Libraries
Added: August 6, 2018

patent

MOS gated thyristor with remote turn-off electrode

Shekar, M. S., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Merged P-I-N/Schottky power rectifier having extended P-I-N junction

Tu, S.-H. L., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: S. Tu & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method for forming a p-n junction in silicon carbide

Baliga, B. J., Alok, D., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga, D. Alok & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Method for forming an oxide-filled trench in silicon carbide

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of fabricating high voltage silicon carbide MESFETs

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of fabricating silicon carbide field effect transistor

Baliga, B. J., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Method of forming trenches in monocrystalline silicon carbide

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018

conference paper

Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)

Sung, W. J., Han, K. J., & Baliga, B. J. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 238–241.

By: W. Sung, K. Han & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

chapter

Power devices

Baliga, B. J. In Modern semiconductor device physics (pp. 183–252). New York: Wiley.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Schottky barrier rectifier including schottky barrier regions of differing barrier heights

Tu, S.-H. L., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: S. Tu & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Schottky barrier rectifier with MOS trench

Mehrotra, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Mehrotra & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Self-protection against breakover turn-on failure in thyristors through selective base lifetime control

Temple, V. A. K., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: V. Temple & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

book

Silicon RF power MOSFETS

Baliga, B. J. Singapore; Hackensack, NJ: World Scientific.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Silicon carbide field effect device

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Silicon carbide field effect transistor

Baliga, B. J., & Bhatnagar, M. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & M. Bhatnagar

Source: NC State University Libraries
Added: August 6, 2018

patent

Trench gate lateral MOSFET

Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Unit cell arrangement for emitter switched thyristor with base resistance control

Shekar, M. S., Nandakumar, M., & Baliga, B. J. Washington, DC: U.S. Patent and Trademark Office.

By: M. Shekar, M. Nandakumar & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

patent

Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Baliga, B. J., & Alok, D. Washington, DC: U.S. Patent and Trademark Office.

By: B. Baliga & D. Alok

Source: NC State University Libraries
Added: August 6, 2018