Bantval Jayant Baliga

Dynamic Voltage Balancing Across Series-Connected 10 kV SiC JBS Diodes in Medium Voltage 3L-NPC Power Converter Having Snubberless Series-Connected 10 kV SiC MOSFETs

IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY, 5, 1058–1084.

FET Junction Temperature Monitoring Using Novel On-Chip Solution

2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 2475–2482.

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2023-March, 209–216.

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC.

Mitigating Voltage Imbalance Across Series-Connected 10 kV SiC JBS Diodes in a Medium-Voltage High-Power 3L-NPC Converter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 39(3), 2896–2911.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

IEEE ACCESS, 11, 89277–89289.

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

Silicon Carbide Power Devices: Progress and Future Outlook

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 11(3), 2400–2411.

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor

(2nd ed.). Amsterdam: Elsevier.

Design Considerations for Developing 1.2 kV 4H-SiC BiDFET-enabled Power Conversion Systems

Presented at the 2022 IEEE Energy Conversion Congress and Exposition (ECCE).

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 245–255.

Influence of the Inverter Dead-time on the Reverse Recovery Characteristics of 3.3-kV SiC MOSFETs and JBSFETs

2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE).

Monolithic Reverse Blocking 1.2 kV 4H-SiC Power Transistor: A Novel, Single-Chip, Three-Terminal Device for Current Source Inverter Applications

IEEE TRANSACTIONS ON POWER ELECTRONICS, 37(9), 10112–10116.

Temperature Dependence of 55 nm Gate Oxide, 2.3 kV SiC Power JBSFETs With Linear, Hexagonal, and Octagonal Cell Layouts

IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(3), 1233–1241.

2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 324–333.

3.3 kV 4H-SiC Planar-Gate MOSFETs Manufactured using Gen-5 PRESiCE (TM) Technology in a 4-inch Wafer Commercial Foundry

SOUTHEASTCON 2021, pp. 555–558.

650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(5), 2395–2400.

Comparison of BaSIC(DMM) and BaSIC(EMM) Topologies to Enhance Short-Circuit Capability in SiC Power MOSFETs

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1275–1281.

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 112–117.

Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 14–17.

High Voltage Output Characteristics and Short Circuit Robustness of HV SiC MOSFETs

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 5277–5282.

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

2021 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), pp. 568–575.

Performance Comparison and Demonstration of 3-L Voltage Source Inverters Using 3.3 kV SiC MOSFETs for 2.3 kV High Speed Induction Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1103–1110.

Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness

IEEE TRANSACTIONS ON ELECTRON DEVICES, 68(10), 5029–5033.

Performance Evaluation of 10 kV SiC Current Switch Based PWM Current Source Inverter for 4.16 kV Motor Drive Applications

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), pp. 1219–1226.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 366–371.

Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 1267–1274.

Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement

IEEE ACCESS, 9, 70039–70047.

1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor

IEEE ELECTRON DEVICE LETTERS, 41(3), 437–440.

2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 8(1), 499–504.

2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

A New User-Configurable Method to Improve Short-Circuit Ruggedness of 1.2-kV SiC Power MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(2), 2059–2067.

Achieving Short Circuit Capability for 600 V GaN FETs Using a Gate-Source-Shorted Si Depletion-Mode MOSFET in Series with the Source

2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA).

Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(3), 3335–3345.

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, 79–88.

Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(9), 3673–3678.

Eliminating Repetitive Short-Circuit Degradation and Failure of 1.2-kV SiC Power MOSFETs

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 9(6), 6773–6779.

Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology

IEEE TRANSACTIONS ON POWER ELECTRONICS, 36(7), 8243–8252.

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V

IEEE ELECTRON DEVICE LETTERS, 40(11), 1792–1795.

600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V (vol 40, pg 1792, 2019)

Agarwal, A., Han, K., & Jayant Baliga, B. (2020, January). IEEE ELECTRON DEVICE LETTERS, Vol. 41, pp. 195–195.

Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET

IEEE ELECTRON DEVICE LETTERS, 40(7), 1163–1166.

Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(5), 2321–2326.

Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(9), 3923–3928.

Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter

IEEE TRANSACTIONS ON POWER ELECTRONICS, 35(6), 6350–6361.

Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs

IEEE ELECTRON DEVICE LETTERS, 40(5), 773–776.

Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, 2018-March, 2737–2742.

The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit

IEEE ELECTRON DEVICE LETTERS, 40(2), 299–302.

A Comparative Study 4500-V Edge Termination Techniques for SiC Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(4), 1647–1652.

A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

IEEE ELECTRON DEVICE LETTERS, 39(2), 248–251.

Applications and characterization of four quadrant GaN switch

2017 ieee energy conversion congress and exposition (ecce), 2017-January, 1967–1974.

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 64(10), 8206–8212.

Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation

IEEE Electron Device Letters, 38(10), 1437–1440.

A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 37(12), 1609–1612.

Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(4), 1630–1636.

Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme

IEEE ELECTRON DEVICE LETTERS, 37(12), 1605–1608.

Primary cilia are sensors of electrical field stimulation to induce osteogenesis of human adipose-derived stem cells

FASEB JOURNAL, 31(1), 346–355.

SIC power devices: From conception to social impact (invited paper)

2016 46th european solid-state device research conference (essderc), 192–197.

Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices

IEEE ELECTRON DEVICE LETTERS, 36(6), 594–596.

Soft switching characterization of 15 kV SiC n-IGBT and performance evaluation for high power converter applications

2015 IEEE Energy Conversion Congress and Exposition, ECCE 2015, 4151–4158.

The first demonstration of symmetric blocking SiC gate turn-off (GTO) thyristor

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 257–260.

Zero voltage switching characterization of 12 kV SiC N-IGBTs

Proceedings of the international symposium on power semiconductor, 350–353.

Gallium nitride devices for power electronic applications

[Review of ]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

2013 twenty-eighth annual ieee applied power electronics conference and exposition (apec 2013), 197–200.

SiC Symmetric Blocking Terminations Using Orthogonal Positive Bevel Termination and Junction Termination Extension

Proceedings of the international symposium on power semiconductor, 179–182.

A Comparative Study of Gate Structures for 9.4-kV4H-SiC Normally On Vertical JFETs

IEEE TRANSACTIONS ON ELECTRON DEVICES, 59(9), 2417–2423.

A Novel 4H-SiC Fault Isolation Device with Improved Trade-off between On-state Voltage Drop and Short Circuit SOA

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, Vol. 717-720, pp. 1045–1048.

Analytical Modeling of IGBTs: Challenges and Solutions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 535–543.

Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices

IEEE ELECTRON DEVICE LETTERS, 33(11), 1592–1594.

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC-Multiple-Floating-Zone Junction Termination Extension

IEEE ELECTRON DEVICE LETTERS, 32(7), 880–882.

Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

IEEE ELECTRON DEVICE LETTERS, 32(10), 1361–1363.

Planar Nearly Ideal Edge-Termination Technique for GaN Devices

IEEE ELECTRON DEVICE LETTERS, 32(3), 300–302.

Tunneling coefficient for GaN Schottky barrier diodes

Ozbek, A. M., & Baliga, B. J. (2011, August).

A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Proceedings of the international symposium on power semiconductor, 217–220.

Advanced power rectifier concepts

Design and investigation of frequency capability of 15kV 4H-SiC IGBT

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 271–274.

FREEDM System: Role of Power Electronics and Power Semiconductors in Developing an Energy Internet

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 9–12.

RBSOA Study of High Voltage SiC Bipolar Devices

2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, pp. 263–266.

Smart Grid Technologies

IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 3(2), 16–23.

Fundamentals of power semiconductor devices

Methods of forming power semiconductor devices having T-shaped gate electrodes

Washington, DC: U.S. Patent and Trademark Office.

Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein

Washington, DC: U.S. Patent and Trademark Office.

The future of power semiconductor device technology

PROCEEDINGS OF THE IEEE, 89(6), 822–832.

Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability

Washington, DC: U.S. Patent and Trademark Office.

Current saturation control in silicon emitter switched thyristors

SOLID-STATE ELECTRONICS, 44(1), 133–142.

Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages

Washington, DC: U.S. Patent and Trademark Office.

Silicon planar ACCUFET: improved power MOSFET structure

ELECTRONICS LETTERS, 36(10), 913–915.

An experimental analysis of the dual gate emitter switched thyristor (DG-EST)

SOLID-STATE ELECTRONICS, 43(10), 1901–1908.

Analysis and optimization of the planar 6H-SiC ACCUFET

SOLID-STATE ELECTRONICS, 43(2), 213–220.

Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor

SOLID-STATE ELECTRONICS, 43(2), 395–402.

High-temperature operation of SiC planar ACCUFET

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 35, pp. 1458–1462.

Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

Washington, DC: U.S. Patent and Trademark Office.

Modeling the [dV/dt] of the IGBT during inductive turn off

IEEE TRANSACTIONS ON POWER ELECTRONICS, 14(4), 601–606.

Power semiconductor devices having improved high frequency switching and breakdown characteristics

Washington, DC: U.S. Patent and Trademark Office.

Power semiconductor devices having trench-based gate electrodes and field plates

Washington, DC: U.S. Patent and Trademark Office.

Semiconductor switching devices having buried gate electrodes and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

SiC promises higher power MOS devices

Electronic Design, 47(24), 27.

Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC

SOLID-STATE ELECTRONICS, 43(2), 199–211.

The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier

SOLID-STATE ELECTRONICS, 43(1), 1–9.

An experimental evaluation of the on-state performance of trench IGBT designs

SOLID-STATE ELECTRONICS, 42(5), 771–776.

Analysis and suppression of latch-up during IGBT mode of DG-BRT operation

SOLID-STATE ELECTRONICS, 42(3), 393–399.

Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

SOLID-STATE ELECTRONICS, 42(11), 1975–1979.

Cryogenic operation of silicon power devices

Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155–1161.

Improved DC-EST structure with diode diverter

ELECTRONICS LETTERS, 34(13), 1358–1360.

Lateral N-channel inversion mode 4H-SiC MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230.

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73.

Reverse blocking lateral MOS-gated switches for AC power control applications

SOLID-STATE ELECTRONICS, 42(4), 573–579.

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

APPLIED PHYSICS LETTERS, 72(24), 3196–3198.

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

Static-induction transistors having heterojunction gates and methods of forming same

Washington, DC: U.S. Patent and Trademark Office.

The dV/dt capability of MOS-gated thyristors

IEEE TRANSACTIONS ON POWER ELECTRONICS, 13(4), 660–666.

Analysis of on-state carrier distribution in the DI-LIGBT

SOLID-STATE ELECTRONICS, 41(5), 733–738.

Current saturation mechanism and FBOSA of the SIMEST

SOLID-STATE ELECTRONICS, 41(4), 561–566.

Depleted base transistor with high forward voltage blocking capability

Washington, DC: U.S. Patent and Trademark Office.

Dielectrically isolated lateral merged PiN Schottky (LMPS) diodes

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(11), 2011–2016.

High voltage P+ polysilicon/N- 6H-SiC heterojunction diodes

ELECTRONICS LETTERS, 33(12), 1086–1087.

Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137.