Works (58)

Updated: February 14th, 2024 05:00

2023 article

Performance of A Monolithic E-Nose Array Integrating MEMS and ALD Processing

2023 IEEE SENSORS.

By: Y. Zhou n, J. Dieffenderfer n, E. Sennik n, M. Aleem n, J. Speight n, S. Vasisht n, O. Oralkan n, B. Lee*, V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Gas Sensor; ALD; Metal Oxide; MOx; E-Nose; Monolithic Array; VOC; Nitrogen Dioxide; Carbon Monoxide; Ethanol; Mixture; MEMS; BEOL; Microheater; Dry Etching; SnO2
Sources: Web Of Science, ORCID
Added: February 12, 2024

2022 article

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

2022 IEEE 65TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS 2022).

By: H. Zhang*, T. Liu*, U. Gupta*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, A. Agarwal*, A. Fayed*

co-author countries: United States of America 🇺🇸
author keywords: Half-Bridge Power Stage; SiC Integrated Circuits; SiC Gate-Drivers
Source: Web Of Science
Added: October 17, 2022

2022 journal article

A Wearable Electrocardiography Armband Resilient Against Artifacts

IEEE SENSORS JOURNAL, 22(19), 18970–18977.

By: Y. Zhou n, F. Mohaddes n, C. Lee n, S. Rao n, A. Mills n, A. Curry n, B. Lee n, V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Biomedical monitoring; body sensor; electrocardiography (ECG); electrodes; electronic textiles (E-textiles); sensors; wearable sensor
Sources: Web Of Science, ORCID
Added: October 1, 2022

2022 article

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS).

By: E. Ashik n, S. Isukapati*, H. Zhang*, T. Liu*, U. Gupta*, A. Morgan*, V. Misra n, W. Sung* ...

co-author countries: United States of America 🇺🇸
author keywords: CMOS; reliability; field-effect mobility; threshold voltage; transconductance
Sources: Web Of Science, ORCID
Added: February 27, 2023

2022 journal article

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.

By: T. Liu*, H. Zhang*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, A. Fayed*, M. White*, A. Agarwal*

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; MOSFET; Integrated circuits; Semiconductor device modeling; SPICE; Integrated circuit modeling; Silicon; SiC MOSFETs; CMOS circuits; smart power IC; SPICE modeling; trapped interface charges
Source: Web Of Science
Added: March 14, 2022

2021 article

Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 118–122.

By: S. Isukapati*, A. Morgan*, W. Sung*, H. Zhang*, T. Liu*, A. Fayed*, A. Agarwal*, E. Ashik n, B. Lee n

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; lateral MOSFET; RESURF; CMOS; Power IC
Source: Web Of Science
Added: May 10, 2022

2021 article

Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers

2021 IEEE SENSORS.

By: T. Latif n, J. Dieffenderfer n, A. Tanneeru n, B. Lee n, V. Misra n & A. Bozkurt n

co-author countries: United States of America 🇺🇸
author keywords: asthma; environmental sensing; ozone exposure; ozone sensor; wearables
Sources: Web Of Science, ORCID
Added: February 28, 2022

2021 article

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology

2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), pp. 966–969.

By: T. Liu*, H. Zhang*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, M. White*, A. Fayed*, A. Agarwal*

co-author countries: United States of America 🇺🇸
author keywords: SiC ICs; CMOS design in SiC; Power ICs; SPICE modeling
Source: Web Of Science
Added: May 16, 2022

2021 article

Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles

2021 IEEE SENSORS.

By: B. Lee n, M. Lim n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: gas sensor; skin gas monitoring; VOC; wearable system; VOC from skin emission
Sources: Web Of Science, ORCID
Added: February 28, 2022

2020 journal article

Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887.

By: F. Azam n, A. Tanneeru n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN/GaN; atomic layer deposition (ALD); current collapse; HfO2; high electron mobility transistor (HEMT); high-k; high-temperature reverse bias (HTRB); hydroxyl; interface; MOS; HFET; oxidant; reliability; traps
Sources: Web Of Science, ORCID
Added: April 14, 2020

2019 journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

By: X. Yang n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Atomic layer deposition (ALD); forming gas anneal (FGA) lanthanum silicate (LaSiOx); mobility; SiC; threshold voltage
Sources: Web Of Science, ORCID
Added: January 14, 2019

2018 article

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

By: Y. Jiang n, W. Sung*, J. Baliga n, S. Wang n, B. Lee n & A. Huang n

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; high voltage; Schottky barrier height; high-temperature electrical performance
Source: Web Of Science
Added: August 6, 2018

2018 journal article

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal

IEEE ELECTRON DEVICE LETTERS, 39(2), 244–247.

By: X. Yang n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; lanthanum silicate; forming gas anneal; electron mobility; atomic layer deposition; threshold voltage
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM

IEEE SENSORS JOURNAL, 18(9), 3590–3594.

By: M. Lim n, S. Mills n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: ALD; O-3; ozone; QCM; quartz crystal microbalance; SnO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2018 journal article

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997.

By: B. Sarkar n, S. Mills n, B. Lee n, W. Pitts n, V. Misra n & P. Franzon n

co-author countries: United States of America 🇺🇸
author keywords: RRAM; TiO2; synapse; neuromorphic systems; volatile memory
Sources: Web Of Science, ORCID
Added: August 6, 2018

2017 conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43.

By: F. Azam n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

By: X. Yang n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Atomic layer deposition (ALD); charge; MOSFETs; SiC; SiO2; threshold voltage
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2016 journal article

Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264.

By: J. Dieffenderfer n, H. Goodell n, S. Mills n, M. McKnight n, S. Yao n, F. Lin n, E. Beppler n, B. Bent n ...

co-author countries: United States of America 🇺🇸
author keywords: Environmental and physiological sensing; wearable asthma monitoring
MeSH headings : Asthma / diagnosis; Chronic Disease; Electric Impedance; Electrocardiography; Equipment Design; Humans; Monitoring, Ambulatory / instrumentation; Monitoring, Ambulatory / methods; Photoplethysmography; Skin / physiopathology; Spirometry
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2016 conference paper

Metal oxide gas sensing characterization by low frequency noise spectroscopy

2016 ieee sensors.

By: M. Lim n, A. Malhotra n, S. Mills n, J. Muth n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3).

By: N. Ramanan n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: heterojunctions; power transistors; semiconductor-insulator interfaces; semiconductor device reliability; high-k gate dielectrics; atomic layer deposition; AlGaN/GaN
Sources: Web Of Science, ORCID
Added: August 6, 2018

2016 conference paper

Room temperature sensing of VOCS by atomic layer deposition of metal oxide

2016 ieee sensors.

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 conference paper

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra n & A. Huang n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12).

By: N. Ramanan n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: power transistors; semiconductor-insulator interfaces; semiconductor device reliability; high-k gate dielectrics; atomic layer deposition (ALD); AlGaN/GaN; MOSHFET
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24), 243503.

By: N. Ramanan n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2015 journal article

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3034–S3037.

By: M. Lim n, S. Mills n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3059–S3061.

By: S. Mills n, M. Lim n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553.

By: N. Ramanan n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Heterojunctions; millimeter wave transistors; power transistors; semiconductor device reliability; semiconductor-insulator interfaces
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)

Journal of Applied Physics, 117(17), 17D908.

By: S. Singamaneni n, J. Prater n, S. Nori n, D. Kumar*, B. Lee n, V. Misra n, J. Narayan n

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: November 21, 2020

2015 journal article

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

PROCEEDINGS OF THE IEEE, 103(4), 665–681.

By: V. Misra n, A. Bozkurt n, B. Calhoun*, T. Jackson*, J. Jur n, J. Lach*, B. Lee n, J. Muth n ...

co-author countries: United States of America 🇺🇸
author keywords: Atomic layer deposition; CMUT; environmental monitoring; environmental sensor; flexible electrode; motion harvesting; physiological sensor; piezoelectric; PZT; self-powered; silver nanowire; TEG; thermoelectrics; ultra-low power; ultra-low power SOC; volatile organic compound sensor; wearable device
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314.

By: X. Yang n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Atomic layer deposition; lanthanum silicate; mobility; SiC
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 journal article

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

By: X. Yang n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Atomic layer deposition (ALD); ALD SiO2; lanthanum silicate (LaSiOx); mobility; silicon carbide (SiC)
Sources: Web Of Science, ORCID, Crossref
Added: August 6, 2018

2015 conference paper

Ultra-low power sensing platform for personal health and personal environmental monitoring

2015 IEEE International Electron Devices Meeting (IEDM).

By: V. Misra n, B. Lee n, P. Manickam*, M. Lim n, S. Pasha*, S. Mills n, S. Bhansali*

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

By: B. Sarkar*, B. Lee* & V. Misra*

author keywords: RRAM; forming; set; reset; synapse; diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

2015 conference paper

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149–150.

By: B. Sarkar n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

Proceedings of the international symposium on power semiconductor, 366–369.

By: N. Ramanan n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018.

By: N. Ramanan n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: AlGaN/GaN; current collapse; gate-lag; HEMT; high electron mobility transistor; passivation; reliability
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 journal article

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50.

By: B. Sarkar n, N. Ramanan n, S. Jayanti n, N. Di Spigna n, B. Lee n, P. Franzon n, V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Flash memory; floating gate; dynamic memory; MOSFET; FN tunneling; direct tunneling
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

Flash MOS-HFET operational stability for power converter circuits

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878.

By: C. Kirkpatrick n, B. Lee n, N. Ramanan n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: MOSHFET; flash; ALD; power converter
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 article

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561.

By: X. Yang n, B. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; ALD; La2O3; MOS; Mobility
Sources: Web Of Science, ORCID
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269–272.

By: I. Ji n, B. Lee n, S. Wang n, V. Misra n, A. Huang n & Y. Choi*

co-author countries: Korea (Republic of) 🇰🇷 United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41–46.

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: B. Lee*, Y. Choi*, C. Kirkpatrick*, A. Huang* & V. Misra*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 conference paper

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

By: B. Sarkar n, S. Jayanti n, N. Spigna n, B. Lee n, V. Misra n & P. Franzon n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2013 journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: N. Ramanan n, B. Lee n, C. Kirkpatrick n, R. Suri n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.

By: C. Kirkpatrick n, B. Lee n, R. Suri n, X. Yang n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors

IEEE ELECTRON DEVICE LETTERS, 33(8), 1120–1122.

co-author countries: Spain 🇪🇸 United States of America 🇺🇸
author keywords: High-k dielectric; III-V semiconductors; nanodevices
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870.

By: B. Lee n, C. Kirkpatrick n, Y. Choi n, X. Yang n, A. Huang n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: enhancement mode; GaN-MOSHFET; normally-off; atomic layer deposition
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867.

By: C. Kirkpatrick n, B. Lee n, Y. Choi n, A. Huang n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: GaN; MOS-HFET; ALD; enhancement mode
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

APPLIED PHYSICS LETTERS, 99(7).

By: R. Jeff*, M. Yun*, B. Ramalingam*, B. Lee n, V. Misra n, G. Triplett*, S. Gangopadhyay*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935.

By: B. Lee n, D. Lichtenwalner n, S. Novak n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

By: B. Lee n, S. Novak n, D. Lichtenwalner n, X. Yang n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: C. Kirkpatrick n, B. Lee n, X. Yang n, V. Misra n, C. Wetzel & A. Khan

co-author countries: United States of America 🇺🇸
author keywords: GaN; HFET; MOS-HFET; ALD
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

By: B. Lee n, C. Kirkpatrick n, X. Yang n, S. Jayanti n, R. Suri n, J. Roberts n, V. Misra n

co-author countries: United States of America 🇺🇸
Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2010 journal article

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.

By: S. Novak n, B. Lee n, X. Yang n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 journal article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

APPLIED PHYSICS LETTERS, 93(19).

By: R. Suri n, B. Lee n, D. Lichtenwalner n, N. Biswas n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: annealing; atomic layer deposition; capacitance; dielectric thin films; gallium arsenide; hafnium compounds; III-V semiconductors; MOS capacitors; passivation; semiconductor-insulator boundaries; X-ray photoelectron spectra
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

A molecular memory device formed by HfO2 encapsulation of redox-active molecules

APPLIED PHYSICS LETTERS, 91(17).

By: Z. Chen n, B. Lee n, S. Sarkar n, S. Gowda n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557.

By: B. Lee n, N. Biswas n, S. Novak n & V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: band edge work function; fully silicided (FUSI) gate; metal gate electrodes; n-MOSFET; nickel/gadolinium (Ni/Gd); Ni-FUSI; work function extraction
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.

By: B. Chen n, R. Jha n, H. Lazar n, N. Biswas n, J. Lee n, B. Lee n, L. Wielunski*, E. Garfunkel*, V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

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