Works (47)

2019 journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: January 14, 2019

2018 journal article

Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height

Journal of Electronic Materials, 47(2), 927–931.

By: Y. Jiang, W. Sung, J. Baliga, S. Wang, B. Lee & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

Improvement of threshold voltage reliability of 4H-SiC MOSFETs with lanthanum silicate by high temperature forming gas anneal

IEEE Electron Device Letters, 39(2), 244–247.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

Investigation of O-3 adsorption on ultra-thin ALD SnO2 by QCM

IEEE Sensors Journal, 18(9), 3590–3594.

By: M. Lim, S. Mills, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2018 journal article

On using the volatile mem-capacitive effect of TiO2 resistive random access memory to mimic the synaptic forgetting process

Journal of Electronic Materials, 47(2), 994–997.

By: B. Sarkar, S. Mills, B. Lee, W. Pitts, V. Misra & P. Franzon

Source: NC State University Libraries
Added: August 6, 2018

2017 conference paper

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

In 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA) (pp. 39–43).

By: F. Azam, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Electrical characteristics of SiO2 deposited by atomic layer deposition on 4H-SiC after nitrous oxide anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Low-power wearable systems for continuous monitoring of environment and health for chronic respiratory disease

IEEE Journal of Biomedical and Health Informatics, 20(5).

By: J. Dieffenderfer, H. Goodell, S. Mills, M. McKnight, S. Yao, F. Lin, E. Beppler, B. Bent ...

Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

Metal oxide gas sensing characterization by low frequency noise spectroscopy

In 2016 ieee sensors.

Source: NC State University Libraries
Added: August 6, 2018

2016 journal article

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

Semiconductor Science and Technology, 31(3).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2016 conference paper

Room temperature sensing of VOCS by atomic layer deposition of metal oxide

In 2016 ieee sensors.

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

A A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

In WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (pp. 147–149).

By: I. Ji, B. Lee, S. Wang, V. Misra & A. Huang

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Semiconductor Science and Technology, 30(12).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Application of AlGaN/GaN heterostructures for ultra-low power nitrogen dioxide sensing

ECS Journal of Solid State Science and Technology, 4(10), S3034–3037.

By: M. Lim, S. Mills, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Atomic layer deposition of SnO2 for selective room temperature low ppb level O-3 sensing

ECS Journal of Solid State Science and Technology, 4(10), S3059–3061.

By: S. Mills, M. Lim, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices

IEEE Transactions on Electron Devices, 62(2), 546–553.

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Flexible technologies for self-powered wearable health and environmental sensing

Proceedings of the IEEE, 103(4), 665–681.

By: V. Misra, A. Bozkurt, B. Calhoun, T. Jackson, J. Jur, J. Lach, B. Lee, J. Muth ...

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

High mobility 4H-SiC lateral MOSFETs using lanthanum silicate and atomic layer deposited SiO2

IEEE Electron Device Letters, 36(4), 312–314.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Investigation of lanthanum silicate conditions on 4H-SiC MOSFET characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Ultra-low power sensing platform for personal health and personal environmental monitoring

In 2015 IEEE International Electron Devices Meeting (IEDM).

By: V. Misra, B. Lee, P. Manickam, M. Lim, S. Pasha, S. Mills, S. Bhansali

Source: NC State University Libraries
Added: August 6, 2018

2015 journal article

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

Semiconductor Science and Technology, 30(10).

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2015 conference paper

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

In 2015 73rd Annual Device Research Conference (DRC) (pp. 149–150).

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

A A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

In Proceedings of the international symposium on power semiconductor (pp. 366–369).

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Device modeling for understanding AlGaN/GaN HEMT gate-lag

IEEE Transactions on Electron Devices, 61(6), 2012–2018.

By: N. Ramanan, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 journal article

Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation

IEEE Electron Device Letters, 35(1), 48–50.

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

Flash MOS-HFET operational stability for power converter circuits

In Physica status solidi c: current topics in solid state physics, vol 11, no 3-4 (Vol. 11, pp. 875–878).

By: C. Kirkpatrick, B. Lee, N. Ramanan & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

High mobility 4H-SiC MOSFETs using lanthanum silicate interface engineering and ALD deposited SiO2

In Silicon carbide and related materials 2013, pts 1 and 2 (Vol. 778-780, pp. 557–561).

By: X. Yang, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

In Proceedings of the international symposium on power semiconductor (pp. 269–272).

By: I. Ji, B. Lee, S. Wang, V. Misra, A. Huang & Y. Choi

Source: NC State University Libraries
Added: August 6, 2018

2014 conference paper

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

In Nonvolatile memories 3 (Vol. 64, pp. 41–46).

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

Semiconductor Science and Technology, 28(7).

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Investigation of intermediate dielectric for dual floating gate MOSFET

In 2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Semiconductor Science and Technology, 28(7).

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters, 33(9), 1240–1242.

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Effects of a high-k dielectric on the performance of III-V ballistic deflection transistors

IEEE Electron Device Letters, 33(8), 1120–1122.

By: V. Kaushal, I. Iniguez-de-la-Torre, T. Gonzalez, J. Mateos, B. Lee, V. Misra, M. Margala

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 868–870).

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 864–867).

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

Applied Physics Letters, 99(7).

By: R. Jeff, M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, S. Gangopadhyay

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Impact of AlTaO dielectric capping on device performance and reliability for advanced metal gate/high-k PMOS application

IEEE Transactions on Electron Devices, 58(9), 2928–2935.

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties

IEEE Transactions on Electron Devices, 58(9), 3106–3115.

Source: NC State University Libraries
Added: August 6, 2018

2011 conference paper

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

In 2010 international electron devices meeting - technical digest.

By: B. Lee, C. Kirkpatrick, X. Yang, S. Jayanti, R. Suri, J. Roberts, V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Platinum nanoparticles grown by atomic layer deposition for charge storage memory applications

Journal of the Electrochemical Society, 157(6), H589–592.

By: S. Novak, B. Lee, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters, 93(19).

By: R. Suri, B. Lee, D. Lichtenwalner, N. Biswas & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

A A molecular memory device formed by HfO2 encapsulation of redox-active molecules

Applied Physics Letters, 91(17).

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE Electron Device Letters, 28(7), 555–557.

By: B. Lee, N. Biswas, S. Novak & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE Electron Device Letters, 27(4), 228–230.

By: B. Chen, R. Jha, H. Lazar, N. Biswas, J. Lee, B. Lee, L. Wielunski, E. Garfunkel, V. Misra

Source: NC State University Libraries
Added: August 6, 2018