Bongmook Lee

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

2022 IEEE 65TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS 2022).

A Wearable Electrocardiography Armband Resilient Against Artifacts

IEEE SENSORS JOURNAL, 22(19), 18970–18977.

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS).

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.

Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 118–122.

Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers

2021 IEEE SENSORS.

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology

2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), pp. 966–969.

Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles

2021 IEEE SENSORS.

Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions

IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887.

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931.

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal

IEEE ELECTRON DEVICE LETTERS, 39(2), 244–247.

Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM

IEEE SENSORS JOURNAL, 18(9), 3590–3594.

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997.

Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43.

Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

IEEE Transactions on Electron Devices, 63(7), 2826–2830.

Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264.

Metal oxide gas sensing characterization by low frequency noise spectroscopy

2016 ieee sensors.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3).

Room temperature sensing of VOCS by atomic layer deposition of metal oxide

2016 ieee sensors.

A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149.

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12).

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Applied Physics Letters, 106(24), 243503.

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3034–S3037.

Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3059–S3061.

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553.

Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)

Journal of Applied Physics, 117(17), 17D908.

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

PROCEEDINGS OF THE IEEE, 103(4), 665–681.

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314.

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

IEEE Transactions on Electron Devices, 62(11), 3781–3785.

Ultra-low power sensing platform for personal health and personal environmental monitoring

2015 IEEE International Electron Devices Meeting (IEDM).

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149–150.

A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

Proceedings of the international symposium on power semiconductor, 366–369.

Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag

IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018.

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50.

Flash MOS-HFET operational stability for power converter circuits

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878.

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561.

High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Proceedings of the international symposium on power semiconductor, 269–272.

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41–46.

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242.

Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors

IEEE ELECTRON DEVICE LETTERS, 33(8), 1120–1122.

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870.

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867.

Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory

APPLIED PHYSICS LETTERS, 99(7).

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935.

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592.

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

APPLIED PHYSICS LETTERS, 93(19).

A molecular memory device formed by HfO2 encapsulation of redox-active molecules

APPLIED PHYSICS LETTERS, 91(17).

Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557.

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.