@article{zhang_liu_gupta_isukapati_ashik_morgan_lee_sung_agarwal_fayed_2022, title={A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology}, DOI={10.1109/MWSCAS54063.2022.9859305}, journal={2022 IEEE 65TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS 2022)}, author={Zhang, Hua and Liu, Tianshi and Gupta, Utsav and Isukapati, Sundar Babu and Ashik, Emran and Morgan, Adam J. and Lee, Bongmook and Sung, Woongje and Agarwal, Anant K. and Fayed, Ayman}, year={2022} }
 @article{zhou_mohaddes_lee_rao_mills_curry_lee_misra_2022, title={A Wearable Electrocardiography Armband Resilient Against Artifacts}, volume={22}, ISSN={["1558-1748"]}, url={https://doi.org/10.1109/JSEN.2022.3197060}, DOI={10.1109/JSEN.2022.3197060}, number={19}, journal={IEEE SENSORS JOURNAL}, author={Zhou, Yilu and Mohaddes, Farzad and Lee, Courtney and Rao, Smriti and Mills, Amanda C. and Curry, Adam C. and Lee, Bongmook and Misra, Veena}, year={2022}, month={Oct}, pages={18970–18977} }
 @article{ashik_isukapati_zhang_liu_gupta_morgan_misra_sung_fayed_agarwal_et al._2022, title={Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications}, ISSN={["1541-7026"]}, DOI={10.1109/IRPS48227.2022.9764565}, journal={2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)}, author={Ashik, Emran K. and Isukapati, Sundar B. and Zhang, Hua and Liu, Tianshi and Gupta, Utsav and Morgan, Adam J. and Misra, Veena and Sung, Woongje and Fayed, Ayman and Agarwal, Anant K. and et al.}, year={2022} }
 @article{liu_zhang_isukapati_ashik_morgan_lee_sung_fayed_white_agarwal_2022, title={SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology}, volume={10}, ISSN={["2168-6734"]}, DOI={10.1109/JEDS.2022.3150364}, journal={IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY}, author={Liu, Tianshi and Zhang, Hua and Isukapati, Sundar Babu and Ashik, Emran and Morgan, Adam J. and Lee, Bongmook and Sung, Woongje and Fayed, Ayman and White, Marvin H. and Agarwal, Anant K.}, year={2022}, pages={129–138} }
 @article{isukapati_morgan_sung_zhang_liu_fayed_agarwal_ashik_lee_2021, title={Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications}, DOI={10.1109/WiPDA49284.2021.9645134}, journal={2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)}, author={Isukapati, Sundar Babu and Morgan, Adam J. and Sung, Woongje and Zhang, Hua and Liu, Tianshi and Fayed, Ayman and Agarwal, Anant K. and Ashik, Emran and Lee, Bongmook}, year={2021}, pages={118–122} }
 @article{latif_dieffenderfer_tanneeru_lee_misra_bozkurt_2021, title={Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers}, ISSN={["1930-0395"]}, DOI={10.1109/SENSORS47087.2021.9639530}, journal={2021 IEEE SENSORS}, author={Latif, Tahmid and Dieffenderfer, James and Tanneeru, Akhilesh and Lee, Bongmook and Misra, Veena and Bozkurt, Alper}, year={2021} }
 @article{liu_zhang_isukapati_ashik_morgan_lee_sung_white_fayed_agarwal_2021, title={SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology}, ISSN={["1558-3899"]}, DOI={10.1109/MWSCAS47672.2021.9531903}, journal={2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS)}, author={Liu, Tianshi and Zhang, Hua and Isukapati, Sundar Babu and Ashik, Emaran and Morgan, Adam J. and Lee, Bongmook and Sung, Woongje and White, Marvin H. and Fayed, Ayman and Agarwal, Anant K.}, year={2021}, pages={966–969} }
 @article{lee_lim_misra_2021, title={Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles}, ISSN={["1930-0395"]}, DOI={10.1109/SENSORS47087.2021.9639471}, journal={2021 IEEE SENSORS}, author={Lee, Bongmook and Lim, Michael and Misra, Veena}, year={2021} }
 @article{azam_tanneeru_lee_misra_2020, title={Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions}, volume={67}, ISSN={["1557-9646"]}, url={https://doi.org/10.1109/TED.2020.2969394}, DOI={10.1109/TED.2020.2969394}, number={3}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Azam, Faisal and Tanneeru, Akhilesh and Lee, Bongmook and Misra, Veena}, year={2020}, month={Mar}, pages={881–887} }
 @article{yang_lee_misra_2019, title={Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx}, volume={66}, ISSN={["1557-9646"]}, DOI={10.1109/TED.2018.2875094}, number={1}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2019}, month={Jan}, pages={539–545} }
 @article{jiang_sung_baliga_wang_lee_huang_2018, title={Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height}, volume={47}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-017-5812-2}, number={2}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Jiang, Yifan and Sung, Woongje and Baliga, Jayant and Wang, Sizhen and Lee, Bongmook and Huang, Alex}, year={2018}, month={Feb}, pages={927–931} }
 @article{yang_lee_misra_2018, title={Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal}, volume={39}, ISSN={["1558-0563"]}, DOI={10.1109/led.2017.2785851}, number={2}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2018}, month={Feb}, pages={244–247} }
 @article{lim_mills_lee_misra_2018, title={Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM}, volume={18}, ISSN={["1558-1748"]}, DOI={10.1109/jsen.2018.2815698}, number={9}, journal={IEEE SENSORS JOURNAL}, author={Lim, Michael and Mills, Steven and Lee, Bongmook and Misra, Veena}, year={2018}, month={May}, pages={3590–3594} }
 @article{sarkar_mills_lee_pitts_misra_franzon_2018, title={On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process}, volume={47}, ISSN={["1543-186X"]}, DOI={10.1007/s11664-017-5914-x}, number={2}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Sarkar, Biplab and Mills, Steven and Lee, Bongmook and Pitts, W. Shepherd and Misra, Veena and Franzon, Paul D.}, year={2018}, month={Feb}, pages={994–997} }
 @inproceedings{azam_lee_misra_2017, title={Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability}, DOI={10.1109/wipda.2017.8170499}, booktitle={2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA)}, author={Azam, F. and Lee, B. and Misra, Veena}, year={2017}, pages={39–43} }
 @article{yang_lee_misra_2016, title={Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal}, volume={63}, ISSN={0018-9383 1557-9646}, url={http://dx.doi.org/10.1109/TED.2016.2565665}, DOI={10.1109/ted.2016.2565665}, number={7}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2016}, month={Jul}, pages={2826–2830} }
 @article{dieffenderfer_goodell_mills_mcknight_yao_lin_beppler_bent_lee_misra_et al._2016, title={Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease}, volume={20}, ISSN={2168-2194 2168-2208}, url={http://dx.doi.org/10.1109/JBHI.2016.2573286}, DOI={10.1109/jbhi.2016.2573286}, number={5}, journal={IEEE Journal of Biomedical and Health Informatics}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Dieffenderfer, James and Goodell, Henry and Mills, Steven and McKnight, Michael and Yao, Shanshan and Lin, Feiyan and Beppler, Eric and Bent, Brinnae and Lee, Bongmook and Misra, Veena and et al.}, year={2016}, month={Sep}, pages={1251–1264} }
 @inproceedings{lim_malhotra_mills_muth_lee_misra_2016, title={Metal oxide gas sensing characterization by low frequency noise spectroscopy}, DOI={10.1109/icsens.2016.7808835}, booktitle={2016 ieee sensors}, author={Lim, M. and Malhotra, A. and Mills, S. and Muth, J. and Lee, B. and Misra, Veena}, year={2016} }
 @article{ramanan_lee_misra_2016, title={Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs}, volume={31}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/31/3/035016}, number={3}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Ramanan, Narayanan and Lee, Bongmook and Misra, Veena}, year={2016}, month={Mar} }
 @inproceedings{tanneeru_mills_lim_mahmud_dieffenderfer_bozkurt_nagle_lee_misra_2016, title={Room temperature sensing of VOCS by atomic layer deposition of metal oxide}, DOI={10.1109/icsens.2016.7808786}, booktitle={2016 ieee sensors}, author={TANNEERU, AKHILESH and Mills, S. and Lim, M. and Mahmud, M. M. and Dieffenderfer, J. and Bozkurt, A. and Nagle, T. and Lee, B. and Misra, V.}, year={2016} }
 @inproceedings{ji_lee_wang_misra_huang_2015, title={A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application}, DOI={10.1109/wipda.2015.7369277}, booktitle={WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications}, author={Ji, I. H. and Lee, B. and Wang, S. Z. and Misra, Veena and Huang, A. Q.}, year={2015}, pages={147–149} }
 @article{ramanan_lee_misra_2015, title={ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications}, volume={30}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/30/12/125017}, number={12}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Ramanan, Narayanan and Lee, Bongmook and Misra, Veena}, year={2015}, month={Dec} }
 @article{ramanan_lee_misra_2015, title={Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory}, volume={106}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4922799}, DOI={10.1063/1.4922799}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ramanan, Narayanan and Lee, Bongmook and Misra, Veena}, year={2015}, month={Jun}, pages={243503} }
 @article{lim_mills_lee_misra_2015, title={Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing}, volume={4}, ISSN={["2162-8769"]}, DOI={10.1149/2.0101510jss}, number={10}, journal={ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY}, author={Lim, Michael and Mills, Steven and Lee, Bongmook and Misra, Veena}, year={2015}, pages={S3034–S3037} }
 @article{mills_lim_lee_misra_2015, title={Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing}, volume={4}, ISSN={["2162-8769"]}, DOI={10.1149/2.0111510jss}, number={10}, journal={ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY}, author={Mills, Steven and Lim, Michael and Lee, Bongmook and Misra, Veena}, year={2015}, pages={S3059–S3061} }
 @article{ramanan_lee_misra_2015, title={Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices}, volume={62}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2014.2382677}, number={2}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Ramanan, Narayanan and Lee, Bongmook and Misra, Veena}, year={2015}, month={Feb}, pages={546–553} }
 @article{singamaneni_prater_nori_kumar_lee_misra_narayan_2015, title={Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)}, volume={117}, ISSN={0021-8979 1089-7550}, url={http://dx.doi.org/10.1063/1.4913811}, DOI={10.1063/1.4913811}, number={17}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Singamaneni, Srinivasa Rao and Prater, J. T. and Nori, S. and Kumar, D. and Lee, Bongmook and Misra, V. and Narayan, J.}, year={2015}, month={May}, pages={17D908} }
 @article{misra_bozkurt_calhoun_jackson_jur_lach_lee_muth_oralkan_oeztuerk_et al._2015, title={Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing}, volume={103}, ISSN={["1558-2256"]}, DOI={10.1109/jproc.2015.2412493}, number={4}, journal={PROCEEDINGS OF THE IEEE}, author={Misra, Veena and Bozkurt, Alper and Calhoun, Benton and Jackson, Thomas N. and Jur, Jesse S. and Lach, John and Lee, Bongmook and Muth, John and Oralkan, Oemer and Oeztuerk, Mehmet and et al.}, year={2015}, month={Apr}, pages={665–681} }
 @article{yang_lee_misra_2015, title={High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2}, volume={36}, ISSN={["1558-0563"]}, DOI={10.1109/led.2015.2399891}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2015}, month={Apr}, pages={312–314} }
 @article{yang_lee_misra_2015, title={Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics}, volume={62}, ISSN={0018-9383 1557-9646}, url={http://dx.doi.org/10.1109/TED.2015.2480047}, DOI={10.1109/ted.2015.2480047}, number={11}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2015}, month={Nov}, pages={3781–3785} }
 @inproceedings{misra_lee_manickam_lim_pasha_mills_bhansali_2015, title={Ultra-low power sensing platform for personal health and personal environmental monitoring}, DOI={10.1109/iedm.2015.7409687}, booktitle={2015 IEEE International Electron Devices Meeting (IEDM)}, author={Misra, Veena and Lee, B. and Manickam, P. and Lim, M. and Pasha, S. K. and Mills, S. and Bhansali, S.}, year={2015} }
 @article{sarkar_lee_misra_2015, title={Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications}, volume={30}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/30/10/105014}, number={10}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Sarkar, Biplab and Lee, Bongmook and Misra, Veena}, year={2015}, month={Oct} }
 @inproceedings{sarkar_lee_misra_2015, title={Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM}, DOI={10.1109/drc.2015.7175599}, booktitle={2015 73rd Annual Device Research Conference (DRC)}, author={Sarkar, B. and Lee, B. and Misra, Veena}, year={2015}, pages={149–150} }
 @inproceedings{ramanan_lee_misra_2014, title={A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs}, DOI={10.1109/ispsd.2014.6856052}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Ramanan, N. and Lee, B. and Misra, Veena}, year={2014}, pages={366–369} }
 @article{ramanan_lee_misra_2014, title={Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag}, volume={61}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2014.2313814}, number={6}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Ramanan, Narayanan and Lee, Bongmook and Misra, Veena}, year={2014}, month={Jun}, pages={2012–2018} }
 @article{sarkar_ramanan_jayanti_di spigna_lee_franzon_misra_2014, title={Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation}, volume={35}, ISSN={["1558-0563"]}, DOI={10.1109/led.2013.2289751}, number={1}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Sarkar, Biplab and Ramanan, Narayanan and Jayanti, Srikant and Di Spigna, Neil and Lee, Bongmook and Franzon, Paul and Misra, Veena}, year={2014}, month={Jan}, pages={48–50} }
 @article{kirkpatrick_lee_ramanan_misra_2014, title={Flash MOS-HFET operational stability for power converter circuits}, volume={11}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201300547}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4}, author={Kirkpatrick, Casey and Lee, Bongmook and Ramanan, Narayanan and Misra, Veena}, year={2014}, pages={875–878} }
 @article{yang_lee_misra_2014, title={High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2}, volume={778-780}, ISBN={["*****************"]}, ISSN={["0255-5476"]}, DOI={10.4028/www.scientific.net/msf.778-780.557}, journal={SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2}, author={Yang, Xiangyu and Lee, Bongmook and Misra, Veena}, year={2014}, pages={557–561} }
 @inproceedings{ji_lee_wang_misra_huang_choi_2014, title={High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability}, DOI={10.1109/ispsd.2014.6856028}, booktitle={Proceedings of the international symposium on power semiconductor}, author={Ji, I. H. and Lee, B. M. and Wang, S. Z. and Misra, Veena and Huang, A. Q. and Choi, Y. H.}, year={2014}, pages={269–272} }
 @inproceedings{sarkar_lee_misra_2014, title={Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process}, volume={64}, number={14}, booktitle={Nonvolatile memories 3}, author={Sarkar, B. and Lee, B. and Misra, V.}, year={2014}, pages={41–46} }
 @article{lee_choi_kirkpatrick_huang_misra_2013, title={Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric}, volume={28}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/28/7/074016}, number={7}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Lee, B. and Choi, Y. H. and Kirkpatrick, C. and Huang, A. Q. and Misra, V.}, year={2013}, month={Jul} }
 @inproceedings{sarkar_jayanti_spigna_lee_misra_franzon_2013, title={Investigation of intermediate dielectric for dual floating gate MOSFET}, DOI={10.1109/nvmts.2013.6851052}, booktitle={2013 13th Non-Volatile Memory Technology Symposium (NVMTS)}, author={Sarkar, B. and Jayanti, S. and Spigna, N. Di and Lee, B. and Misra, V. and Franzon, Paul}, year={2013} }
 @article{ramanan_lee_kirkpatrick_suri_misra_2013, title={Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation}, volume={28}, ISSN={["1361-6641"]}, DOI={10.1088/0268-1242/28/7/074004}, number={7}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Ramanan, Narayanan and Lee, Bongmook and Kirkpatrick, Casey and Suri, Rahul and Misra, Veena}, year={2013}, month={Jul} }
 @article{kirkpatrick_lee_suri_yang_misra_2012, title={Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs}, volume={33}, ISSN={["1558-0563"]}, DOI={10.1109/led.2012.2203782}, number={9}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Kirkpatrick, Casey J. and Lee, Bongmook and Suri, Rahul and Yang, Xiangyu and Misra, Veena}, year={2012}, month={Sep}, pages={1240–1242} }
 @article{kaushal_iniguez-de-la-torre_gonzalez_mateos_lee_misra_margala_2012, title={Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors}, volume={33}, ISSN={["1558-0563"]}, DOI={10.1109/led.2012.2197669}, number={8}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Kaushal, Vikas and Iniguez-de-la-Torre, Ignacio and Gonzalez, Tomas and Mateos, Javier and Lee, Bongmook and Misra, Veena and Margala, Martin}, year={2012}, month={Aug}, pages={1120–1122} }
 @article{lee_kirkpatrick_choi_yang_huang_misra_2012, title={Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application}, volume={9}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201100422}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4}, author={Lee, Bongmook and Kirkpatrick, Casey and Choi, Young-hwan and Yang, Xiangyu and Huang, Alex Q. and Misra, Veena}, year={2012}, pages={868–870} }
 @article{kirkpatrick_lee_choi_huang_misra_2012, title={Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage}, volume={9}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201100421}, number={3-4}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4}, author={Kirkpatrick, Casey and Lee, Bongmook and Choi, YoungHwan and Huang, Alex and Misra, Veena}, year={2012}, pages={864–867} }
 @article{jeff_yun_ramalingam_lee_misra_triplett_gangopadhyay_2011, title={Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory}, volume={99}, ISSN={["0003-6951"]}, DOI={10.1063/1.3625426}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Jeff, R. C., Jr. and Yun, M. and Ramalingam, B. and Lee, B. and Misra, V. and Triplett, G. and Gangopadhyay, S.}, year={2011}, month={Aug} }
 @article{lee_lichtenwalner_novak_misra_2011, title={Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application}, volume={58}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2011.2160064}, number={9}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Lee, Bongmook and Lichtenwalner, Daniel J. and Novak, Steven R. and Misra, Veena}, year={2011}, month={Sep}, pages={2928–2935} }
 @article{lee_novak_lichtenwalner_yang_misra_2011, title={Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties}, volume={58}, ISSN={["1557-9646"]}, DOI={10.1109/ted.2011.2159306}, number={9}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Lee, Bongmook and Novak, Steven R. and Lichtenwalner, Daniel J. and Yang, Xiangyu and Misra, Veena}, year={2011}, month={Sep}, pages={3106–3115} }
 @article{kirkpatrick_lee_yang_misra_wetzel_khan_2011, title={Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics}, volume={8}, ISSN={["1862-6351"]}, DOI={10.1002/pssc.201001064}, number={7-8}, journal={PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8}, author={Kirkpatrick, Casey and Lee, Bongmook and Yang, Xiangyu and Misra, Veena and Wetzel, C and Khan, A}, year={2011} }
 @inproceedings{lee_kirkpatrick_yang_jayanti_suri_roberts_misra_2010, title={Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics}, DOI={10.1109/iedm.2010.5703401}, booktitle={2010 international electron devices meeting - technical digest}, author={Lee, B. and Kirkpatrick, C. and Yang, X. Y. and Jayanti, S. and Suri, R. and Roberts, J. and Misra, Veena}, year={2010} }
 @article{novak_lee_yang_misra_2010, title={Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications}, volume={157}, ISSN={["1945-7111"]}, DOI={10.1149/1.3365031}, number={6}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Novak, Steven and Lee, Bongmook and Yang, Xiangyu and Misra, Veena}, year={2010}, pages={H589–H592} }
 @article{suri_lee_lichtenwalner_biswas_misra_2008, title={Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric}, volume={93}, ISSN={["0003-6951"]}, DOI={10.1063/1.3007978}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Suri, Rahul and Lee, Bongmook and Lichtenwalner, Daniel J. and Biswas, Nivedita and Misra, Veena}, year={2008}, month={Nov} }
 @article{chen_lee_sarkar_gowda_misra_2007, title={A molecular memory device formed by HfO2 encapsulation of redox-active molecules}, volume={91}, ISSN={["0003-6951"]}, DOI={10.1063/1.2800824}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Chen, Zhong and Lee, Bongmook and Sarkar, Smita and Gowda, Srivardhan and Misra, Veena}, year={2007}, month={Oct} }
 @article{lee_biswas_novak_misra_2007, title={Characteristics of Ni/Gd FUSI for NMOS gate electrode applications}, volume={28}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2007.897889}, number={7}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Lee, Bongmook and Biswas, Nivedita and Novak, Steven R. and Misra, Veena}, year={2007}, month={Jul}, pages={555–557} }
 @article{chen_jha_lazar_biswas_lee_lee_wielunski_garfunkel_misra_2006, title={Influence of oxygen diffusion through capping layers of low work function metal gate electrodes}, volume={27}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2006.871184}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Chen, B and Jha, R and Lazar, H and Biswas, N and Lee, J and Lee, B and Wielunski, L and Garfunkel, E and Misra, V}, year={2006}, month={Apr}, pages={228–230} }