Bongmook Lee

Zhou, Y., Dieffenderfer, J., Aleem, M., Lee, B., & Misra, V. (2024). A Novel Monolithic MEMS Array for E-Nose Applications. IEEE SENSORS LETTERS, 8(2). https://doi.org/10.1109/LSENS.2024.3355902

Zhou, Y., Dieffenderfer, J., Sennik, E., Aleem, M., Speight, J., Vasisht, S., … Misra, V. (2023). Performance of A Monolithic E-Nose Array Integrating MEMS and ALD Processing. 2023 IEEE SENSORS. https://doi.org/10.1109/SENSORS56945.2023.10325054

Zhang, H., Liu, T., Gupta, U., Isukapati, S. B., Ashik, E., Morgan, A. J., … Fayed, A. (2022). A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology. 2022 IEEE 65TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS 2022). https://doi.org/10.1109/MWSCAS54063.2022.9859305

Zhou, Y., Mohaddes, F., Lee, C., Rao, S., Mills, A. C., Curry, A. C., … Misra, V. (2022). A Wearable Electrocardiography Armband Resilient Against Artifacts. IEEE SENSORS JOURNAL, 22(19), 18970–18977. https://doi.org/10.1109/JSEN.2022.3197060

Ashik, E. K., Isukapati, S. B., Zhang, H., Liu, T., Gupta, U., Morgan, A. J., … Lee, B. (2022). Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications. 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). https://doi.org/10.1109/IRPS48227.2022.9764565

Liu, T., Zhang, H., Isukapati, S. B., Ashik, E., Morgan, A. J., Lee, B., … Agarwal, A. K. (2022). SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138. https://doi.org/10.1109/JEDS.2022.3150364

Isukapati, S. B., Morgan, A. J., Sung, W., Zhang, H., Liu, T., Fayed, A., … Lee, B. (2021). Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications. 2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 118–122. https://doi.org/10.1109/WiPDA49284.2021.9645134

Latif, T., Dieffenderfer, J., Tanneeru, A., Lee, B., Misra, V., & Bozkurt, A. (2021). Evaluation of Environmental Enclosures for Effective Ambient Ozone Sensing in Wrist-worn Health and Exposure Trackers. 2021 IEEE SENSORS. https://doi.org/10.1109/SENSORS47087.2021.9639530

Liu, T., Zhang, H., Isukapati, S. B., Ashik, E., Morgan, A. J., Lee, B., … Agarwal, A. K. (2021). SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology. 2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), pp. 966–969. https://doi.org/10.1109/MWSCAS47672.2021.9531903

Lee, B., Lim, M., & Misra, V. (2021). Wearable skin vapor sensing system for continuous monitoring of various health and lifestyles. 2021 IEEE SENSORS. https://doi.org/10.1109/SENSORS47087.2021.9639471

Azam, F., Tanneeru, A., Lee, B., & Misra, V. (2020). Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(3), 881–887. https://doi.org/10.1109/TED.2020.2969394

Yang, X., Lee, B., & Misra, V. (2019). Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545. https://doi.org/10.1109/TED.2018.2875094

Jiang, Y., Sung, W., Baliga, J., Wang, S., Lee, B., & Huang, A. (2018, February). Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height. JOURNAL OF ELECTRONIC MATERIALS, Vol. 47, pp. 927–931. https://doi.org/10.1007/s11664-017-5812-2

Yang, X., Lee, B., & Misra, V. (2018). Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal. IEEE ELECTRON DEVICE LETTERS, 39(2), 244–247. https://doi.org/10.1109/led.2017.2785851

Lim, M., Mills, S., Lee, B., & Misra, V. (2018). Investigation of O-3 Adsorption on Ultra-Thin ALD SnO2 by QCM. IEEE SENSORS JOURNAL, 18(9), 3590–3594. https://doi.org/10.1109/jsen.2018.2815698

Sarkar, B., Mills, S., Lee, B., Pitts, W. S., Misra, V., & Franzon, P. D. (2018). On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process. JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997. https://doi.org/10.1007/s11664-017-5914-x

Azam, F., Lee, B., & Misra, V. (2017). Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WIPDA), 39–43. https://doi.org/10.1109/wipda.2017.8170499

Yang, X., Lee, B., & Misra, V. (2016). Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal. IEEE Transactions on Electron Devices, 63(7), 2826–2830. https://doi.org/10.1109/ted.2016.2565665

Dieffenderfer, J., Goodell, H., Mills, S., McKnight, M., Yao, S., Lin, F., … Bozkurt, A. (2016). Low-Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease. IEEE Journal of Biomedical and Health Informatics, 20(5), 1251–1264. https://doi.org/10.1109/jbhi.2016.2573286

Lim, M., Malhotra, A., Mills, S., Muth, J., Lee, B., & Misra, V. (2016). Metal oxide gas sensing characterization by low frequency noise spectroscopy. 2016 ieee sensors. https://doi.org/10.1109/icsens.2016.7808835

Ramanan, N., Lee, B., & Misra, V. (2016). Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(3). https://doi.org/10.1088/0268-1242/31/3/035016

TANNEERU, A. K. H. I. L. E. S. H., Mills, S., Lim, M., Mahmud, M. M., Dieffenderfer, J., Bozkurt, A., … Misra, V. (2016). Room temperature sensing of VOCS by atomic layer deposition of metal oxide. 2016 ieee sensors. https://doi.org/10.1109/icsens.2016.7808786

Ji, I. H., Lee, B., Wang, S. Z., Misra, V., & Huang, A. Q. (2015). A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application. WiPDA 2015 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, 147–149. https://doi.org/10.1109/wipda.2015.7369277

Ramanan, N., Lee, B., & Misra, V. (2015). ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(12). https://doi.org/10.1088/0268-1242/30/12/125017

Ramanan, N., Lee, B., & Misra, V. (2015). Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory. Applied Physics Letters, 106(24), 243503. https://doi.org/10.1063/1.4922799

Lim, M., Mills, S., Lee, B., & Misra, V. (2015). Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3034–S3037. https://doi.org/10.1149/2.0101510jss

Mills, S., Lim, M., Lee, B., & Misra, V. (2015). Atomic Layer Deposition of SnO2 for Selective Room Temperature Low ppb Level O-3 Sensing. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(10), S3059–S3061. https://doi.org/10.1149/2.0111510jss

Ramanan, N., Lee, B., & Misra, V. (2015). Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(2), 546–553. https://doi.org/10.1109/ted.2014.2382677

Singamaneni, S. R., Prater, J. T., Nori, S., Kumar, D., Lee, B., Misra, V., & Narayan, J. (2015). Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100). Journal of Applied Physics, 117(17), 17D908. https://doi.org/10.1063/1.4913811

Misra, V., Bozkurt, A., Calhoun, B., Jackson, T. N., Jur, J. S., Lach, J., … Zhu, Y. (2015). Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing. PROCEEDINGS OF THE IEEE, 103(4), 665–681. https://doi.org/10.1109/jproc.2015.2412493

Yang, X., Lee, B., & Misra, V. (2015). High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2. IEEE ELECTRON DEVICE LETTERS, 36(4), 312–314. https://doi.org/10.1109/led.2015.2399891

Yang, X., Lee, B., & Misra, V. (2015). Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics. IEEE Transactions on Electron Devices, 62(11), 3781–3785. https://doi.org/10.1109/ted.2015.2480047

Misra, V., Lee, B., Manickam, P., Lim, M., Pasha, S. K., Mills, S., & Bhansali, S. (2015). Ultra-low power sensing platform for personal health and personal environmental monitoring. 2015 IEEE International Electron Devices Meeting (IEDM). https://doi.org/10.1109/iedm.2015.7409687

Sarkar, B., Lee, B., & Misra, V. (2015). Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10). https://doi.org/10.1088/0268-1242/30/10/105014

Sarkar, B., Lee, B., & Misra, V. (2015). Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM. 2015 73rd Annual Device Research Conference (DRC), 149–150. https://doi.org/10.1109/drc.2015.7175599

Ramanan, N., Lee, B., & Misra, V. (2014). A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs. Proceedings of the international symposium on power semiconductor, 366–369. https://doi.org/10.1109/ispsd.2014.6856052

Ramanan, N., Lee, B., & Misra, V. (2014). Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61(6), 2012–2018. https://doi.org/10.1109/ted.2014.2313814

Sarkar, B., Ramanan, N., Jayanti, S., Di Spigna, N., Lee, B., Franzon, P., & Misra, V. (2014). Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation. IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50. https://doi.org/10.1109/led.2013.2289751

Kirkpatrick, C., Lee, B., Ramanan, N., & Misra, V. (2014). Flash MOS-HFET operational stability for power converter circuits. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, Vol. 11, pp. 875–878. https://doi.org/10.1002/pssc.201300547

Yang, X., Lee, B., & Misra, V. (2014). High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, Vol. 778-780, pp. 557–561. https://doi.org/10.4028/www.scientific.net/msf.778-780.557

Ji, I. H., Lee, B. M., Wang, S. Z., Misra, V., Huang, A. Q., & Choi, Y. H. (2014). High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability. Proceedings of the international symposium on power semiconductor, 269–272. https://doi.org/10.1109/ispsd.2014.6856028

Sarkar, B., Lee, B., & Misra, V. (2014). Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process. Nonvolatile memories 3, 64(14), 41–46.

Lee, B., Choi, Y. H., Kirkpatrick, C., Huang, A. Q., & Misra, V. (2013). Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074016

Sarkar, B., Jayanti, S., Spigna, N. D., Lee, B., Misra, V., & Franzon, P. (2013). Investigation of intermediate dielectric for dual floating gate MOSFET. 2013 13th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2013.6851052

Ramanan, N., Lee, B., Kirkpatrick, C., Suri, R., & Misra, V. (2013). Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074004

Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X., & Misra, V. (2012). Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs. IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242. https://doi.org/10.1109/led.2012.2203782

Kaushal, V., Iniguez-de-la-Torre, I., Gonzalez, T., Mateos, J., Lee, B., Misra, V., & Margala, M. (2012). Effects of a High-k Dielectric on the Performance of III-V Ballistic Deflection Transistors. IEEE ELECTRON DEVICE LETTERS, 33(8), 1120–1122. https://doi.org/10.1109/led.2012.2197669

Lee, B., Kirkpatrick, C., Choi, Y.-hwan, Yang, X., Huang, A. Q., & Misra, V. (2012). Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870. https://doi.org/10.1002/pssc.201100422

Kirkpatrick, C., Lee, B., Choi, Y. H., Huang, A., & Misra, V. (2012). Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867. https://doi.org/10.1002/pssc.201100421

Jeff, R. C., Jr., Yun, M., Ramalingam, B., Lee, B., Misra, V., Triplett, G., & Gangopadhyay, S. (2011). Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory. APPLIED PHYSICS LETTERS, 99(7). https://doi.org/10.1063/1.3625426

Lee, B., Lichtenwalner, D. J., Novak, S. R., & Misra, V. (2011). Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935. https://doi.org/10.1109/ted.2011.2160064

Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X., & Misra, V. (2011). Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115. https://doi.org/10.1109/ted.2011.2159306

Kirkpatrick, C., Lee, B., Yang, X., Misra, V., Wetzel, C., & Khan, A. (2011). Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201001064

Lee, B., Kirkpatrick, C., Yang, X. Y., Jayanti, S., Suri, R., Roberts, J., & Misra, V. (2010). Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics. 2010 international electron devices meeting - technical digest. https://doi.org/10.1109/iedm.2010.5703401

Novak, S., Lee, B., Yang, X., & Misra, V. (2010). Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H589–H592. https://doi.org/10.1149/1.3365031

Suri, R., Lee, B., Lichtenwalner, D. J., Biswas, N., & Misra, V. (2008). Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. APPLIED PHYSICS LETTERS, 93(19). https://doi.org/10.1063/1.3007978

Chen, Z., Lee, B., Sarkar, S., Gowda, S., & Misra, V. (2007). A molecular memory device formed by HfO2 encapsulation of redox-active molecules. APPLIED PHYSICS LETTERS, 91(17). https://doi.org/10.1063/1.2800824

Lee, B., Biswas, N., Novak, S. R., & Misra, V. (2007). Characteristics of Ni/Gd FUSI for NMOS gate electrode applications. IEEE ELECTRON DEVICE LETTERS, 28(7), 555–557. https://doi.org/10.1109/LED.2007.897889

Chen, B., Jha, R., Lazar, H., Biswas, N., Lee, J., Lee, B., … Misra, V. (2006). Influence of oxygen diffusion through capping layers of low work function metal gate electrodes. IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230. https://doi.org/10.1109/LED.2006.871184