Biplab Sarkar

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit

JOURNAL OF APPLIED PHYSICS, 131(2).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP), 2018-January, 1–2.

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS, 110(1).

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997.

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149–150.

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50.

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41–46.

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).