Works (25)

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit

JOURNAL OF APPLIED PHYSICS, 131(2).

By: S. Mukhopadhyay*, L. Lyle*, H. Pal*, K. Das, L. Porter* & B. Sarkar

Source: Web Of Science
Added: January 31, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste ...

Sources: Web Of Science, ORCID
Added: November 6, 2021

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 article

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

By: R. Kirste, B. Sarkar, P. Reddy, Q. Guo, R. Collazo & Z. Sitar

Sources: Web Of Science, ORCID
Added: January 3, 2022

2020 journal article

Sources: Web Of Science, ORCID
Added: October 19, 2020

2018 journal article

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied Physics Letters, 112(6), 062102.

By: I. Bryan n, Z. Bryan n, S. Washiyama, P. Reddy, B. Gaddy, B. Sarkar, M. Breckenridge n, Q. Guo ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 conference paper

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

By: B. Sarkar, P. Reddy, A. Klump, R. Rounds n, M. Breckenridge, B. Haidet n, S. Mita*, R. Kirste*, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

On using the volatile mem-capacitive effect of TiO2 resistive random access memory to mimic the synaptic forgetting process

Journal of Electronic Materials, 47(2), 994–997.

By: B. Sarkar, S. Mills n, B. Lee, W. Pitts, V. Misra & P. Franzon

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

By: P. Reddy, S. Washiyama, W. Mecouch, L. Hernandez-Balderrama n, F. Kaess, M. Breckenridge n, B. Sarkar, B. Haidet ...

Sources: NC State University Libraries, ORCID
Added: December 10, 2018

2018 journal article

The influence of point defects on the thermal conductivity of AlN crystals

Journal of Applied Physics, 123(18).

By: R. Rounds n, B. Sarkar, D. Alden n, Q. Guo, A. Klump, C. Hartmann*, T. Nagashima*, R. Kirste ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2018 journal article

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Sources: NC State University Libraries, ORCID
Added: October 16, 2018

2018 journal article

Thermal conductivity of single-crystalline AIN

Applied Physics Express, 11(7).

By: R. Rounds n, B. Sarkar, A. Klump, C. Hartmann*, T. Nagashima*, R. Kirste, A. Franke n, M. Bickermann* ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Applied Physics Letters, 110(1), 011603.

By: P. Reddy, B. Sarkar, F. Kaess, M. Gerhold*, E. Kohn n, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

High free carrier concentration in p-GaN grown on AlN substrates

Applied Physics Letters, 111(3), 032109.

By: B. Sarkar, S. Mita, P. Reddy, A. Klump, F. Kaess, J. Tweedie, I. Bryan, Z. Bryan ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 conference paper

Material considerations for the development of III-nitride power devices

ECS Transactions, 80(7), 29–36.

By: B. Sarkar, P. Reddy, F. Kaess, B. Haidet n, J. Tweedie, S. Mita, R. Kirste, E. Kohn n ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 56(10), 100302.

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2017 journal article

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

By: B. Sarkar, P. Reddy, A. Klump n, F. Kaess n, R. Rounds n, R. Kirste n, S. Mita n, E. Kohn n, R. Collazo, Z. Sitar

Sources: NC State University Libraries, ORCID, Crossref
Added: August 6, 2018

2017 journal article

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

Applied Physics Express, 10(7), 071001.

By: B. Sarkar, B. Haidet, P. Reddy, R. Kirste, R. Collazo & Z. Sitar

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2016 journal article

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

Journal of Applied Physics, 119(14), 145702.

By: P. Reddy, S. Washiyama, F. Kaess, M. Breckenridge n, L. Hernandez-Balderrama n, B. Haidet, D. Alden, A. Franke ...

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 journal article

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

Semiconductor Science and Technology, 30(10).

By: B. Sarkar, B. Lee & V. Misra

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2015 conference paper

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149–150.

By: B. Sarkar, B. Lee & V. Misra

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 journal article

Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation

IEEE Electron Device Letters, 35(1), 48–50.

By: B. Sarkar, N. Ramanan, S. Jayanti, N. Spigna n, B. Lee, P. Franzon, V. Misra

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

2014 conference paper

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41–46.

By: B. Sarkar, B. Lee & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2013 conference paper

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).

By: B. Sarkar, S. Jayanti, N. Spigna n, B. Lee, V. Misra & P. Franzon

Sources: NC State University Libraries, ORCID
Added: August 6, 2018