Biplab Sarkar

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

Evidence of thermionic emission in forward biased beta-Ga2O3 Schottky diodes at Boltzmann doping limit

JOURNAL OF APPLIED PHYSICS, 131(2).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 15). JOURNAL OF MATERIALS RESEARCH, Vol. 12.

The 2020 UV emitter roadmap

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53(50).

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

APPLIED PHYSICS LETTERS, 112(6).

On Contacts to III-nitride deep-UV emitters

2018 3rd International Conference on Microwave and Photonics (ICMAP).

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

JOURNAL OF ELECTRONIC MATERIALS, 47(2), 994–997.

Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 36(6).

The influence of point defects on the thermal conductivity of AlN crystals

JOURNAL OF APPLIED PHYSICS, 123(18).

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

JOURNAL OF APPLIED PHYSICS, 124(10).

Thermal conductivity of single-crystalline AIN

APPLIED PHYSICS EXPRESS, 11(7).

(Invited) Material Considerations for the Development of III-nitride Power Devices

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, Vol. 80, pp. 29–36.

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

APPLIED PHYSICS LETTERS, 110(1).

High free carrier concentration in p-GaN grown on AlN substrates

APPLIED PHYSICS LETTERS, 111(3).

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

JAPANESE JOURNAL OF APPLIED PHYSICS, 56(10).

On Ni/Au Alloyed Contacts to Mg-Doped GaN

Journal of Electronic Materials, 47(1), 305–311.

Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment

APPLIED PHYSICS EXPRESS, 10(7).

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

JOURNAL OF APPLIED PHYSICS, 119(14).

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

Understanding the influence of E-a and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

2015 73rd Annual Device Research Conference (DRC), 149–150.

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

IEEE ELECTRON DEVICE LETTERS, 35(1), 48–50.

Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process

Nonvolatile memories 3, 64(14), 41–46.

Investigation of intermediate dielectric for dual floating gate MOSFET

2013 13th Non-Volatile Memory Technology Symposium (NVMTS).