Biplab Sarkar

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Doping and compensation in heavily Mg doped Al-rich AlGaN films. Applied Physics Letters, Vol. 2. https://doi.org/10.1063/5.0082992

Mukhopadhyay, S., Lyle, L. A. M., Pal, H., Das, K. K., Porter, L. M., & Sarkar, B. (2022, January 12). Evidence of thermionic emission in forward biased <i>β</i>-Ga2O3 Schottky diodes at Boltzmann doping limit. Journal of Applied Physics. https://doi.org/10.1063/5.0068211

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). High <i>n</i>-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. Applied Physics Letters, Vol. 118. https://doi.org/10.1063/5.0042857

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. Semiconductor Science and Technology, Vol. 11. https://doi.org/10.1088/1361-6641/ac3710

Kirste, R., Sarkar, B., Reddy, P., Guo, Q., Collazo, R., & Sitar, Z. (2021, December 14). Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength. Journal of Materials Research/Pratt's Guide to Venture Capital Sources, Vol. 12, pp. 4638–4664. https://doi.org/10.1557/s43578-021-00443-8

Amano, H., Collazo, R., Santi, C. D., Einfeldt, S., Funato, M., Glaab, J., … Zhang, Y. (2020, July 15). The 2020 UV emitter roadmap. Journal of Physics D Applied Physics, Vol. 53. https://doi.org/10.1088/1361-6463/aba64c

Bryan, I., Bryan, Z., Washiyama, S., Reddy, P., Gaddy, B., Sarkar, B., … Sitar, Z. (2018, February 5). Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD. Applied Physics Letters, Vol. 112, p. 062102. https://doi.org/10.1063/1.5011984

Sarkar, B., Reddy, P., Klump, A., Rounds, R., Breckenridge, M. R., Haidet, B. B., … Sitar, Z. (2018, February 1). On contacts to III-nitride deep-UV emitters. 2018 3rd International Conference on Microwave and Photonics (ICMAP), pp. 1–2. https://doi.org/10.1109/icmap.2018.8354575

Reddy, P., Washiyama, S., Mecouch, W., Hernandez-Balderrama, L. H., Kaess, F., Breckenridge, M. H., … Sitar, Z. (2018, November 1). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 36. https://doi.org/10.1116/1.5050501

Rounds, R., Sarkar, B., Alden, D., Guo, Q., Klump, A., Hartmann, C., … Collazo, R. (2018, May 11). The influence of point defects on the thermal conductivity of AlN crystals. Journal of Applied Physics, Vol. 123. https://doi.org/10.1063/1.5028141

Rounds, R., Sarkar, B., Sochacki, T., Bockowski, M., Imanishi, M., Mori, Y., … Sitar, Z. (2018, September 12). Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. Journal of Applied Physics, Vol. 124. https://doi.org/10.1063/1.5047531

Rounds, R., Sarkar, B., Klump, A., Hartmann, C., Nagashima, T., Kirste, R., … Collazo, R. (2018, June 11). Thermal conductivity of single-crystalline AlN. Applied Physics Express, Vol. 11. https://doi.org/10.7567/apex.11.071001

Sarkar, B., Reddy, P., Kaess, F., Haidet, B. B., Tweedie, J., Mita, S., … al. (2017, August 17). (Invited) Material Considerations for the Development of III-Nitride Power Devices. ECS Transactions, Vol. 80, pp. 29–36. https://doi.org/10.1149/08007.0029ecst

Reddy, P., Sarkar, B., Kaess, F., Gerhold, M., Kohn, E., Collazo, R., & Sitar, Z. (2017, January 2). Defect-free Ni/GaN Schottky barrier behavior with high temperature stability. Applied Physics Letters, Vol. 110, p. 011603. https://doi.org/10.1063/1.4973762

Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., … Sitar, Z. (2017, July 17). High free carrier concentration in p-GaN grown on AlN substrates. Applied Physics Letters, Vol. 111, p. 032109. https://doi.org/10.1063/1.4995239

Haidet, B. B., Sarkar, B., Reddy, P., Bryan, I., Bryan, Z., Kirste, R., … Sitar, Z. (2017, September 5). Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN. Japanese Journal of Applied Physics, Vol. 56, p. 100302. https://doi.org/10.7567/jjap.56.100302

Sarkar, B., Reddy, P., Klump, A., Kaess, F., Rounds, R., Kirste, R., … Sitar, Z. (2018). On Ni/Au Alloyed Contacts to Mg-Doped GaN. Journal of Electronic Materials, 47(1), 305–311. https://doi.org/10.1007/S11664-017-5775-3

Sarkar, B., Mills, S., Lee, B., Pitts, W. S., Misra, V., & Franzon, P. D. (2017, November 20). On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process. Journal of Electronic Materials, Vol. 47, pp. 994–997. https://doi.org/10.1007/s11664-017-5914-x

Sarkar, B., Haidet, B. B., Reddy, P., Kirste, R., Collazo, R., & Sitar, Z. (2017, June 6). Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment. Applied Physics Express, Vol. 10, p. 071001. https://doi.org/10.7567/apex.10.071001

Reddy, P., Washiyama, S., Kaess, F., Breckenridge, M. H., Hernandez-Balderrama, L. H., Haidet, B. B., … Sitar, Z. (2016, April 11). High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies. Journal of Applied Physics, Vol. 119, p. 145702. https://doi.org/10.1063/1.4945775

Sarkar, B., Lee, B., & Misra, V. (2015, August 24). Understanding the gradual reset in Pt/Al<sub>2</sub>O<sub>3</sub>/Ni RRAM for synaptic applications. Semiconductor Science and Technology, Vol. 30. https://doi.org/10.1088/0268-1242/30/10/105014

Sarkar, B., Lee, B., & Misra, V. (2015). Understanding the influence of E<inf>a</inf> and band-offset toward the conductance modulation in Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> synaptic RRAM. https://doi.org/10.1109/drc.2015.7175599

Sarkar, B., Ramanan, N., Jayanti, S., Spigna, N. D., Lee, B., Franzon, P., & Misra, V. (2014, January 1). Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation. IEEE Electron Device Letters, Vol. 35, pp. 48–50. https://doi.org/10.1109/led.2013.2289751

Sarkar, B., Lee, B., & Misra, V. (2014). Implications of lower zero-field activation energy of dielectric in Al2O3/HfO2 bi-layer dielectric RRAM forming process. Nonvolatile memories 3, 64(14), 41–46.

Sarkar, B., Jayanti, S., Spigna, N. D., Lee, B., Misra, V., & Franzon, P. (2013, August 1). Investigation of intermediate dielectric for dual floating gate MOSFET. 2013 13th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2013.6851052