Cristyan Eduardo Quinones-Garcia

High-current, high-voltage AlN p-n junction diodes enabled by compositional grading

Collazo, R., Kirste, R., Mita, S., Quiñones, C., Reddy, P., Sitar, Z., … Rathkanthiwar, S. (2026, January 1). AIP Publishing.

High-current, high-voltage AlN p–n junction diodes enabled by compositional grading

Quiñones, C. E., Reddy, P., Mita, S., Rathkanthiwar, S., Liu, C.-I., Khachariya, D., … Sitar, Z. (2026, January 12). Applied Physics Letters.

Hole transport analysis in N-polar p-GaN

Kamiyama, M., Rathkanthiwar, S., Quiñones, C. E., Mita, S., Reddy, P., Kirste, R., … Sitar, Z. (2026, February 18). Journal of Applied Physics.

Supplementary figures

Quiñones, C., Reddy, P., Mita, S., Rathkanthiwar, S., Liu, C.-I., Khachariya, D., … Sitar, Z. (2026, January 1). AIP Publishing.

On the origin of carrier loss in Mg-doped N-polar GaN

Kamiyama, M., Rathkanthiwar, S., Quiñones, C. E., Mita, S., Khachariya, D., Reddy, P., … Sitar, Z. (2025, December 15). Applied Physics Letters.

High-current, high-voltage AlN Schottky barrier diodes

Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.

The thermodynamics and kinetics of AlGaN growth

Quiñones, C. E., Kamiyama, M., Klump, A., Reddy, P., Rathkanthiwar, S., Collazo, R., & Sitar, Z. (2024, October 25). Elsevier EBooks.

Anderson transition in compositionally graded p-AlGaN

Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.

High conductivity and low activation energy in p-type AlGaN

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023, February 27). Applied Physics Letters, Vol. 122.

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.

High p-conductivity in AlGaN enabled by polarization field engineering

Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.

High electron mobility in AlN:Si by point and extended defect management

Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.