Works (8)

2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

Semiconductor Science and Technology, 28(7).

By: B. Lee, Y. Choi, C. Kirkpatrick, A. Huang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2013 journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Semiconductor Science and Technology, 28(7).

By: N. Ramanan, B. Lee, C. Kirkpatrick, R. Suri & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters, 33(9), 1240–1242.

By: C. Kirkpatrick, B. Lee, R. Suri, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 868–870).

By: B. Lee, C. Kirkpatrick, Y. Choi, X. Yang, A. Huang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2012 conference paper

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

In Physica status solidi c: current topics in solid state physics, vol 9, no 3-4 (Vol. 9, pp. 864–867).

By: C. Kirkpatrick, B. Lee, Y. Choi, A. Huang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2011 conference paper

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

In Physica status solidi c: current topics in solid state physics, vol 8, no 7-8 (Vol. 8).

By: C. Kirkpatrick, B. Lee, X. Yang & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters, 96(4).

By: R. Suri, C. Kirkpatrick, D. Lichtenwalner & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

In 2010 international electron devices meeting - technical digest.

By: B. Lee, C. Kirkpatrick, X. Yang, S. Jayanti, R. Suri, J. Roberts, V. Misra

Source: NC State University Libraries
Added: August 6, 2018