Casey Joe Kirkpatrick

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

Semiconductor Science and Technology, 28(7).

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Semiconductor Science and Technology, 28(7).

Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters, 33(9), 1240–1242.

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 868–870.

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 864–867.

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters, 96(4).

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.