2013 journal article
Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric
Semiconductor Science and Technology, 28(7).
2013 journal article
Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation
Semiconductor Science and Technology, 28(7).
2012 journal article
Atomic layer deposition of SiO2 for AlGaN/GaN MOS-HFETs
IEEE Electron Device Letters, 33(9), 1240–1242.
2012 conference paper
Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application
Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 868–870.
2012 conference paper
Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage
Physica status solidi c: current topics in solid state physics, vol 9, no 3-4, 9(3-4), 864–867.
2011 conference paper
Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics
Physica status solidi c: current topics in solid state physics, vol 8, no 7-8, 8(7-8).
2010 journal article
Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC
Applied Physics Letters, 96(4).
2010 conference paper
Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics
2010 international electron devices meeting - technical digest.