Works (8)

Updated: July 5th, 2023 15:46

2013 journal article

Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: B. Lee*, Y. Choi*, C. Kirkpatrick*, A. Huang* & V. Misra*โ€‰

Sources: Web Of Science, ORCID
Added: August 6, 2018

2013 journal article

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7).

By: N. Ramanan n, B. Lee n, C. Kirkpatrick n, R. Suri n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 journal article

Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs

IEEE ELECTRON DEVICE LETTERS, 33(9), 1240โ€“1242.

By: C. Kirkpatrick n, B. Lee n, R. Suri n, X. Yang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Atomic layer deposition (ALD); GaN; heterostructure field-effect transistor (HFET); metal-oxide-semiconductor heterojunction field-effect transistor (MOS-HFET); SiO2
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868โ€“870.

By: B. Lee n, C. Kirkpatrick n, Y. Choi n, X. Yang n, A. Huang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: enhancement mode; GaN-MOSHFET; normally-off; atomic layer deposition
Sources: Web Of Science, ORCID
Added: August 6, 2018

2012 article

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864โ€“867.

By: C. Kirkpatrick n, B. Lee n, Y. Choi n, A. Huang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: GaN; MOS-HFET; ALD; enhancement mode
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 article

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8.

By: C. Kirkpatrick n, B. Lee n, X. Yang n, V. Misra nโ€‰, C. Wetzel & A. Khan

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: GaN; HFET; MOS-HFET; ALD
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

Applied Physics Letters, 96(4).

By: R. Suri, C. Kirkpatrick, D. Lichtenwalner & V. Misra

Source: NC State University Libraries
Added: August 6, 2018

2010 conference paper

Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

2010 international electron devices meeting - technical digest.

By: B. Lee n, C. Kirkpatrick n, X. Yang n, S. Jayanti n, R. Suri n, J. Roberts, V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: NC State University Libraries, ORCID
Added: August 6, 2018