Casey Joe Kirkpatrick Lee, B., Choi, Y. H., Kirkpatrick, C., Huang, A. Q., & Misra, V. (2013). Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074016 Ramanan, N., Lee, B., Kirkpatrick, C., Suri, R., & Misra, V. (2013). Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28(7). https://doi.org/10.1088/0268-1242/28/7/074004 Kirkpatrick, C. J., Lee, B., Suri, R., Yang, X., & Misra, V. (2012). Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs. IEEE ELECTRON DEVICE LETTERS, 33(9), 1240–1242. https://doi.org/10.1109/led.2012.2203782 Lee, B., Kirkpatrick, C., Choi, Y.-hwan, Yang, X., Huang, A. Q., & Misra, V. (2012). Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 868–870. https://doi.org/10.1002/pssc.201100422 Kirkpatrick, C., Lee, B., Yang, X., Misra, V., Wetzel, C., & Khan, A. (2011). Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, Vol. 8. https://doi.org/10.1002/pssc.201001064 Kirkpatrick, C., Lee, B., Choi, Y. H., Huang, A., & Misra, V. (2012). Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, Vol. 9, pp. 864–867. https://doi.org/10.1002/pssc.201100421 Suri, R., Kirkpatrick, C. J., Lichtenwalner, D. J., & Misra, V. (2010). Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC. Applied Physics Letters, 96(4). Lee, B., Kirkpatrick, C., Yang, X. Y., Jayanti, S., Suri, R., Roberts, J., & Misra, V. (2010). Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics. 2010 international electron devices meeting - technical digest. https://doi.org/10.1109/iedm.2010.5703401