Lewis Reynolds

The Role of Carbon Content: A Comparison of the Nickel Particle Size and Magnetic Property of Nickel/Polysiloxane-Derived Silicon Oxycarbide

Yang, N., Zhang, X., Reynolds, L., Kumah, D., & Xu, C. (2023, January 24). ADVANCED ENGINEERING MATERIALS, Vol. 1.

A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy

CATALYSTS, 12(5).

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

SCIENTIFIC REPORTS, 11(1).

Dual-Responsive Microgels for Structural Repair and Recovery of Nonwoven Membranes for Liquid Filtration

ACS APPLIED POLYMER MATERIALS, 3(3), 1508–1517.

Tuning the Magnetic Properties of Two-Dimensional MXenes by Chemical Etching

MATERIALS, 14(3).

A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector

NANOTECHNOLOGY, 31(50).

Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires

SCIENTIFIC REPORTS, 10(1).

Epitaxial High-Yield Intrinsic and Te-Doped Dilute Nitride GaAsSbN Nanowire Heterostructure and Ensemble Photodetector Application

ACS APPLIED ELECTRONIC MATERIALS, 2(9), 2730–2738.

Hybrid GaAsSb/GaAs Heterostructure Core-Shell Nanowire/Graphene and Photodetector Applications

ACS APPLIED ELECTRONIC MATERIALS, 2(10), 3109–3120.

A Study of GaAs1-xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

ACS APPLIED NANO MATERIALS, 2(7), 4528–4537.

Improved performance of GaAsSb/AIGaAs nanowire ensemble Schottky barrier based photodetector via in situ annealing

NANOTECHNOLOGY, 30(3).

Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films

Applied Physics A, 125(5).

Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m

Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1-xSbx(x > 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 mu m. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33(12).

Nature of electrical conduction in MoS2 films deposited by laser physical vapor deposition

Journal of Materials Science: Materials in Electronics, 29(16), 14180–14191.

A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

SCIENTIFIC REPORTS, 7.

Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(3).

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied Physics Letters, 111(8), 082402.

Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(12).

Highly anisotropic magneto-transport and field orientation dependent oscillations in aligned carbon nanotube/epoxy composites

APPLIED PHYSICS LETTERS, 111(26).

Intrinsic gain and gain degradation modulated by excitation pulse width in a semiconducting conjugated polymer

OPTICS AND LASER TECHNOLOGY, 94, 77–85.

Effect of Growth Parameters and Substrate Surface Preparation for High-Density Vertical GaAs/GaAsSb Core-Shell Nanowires on Silicon with Photoluminescence Emission at 1.3 mu m

JOURNAL OF ELECTRONIC MATERIALS, 45(4), 2108–2114.

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires

NANOSCALE RESEARCH LETTERS, 11.

Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34(2).

Te incorporation in GaAs1-xSbx nanowires and p-i-n axial structure

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 31(12).

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30(10).

Comparison of the Stability of Functionalized GaN and GaP

CHEMPHYSCHEM, 16(8), 1687–1694.

Optimization of InGaP metamorphic buffers grown by MOVPE

Ebert, C., Pulwin, Z., Reynolds, C. L., Jr., Ramos, F. S., Li, Y., & Farrell, S. (2015, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 414, pp. 21–26.

Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

APPLIED PHYSICS LETTERS, 107(10).

Modification of Properties of Yttria Stabilized Zirconia Epitaxial Thin Films by Excimer Laser Annealing

ACS APPLIED MATERIALS & INTERFACES, 6(24), 22316–22325.

Progress in ZnO Acceptor Doping: What Is the Best Strategy?

[Review of ]. ADVANCES IN CONDENSED MATTER PHYSICS, 2014.

Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures

JOURNAL OF MATERIALS RESEARCH, 28(13), 1687–1691.

Enhancement of optical gain and amplified spontaneous emission due to waveguide geometry in the conjugated polymer poly[2-methoxy-5-(2 '-ethylhexyloxy)-p-phenylene vinylene]

APPLIED PHYSICS LETTERS, 102(7).

Intrinsic optical gain in thin films of a conjugated polymer under picosecond excitation

Applied Physics Letters, 103(3).

Morphology and chain aggregation dependence of optical gain in thermally annealed films of the conjugated polymer poly[2-methoxy-5-(2 '-ethylhexyloxy)-p-phenylene vinylene]

Journal of Applied Physics, 113(23).

Shallow acceptor complexes in p-type ZnO

APPLIED PHYSICS LETTERS, 102(15).

Controlling Morphology and Chain Aggregation in Semiconducting Conjugated Polymers: The Role of Solvent on Optical Gain in MEH-PPV

JOURNAL OF PHYSICAL CHEMISTRY B, 116(42), 12835–12841.

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

JOURNAL OF APPLIED PHYSICS, 109(12).

Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29(3).

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

Crystallographic plane dependent Fe and Si dopant incorporation and activation in InP

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 206(4), 691–696.

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

Relationship between 4H-SiC/SiO2 transition layer thickness and mobility

APPLIED PHYSICS LETTERS, 95(3).

Self-assembled three-dimensional Cu-Ge nanoweb composite

NANOTECHNOLOGY, 19(13).

Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)

JOURNAL OF CRYSTAL GROWTH, 311(1), 72–78.

Thermal stability, mechanical and electrical properties of nanocrystalline Cu3Ge

Intermetallics, 16(3), 378–383.

Tunneling entity in different injection regimes of InGaN light emitting diodes

JOURNAL OF APPLIED PHYSICS, 103(8).

Polytype stability and microstructural characterization of silicon carbide epitaxial films grown on [11(2)over bar0]- and [0001]-oriented silicon carbide substrates

Bishop, S. M., Reynolds, C. L., Jr., Liliental-Weber, Z., Uprety, Y., Zhu, J., Wang, D., … Davis, R. F. (2007, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 36, pp. 285–296.

Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures

ELECTRONICS LETTERS, 41(18), 1008–1010.

Improved contact resistance and linearity in optoelectronic devices with an intermediate quaternary layer

JOURNAL OF APPLIED PHYSICS, 96(10), 5788–5791.

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188.

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).