Chang Zeng

Works (4)

Updated: July 5th, 2023 15:56

2007 personal communication

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).

By: Y. Jin n, C. Zeng n, L. Ma n & D. Barlage n

author keywords: MOSFET; device modeling; analytical models; threshold voltage; double gate; FinFET; tri-gate; triple gate; undoped; inversion; TCAD simulation
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

By: Y. Saripalli n, L. Pei n, T. Biggerstaff n, S. Ramachandran n, G. Duscher n, M. Johnson  n, C. Zeng n, K. Dandu n, Y. Jin n, D. Barlage n

Source: Web Of Science
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

JOURNAL OF APPLIED PHYSICS, 99(12).

By: D. Wang*, M. Park*, Y. Saripalli n, M. Johnson  n, C. Zeng n, D. Barlage n, J. Long n

Source: Web Of Science
Added: August 6, 2018

2005 article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

By: Y. Saripalli n, C. Zeng n, J. Long n, D. Barlage n, M. Johnson  n & D. Braddock

author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
Source: Web Of Science
Added: August 6, 2018

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