2007 personal communication
Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs
Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts
Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.