2007 personal communication

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).

By: Y. Jin*, C. Zeng*, L. Ma* & D. Barlage*

author keywords: MOSFET; device modeling; analytical models; threshold voltage; double gate; FinFET; tri-gate; triple gate; undoped; inversion; TCAD simulation
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications


Source: Web Of Science
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride


By: D. Wang*, M. Park*, Y. Saripalli n, M. Johnson n, C. Zeng n, D. Barlage n, J. Long n

Source: Web Of Science
Added: August 6, 2018

2006 article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

By: Y. Saripalli n, C. Zeng n, J. Long n, D. Barlage n, M. Johnson n & D. Braddock

author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
Source: Web Of Science
Added: August 6, 2018

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