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2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS.
By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang, S. Pavlidis, R. Kirste ...and 5 other authors, including 3 NC State authors, P. Reddy, E. Kohn, L. Lauhon, R. Collazo & Z. Sitar
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS.
By: S. Rathkanthiwar, D. Szymanski, D. Khachariya, P. Bagheri, J. Kim, S. Mita, P. Reddy, E. Kohn ...and 4 other NC State authors, S. Pavlidis, R. Kirste, R. Collazo & Z. Sitar
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
By: M. Breckenridge, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski ...and 3 other authors, including 2 NC State authors, M. Bockowski, R. Collazo & Z. Sitar
On the Ge shallow-to-deep level transition in Al-rich AlGaN
By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...and 4 other NC State authors, S. Pavlidis, R. Kirste, R. Collazo & Z. Sitar
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis
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