Dennis Szymanski

College of Engineering

Works (7)

Updated: April 28th, 2023 05:00

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta, S. Vaidya n, D. Szymanski, D. Khachariya, M. Bockowski*, G. Kamler*, P. Reddy, Z. Sitar, R. Collazo, S. Pavlidis

author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID
Added: March 25, 2023

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang*, S. Pavlidis, R. Kirste ...

Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar, D. Szymanski, D. Khachariya, P. Bagheri, J. Kim n, S. Mita, P. Reddy, E. Kohn n ...

author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 article

Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures

Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.

By: A. Comstock, M. Biliroglu, D. Seyitliyev, A. McConnell, E. Vetter n, P. Reddy, R. Kirste, D. Szymanski ...

author keywords: spintronics; terahertz; two-dimensional electron gas; ultrawide bandgap semiconductors
Sources: Web Of Science, ORCID
Added: November 14, 2022

2021 journal article

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

APPLIED PHYSICS LETTERS, 118(2).

By: M. Breckenridge n, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski* ...

Sources: Web Of Science, ORCID
Added: January 14, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge n, P. Reddy, E. Kohn n, Z. Sitar, R. Collazo, S. Pavlidis

Sources: Web Of Science, ORCID
Added: March 24, 2021