2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.
Contributors: R. Sengupta n, S. Vaidya n, n, D. Khachariya*, M. Bockowski *, G. Kamler *, P. Reddy* , Z. Sitar n, R. Collazo n , S. Pavlidis n
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS, 131(1).
Contributors: D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, S. Pavlidis n, R. Kirste* n,
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: S. Rathkanthiwar n, n, D. Khachariya n, P. Bagheri n, J. Kim, S. Mita*, P. Reddy* , E. Kohn n
2022 article
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Comstock, A., Biliroglu, M., Seyitliyev, D., McConnell, A., Vetter, E., Reddy, P., … Sun, D. (2022, October 31). ADVANCED OPTICAL MATERIALS, Vol. 10.
Contributors: A. Comstock n, M. Biliroglu n, D. Seyitliyev n, A. McConnell n, E. Vetter n, P. Reddy* , R. Kirste*, *
2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
Contributors: M. Breckenridge n, J. Tweedie n, P. Reddy n , Y. Guan n, P. Bagheri n, n, S. Mita n, K. Sierakowski n
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
Contributors: P. Bagheri n, P. Reddy n , S. Mita n, n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n
2021 journal article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
Contributors: D. Khachariya n, n, M. Breckenridge n, P. Reddy* , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n
2021 journal article
Systematic oxygen impurity reduction in smooth N-polar GaN by chemical potential control
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
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