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2021 journal article
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
APPLIED PHYSICS LETTERS, 118(2).
By: M. Breckenridge, J. Tweedie, P. Reddy, Y. Guan, P. Bagheri, D. Szymanski, S. Mita, K. Sierakowski ...and 3 other authors, including 2 NC State authors, M. Bockowski, R. Collazo & Z. Sitar
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis
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