Dieter P Griffis

SIMS analysis of high-performance accelerator niobium

Maheshwari, P., Stevie, F. A., Myneni, G. R., Ciovati, G., Rigsbee, J. M., Dhakal, P., & Griffis, D. P. (2014, November). SURFACE AND INTERFACE ANALYSIS, Vol. 46, pp. 288–290.

SIMS analysis of zinc oxide LED structures: quantification and analysis issues

Stevie, F. A., Maheshwari, P., Pierce, J. M., Adekore, B. T., & Griffis, D. P. (2013, January). SURFACE AND INTERFACE ANALYSIS, Vol. 45, pp. 352–355.

Quantification of cesium surface contamination on silicon resulting from SIMS analysis

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(3).

Time-of-Flight-Secondary Ion Mass Spectrometry Method Development for High-Sensitivity Analysis of Acid Dyes in Nylon Fibers

ANALYTICAL CHEMISTRY, 84(22), 10085–10090.

Analysis of Interstitial Elements in Niobium with Secondary Ion Mass Spectrometry (SIMS)

INTERNATIONAL SYMPOSIUM ON THE SUPERCONDUCTING SCIENCE & TECHNOLOGY OF INGOT NIOBIUM, Vol. 1352, pp. 151-+.

Chemical and Spatial Differentiation of Syringyl and Guaiacyl Lignins in Poplar Wood via Time-of-Flight Secondary Ion Mass Spectrometry

ANALYTICAL CHEMISTRY, 83(18), 7020–7026.

Surface analysis of Nb materials for SRF cavities

SURFACE AND INTERFACE ANALYSIS, Vol. 43, pp. 151–153.

Focused Ion Beam Characterization of Bicomponent Polymer Fibers

MICROSCOPY AND MICROANALYSIS, 16(3), 282–290.

High field Q slope and the baking effect: Review of recent experimental results and new data on Nb heat treatments

PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS, 13(2).

Secondary ion mass spectrometry characterization of anomalous behavior for low dose ion implanted phosphorus in silicon

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 28(3), 511–516.

Model study of electron beam charge compensation for positive secondary ion mass spectrometry using a positive primary ion beam

Applied Surface Science, 254(9), 2708–2711.

Quantification in dynamic SIMS: Current status and future needs

APPLIED SURFACE SCIENCE, 255(4), 1364–1367.

Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25(4), 769–774.

Mass fractionation of carbon and hydrogen secondary ions upon Cs+ and O-2(+) bombardment of organic materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25(3), 480–484.

Transferable Internal Reservoir Device for Electron and Ion Beam Induced Chemistry

Microscopy and Analysis, 86, 5–6.

Back side SIMS analysis of hafnium silicate

Gu, C., Stevie, F. A., Bennett, J., Garcia, R., & GriffiS, D. P. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7179–7181.

SIMS depth profiling of deuterium labeled polymers in polymer multilayers

Harton, S. E., Stevie, F. A., Griffis, D. P., & Ade, H. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7224–7227.

SIMS quantification of matrix and impurity species in AlxGa1-xN

Gu, C. J., Stevie, F. A., Hitzman, C. J., Saripalli, Y. N., Johnson, M., & Griffis, D. P. (2006, July 30). APPLIED SURFACE SCIENCE, Vol. 252, pp. 7228–7231.

Thermal stability of lanthanum scandate dielectrics on Si(100)

APPLIED PHYSICS LETTERS, 89(24).

Circuit editing of copper and low-k dielectrics in nanotechnology devices

Mosselveld, F., Makarov, VV, Lundquist, T. R., Griffis, D. P., & Russell, P. E. (2004, June). JOURNAL OF MICROSCOPY, Vol. 214, pp. 246–251.

Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument

Pivovarov, A. L., Stevie, F. A., & Griffis, D. P. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 786–790.

O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices

Kachan, M., Hunter, J., Kouzminov, D., Pivovarov, A., Gu, J., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 684–687.

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 350–354.

Site-specific SIMS backside analysis

Gu, C., Garcia, R., Pivovarov, A., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 663–667.

Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument

Pivovarov, A., Gu, C., Stevie, F., & Griffis, D. (2004, June 15). APPLIED SURFACE SCIENCE, Vol. 231, pp. 781–785.

Chemically enhanced focused ion beam micro-machining of copper

Washington, DC: U.S. Patent and Trademark Office.

Etching characteristics of chromium thin films by an electron beam induced surface reaction

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 18(4), 199–205.

Optimization of secondary ion mass spectrometry detection limit for N in SiC

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(5), 1649–1654.

Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 507–511.

Improvements in focused ion beam micromachining of interconnect materials

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 2700–2704.

Chemically enhanced focused ion beam micromachining of copper

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 19, pp. 2539–2542.

Channeling effects during focused-ion-beam micromachining of copper

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 18, pp. 1061–1065.

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

Optimization of SIMS analysis conditions for ultra-shallow phosphorus and arsenic implants

In D. B. Williams & R. Shimizu (Eds.), Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 327–328). Bristol: Institute of Physics Publishing.

Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 509–513.

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

Chemically and geometrically enhanced focused ion beam micromachining

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2494–2498.