2012 journal article

A Compact Physical AlGaN/GaN HFET Model

IEEE TRANSACTIONS ON ELECTRON DEVICES, 60(2), 639–645.

By: D. Hou n, G. Bilbro n & R. Trew n

author keywords: AlGaN/GaN heterojunction field-effect transistor (FET) (HFET) models; HFET compact models; nitride-based HFETs
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2012 conference paper

Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design

2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).

By: R. Trew n, D. Hou n, R. Schimizzi n, A. Goswami n & G. Bilbro n

Source: NC State University Libraries
Added: August 6, 2018

2009 article

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

GALLIUM NITRIDE MATERIALS AND DEVICES IV, Vol. 7216.

By: G. Bilbro n, D. Hou n, H. Yin* & R. Trew n

author keywords: GaN; HFET; HEMT; modeling; microwave; large-signal; simulation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Spin-current shot noise in mesoscopic conductors

Journal of Applied Physics, 101(2).

By: Y. He, D. Hou & R. Han

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Time-dependent transport in low-dimensional-systems - A numerical solution using the nonequilibrium Green's functions

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 6(1), 56–62.

By: Y. He*, D. Hou n, X. Liu, R. Han* & J. Chen*

author keywords: AC transport properties of nanodevices; nonequilibrium Green's function; transient
Source: Web Of Science
Added: August 6, 2018

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