Works (21)

Updated: July 5th, 2023 15:57

2012 journal article

Origin of multiplexing capabilities of multifrequency magnetic ratchets

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics, 85(4).

By: Y. Ouyang, M. Tahir, D. Lichtenwalner & B. Yellen

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

APPLIED PHYSICS LETTERS, 98(4).

By: J. Jur n, V. Wheeler n, D. Lichtenwalner n, J. Maria n & M. Johnson n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928โ€“2935.

By: B. Lee n, D. Lichtenwalner n, S. Novak n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106โ€“3115.

By: B. Lee n, S. Novak n, D. Lichtenwalner n, X. Yang n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: Advanced gate stack; high-k dielectrics; V-T control; work-function modulation
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications

Applied Physics Letters, 98(4).

By: Z. Yang, S. Hoffmann, D. Lichtenwalner, J. Krimโ€‰ & A. Kingon

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

APPLIED PHYSICS LETTERS, 96(11).

By: R. Suri n, D. Lichtenwalner n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: annealing; atomic layer deposition; gallium arsenide; high-k dielectric thin films; III-V semiconductors; interface phenomena; surface cleaning; X-ray photoelectron spectra
Sources: Web Of Science, ORCID
Added: August 6, 2018

2010 journal article

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

APPLIED PHYSICS LETTERS, 96(9).

By: S. Jayanti n, X. Yang n, D. Lichtenwalner n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: aluminium compounds; dielectric materials; flash memories; lanthanum compounds; silicon compounds; transmission electron microscopy
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 18(2), 287โ€“295.

By: Z. Yang n, D. Lichtenwalner n, A. Morris, J. Krim nโ€‰ & A. Kingon n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Contributors: Z. Yang n, D. Lichtenwalner n, A. Morris III, J. Krim nโ€‰ & A. Kingon n

author keywords: Alloys; Au-Ni alloys; electrical contacts; microelectromechanical systems (MEMS); microswitch; radio-frequency (RF) MEMS
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 journal article

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

APPLIED PHYSICS LETTERS, 95(15).

By: D. Lichtenwalner n, V. Misra nโ€‰, S. Dharโ€‰*, S. Ryuโ€‰* & A. Agarwalโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2009 conference paper

Zn-Sn co-doping effect on crystallization and texturing characteristics of indium oxide thin films

Journal of Ceramic Processing Research, 10, S116โ€“119.

By: H. Lee, J. Lee, J. Kim, D. Lichtenwalner & A. Kingon

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

APPLIED PHYSICS LETTERS, 92(9).

By: P. Kirsch, P. Sivasubramani, J. Huang, C. Young, M. Quevedo-Lopez, H. Wen, H. Alshareef, K. Choi ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2008 journal article

High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

Applied Physics Letters, 92(11), 112912.

By: J. LeBeau*, J. Jur n, D. Lichtenwalner n, H. Craft n, J. Maria n, A. Kingon n, D. Klenov, J. Cagnon*, S. Stemmerโ€‰*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, Crossref
Added: August 6, 2018

2008 journal article

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS, 92(24).

By: R. Suri n, D. Lichtenwalner n & V. Misra nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

A new test facility for efficient evaluation of MEMS contact materials

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 17(9), 1788โ€“1795.

By: Z. Yang n, D. Lichtenwalner n, A. Morris, S. Menzel, C. Nauenheim, A. Gruverman n, J. Krim nโ€‰, A. Kingon n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Contributors: Z. Yang n, D. Lichtenwalner n, A. Morris, S. Menzel, C. Nauenheim, A. Gruverman n, J. Krim nโ€‰, A. Kingon n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2007 journal article

Analysis of interface states in LaSixOy metal-insulator-semiconductor structures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A), 6480โ€“6488.

By: N. Inoue n, D. Lichtenwalner n, J. Jur n & A. Kingon n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: high-k dielectric; MOS capacitor; lanthanum silicate; interface state; fixed charge
Source: Web Of Science
Added: August 6, 2018

2007 journal article

Flexible thin film temperature and strain sensor array utilizing a novel sensing concept

SENSORS AND ACTUATORS A-PHYSICAL, 135(2), 593โ€“597.

By: D. Lichtenwalner n, A. Hydrick n & A. Kingon n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: thin film sensor array; temperature sensor; strain gage; Pt; NiCr; polyimide
Source: Web Of Science
Added: August 6, 2018

2007 journal article

High temperature stability of lanthanum silicate dielectric on Si (001)

APPLIED PHYSICS LETTERS, 90(10).

By: J. Jur n, D. Lichtenwalner n & A. Kingon n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2006 journal article

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210โ€“F214.

By: D. Lichtenwalner*, J. Jur*, R. Jha n, N. Inoue*, B. Chen n, V. Misra nโ€‰, A. Kingon*

co-author countries: Australia ๐Ÿ‡ฆ๐Ÿ‡บ United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2006 journal article

Work function engineering using lanthanum oxide interfacial layers

APPLIED PHYSICS LETTERS, 89(23).

By: H. Alshareef, M. Quevedo-Lopez, H. Wen, R. Harris, P. Kirsch, P. Majhi, B. Lee, R. Jammy ...

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

JOURNAL OF APPLIED PHYSICS, 98(2).

By: D. Lichtenwalner n, J. Jur n, A. Kingon n, M. Agustin*, Y. Yangโ€‰*, S. Stemmerโ€‰*, L. Goncharova, T. Gustafsson*, E. Garfunkel*

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

1996 patent

Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Washington, DC: U.S. Patent and Trademark Office.

By: A. Kingon, H. Al-Shareef, O. Auciello, K. Gifford, D. Lichtenwalner & R. Dat

Source: NC State University Libraries
Added: August 6, 2018

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