Daniel J. Lichtenwalner

Origin of multiplexing capabilities of multifrequency magnetic ratchets

Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics, 85(4).

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

APPLIED PHYSICS LETTERS, 98(4).

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-k PMOS Application

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 2928–2935.

Investigation of the Origin of V-T/V-FB Modulation by La2O3 Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-k Layer, and Interface Properties

IEEE TRANSACTIONS ON ELECTRON DEVICES, 58(9), 3106–3115.

Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications

Applied Physics Letters, 98(4).

Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates

APPLIED PHYSICS LETTERS, 96(11).

Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures

APPLIED PHYSICS LETTERS, 96(9).

Comparison of Au and Au-Ni Alloys as Contact Materials for MEMS Switches

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 18(2), 287–295.

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

APPLIED PHYSICS LETTERS, 95(15).

Zn-Sn co-doping effect on crystallization and texturing characteristics of indium oxide thin films

Journal of Ceramic Processing Research, 10, S116–119.

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

APPLIED PHYSICS LETTERS, 92(9).

High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control

Applied Physics Letters, 92(11), 112912.

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

APPLIED PHYSICS LETTERS, 92(24).

A new test facility for efficient evaluation of MEMS contact materials

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 17(9), 1788–1795.

Analysis of interface states in LaSixOy metal-insulator-semiconductor structures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(10A), 6480–6488.

High temperature stability of lanthanum silicate dielectric on Si (001)

APPLIED PHYSICS LETTERS, 90(10).

Flexible thin film temperature and strain sensor array utilizing a novel sensing concept

SENSORS AND ACTUATORS A-PHYSICAL, 135(2), 593–597.

High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(9), F210–F214.

Work function engineering using lanthanum oxide interfacial layers

APPLIED PHYSICS LETTERS, 89(23).

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

JOURNAL OF APPLIED PHYSICS, 98(2).

Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Washington, DC: U.S. Patent and Trademark Office.