Daniel James Zeller

Multipactor coating for sapphire RF windows using remote plasma-assisted deposition

IEEE Transactions on Plasma Science, 43(8), 2571–2580.

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices

Surface & Coatings Technology, 242, 183–186.

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1).

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

Xxist international symposium on the jahn-teller effect 2012, 428.

Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon

Japanese Journal of Applied Physics, 52(4).

Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Microelectronic Engineering, 88(7), 1471–1474.

Remote plasma enhanced chemical deposition of non-crystalline GeO(2) on Ge and Si substrates

Journal of Nanoscience and Nanotechnology, 11(9), 7974–7981.

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Microelectronic Engineering, 88(7), 1537–1540.

Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.