Works (10)

Updated: July 5th, 2023 15:47

2015 journal article

Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition

IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580.

By: R. Ives *, D. Zeller n, G. Lucovsky n, E. Schamiloglu *, D. Marsden*, G. Collins*, K. Nichols *, R. Karimov*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: High-power RF; klystron; multipactor; RF transmission; RF windows
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices

SURFACE & COATINGS TECHNOLOGY, 242, 183–186.

By: G. Lucovsky n, D. Zeller n, C. Cheng n & Y. Zhang n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Hydrogenated amorphous Si; Photovoltaic applications; Thin film transistors; Fine grain polycrystalline Si; Medium range order
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).

By: G. Lucovsky n, J. Kim n, K. Wu  n & D. Zeller n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

2013 article

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.

By: G. Lucovsky*, D. Zeller*, J. Kim* & K. Wu

Source: Web Of Science
Added: August 6, 2018

2013 journal article

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).

By: G. Lucovsky n, G. Parsons n , D. Zeller n & J. Kim n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Sources: Web Of Science, ORCID
Added: August 6, 2018

2011 journal article

Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

By: G. Lucovsky, J. Kim, K. Wu, D. Zeller, B. Papas & J. Whitten 

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Microelectronic Engineering, 88(7), 1471–1474.

By: G. Lucovsky n, D. Zeller n & J. Whitten n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: O-vacancy; Transition metal oxides: X-ray absorption spectroscopy; Second derivative O K pre-edge spectra; Tanabe-Sugano diagrams; Negative ion states
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2011 article

Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates

Lucovsky, G., & Zeller, D. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981.

By: G. Lucovsky* & D. Zeller*

author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; Wet Chemical Cleaning; Remote Plasma-Assisted Oxide; Remote Plasma-Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy; 2nd Derivative X-Ray Absorption Spectroscopy
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Microelectronic Engineering, 88(7), 1537–1540.

By: G. Lucovsky n, D. Zeller n, K. Wu  n & J. Whitten n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Remote plasma deposition; Plasma-deposited GeO2; X-ray absorption spectroscopy; Tanabe-Sugano diagrams; Band-edge states; O-vacancy defects
Sources: Web Of Science, Crossref, ORCID
Added: August 6, 2018

2011 journal article

Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.

By: G. Lucovsky, G. Parsons , D. Zeller, K. Wu, B. Papas, J. Whitten , R. Lujan, R. Street

Source: NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of ScienceΒ© and InCitesΒ© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.