Works (10)
2015 article
Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition
Ives, R. L., Zeller, D., Lucovsky, G., Schamiloglu, E., Marsden, D., Collins, G., … Karimov, R. (2015, July 31). IEEE Transactions on Plasma Science.
2013 article
Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites
Lucovsky, G., Kim, J., Wu, K., & Zeller, D. (2013, January 1). Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.
2013 article
Process induced pre-existing defects in non-crystalline SiO2and GeO2at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites
Lucovsky, G., Zeller, D., Kim, J. W., & Wu, K. (2013, April 5). Journal of Physics Conference Series.
2013 article
Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in “amorphous-Si(H)” alloys: Photovoltaic and thin film transistor devices
Lucovsky, G., Zeller, D. J., Cheng, C., & Zhang, Y. (2013, July 1). Surface and Coatings Technology.
2013 article
Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon
Lucovsky, G., Parsons, G., Zeller, D., & Kim, J. (2013, April 1). Japanese Journal of Applied Physics, Vol. 52.
2011 journal article
Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites
Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.
2011 journal article
O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides
Microelectronic Engineering, 88(7), 1471–1474.
2011 article
Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO<SUB>2</SUB> on Ge and Si Substrates
Lucovsky, G., & Zeller, D. (2011, September 1). Journal of Nanoscience and Nanotechnology.
2011 journal article
Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2
Microelectronic Engineering, 88(7), 1537–1540.
2011 journal article
Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)
Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.