Works (10)
Updated: July 5th, 2023 15:47
2015 journal article
Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition
IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580.
author keywords: High-power RF; klystron; multipactor; RF transmission; RF windows
Source: Web Of Science
Added: August 6, 2018
2014 journal article
Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices
SURFACE & COATINGS TECHNOLOGY, 242, 183–186.
author keywords: Hydrogenated amorphous Si; Photovoltaic applications; Thin film transistors; Fine grain polycrystalline Si; Medium range order
Source: Web Of Science
Added: August 6, 2018
2013 journal article
Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).
Source: Web Of Science
Added: August 6, 2018
2013 article
Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites
XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.
iopscience.iop.org (publisher PDF)
Source: Web Of Science
Added: August 6, 2018
2013 journal article
Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon
JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2011 journal article
Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites
Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.
Source: NC State University Libraries
Added: August 6, 2018
2011 journal article
O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides
Microelectronic Engineering, 88(7), 1471–1474.
author keywords: O-vacancy; Transition metal oxides: X-ray absorption spectroscopy; Second derivative O K pre-edge spectra; Tanabe-Sugano diagrams; Negative ion states
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018
2011 article
Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates
Lucovsky, G., & Zeller, D. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981.
author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; Wet Chemical Cleaning; Remote Plasma-Assisted Oxide; Remote Plasma-Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy; 2nd Derivative X-Ray Absorption Spectroscopy
TL;DR:
Three different properties of remote plasma GeO2 films are addressed, including comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers, and differences between annealing of GeO1 films on Ge substrates, andSi substrates passivated with SiONS interfacial transition regions important for device applications.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2011 journal article
Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2
Microelectronic Engineering, 88(7), 1537–1540.
author keywords: Remote plasma deposition; Plasma-deposited GeO2; X-ray absorption spectroscopy; Tanabe-Sugano diagrams; Band-edge states; O-vacancy defects
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018
2011 journal article
Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)
Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.
Source: NC State University Libraries
Added: August 6, 2018
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