Daniel James Zeller

Works (10)

Updated: July 5th, 2023 15:47

2015 journal article

Multipactor Coating for Sapphire RF Windows Using Remote Plasma-Assisted Deposition

IEEE TRANSACTIONS ON PLASMA SCIENCE, 43(8), 2571–2580.

By: R. Ives *, D. Zeller n, G. Lucovsky n, E. Schamiloglu *, D. Marsden*, G. Collins*, K. Nichols *, R. Karimov*

author keywords: High-power RF; klystron; multipactor; RF transmission; RF windows
topics (OpenAlex): Particle accelerators and beam dynamics; Metal and Thin Film Mechanics; Plasma Diagnostics and Applications
Source: Web Of Science
Added: August 6, 2018

2014 journal article

Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices

SURFACE & COATINGS TECHNOLOGY, 242, 183–186.

By: G. Lucovsky n, D. Zeller n, C. Cheng n & Y. Zhang  n

author keywords: Hydrogenated amorphous Si; Photovoltaic applications; Thin film transistors; Fine grain polycrystalline Si; Medium range order
topics (OpenAlex): Thin-Film Transistor Technologies; Silicon Nanostructures and Photoluminescence; Silicon and Solar Cell Technologies
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 31(1).

By: G. Lucovsky n, J. Kim n, K. Wu  n & D. Zeller n

topics (OpenAlex): Glass properties and applications; Thin-Film Transistor Technologies; Luminescence Properties of Advanced Materials
Source: Web Of Science
Added: August 6, 2018

2013 article

Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites

XXIST INTERNATIONAL SYMPOSIUM ON THE JAHN-TELLER EFFECT 2012, Vol. 428.

By: G. Lucovsky n, D. Zeller n, J. Kim n & K. Wu  n

topics (OpenAlex): Phase-change materials and chalcogenides; Semiconductor materials and devices; Silicon and Solar Cell Technologies
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Spectroscopic Detection of Medium Range Order in Device Grade Hydrogenated Amorphous Silicon

JAPANESE JOURNAL OF APPLIED PHYSICS, 52(4).

By: G. Lucovsky n, G. Parsons n , D. Zeller n & J. Kim n

topics (OpenAlex): Thin-Film Transistor Technologies; Silicon and Solar Cell Technologies; Silicon Nanostructures and Photoluminescence
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2011 journal article

Non-crystalline SiO(2): processing induced pre-existing defects associated with vacated O-atom intrinsic bonding sites

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1359–1363.

By: G. Lucovsky, J. Kim, K. Wu, D. Zeller, B. Papas & J. Whitten 

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

O-vacancies in transition metal (TM) oxides: Coordination and local site symmetry of transition and negative ion states in TM2O3 and TMO2 oxides

Microelectronic Engineering, 88(7), 1471–1474.

By: G. Lucovsky n, D. Zeller n & J. Whitten n 

author keywords: O-vacancy; Transition metal oxides: X-ray absorption spectroscopy; Second derivative O K pre-edge spectra; Tanabe-Sugano diagrams; Negative ion states
topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Ferroelectric and Negative Capacitance Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

2011 article

Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates

Lucovsky, G., & Zeller, D. (2011, September). JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol. 11, pp. 7974–7981.

By: G. Lucovsky n & D. Zeller*

author keywords: Remote Plasma Enhanced Chemical Vapor Deposition; Wet Chemical Cleaning; Remote Plasma-Assisted Oxide; Remote Plasma-Assisted Nitridation; Post-Deposition Annealing; X-Ray Absorption Spectroscopy; 2nd Derivative X-Ray Absorption Spectroscopy
topics (OpenAlex): Semiconductor materials and devices; Silicon Nanostructures and Photoluminescence; Ga2O3 and related materials
TL;DR: Three different properties of remote plasma GeO2 films are addressed, including comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers, and differences between annealing of GeO1 films on Ge substrates, andSi substrates passivated with SiONS interfacial transition regions important for device applications. (via Semantic Scholar)
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2011 journal article

Remote plasma-deposited GeO2 with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO2

Microelectronic Engineering, 88(7), 1537–1540.

By: G. Lucovsky n, D. Zeller n, K. Wu  n & J. Whitten n 

author keywords: Remote plasma deposition; Plasma-deposited GeO2; X-ray absorption spectroscopy; Tanabe-Sugano diagrams; Band-edge states; O-vacancy defects
topics (OpenAlex): Semiconductor materials and devices; Silicon Nanostructures and Photoluminescence; Semiconductor materials and interfaces
Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

2011 journal article

Spectroscopic detection of medium range order in device quality hydrogenated amorphous silicon, a-Si(H)

Journal of Optoelectronics and Advanced Materials, 13(11-12), 1586–1589.

By: G. Lucovsky, G. Parsons , D. Zeller, K. Wu, B. Papas, J. Whitten , R. Lujan, R. Street

Source: NC State University Libraries
Added: August 6, 2018

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