Dolar Khachariya

College of Engineering

Works (3)

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Source: Web Of Science
Added: April 12, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS.

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Source: Web Of Science
Added: September 20, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis

Source: Web Of Science
Added: April 5, 2021