Dolar Khachariya

High-current, high-voltage AlN Schottky barrier diodes

Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1).

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).