Works (21)

Updated: January 22nd, 2024 08:12

2023 article

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: S. Stein n, D. Khachariya*, W. Mecouch*, S. Mita*, P. Reddy*, J. Tweedie n, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Schottky diodes; Annealing; Ion implantation; Schottky barriers; P-n junctions; Resistance; Gallium nitride; junction barrier Schottky (JBS) diode; Mg activation; p-n diode; power semiconductor device; Schottky contact; ultrahigh-pressure annealing (UHPA); vertical GaN
Sources: Web Of Science, ORCID
Added: January 2, 2024

2023 journal article

Anderson transition in compositionally graded p-AlGaN

JOURNAL OF APPLIED PHYSICS, 134(19).

By: S. Rathkanthiwar n, P. Reddy*, C. Quinones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, D. Khachariya*, T. Eldred n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 16, 2023

2023 article

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.

By: R. Sengupta n, S. Vaidya n, D. Szymanski n, D. Khachariya*, M. Bockowski*, G. Kamler*, P. Reddy*, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: N-polar; gallium nitride; chemomechanical polishing; MoS 2; monolayer; chemical vapor deposition
Sources: Web Of Science, ORCID
Added: March 25, 2023

2023 journal article

Demonstration of near-ideal Schottky contacts to Si-doped AlN

APPLIED PHYSICS LETTERS, 123(17).

By: C. Quinones n, D. Khachariya*, P. Bagheri n, P. Reddy*, S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: October 25, 2023

2023 journal article

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

APPLIED PHYSICS LETTERS, 122(14).

By: P. Bagheri n, C. Quinones-Garcia n, D. Khachariya*, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 6, 2023

2023 journal article

High p-conductivity in AlGaN enabled by polarization field engineering

APPLIED PHYSICS LETTERS, 122(15).

By: S. Rathkanthiwar n, P. Reddy*, B. Moody*, C. Quinones-Garcia n, P. Bagheri n, D. Khachariya*, R. Dalmau*, S. Mita* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 19, 2023

2023 journal article

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

APPLIED PHYSICS EXPRESS, 16(3).

By: S. Stein n, D. Khachariya*, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy*, K. Sierakowski*, G. Kamler* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; JBS diode; Schottky contact; ultra-high-pressure-annealing; ideality factor; ion implantation; barrier height
Sources: Web Of Science, ORCID
Added: April 17, 2023

2022 journal article

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).

By: S. Stein*, D. Khachariya* & S. Pavlidis*

author keywords: design; GaN; TCAD; ion implantation; Mg diffusion; junction field-effect transistor (JFET); Mg activation
Source: Web Of Science
Added: November 21, 2022

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS, 120(8).

By: P. Bagheri n, A. Klump n, S. Washiyama n, M. Breckenridge n, J. Kim n, Y. Guan n, D. Khachariya n, C. Quinones-Garcia n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS, 131(1).

By: D. Szymanski n, D. Khachariya n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang*, S. Pavlidis n, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: January 4, 2022

2022 journal article

High electron mobility in AlN:Si by point and extended defect management

JOURNAL OF APPLIED PHYSICS, 132(18).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 10, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.

By: P. Reddy*, W. Mecouch*, M. Breckenridge n, D. Khachariya n, P. Bagheri n, J. Kim n, Y. Guan n, S. Mita* ...

co-author countries: United States of America 🇺🇸
author keywords: AlGaN; APD; UVC
Sources: Web Of Science, ORCID
Added: March 11, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS, 15(8).

By: S. Rathkanthiwar n, D. Szymanski n, D. Khachariya n, P. Bagheri n, J. Kim n, S. Mita*, P. Reddy*, E. Kohn n ...

co-author countries: United States of America 🇺🇸
author keywords: N-polar GaN; p doping; compensation; chemical potential control
Sources: Web Of Science, ORCID
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).

By: A. Jadhav*, P. Bagheri n, A. Klump n, D. Khachariya n, S. Mita*, P. Reddy*, S. Rathkanthiwar n, R. Kirste* ...

co-author countries: India 🇮🇳 United States of America 🇺🇸
author keywords: III-nitride; Mg-doped AlGaN; ionization energy; mobility; contact resistance
Sources: Web Of Science, ORCID
Added: November 6, 2021

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS, 15(5).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).

By: D. Khachariya n, S. Mita*, P. Reddy*, S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: May 31, 2022

2022 journal article

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

APPLIED PHYSICS EXPRESS, 15(10).

By: D. Khachariya*, S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* ...

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: GaN; junction barrier Schottky diode; low ON-resistance; high breakdown voltage; Mg ion implantation; ultra-high-pressure anneal
Sources: Web Of Science, ORCID
Added: October 3, 2022

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, D. Khachariya n, S. Pavlidis n, J. Tweedie*, R. Kirste* ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 17, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS, 130(5).

By: P. Bagheri n, P. Reddy*, S. Mita*, D. Szymanski n, J. Kim n, Y. Guan n, D. Khachariya n, A. Klump n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 4, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya n, D. Szymanski n, M. Breckenridge n, P. Reddy*, E. Kohn n, Z. Sitar n, R. Collazo n, S. Pavlidis n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: March 24, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS, 119(18).

By: P. Reddy*, D. Khachariya n, W. Mecouch*, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n ...

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: November 3, 2021

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.