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2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
By: M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...and 4 other NC State authors, S. Mita, P. Reddy, R. Collazo & Z. Sitar
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS.
By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...and 4 other NC State authors, S. Pavlidis, R. Kirste, R. Collazo & Z. Sitar
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis
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