Dolar Khachariya

AlGaN based UVC LEDs on AlN with reflective contacts

Kirste, R., Loveless, J., Almeter, J., Moody, B., Reddy, P., Rathkanthiwar, S., … Sitar, Z. (2025, March 19). (Vol. 3). Vol. 3.

Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing

Hasan, M. A., Alessi, M., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., … Pavlidis, S. (2025, August 15). Applied Physics Express, Vol. 18.

High-current, high-voltage AlN Schottky barrier diodes

Quiñones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, September 30). Applied Physics Express, Vol. 17.

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE Transactions on Electron Devices, Vol. 12, pp. 1494–1501.

Anderson transition in compositionally graded p-AlGaN

Rathkanthiwar, S., Reddy, P., Quiñones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023, November 15). Journal of Applied Physics, Vol. 134.

Chemical Vapor Deposition of Monolayer MoS₂ on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics

Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS Applied Nano Materials.

Demonstration of near-ideal Schottky contacts to Si-doped AlN

Quiñones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023, October 23). Applied Physics Letters, Vol. 123.

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023, April 3). Applied Physics Letters, Vol. 122.

High p-conductivity in AlGaN enabled by polarization field engineering

Rathkanthiwar, S., Reddy, P., Moody, B., Quiñones-García, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023, April 10). Applied Physics Letters, Vol. 122.

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023, March 1). Applied Physics Express, Vol. 16.

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

Stein, S. R., Khachariya, D., & Pavlidis, S. (2022, October 24). Semiconductor Science and Technology.

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Bagheri, P., Klump, A., Washiyama, S., Breckenridge, M. H., Kim, J. H., Guan, Y., … Sitar, Z. (2022, February 21). Applied Physics Letters, Vol. 2.

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Szymanski, D., Khachariya, D., Eldred, T. B., Bagheri, P., Washiyama, S., Chang, A., … Sitar, Z. (2022, January 3). Journal of Applied Physics, Vol. 1.

High electron mobility in AlN:Si by point and extended defect management

Bagheri, P., Quiñones-Garcia, C., Khachariya, D., Rathkanthiwar, S., Reddy, P., Kirste, R., … Sitar, Z. (2022, November 9). Journal of Applied Physics, Vol. 11.

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, February 19). Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 3, p. 2100619.

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

Rathkanthiwar, S., Szymanski, D., Khachariya, D., Bagheri, P., Kim, J. H., Mita, S., … Sitar, Z. (2022, July 19). Applied Physics Express, Vol. 8.

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Pavlidis, S., Reddy, P., … Collazo, R. (2022, April 7). Applied Physics Express, Vol. 5.

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Khachariya, D., Mita, S., Reddy, P., Dangi, S., Dycus, J. H., Bagheri, P., … Pavlidis, S. (2022, April 25). Applied Physics Letters, Vol. 4.

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Khachariya, D., Stein, S., Mecouch, W., Breckenridge, M. H., Rathkanthiwar, S., Mita, S., … Sitar, Z. (2022, September 5). Applied Physics Express, Vol. 10.

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

Breckenridge, M. H., Bagheri, P., Guo, Q., Sarkar, B., Khachariya, D., Pavlidis, S., … Sitar, Z. (2021, March 15). Applied Physics Letters, Vol. 118.

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

Jadhav, A., Bagheri, P., Klump, A., Khachariya, D., Mita, S., Reddy, P., … Sarkar, B. (2021, November 5). Semiconductor Science and Technology, Vol. 11.

On the Ge shallow-to-deep level transition in Al-rich AlGaN

Bagheri, P., Reddy, P., Mita, S., Szymanski, D., Kim, J. H., Guan, Y., … Sitar, Z. (2021, August 3). Journal of Applied Physics, Vol. 8.

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

Khachariya, D., Szymanski, D., Breckenridge, M. H., Reddy, P., Kohn, E., Sitar, Z., … Pavlidis, S. (2021, March 22). Applied Physics Letters, Vol. 118.

Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN

Reddy, P., Khachariya, D., Mecouch, W., Breckenridge, M. H., Bagheri, P., Guan, Y., … Sitar, Z. (2021, November 1). Applied Physics Letters, Vol. 11.