Dolar Khachariya

College of Engineering

Works (11)

2022 journal article

Doping and compensation in heavily Mg doped Al-rich AlGaN films

APPLIED PHYSICS LETTERS.

By: P. Bagheri, A. Klump, S. Washiyama, M. Breckenridge, J. Kim, Y. Guan, D. Khachariya, C. Quinones-Garcia ...

Source: Web Of Science
Added: June 20, 2022

2022 journal article

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

JOURNAL OF APPLIED PHYSICS.

By: D. Szymanski, D. Khachariya, T. Eldred, P. Bagheri, S. Washiyama, A. Chang, S. Pavlidis, R. Kirste ...

Source: Web Of Science
Added: February 7, 2022

2022 article

Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.

By: P. Reddy, W. Mecouch, M. Breckenridge, D. Khachariya, P. Bagheri, J. Kim, Y. Guan, S. Mita ...

Source: Web Of Science
Added: March 21, 2022

2022 journal article

Low resistivity, p-type, N-Polar GaN achieved by chemical potential control

APPLIED PHYSICS EXPRESS.

By: S. Rathkanthiwar, D. Szymanski, D. Khachariya, P. Bagheri, J. Kim, S. Mita, P. Reddy, E. Kohn ...

Source: Web Of Science
Added: August 8, 2022

2022 journal article

On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters

SEMICONDUCTOR SCIENCE AND TECHNOLOGY.

By: A. Jadhav, P. Bagheri, A. Klump, D. Khachariya, S. Mita, P. Reddy, S. Rathkanthiwar, R. Kirste ...

Source: Web Of Science
Added: December 6, 2021

2022 journal article

Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices

APPLIED PHYSICS EXPRESS.

Source: Web Of Science
Added: April 25, 2022

2022 journal article

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS.

By: D. Khachariya, S. Mita, P. Reddy, S. Dangi, J. Dycus, P. Bagheri, M. Breckenridge, R. Sengupta ...

Source: Web Of Science
Added: May 31, 2022

2021 journal article

High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

APPLIED PHYSICS LETTERS, 118(11).

By: M. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J. Tweedie, R. Kirste ...

Source: Web Of Science
Added: April 12, 2021

2021 journal article

On the Ge shallow-to-deep level transition in Al-rich AlGaN

JOURNAL OF APPLIED PHYSICS.

By: P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. Kim, Y. Guan, D. Khachariya, A. Klump ...

Source: Web Of Science
Added: September 20, 2021

2021 journal article

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

APPLIED PHYSICS LETTERS, 118(12).

By: D. Khachariya, D. Szymanski, M. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, S. Pavlidis

Source: Web Of Science
Added: April 5, 2021

2021 journal article

Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN

APPLIED PHYSICS LETTERS.

By: P. Reddy, D. Khachariya, W. Mecouch, M. Breckenridge, P. Bagheri, Y. Guan, J. Kim, S. Pavlidis ...

Source: Web Of Science
Added: December 20, 2021