Dolar Khachariya
College of Engineering
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Works (8)
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS.
Source: Web Of Science
Added: February 7, 2022
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.
Source: Web Of Science
Added: March 21, 2022
2022 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY.
Source: Web Of Science
Added: December 6, 2021
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS.
Source: Web Of Science
Added: April 25, 2022
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
aip.scitation.org (publisher PDF)
Source: Web Of Science
Added: April 12, 2021
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS.
Source: Web Of Science
Added: September 20, 2021
2021 journal article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
Source: Web Of Science
Added: April 5, 2021
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS.
Source: Web Of Science
Added: December 20, 2021
