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2023 article
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
Contributors: S. Stein n, *, W. Mecouch*, S. Mita*, P. Reddy* , J. Tweedie*, K. Sierakowski *, G. Kamler *
2023 journal article
Anderson transition in compositionally graded p-AlGaN
JOURNAL OF APPLIED PHYSICS, 134(19).
Contributors: S. Rathkanthiwar n, P. Reddy* , C. Quiñones n, J. Loveless n, M. Kamiyama n, P. Bagheri n, *, T. Eldred n
2023 article
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24). ACS APPLIED NANO MATERIALS, Vol. 3.
Contributors: R. Sengupta n, S. Vaidya n, D. Szymanski n, *, M. Bockowski *, G. Kamler *, P. Reddy* , Z. Sitar n, R. Collazo n , S. Pavlidis n
2023 journal article
Demonstration of near-ideal Schottky contacts to Si-doped AlN
APPLIED PHYSICS LETTERS, 123(17).
Contributors: C. Quiñones n, *, P. Bagheri n, P. Reddy* , S. Mita*, R. Kirste*, S. Rathkanthiwar n, J. Tweedie*
2023 journal article
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
APPLIED PHYSICS LETTERS, 122(14).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , *, J. Loveless n, Y. Guan n, S. Rathkanthiwar n, P. Reddy* , R. Kirste*
2023 journal article
High p-conductivity in AlGaN enabled by polarization field engineering
APPLIED PHYSICS LETTERS, 122(15).
Contributors: S. Rathkanthiwar n, P. Reddy* , B. Moody*, C. Quiñones-García n , P. Bagheri n, *, R. Dalmau *, S. Mita*
2023 journal article
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
APPLIED PHYSICS EXPRESS, 16(3).
Contributors: S. Stein n, *, S. Mita*, M. Breckenridge n, J. Tweedie*, P. Reddy* , K. Sierakowski *, G. Kamler *
2022 journal article
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(12).
2022 journal article
Doping and compensation in heavily Mg doped Al-rich AlGaN films
APPLIED PHYSICS LETTERS, 120(8).
Contributors: P. Bagheri n, A. Klump n, S. Washiyama n, M. Hayden Breckenridge n, J. Kim n, Y. Guan n, n, C. Quiñones-García n
2022 journal article
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
JOURNAL OF APPLIED PHYSICS, 131(1).
Contributors: D. Szymanski n, n, T. Eldred n, P. Bagheri n, S. Washiyama n, A. Chang *, S. Pavlidis n, R. Kirste*
2022 journal article
High electron mobility in AlN:Si by point and extended defect management
JOURNAL OF APPLIED PHYSICS, 132(18).
Contributors: P. Bagheri n, C. Quiñones-Garcia n , n, S. Rathkanthiwar n, P. Reddy n , R. Kirste n, S. Mita n, J. Tweedie n, R. Collazo n , Z. Sitar n
2022 article
Large-Area, Solar-Blind, Sub-250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
Reddy, P., Mecouch, W., Breckenridge, M. H., Khachariya, D., Bagheri, P., Kim, J. H., … Sitar, Z. (2022, March 10). PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, Vol. 3.
Contributors: P. Reddy* , W. Mecouch*, M. Hayden Breckenridge n, n, P. Bagheri n, J. Hyun Kim n, Y. Guan n, S. Mita*
2022 journal article
Low resistivity, p-type, N-Polar GaN achieved by chemical potential control
APPLIED PHYSICS EXPRESS, 15(8).
Contributors: S. Rathkanthiwar n, D. Szymanski n, n, P. Bagheri n, J. Kim, S. Mita*, P. Reddy* , E. Kohn n
2022 journal article
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37(1).
Contributors: A. Jadhav*, P. Bagheri n, A. Klump n, n, S. Mita*, P. Reddy* , S. Rathkanthiwar n, R. Kirste*
2022 journal article
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
APPLIED PHYSICS EXPRESS, 15(5).
Contributors: S. Rathkanthiwar n, P. Bagheri n, n, S. Mita*, S. Pavlidis n, P. Reddy* , R. Kirste*, J. Tweedie*, Z. Sitar n, R. Collazo n
2022 journal article
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates. APPLIED PHYSICS LETTERS, 120(17).
Contributors: S. Mita*, P. Reddy* , S. Dangi n, J. Dycus*, P. Bagheri n, M. Breckenridge n, R. Sengupta n n,
2022 journal article
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
APPLIED PHYSICS EXPRESS, 15(10).
Contributors: S. Stein n, W. Mecouch*, M. Breckenridge n, S. Rathkanthiwar n, S. Mita*, B. Moody*, P. Reddy* *,
2021 journal article
High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
APPLIED PHYSICS LETTERS, 118(11).
Contributors: M. Breckenridge n, P. Bagheri n, Q. Guo n, B. Sarkar n, n, S. Pavlidis n, J. Tweedie*, R. Kirste*
2021 journal article
On the Ge shallow-to-deep level transition in Al-rich AlGaN
JOURNAL OF APPLIED PHYSICS, 130(5).
Contributors: P. Bagheri n, P. Reddy n , S. Mita n, D. Szymanski n, J. Kim n, Y. Guan n, n, A. Klump n
2021 journal article
On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
APPLIED PHYSICS LETTERS, 118(12).
Contributors: D. Szymanski n, M. Breckenridge n, P. Reddy* , E. Kohn n, Z. Sitar n, R. Collazo n , S. Pavlidis n n,
2021 journal article
Study on avalanche breakdown and Poole-Frenkel emission in Al-rich AlGaN grown on single crystal AlN
APPLIED PHYSICS LETTERS, 119(18).
Contributors: P. Reddy* , n, W. Mecouch *, M. Breckenridge n, P. Bagheri n, Y. Guan n, J. Kim n, S. Pavlidis n
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