Works (5)

Updated: July 5th, 2023 15:43

2015 article

Growth and Characterization of High-Quality, Relaxed In y Ga1−y N Templates for Optoelectronic Applications

Broeck, D. M. V. D., Bharrat, D., Liu, Z., El-Masry, N. A., & Bedair, S. M. (2015, August 27). Journal of Electronic Materials.

By: D. Broeck n, D. Bharrat n, Z. Liu n, N. El-Masry n & S. Bedair n

author keywords: InGaN; metal organic chemical vapor deposition (MOCVD); relaxation; semibulk
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2014 article

Strain-balanced InGaN/GaN multiple quantum wells

Broeck, D. M. V. D., Bharrat, D., Hosalli, A. M., El-Masry, N. A., & Bedair, S. M. (2014, July 21). Applied Physics Letters.

By: D. Broeck n, D. Bharrat n, A. Hosalli n, N. El-Masry n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2013 article

Gallium nitride nanowires by maskless hot phosphoric wet etching

Bharrat, D., Hosalli, A. M., Broeck, D. M. V. D., Samberg, J. P., Bedair, S. M., & El-Masry, N. A. (2013, August 19). Applied Physics Letters.

By: D. Bharrat n, A. Hosalli n, D. Broeck n, J. Samberg n, S. Bedair n & N. El-Masry n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

2013 journal article

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied Physics Letters, 103(23), 231108.

By: A. Hosalli n, D. Van Den Broeck n, D. Bharrat n, N. El-Masry n & S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Metal and Thin Film Mechanics
Sources: Web Of Science, Crossref
Added: August 6, 2018

2013 article

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Roberts, A. T., Mohanta, A., Everitt, H. O., Leach, J. H., Broeck, D. V. D., Hosalli, A. M., … Bedair, S. M. (2013, October 28). Applied Physics Letters.

By: A. Roberts*, A. Mohanta*, H. Everitt*, J. Leach*, D. Broeck n, A. Hosalli n, T. Paskova n, S. Bedair n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

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