Alan Dale Batchelor

Reassessment of the microbial role in Mn-Fe nodule genesis in Andean paleosols

Geomicrobiology Journal, 32(1), 27–41.

Molecular sentinel-on-chip for SERS-based biosensing

Wang, H.-N., Dhawan, A., Du, Y., Batchelor, D., Leonard, D. N., Misra, V., & Vo-Dinh, T. (2013, January 1). Physical Chemistry Chemical Physics, Vol. 15, pp. 6008–6015.

Reply to Boslough: Prior studies validating research are ignored

Independent evaluation of conflicting microspherule results from different investigations of the Younger Dryas impact hypothesis

Proceedings of the National Academy of Sciences of the United States of America, 109(44), E2960–2969.

Strain effects on the crystal growth and superconducting properties of epitaxial niobium ultrathin films

Crystal Growth and Design, 12(5), 2588–2593.

Hybrid Top‐Down and Bottom‐Up Fabrication Approach for Wafer‐Scale Plasmonic Nanoplatforms

Dhawan, A., Du, Y., Batchelor, D., Wang, H. N., Leonard, D., Misra, V., … Vo‐Dinh, T. (2011, February 15). Small, Vol. 7, pp. 727–731.

Focused Ion Beam Characterization of Bicomponent Polymer Fibers

Wong, K. C., Haslauer, C. M., Anantharamaiah, N., Pourdeyhimi, B., Batchelor, A. D., & Griffis, D. P. (2010, March 17). Microscopy and Microanalysis, Vol. 16, pp. 282–290.

Surface analysis of Nb materials for SRF cavities

Maheshwari, P., Tian, H., Reece, C. E., Kelley, M. J., Myneni, G. R., Stevie, F. A., … Griffis, D. P. (2010, June 1). Surface and Interface Analysis.

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0)

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reitmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, January 2). Journal of Crystal Growth.

Transferable Internal Reservoir Device for Electron and Ion Beam Induced Chemistry

Microscopy and Analysis, 86, 5–6.

Electrical characterization of InGaN quantum well p–n heterostructures

González, J. C., Silva, M. I. N., Bunker, K. L., Batchelor, A. D., & Russell, P. E. (2003, April 23). Microelectronics Journal.

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 1). Thin Solid Films, Vol. 364, pp. 98–106.

Effects of Oxygen during Selective Silicon Epitaxial Growth Using Disilane and Chlorine

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Xu, M., & Maher, D. M. (1999, June 1). Journal of The Electrochemical Society.

Effects of oxygen on selective silicon deposition using disilane

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., & Maher, D. M. (1999, March 1). Materials Letters.

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: I. Role of Implanted  BF 2

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., Xu, M., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Pendeoepitaxy of gallium nitride thin films

Linthicum, K., Gehrke, T., Thomson, D., Carlson, E., Rajagopal, P., Smith, T., … Davis, R. (1999, July 12). Applied Physics Letters.

Quality of Selective Silicon Epitaxial Films Deposited Using Disilane and Chlorine

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Xu, M., & Maher, D. M. (1999, June 1). Journal of The Electrochemical Society.

Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures

Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999, January 1). MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1.

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

Trends in residual stress for GaN/AlN/6H–SiC heterostructures

Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998, November 9). Applied Physics Letters, Vol. 73, pp. 2808–2810.

Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine

O'Neil, P. A., Öztürk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. (1997, September 1). Journal of The Electrochemical Society.

Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

Li, V. Z.-Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Öztürk, M. C., Batchelor, D., … Maher, D. M. (1997, December 8). Applied Physics Letters.