Alan Dale Batchelor

Mahaney, W. C., Krinsley, D. H., Allen, C. C. R., Ditto, J., Langworthy, K., Batchelor, A. D., … Hancock, R. G. V. (2015). Reassessment of the microbial role in Mn-Fe nodule genesis in Andean paleosols. Geomicrobiology Journal, 32(1), 27–41.

Wang, H.-N., Dhawan, A., Du, Y., Batchelor, D., Leonard, D. N., Misra, V., & Vo-Dinh, T. (2013). Molecular sentinel-on-chip for SERS-based biosensing. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 15(16), 6008–6015. https://doi.org/10.1039/c3cp00076a

LeCompte, M. A., Batchelor, D., Demitroff, M. N., Vogel, E. K., Mooney, C., Rock, B. N., & Seidel, A. W. (2013). Reply to Boslough: Prior studies validating research are ignored.

LeCompte, M. A., Goodyear, A. C., Demitroff, M. N., Batchelor, D., Vogel, E. K., Mooney, C., … Seidel, A. W. (2012). Independent evaluation of conflicting microspherule results from different investigations of the Younger Dryas impact hypothesis. Proceedings of the National Academy of Sciences of the United States of America, 109(44), E2960–2969.

Clavero, C., Beringer, D. B., Roach, W. M., Skuza, J. R., Wong, K. C., Batchelor, A. D., … Lukaszew, R. A. (2012). Strain effects on the crystal growth and superconducting properties of epitaxial niobium ultrathin films. Crystal Growth and Design, 12(5), 2588–2593.

Dhawan, A., Du, Y., Batchelor, D., Wang, H.-N., Leonard, D., Misra, V., … Vo-Dinh, T. (2011). Hybrid Top-Down and Bottom-Up Fabrication Approach for Wafer-Scale Plasmonic Nanoplatforms. SMALL, 7(6), 727–731. https://doi.org/10.1002/smll.201002186

Maheshwari, P., Tian, H., Reece, C. E., Kelley, M. J., Myneni, G. R., Stevie, F. A., … Griffis, D. P. (2011). Surface analysis of Nb materials for SRF cavities. SURFACE AND INTERFACE ANALYSIS, Vol. 43, pp. 151–153. https://doi.org/10.1002/sia.3513

Wong, K. C., Haslauer, C. M., Anantharamaiah, N., Pourdeyhimi, B., Batchelor, A. D., & Griffis, D. P. (2010). Focused Ion Beam Characterization of Bicomponent Polymer Fibers. MICROSCOPY AND MICROANALYSIS, 16(3), 282–290. https://doi.org/10.1017/s1431927610000115

Bishop, S. M., Park, J.-S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., … Davis, R. F. (2007, March 1). Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0). JOURNAL OF CRYSTAL GROWTH, Vol. 300, pp. 83–89. https://doi.org/10.1016/j.jcrysgro.2006.10.207

A.D. Garetto, R. R. G., A.D. Batchelor, C. L. P., Griffis, D. P., P.E., & Russell. (2007). Transferable Internal Reservoir Device for Electron and Ion Beam Induced Chemistry. Microscopy and Analysis, 86, 5–6.

Gonzalez, J. C., Silva, M. I. N., Bunker, K. L., Batchelor, A. D., & Russell, P. E. (2003). Electrical characterization of InGaN quantum well p-n heterostructures. MICROELECTRONICS JOURNAL, Vol. 34, pp. 455–457. https://doi.org/10.1016/S0026-2692(03)00072-7

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). Optical characterization of wide bandgap semiconductors. THIN SOLID FILMS, Vol. 364, pp. 98–106. https://doi.org/10.1016/S0040-6090(99)00903-7

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352. https://doi.org/10.1149/1.1391938

PA O'Neil, Ozturk, M. C., Batchelor, A. D., & Maher, D. M. (1999). Effects of oxygen on selective silicon deposition using disilane. MATERIALS LETTERS, 38(6), 418–422. https://doi.org/10.1016/S0167-577X(98)00200-6

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078. https://doi.org/10.1149/1.1392052

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086. https://doi.org/10.1149/1.1392053

Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., & Davis, R. F. (1999). Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., … Davis, R. (1999). Pendeo-epitaxy of gallium nitride thin films. Applied Physics Letters, 75(2), 196–198. https://doi.org/10.1063/1.124317

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Quality of selective silicon epitaxial films deposited using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343. https://doi.org/10.1149/1.1391937

Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830

Li, V. Z. Q., Mirabedini, M. R., Vogel, E., Henson, K., Batchelor, A. D., Wortman, J. J., & Kuehn, R. T. (1998). Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD. Electrochemical and Solid State Letters, 1(3), 153–155.

Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998). Trends in residual stress for GaN/AlN/6H-SiC heterostructures. APPLIED PHYSICS LETTERS, 73(19), 2808–2810. https://doi.org/10.1063/1.122597

ONeil, P. A., Ozturk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. (1997). Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315. https://doi.org/10.1149/1.1838003

Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., … Maher, D. M. (1997). Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications. Applied Physics Letters, 71(23), 3388–3390. https://doi.org/10.1063/1.120344