@misc{cuomo_williams_hanser_carlson_thomas_2004, title={MIIIN based materials and methods and apparatus for producing same}, volume={6,784,085}, number={2004 Aug. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Cuomo, J. J. and Williams, N. M. and Hanser, A. D. and Carlson, E. P. and Thomas, D. T.}, year={2004}, month={Aug} }
 @article{fujimura_thomas_streiffer_kingon_1998, title={Preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.5185}, abstractNote={ 
  Systematic studies on the preferred orientation, phase formation and the  
  electrical properties of pulsed laser deposited SrBi2Ta2O9 (SBT) have been performed.  
  At a substrate temperature of 600°C, the film on SiO2 was not crystallized. Above 650°C,  
  very strong diffraction from a non-ferroelectric, (111)-oriented fluorite phase was  
  obtained. Its crystallinity increased with increasing Bi content in the target. The fluorite  
  phase was also observed in the film on Pt deposited below 600°C, which together with  
  the pyrochlore phase resulted in the formation of an interfacial reaction product, Bi2Pt.  
  Above 650°C, the films tend to grow as the perovskite SBT phase with a c-axis  
  orientation which is not the polarization axis. In contrast, the formation of the fluorite  
  and pyrochlore phases can be suppressed on Ir electrodes. 
  }, number={9B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS}, author={Fujimura, N and Thomas, DT and Streiffer, SK and Kingon, AJ}, year={1998}, month={Sep}, pages={5185–5188} }
 @article{thomas_kingon_auciello_waser_schumacher_1997, title={Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories}, volume={14}, ISSN={["1058-4587"]}, DOI={10.1080/10584589708019976}, abstractNote={Abstract Pulsed laser ablation deposition (PLAD) was used to synthesize SrBi2Ta2O9 (SBT) layered ferroelectric thin films to integrate them into capacitors with top and bottom Pt electrodes produce by an ion beam sputter-deposition technique. SBT layers produced by laser ablation of stoichiometric and Bi-rich SBT targets exhibited marked different orientations. In addition, Pt/SBT/Pt capacitors fabricated with the distinctly oriented SBT layers exhibited substantial difference in the shape and parameters of polarization hysteresis loops, although they exhibited practically no polarization fatigue. The results presented in this paper indicate that the composition, microstructure and properties of SBT layers and SBT-based capacitors depend on the target composition and more studies are needed to understand these dependencies.}, number={1-4}, journal={INTEGRATED FERROELECTRICS}, author={Thomas, D and Kingon, AI and Auciello, O and Waser, R and Schumacher, M}, year={1997}, pages={51–57} }