Douglas William Barlage

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET’s with experimental demonstration

Park, J., Ozbek, A. M., Ma, L., Veety, M. T., Morgensen, M. P., Barlage, D. W., … Johnson, M. A. L. (2010, August 12). Solid-State Electronics.

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Grenko, J. A., Ebert, C. W., Reynolds, C. L., Duscher, G. J., Barlage, D. W., Johnson, M. A. L., … Evans, K. R. (2010, June 29). Physica Status Solidi (a).

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009, December 1). Journal of Applied Physics.

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March 1). Solid-State Electronics.

Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon

Journal of Applied Physics, 101(2).

Nitrogen acceptors in bulk ZnO (0001¯) substrates and homoepitaxial ZnO films

Adekore, B. T., Pierce, J. M., Davis, R. F., Barlage, D. W., & Muth, J. F. (2007, July 15). Journal of Applied Physics.

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Saripalli, Y. N., Pei, L., Biggerstaff, T., Ramachandran, S., Duscher, G. J., Johnson, M. A. L., … Barlage, D. W. (2007, May 14). Applied Physics Letters.

Optical spectroscopic analysis of selected area epitaxially regrown n+ gallium nitride

Wang, D., Park, M., Saripalli, Y. N., Johnson, M. A. L., Zeng, C., Barlage, D. W., & Long, J. P. (2006, June 15). Journal of Applied Physics.

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

Dandu, K., Saripalli, Y., Braddock, D., Johnson, M., & Barlage, D. W. (2005, September 26). IEEE Microwave and Wireless Components Letters.

Fabrication of wafer scale, aligned sub-25nm nanowire and nanowire templates using planar edge defined alternate layer process

Sonkusale, S. R., Amsinck, C. J., Nackashi, D. P., Spigna, N. H. D., Barlage, D., Johnson, M., & Franzon, P. D. (2005, May 11). Physica E Low-Dimensional Systems and Nanostructures, Vol. 28, pp. 107–114.

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2005, November 29). Journal of Crystal Growth.