Works (11)
Updated: July 5th, 2023 15:57
2010 journal article
An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration
SOLID-STATE ELECTRONICS, 54(12), 1680–1685.
author keywords: GaN; MOSFET; Schottky Source/Drain; Schottky barrier; Gate to Source overlap structure; Gate induced Schottky barrier lowering
Source: Web Of Science
Added: August 6, 2018
2010 journal article
Optimization of homoepitaxially grown AlGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.
author keywords: AlGaN; GaN; heterostructures; mobility; MOCVD; two-dimensional electron gas
Source: Web Of Science
Added: August 6, 2018
2009 journal article
Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 106(11).
author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018
2007 personal communication
Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs
Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).
author keywords: MOSFET; device modeling; analytical models; threshold voltage; double gate; FinFET; tri-gate; triple gate; undoped; inversion; TCAD simulation
Source: Web Of Science
Added: August 6, 2018
2007 journal article
Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon
Journal of Applied Physics, 101(2).
Source: NC State University Libraries
Added: August 6, 2018
2007 journal article
Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films
JOURNAL OF APPLIED PHYSICS, 102(2).
Source: Web Of Science
Added: August 6, 2018
2007 journal article
Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications
APPLIED PHYSICS LETTERS, 90(20).
Source: Web Of Science
Added: August 6, 2018
2006 journal article
Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride
JOURNAL OF APPLIED PHYSICS, 99(12).
Source: Web Of Science
Added: August 6, 2018
2005 journal article
Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 15(10), 664–666.
author keywords: AlGaN/GaN heterostructure field-effect transistors (HFETs); metal oxide semiconductor (MOS) capacitors; modeling
Source: Web Of Science
Added: August 6, 2018
2005 journal article
Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 28(2), 107–114.
author keywords: nanowire; nanoimprinting; mold; template; interconnects; nanotechnology
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2005 article
Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts
Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.
author keywords: ohmic contacts; MOVPE; selected area re-growth; GaN; MOSFET
Source: Web Of Science
Added: August 6, 2018
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