Douglas William Barlage

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

SOLID-STATE ELECTRONICS, 54(12), 1680–1685.

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(10), 2292–2299.

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Jin, Y., Zeng, C., Ma, L., & Barlage, D. (2007, March).

Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon

Journal of Applied Physics, 101(2).

Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films

JOURNAL OF APPLIED PHYSICS, 102(2).

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

APPLIED PHYSICS LETTERS, 90(20).

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

JOURNAL OF APPLIED PHYSICS, 99(12).

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Saripalli, Y. N., Zeng, C., Long, J. P., Barlage, D. W., Johnson, M. A. L., & Braddock, D. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 562–565.

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 15(10), 664–666.

Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 28(2), 107–114.