2010 journal article

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration

Solid-State Electronics, 54(12), 1680–1685.

By: J. Park, A. Ozbek, L. Ma, M. Veety, M. Morgensen, D. Barlage, V. Wheeler, M. Johnson

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Physica Status Solidi. A, Applications and Materials Science, 207(10), 2292–2299.

By: J. Grenko, C. Ebert, C. Reynolds, G. Duscher, D. Barlage, M. Johnson, E. Preble, T. Paskova, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Journal of Applied Physics, 106(11).

By: K. Lai, T. Paskova, V. Wheeler, J. Grenko, M. Johnson, D. Barlage, K. Udwary, E. Preble, K. Evans

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs

Solid-State Electronics, 51(3), 347–353.

By: Y. Jin, C. Zeng, L. Ma & D. Barlage

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon

Journal of Applied Physics, 101(2).

By: B. Adekore, R. Davis & D. Barlage

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films

Journal of Applied Physics, 102(2).

By: B. Adekore, J. Pierce, R. Davisb, D. Barlage & J. Muth

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications

Applied Physics Letters, 90(20).

By: Y. Saripalli, L. Pei, T. Biggerstaff, S. Ramachandran, G. Duscher, M. Johnson, C. Zeng, K. Dandu, Y. Jin, D. Barlage

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Optical spectroscopic analysis of selected area epitaxially regrown n(+) gallium nitride

Journal of Applied Physics, 99(12).

By: D. Wang, M. Park, Y. Saripalli, M. Johnson, C. Zeng, D. Barlage, J. Long

Source: NC State University Libraries
Added: August 6, 2018

2006 journal article

Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts

Journal of Crystal Growth, 287(2), 562–565.

By: Y. Saripalli, C. Zeng, J. Long, D. Barlage, M. Johnson & D. Braddock

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

IEEE Microwave and Wireless Components Letters, 15(10), 664–666.

By: K. Dandu, Y. Saripalli, D. Braddock, M. Johnson & D. Barlage

Source: NC State University Libraries
Added: August 6, 2018

2005 journal article

Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process

Physica. E, Low-Dimensional Systems & Nanostructures, 28(2), 107–114.

Source: NC State University Libraries
Added: August 6, 2018