Dejin Zhuang

Works (6)

Updated: July 5th, 2023 15:56

2010 article

Growth of AlN single crystalline boules

Herro, Z. G., Zhuang, D., Schlesser, R., & Sitar, Z. (2010, April 10). Journal of Crystal Growth.

By: Z. Herro n, D. Zhuang n, R. Schlesser n & Z. Sitar n

author keywords: Crystal morphology; Sublimation growth; Aluminum nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Source: Web Of Science
Added: August 6, 2018

2007 article

Effect of thermal environment evolution on AlN bulk sublimation crystal growth

Cai, D., Zheng, L. L., Zhang, H., Zhuang, D., Herro, Z. G., Schlesser, R., & Sitar, Z. (2007, April 25). Journal of Crystal Growth.

By: D. Cai *, L. Zheng *, H. Zhang*, D. Zhuang n, Z. Herro n, R. Schlesser n, Z. Sitar n

author keywords: computer simulation; physical vapor deposition processes; aluminum nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Silicon Carbide Semiconductor Technologies
Source: Web Of Science
Added: August 6, 2018

2007 article

Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride–silicon carbide alloy transition layer

Gu, Z., Edgar, J. H., Raghothamachar, B., Dudley, M., Zhuang, D., Sitar, Z., & Coffey, D. W. (2007, March 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.

By: Z. Gu *, J. Edgar *, B. Raghothamachar *, M. Dudley *, D. Zhuang n, Z. Sitar n, D. Coffey*

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Source: Web Of Science
Added: August 6, 2018

2006 article

Characterization of bulk grown GaN and AlN single crystal materials

Raghothamachar, B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D., Herro, Z., … Spencer, M. (2006, January 1). Journal of Crystal Growth.

By: B. Raghothamachar *, J. Bai *, M. Dudley *, R. Dalmau n, D. Zhuang n, Z. Herro n, R. Schlesser n, Z. Sitar n ...

author keywords: defects; high resolution X-ray diffraction; X-ray topography; single crystal growth; aluminum nitride; gallium nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2006 article

Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport

Zhuang, D., Herro, Z. G., Schlesser, R., Raghothamachar, B., Dudley, M., & Sitar, Z. (2006, July 1). Journal of Electronic Materials.

By: D. Zhuang n, Z. Herro n, R. Schlesser n, B. Raghothamachar *, M. Dudley * & Z. Sitar n

author keywords: III-nitrides; seeded growth; growth morphology; characterization
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

2006 article

Seeded growth of AlN single crystals by physical vapor transport

Zhuang, D., Herro, Z. G., Schlesser, R., & Sitar, Z. (2006, January 1). Journal of Crystal Growth.

By: D. Zhuang n, Z. Herro n, R. Schlesser n & Z. Sitar n

author keywords: characterization; single-crystal growth; nitrides
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; ZnO doping and properties
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Source: Web Of Science
Added: August 6, 2018

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