Emre Alptekin

Works (8)

Updated: July 5th, 2023 15:50

2010 journal article

NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

MICROELECTRONIC ENGINEERING, 87(11), 2358–2360.

By: E. Alptekin n & M. Ozturk n

author keywords: Schottky barrier height; Contact resistivity; Nickel; Platinum; Silicide; NiSi; PtSi; NixPt1-xSi; Sulfur
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si1-xCx Epitaxy from Disilane, Trimethylsilane, and Phosphine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(6), H699–H704.

By: E. Alptekin n & M. Ozturk n

UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Erbium Silicide Formation on Si1-xCx Epitaxial Layers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(5), H378–H383.

By: E. Alptekin n, M. Ozturk n, V. Misra n , Y. Cho*, Y. Kim* & S. Chopra*

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1-xGex Layers

IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(6), 1220–1227.

By: E. Alptekin n, C. Kirkpatrick n, V. Misra n  & M. Ozturk n

author keywords: Platinum germanide; platinum germanosilicide; platinum silicide; PtGe; PtSiGe; Schottky barrier height; SiGe
TL;DR: The results show that the resistance, surface morphology, and the crystalline structure of the PtSi-Ge films are independent of the strain in the original Si-1-x-x Ge-x layer, and that PtSi<sub-x</sub>Ge-x does not influence the strains in the Si-X layer. (via Semantic Scholar)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Schottky Barrier Height of Erbium Silicide on Si1-xCx

IEEE ELECTRON DEVICE LETTERS, 30(9), 949–951.

By: E. Alptekin n, M. Ozturk n & V. Misra n 

author keywords: Erbium; Schottky barrier; Si:C; Si1-xCx silicide
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2009 journal article

Schottky Barrier Height of Nickel Silicide Contacts Formed on Si1-xCx Epitaxial Layers

IEEE ELECTRON DEVICE LETTERS, 30(12), 1320–1322.

By: E. Alptekin n & M. Ozturk n

author keywords: Contact resistivity; nickel; schottky barrier; silicide; Si1-xCx
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation

IEEE ELECTRON DEVICE LETTERS, 30(12), 1272–1274.

By: E. Alptekin n & M. Ozturk n

author keywords: Contact resistivity; indium (In); nickel; Schottky barrier
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

IEEE ELECTRON DEVICE LETTERS, 30(4), 331–333.

By: E. Alptekin n, M. Ozturk n & V. Misra n 

author keywords: Contact resistance; platinum; Schottky barriers; sulfur
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.