Emre Alptekin

NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation

Alptekin, E., & Ozturk, M. C. (2010, April 29). Microelectronic Engineering.

Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si[sub 1−x]C[sub x] Epitaxy from Disilane, Trimethylsilane, and Phosphine

Alptekin, E., & Ozturk, M. C. (2010, January 1). Journal of The Electrochemical Society.

Erbium Silicide Formation on Si[sub 1−x]C[sub x] Epitaxial Layers

Alptekin, E., Ozturk, M. C., Misra, V., Cho, Y., Kim, Y., & Chopra, S. (2009, January 1). Journal of The Electrochemical Society, Vol. 156, pp. H378–383.

Platinum Germanosilicide Contacts Formed on Strained and Relaxed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Layers

Alptekin, E., Kirkpatrick, C. J., Misra, V., & Ozturk, M. C. (2009, May 19). IEEE Transactions on Electron Devices, Vol. 56, pp. 1220–1227.

Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$

Alptekin, E., Ozturk, M. C., & Misra, V. (2009, August 12). IEEE Electron Device Letters, Vol. 30, pp. 949–951.

Schottky Barrier Height of Nickel Silicide Contacts Formed on $\hbox{Si}_{1 - x}\hbox{C}_{x}$ Epitaxial Layers

Alptekin, E., & Ozturk, M. C. (2009, November 6). IEEE Electron Device Letters.

Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation

Alptekin, E., & Ozturk, M. C. (2009, November 6). IEEE Electron Device Letters.

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation

Alptekin, E., Ozturk, M. C., & Misra, V. (2009, March 12). IEEE Electron Device Letters, Vol. 30, pp. 331–333.