@article{alptekin_ozturk_2010, title={NixPt1-xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregation}, volume={87}, DOI={10.1016/j.mee.2010.04.008}, number={11}, journal={Microelectronic Engineering}, author={Alptekin, E. and Ozturk, M. C.}, year={2010}, pages={2358–2360} }
 @article{alptekin_ozturk_2010, title={Ultrahigh vacuum chemical vapor deposition of doped and intrinsic Si1-xCx epitaxy from disilane, trimethylsilane, and phosphine}, volume={157}, DOI={10.1149/1.3414167}, number={6}, journal={Journal of the Electrochemical Society}, author={Alptekin, E. and Ozturk, M. C.}, year={2010}, pages={H699–704} }
 @article{alptekin_ozturk_misra_cho_kim_chopra_2009, title={Erbium silicide formation on Si1-xCx epitaxial layers}, volume={156}, DOI={10.1149/1.3097189}, number={5}, journal={Journal of the Electrochemical Society}, author={Alptekin, E. and Ozturk, M. C. and Misra, Veena and Cho, Y. and Kim, Y. and Chopra, S.}, year={2009}, pages={H378–383} }
 @article{alptekin_kirkpatrick_misra_ozturk_2009, title={Platinum germanosilicide contacts formed on strained and relaxed Si1-xGex layers}, volume={56}, DOI={10.1109/TED.2009.2018159}, number={6}, journal={IEEE Transactions on Electron Devices}, author={Alptekin, E. and Kirkpatrick, C. J. and Misra, Veena and Ozturk, M. C.}, year={2009}, pages={1220–1227} }
 @article{alptekin_ozturk_misra_2009, title={Schottky barrier height of erbium silicide on Si1-xCx}, volume={30}, DOI={10.1109/LED.2009.2026297}, number={9}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C. and Misra, Veena}, year={2009}, pages={949–951} }
 @article{alptekin_ozturk_2009, title={Schottky barrier height of nickel silicide contacts formed on Si1-xCx epitaxial layers}, volume={30}, DOI={10.1109/LED.2009.2034114}, number={12}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C.}, year={2009}, pages={1320–1322} }
 @article{alptekin_ozturk_2009, title={Tuning of the nickel silicide schottky barrier height on P-type silicon by indium implantation}, volume={30}, DOI={10.1109/LED.2009.2033451}, number={12}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C.}, year={2009}, pages={1272–1274} }
 @article{alptekin_ozturk_misra_2009, title={Tuning of the platinum silicide schottky barrier height on n-type silicon by sulfur segregation}, volume={30}, DOI={10.1109/LED.2009.2014182}, number={4}, journal={IEEE Electron Device Letters}, author={Alptekin, E. and Ozturk, M. C. and Misra, Veena}, year={2009}, pages={331–333} }