Eric Joseph Adles

Back-reflection Second-harmonic Generation of (111)Si: Theory and Experiment

Gokce, B., Gundogdu, K., Adles, E. J., & Aspnes, D. E. (2011, May). JOURNAL OF THE KOREAN PHYSICAL SOCIETY, Vol. 58, pp. 1237–1243.

Developing an epitaxial growth process for ZnO by MOCVD using real-time spectroscopic ellipsometry

Adles, E. J. (2011, February 28). THIN SOLID FILMS, Vol. 519, pp. 2674–2677.

Measurement and Control of In-Plane Surface Chemistry During Oxidation of H-Terminated (111)Si

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol. 1399.

Chemical-etch-assisted growth of epitaxial zinc oxide

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 28, pp. 689–692.

Application of the anisotropic bond model to second-harmonic generation from amorphous media

PHYSICAL REVIEW B, 77(16).

The anisotropic bond model of nonlinear optics

Physica Status Solidi (a), 205(4), 728–731.

Method and system for conservative evaluation, validation and monitoring of thermal processing

Washington, DC: U.S. Patent and Trademark Office.

Method and system for conservative evaluation, validation and monitoring of thermal processing

Washington, DC: U.S. Patent and Trademark Office.

Relative bulk and interface contributions to optical second-harmonic generation in silicon

PHYSICAL REVIEW B, 72(20).

Method and system for conservative evaluation, validation and monitoring of thermal processing

Washington, DC: U.S. Patent and Trademark Office.