Elia James Palmese

College of Engineering

Works (6)

Updated: September 10th, 2025 05:04

2025 article

Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

Xue, H., Palmese, E., Sekely, B. J., Gray-Boneker, D., Gonzalez, A., Rogers, D. J., … Wierer, J. J., Jr. (2025, January 6). Journal of Crystal Growth, Vol. 652.

By: H. Xue n, E. Palmese n, B. Sekely n, D. Gray-Boneker n, A. Gonzalez n, D. Rogers n, B. Little n, F. Kish n, J. Muth n , J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: February 10, 2025

2025 article

Process temperature dependence of sputtered MgO/n-type GaN metal–oxide–semiconductor capacitors

Shvilberg, L., Xue, H., Palmese, E. J., Heinrich, H. H., Kuan, J., Abad, G. C., … Ihlefeld, J. F. (2025, July 22). Journal of Applied Physics, Vol. 138.

By: L. Shvilberg *, H. Xue n, E. Palmese n, H. Heinrich *, J. Kuan*, G. Abad*, N. Shukla *, S. McDonnell *, J. Wierer n , J. Ihlefeld *

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, ORCID, NC State University Libraries
Added: July 22, 2025

2024 article

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, January 11). Journal of Crystal Growth, Vol. 630.

By: H. Xue n, E. Palmese n, B. Sekely n, B. Little n, F. Kish n, J. Muth n , J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 11, 2024

2024 article

Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times

Palmese, E., Xue, H., Rogers, D. J., & Wierer, J. J. (2024, August 7). IEEE Electron Device Letters, Vol. 45, pp. 1903–1906.

By: E. Palmese n, H. Xue n, D. Rogers n & J. Wierer n 

author keywords: Enhancement-mode HEMTs; light triggered; AlInN/GaN; AlInN oxidation
topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Semiconductor Quantum Structures and Devices
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 8, 2024

2023 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE Transactions on Electron Devices, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n 

author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor Quantum Structures and Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 22, 2023

2023 article

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

Xue, H., Palmese, E., Song, R., Chowdhury, M. I., Strandwitz, N. C., & Wierer, J. J. (2023, August 17). Journal of Applied Physics, Vol. 134.

By: H. Xue n, E. Palmese n, R. Song *, M. Chowdhury *, N. Strandwitz * & J. Wierer n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: September 5, 2023

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