Elia James Palmese

College of Engineering

Works (3)

Updated: April 5th, 2024 17:52

2024 article

Growth and characterization of AlInN/GaN superlattices

Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.

By: H. Xue n, E. Palmese n, B. Sekely n, B. Little n, F. Kish n, J. Muth n, J. Wierer n

Sources: Web Of Science, ORCID
Added: January 11, 2024

2023 article

Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.

By: E. Palmese n, H. Xue n, S. Pavlidis n & J. Wierer n

author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
Sources: Web Of Science, ORCID
Added: December 22, 2023

2023 journal article

Structural and optical characterization of thin AlInN films on c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 134(7).

By: H. Xue n, E. Palmese n, R. Song*, M. Chowdhury*, N. Strandwitz* & J. Wierer Jr

Sources: Web Of Science, ORCID
Added: September 5, 2023

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