Elia James Palmese
College of Engineering
Works (4)
Updated: December 3rd, 2024 05:02
2024 article
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
Palmese, E., Xue, H., Pavlidis, S., & Wierer, J. J. (2023, December 21). IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12.
author keywords: HEMTs; Logic gates; MODFETs; Oxidation; Gallium nitride; Fabrication; Threshold voltage; AlInN; enhancement mode; gallium nitride (GaN); high-electron-mobility transistors (HEMTs); thermal oxidation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: December 22, 2023
2024 article
Growth and characterization of AlInN/GaN superlattices
Xue, H., Palmese, E., Sekely, B. J., Little, B. D., Kish, F. A., Muth, J. F., & Wierer, J. J. (2024, March 15). JOURNAL OF CRYSTAL GROWTH, Vol. 630.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: January 11, 2024
2024 journal article
Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times
IEEE ELECTRON DEVICE LETTERS, 45(10), 1903–1906.
author keywords: Enhancement-mode HEMTs; light triggered; AlInN/GaN; AlInN oxidation
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 8, 2024
2023 journal article
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
JOURNAL OF APPLIED PHYSICS, 134(7).
open access via pubs.aip.org (publisher PDF)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: September 5, 2023
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