Works (7)

Updated: May 11th, 2024 05:02

2024 article

A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25-600 V mixed-mode SiC CMOS technology

Gupta, U., Zhang, H., Liu, T., Isukapati, S., Ashik, E., Morgan, A., … Fayed, A. (2024, April 23). ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING.

By: U. Gupta, H. Zhang, T. Liu, S. Isukapati, E. Ashik*, A. Morgan, B. Lee*, W. Sung, A. Agarwal, A. Fayed

author keywords: Buck converter; Comparator; Error amplifier; Gate driver; Level shifter; Non-overlap clock generator; Power FET; Silicon carbide (SiC)
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: May 7, 2024

2024 journal article

Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs*

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 169.

By: S. Isukapati*, H. Zhang*, T. Liu*, U. Gupta*, E. Ashik n, A. Morgan*, S. Jang*, B. Lee* ...

author keywords: CMOS; 4H-SiC; Lateral MOSFET; RESURF; SMART IC; Power IC
Source: Web Of Science
Added: December 18, 2023

2022 article

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

2022 IEEE 65TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS 2022).

author keywords: Half-Bridge Power Stage; SiC Integrated Circuits; SiC Gate-Drivers
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: October 17, 2022

2022 article

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS).

By: E. Ashik n, S. Isukapati*, H. Zhang*, T. Liu*, U. Gupta*, A. Morgan*, V. Misra n, W. Sung* ...

author keywords: CMOS; reliability; field-effect mobility; threshold voltage; transconductance
UN Sustainable Development Goal Categories
Sources: Web Of Science, NC State University Libraries
Added: February 27, 2023

2022 journal article

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.

By: T. Liu*, H. Zhang*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, A. Fayed*, M. White*, A. Agarwal*

author keywords: Silicon carbide; MOSFET; Integrated circuits; Semiconductor device modeling; SPICE; Integrated circuit modeling; Silicon; SiC MOSFETs; CMOS circuits; smart power IC; SPICE modeling; trapped interface charges
Source: Web Of Science
Added: March 14, 2022

2021 article

Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 118–122.

author keywords: 4H-SiC; lateral MOSFET; RESURF; CMOS; Power IC
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: May 10, 2022

2021 article

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology

2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), pp. 966–969.

author keywords: SiC ICs; CMOS design in SiC; Power ICs; SPICE modeling
TL;DR: With the developed SPICE models, this technology enables the design of application specific integrated circuits (ASICs) in SiC, such as fully integrated high-voltage SiC power converters that can work in high temperature and radioactive environments. (via Semantic Scholar)
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: May 16, 2022

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