Emran Ashik

Works (6)

Updated: March 2nd, 2024 21:49

2024 journal article

Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs*

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 169.

By: S. Isukapati*, H. Zhang*, T. Liu*, U. Gupta*, E. Ashik n, A. Morgan*, S. Jang*, B. Lee* ...

co-author countries: United States of America 🇺🇸
author keywords: CMOS; 4H-SiC; Lateral MOSFET; RESURF; SMART IC; Power IC
Source: Web Of Science
Added: December 18, 2023

2022 article

A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

2022 IEEE 65TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS 2022).

By: H. Zhang*, T. Liu*, U. Gupta*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, A. Agarwal*, A. Fayed*

co-author countries: United States of America 🇺🇸
author keywords: Half-Bridge Power Stage; SiC Integrated Circuits; SiC Gate-Drivers
Source: Web Of Science
Added: October 17, 2022

2022 article

Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS Applications

2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS).

By: E. Ashik n, S. Isukapati*, H. Zhang*, T. Liu*, U. Gupta*, A. Morgan*, V. Misra n, W. Sung* ...

co-author countries: United States of America 🇺🇸
author keywords: CMOS; reliability; field-effect mobility; threshold voltage; transconductance
Sources: Web Of Science, ORCID
Added: February 27, 2023

2022 journal article

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 10, 129–138.

By: T. Liu*, H. Zhang*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, A. Fayed*, M. White*, A. Agarwal*

co-author countries: United States of America 🇺🇸
author keywords: Silicon carbide; MOSFET; Integrated circuits; Semiconductor device modeling; SPICE; Integrated circuit modeling; Silicon; SiC MOSFETs; CMOS circuits; smart power IC; SPICE modeling; trapped interface charges
Source: Web Of Science
Added: March 14, 2022

2021 article

Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 118–122.

By: S. Isukapati*, A. Morgan*, W. Sung*, H. Zhang*, T. Liu*, A. Fayed*, A. Agarwal*, E. Ashik n, B. Lee n

co-author countries: United States of America 🇺🇸
author keywords: 4H-SiC; lateral MOSFET; RESURF; CMOS; Power IC
Source: Web Of Science
Added: May 10, 2022

2021 article

SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology

2021 IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), pp. 966–969.

By: T. Liu*, H. Zhang*, S. Isukapati*, E. Ashik n, A. Morgan*, B. Lee n, W. Sung*, M. White*, A. Fayed*, A. Agarwal*

co-author countries: United States of America 🇺🇸
author keywords: SiC ICs; CMOS design in SiC; Power ICs; SPICE modeling
Source: Web Of Science
Added: May 16, 2022

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.